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Higher-plant leaves survival under UV along and under simulated solar UV radiation corresponding to radiation incident on Mars, Earth and Venus
Leaf-kill of blades and pine needles by simulated mars, earth, and venus solar radiation
A spatially localized energetic extreme ultra-violet (EUV) burst is imaged at the presumed position of fast magnetic reconnection in a plasma jet produced by a coaxial helicity injection source; this EUV burst indicates strong localized electron heating. A circularly polarized high frequency magnetic field perturbation is simultaneously observed at some distance from the reconnection region indicating that the reconnection emits whistler waves and that Hall dynamics likely governs the reconnection. Spectroscopic measurement also shows simultaneous fast ion heating. The electron heating is consistent with Ohmic dissipation, while the ion heating is consistent with ion trajectories becoming stochastic.
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Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.
We present early results from the Ultra-Violet Imaging Telescope (UVIT) on board the ASTROSAT observatory. We report the discovery of a hot companion associated with one of the blue straggler stars (BSSs) in the old open cluster, NGC 188. Using fluxes measured in four filters in UVIT’s far-UV (FUV) channel, and two filters in the near-UV (NUV) channel, we have constructed the spectral energy distribution (SED) of the star WOCS-5885, after combining with flux measurements from GALEX , Ultraviolet Imaging Telescope, Ultraviolet Optical Telescope, SPITZER , WISE , and several ground-based facilities. The resulting SED spans a wavelength range of 0.15 μ m to 7.8 μ m. This object is found to be one of the brightest FUV sources in the cluster. An analysis of the SED reveals the presence of two components. The cooler component is found to have a temperature of 6000 ± 150 K, confirming that it is a BSS. Assuming it to be a main-sequence star, we estimate its mass to be ∼1.1–1.2 M {sub ⊙}. The hotter component, with an estimated temperature of 17,000 ± 500 K, has a radius of ∼ 0.6 R {sub ⊙} and L ∼30 L {sub ⊙}. Bigger and more luminous than a white dwarf, yet cooler than a sub-dwarf, we speculate that it is a post-AGB/HB star that has recently transferred its mass to the BSS, which is known to be a rapid rotator. This binary system, which is the first BSS with a post-AGB/HB companion identified in an open cluster, is an ideal laboratory to study the process of BSS formation via mass transfer.
We present the second Swift Ultra-Violet/Optical Telescope (UVOT) gamma-ray burst (GRB) afterglow catalog, greatly expanding on the first Swift UVOT GRB afterglow catalog. The second catalog is constructed from a database containing over 120,000 independent UVOT observations of 538 GRBs first detected by Swift, the High Energy Transient Explorer 2 (HETE2), the INTErnational Gamma-Ray Astrophysics Laboratory (INTEGRAL), the Interplanetary Network (IPN), Fermi, and Astro-rivelatore Gamma a Immagini Leggero (AGILE). The catalog covers GRBs discovered from 2005 January 17 to 2010 December 25. Using photometric information in three UV bands, three optical bands, and a “white” or open filter, the data are optimally coadded to maximize the number of detections and normalized to one band to provide a detailed light curve. The catalog provides positional, temporal, and photometric information for each burst, as well as Swift Burst Alert Telescope and X-ray Telescope (XRT) GRB parameters. Temporal slopes are provided for each UVOT filter. The temporal slope per filter of almost half the GRBs are fit with a single power law, but one to three breaks are required in the remaining bursts. Morphological comparisons with the X-ray reveal that ∼75% of the UVOT light curves are similar to one of the four morphologies identified by Evans et al. (2009). The remaining ∼25% have a newly identified morphology. For many bursts, redshift- and extinction-corrected UV/optical spectral slopes are also provided at 2 × 10{sup 3}, 2 × 10{sup 4}, and 2 × 10{sup 5} s.
Astronomical instrumentation for measurements in the Far Ultra-Violet (FUV, 90-200 nm) typically use aluminum (Al) thin films due to their high reflectance over this wavelength range. However, the native aluminum oxide layer that forms on Al upon exposure to the atmosphere is strongly absorbing in this wavelength range, requiring that the films be protected with a dielectric that inhibits oxidation. Typically, magnesium fluoride (MgF 2 ) or lithium fluoride (LiF) coatings are used as protective layers, but each has shortcomings. For example, MgF 2 has an absorption cutoff at 115 nm reducing performance in a critical part of the FUV spectrum of observational interest. A viable option to access these lower wavelengths could be the use of the LiF overcoat as it has a lower absorption cutoff at 102.5 nm, but it is hygroscopic and thus susceptible to degradation in humid conditions. An approach to reduce the hygroscopic nature of LiF would be to implement a passivation process during the deposition of both Al+LiF coatings. Our team at GSFC has developed a new reactive Physical Vapor Deposition (rPVD) process that consists of a fluorination process with XeF 2 gas combined with our traditional PVD process. We have found that this new rPVD coating process offers a protected version of Al+LiF with a more environmentally stable and more transparent LiF layer, along with unprecedent reflectivity. The process starts with a bare optically smooth substrate that is coated with Al in an ultra-high vacuum (UHV) chamber by the conventional PVD process. Then, the bare Al mirror is immediately exposed to a reactive XeF 2 gas before and after the application of the flash PVD evaporated LiF layer. We have also been investigating the use of this rPVD coating process for potential efficiency enhancements of Si-based gratings. Since it is known that the XeF 2 vapor is a strong Si etchant, we are investigating if the native SiO 2 layer on Si is sufficient to protect the groove profile of e-beam-ruled Si gratings from degradation. We will report on the characterization of various Al+LiF witness mirror coatings (both on borosilicate and Si) performed under various deposition conditions using the XeF 2 passivation process. These tests include XPS to determine film stoichiometry and AFM/SEM to measure surface roughness and any etching on the Si substrate. We will also report on FUV reflectance and spectroscopic ellipsometry to characterize optical constants of these passivated films in the UV/Visible/NIR spectral ranges.
Astronomical instrumentation for measurements in the Far Ultra-Violet (FUV, 90-200 nm) typically use aluminum (Al) thin films due to their high reflectance over this wavelength range. However, the native aluminum oxide layer that forms on Al upon exposure to the atmosphere is strongly absorbing in this wavelength range, requiring that the films be protected with a dielectric that inhibits oxidation. Typically, magnesium fluoride (MgF 2 ) or lithium fluoride (LiF) coatings are used as protective layers, but each has shortcomings. For example, MgF 2 has an absorption cutoff at 115 nm reducing performance in a critical part of the FUV spectrum of observational interest. A viable option to access these lower wavelengths could be the use of the LiF overcoat as it has a lower absorption cutoff at 102.5 nm, but it is hygroscopic and thus susceptible to degradation in humid conditions. An approach to reduce the hygroscopic nature of LiF would be to implement a passivation process during the deposition of both Al+LiF coatings. Our team at GSFC has developed a new reactive Physical Vapor Deposition (rPVD) process that consists of a fluorination process with XeF 2 gas combined with our traditional PVD process. We have found that this new rPVD coating process offers a protected version of Al+LiF with a more environmentally stable and more transparent LiF layer, along with unprecedent reflectivity. The process starts with a bare optically smooth substrate that is coated with Al in an ultra-high vacuum (UHV) chamber by the conventional PVD process. Then, the bare Al mirror is immediately exposed to a reactive XeF 2 gas before and after the application of the flash PVD evaporated LiF layer. We have also been investigating the use of this rPVD coating process for potential efficiency enhancements of Si-based gratings. Since it is known that the XeF 2 vapor is a strong Si etchant, we are investigating if the native SiO 2 layer on Si is sufficient to protect the groove profile of e-beam-ruled Si gratings from degradation. We will report on the characterization of various Al+LiF witness mirror coatings (both on borosilicate and Si) performed under various deposition conditions using the XeF 2 passivation process. These tests include XPS to determine film stoichiometry and AFM/SEM to measure surface roughness and any etching on the Si substrate. We will also report on FUV reflectance and spectroscopic ellipsometry to characterize optical constants of these passivated films in the UV/Visible/NIR spectral ranges.
Astronomical instrumentation for measurements in the Far Ultra-Violet (FUV, 90-200 nm) typically use aluminum (Al) thin films due to their high reflectance over this wavelength range. However, the native aluminum oxide layer that forms on Al upon exposure to the atmosphere is strongly absorbing in this wavelength range, requiring that the films be protected with a dielectric that inhibits oxidation. Typically, magnesium fluoride (MgF 2 ) or lithium fluoride (LiF) coatings are used as protective layers, but each has shortcomings. For example, MgF 2 has an absorption cutoff at 115 nm reducing performance in a critical part of the FUV spectrum of observational interest. A viable option to access these lower wavelengths could be the use of the LiF overcoat as it has a lower absorption cutoff at 102.5 nm, but it is hygroscopic and thus susceptible to degradation in humid conditions. An approach to reduce the hygroscopic nature of LiF would be to implement a passivation process during the deposition of both Al+LiF coatings. Our team at GSFC has developed a new reactive Physical Vapor Deposition (rPVD) process that consists of a fluorination process with XeF 2 gas combined with our traditional PVD process. We have found that this new rPVD coating process offers a protected version of Al+LiF with a more environmentally stable and more transparent LiF layer, along with unprecedent reflectivity. The process starts with a bare optically smooth substrate that is coated with Al in an ultra-high vacuum (UHV) chamber by the conventional PVD process. Then, the bare Al mirror is immediately exposed to a reactive XeF 2 gas before and after the application of the flash PVD evaporated LiF layer. We have also been investigating the use of this rPVD coating process for potential efficiency enhancements of Si-based gratings. Since it is known that the XeF 2 vapor is a strong Si etchant, we are investigating if the native SiO 2 layer on Si is sufficient to protect the groove profile of e-beam-ruled Si gratings from degradation. We will report on the characterization of various Al+LiF witness mirror coatings (both on borosilicate and Si) performed under various deposition conditions using the XeF 2 passivation process. These tests include XPS to determine film stoichiometry and AFM/SEM to measure surface roughness and any etching on the Si substrate. We will also report on FUV reflectance and spectroscopic ellipsometry to characterize optical constants of these passivated films in the UV/Visible/NIR spectral ranges.
In this work, the mechanism of the vacuum ultra-violet (VUV) emission of plasma discharges, with high Xe partial pressure and high ion-induced secondary electrons emission protective layer, is studied by measuring the VUV light emission directly and comparing it with two-dimensional simulations. From the panel measurement, we find that the high intensity of excimer VUV mainly contributes to the high luminous efficacy of SrCaO-plasma display panels (PDP) at a low sustain voltage. The unchanged Xe excitation efficiency indicates that the electron temperature is not decreased by the high secondary electrons emission protective layer, even though the sustain voltage is much lower. From the two-dimensional simulations, we can find that the ratio of excimer VUV to resonant VUV, which is determined by the collision rate in the discharge, is only significantly affected by the Xe partial pressure, while it is independent of the sustain voltage and the secondary-electrons-emission capability of protective layer. The unchanged average electron energy at the moment when the electric field becomes maximum confirms that the improvement of the VUV production efficiency mainly is attributed to the increase in electron heating efficiency of a PDP with high ion-induced secondary electrons emission protective layer. Combining the experimental and the simulation results, we conclude about the mechanism by which the VUV production is improved for the plasma display panel with a high Xe partial pressure and a cold cathode with high ion-induced secondary electrons emission.
Porous organosilicate glass thin films, with k-value 2.0, were exposed to 147 nm vacuum ultra-violet (VUV) photons emitted in a Xenon capacitive coupled plasma discharge. Strong methyl bond depletion was observed, concomitant with a significant increase of the bulk dielectric constant. This indicates that, besides reactive radical diffusion, photons emitted during plasma processing do impede dielectric properties and therefore need to be tackled appropriately during patterning and integration. The detrimental effect of VUV irradiation can be partly suppressed by stuffing the low-k porous matrix with proper sacrificial polymers showing high VUV absorption together with good thermal and VUV stability. In addition, the choice of an appropriate hard-mask, showing high VUV absorption, can minimize VUV damage. Particular processing conditions allow to minimize the fluence of photons to the substrate and lead to negligible VUV damage. For patterned structures, in order to reduce VUV damage in the bulk and on feature sidewalls, the combination of both pore stuffing/material densification and absorbing hard-mask is recommended, and/or the use of low VUV-emitting plasma discharge.
This paper presents a covariance analysis of the performance and sensitivity of the attitude determination Extended Kalman Filter (EKF) used by the onboard computer (OBC) of the Extreme Ultra Violet Explorer (EUVE) spacecraft. The linearized dynamics and measurement equations of the error states are used in formulating the 'truth model' describing the order of the systems involved. The 'design model' used by the OBC EKF is then obtained by reducing the order of the truth model. The covariance matrix of the EKF which uses the reduced order model is not the correct covariance of the EKF estimation error. A 'true covariance analysis' has to be carried out in order to evaluate the correct accuracy of the OBC generated estimates. The results of such analysis are presented which indicate both the performance and the sensitivity of the OBC EKF.
"In preparation for the Astrophysics 2020 Decadal Survey NASA's Goddard Space Flight Center is studying a segmented aperture telescope with broad astrophysics, solar system, and exoplanet science capability called the Large Ultra-Violet Optical Infrared Surveyor (LUVOIR). This telescope design incorporates many heritage design concepts from the Hubble Space Telescope (HST), James Webb Space Telescope (JWST), and the Wide-field Infrared Survey Telescope (WFIRST). This includes similar ultraviolet instrumentation from HST, deployable segmented optics from JWST, and high-contrast coronagraph technology from WFIRST. Several optical design trades were completed to maximize the science product while maintaining reasonable packaging and fabrication constraints. Other technology developments such as freeform optics, UV enhanced coatings, coronagraph design, and ultra-stable mirrors are being studied to further improve the observatory performance.
We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.
We present experimental inferences of cross-field impurity transport coefficients for AlcatorC-Mod plasmas without edge-localized modes, leveraging a novel forward model for the entire Ca Kα spectrum, including satellite lines within the spectral range, to compare to high-resolution x-ray imaging crystal spectroscopy (XICS). These measurements are complemented by extreme ultra-violet (EUV) spectroscopy that constrains transport closer to the edge. Using new atomic data sets for both XICS and EUV analysis has enabled consideration of line ratios across both spectral ranges and has increased the accuracy of inferred transport coefficients. Inclusion of charge exchange between edge thermal neutrals and impurities is shown to be extremely important in C-Mod pedestals. Atomic D neutral densities from experimental D Lyα measurements at the midplane are compared to SOLPS-ITER simulations, finding good agreement. Bayesian inferences of impurity transport coefficients are presented for L-, EDA H-, and I-mode discharges, making use of the Aurora package for forward modeling and combining our spectroscopic constraints. Experimentally inferred diffusion profiles are found to match turbulent transport models at midradius within uncertainties, using both quasilinear gyro-fluid TGLF SAT-1 and nonlinear ion-scale gyrokinetic CGYRO simulations. Furthermore, significant discrepancies in convection are observed in some cases, suggesting difficulties in predictions of flat or hollow impurity profiles.
Warm dark matter (WDM) of order keV mass may be able to resolve the disagreement between structure formation in cold dark matter simulations and observations. The detailed properties of WDM will depend upon its energy distribution, in particular how it deviates from the thermal distribution usually assumed in WDM simulations. Here we focus on WDM production via the Ultra-Violet (UV) freeze-in mechanism, for the case of fermionic Higgs portal dark matter ψ produced via the portal interaction ψ-barψH{sup †}H/Λ. We introduce a new method to simplify the computation of the non-thermal energy distribution of dark matter from freeze-in. We show that the non-thermal energy distribution from UV freeze-in is hotter than the corresponding thermal distribution and has the form of a Bose-Einstein distribution with a non-thermal normalization. The resulting range of dark matter fermion mass consistent with observations is 5–7 keV. The reheating temperature must satisfy T{sub R}≳120 GeV in order to account for the observed dark matter density when m{sub ψ}≈5 keV, where the lower bound on T{sub R} corresponds to the limit where the fermion mass is entirely due to electroweak symmetry breaking via the portal interaction. The corresponding bound on the interaction scale is Λ≳6.0×10{sup 9} GeV.
Using conductive atomic force microscopy and Kelvin probe force microscopy, we study local electrical transport properties in aluminum-doped zinc oxide (ZnO:Al or AZO) thin films. Current mapping shows a spatial variation in conductivity which corroborates well with the local mapping of donor concentration (∼10{sup 20 }cm{sup −3}). In addition, a strong enhancement in the local current at grains is observed after exposing the film to ultra-violet (UV) light which is attributed to persistent photocurrent. Further, it is shown that UV absorption gives a smooth conduction in AZO film which in turn gives rise to an improvement in the bulk photoresponsivity of an n-AZO/p-Si heterojunction diode. This finding is in contrast to the belief that UV absorption in an AZO layer leads to an optical loss for the underneath absorbing layer of a heterojunction solar cell.