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Results for “ULTRA VIOLET”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Extreme ultra-violet burst, particle heating, and whistler wave emission in fast magnetic reconnection induced by kink-driven Rayleigh-Taylor instability

A spatially localized energetic extreme ultra-violet (EUV) burst is imaged at the presumed position of fast magnetic reconnection in a plasma jet produced by a coaxial helicity injection source; this EUV burst indicates strong localized electron heating. A circularly polarized high frequency magnetic field perturbation is simultaneously observed at some distance from the reconnection region indicating that the reconnection emits whistler waves and that Hall dynamics likely governs the reconnection. Spectroscopic measurement also shows simultaneous fast ion heating. The electron heating is consistent with Ohmic dissipation, while the ion heating is consistent with ion trajectories becoming stochastic.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

A HOT COMPANION TO A BLUE STRAGGLER IN NGC 188 AS REVEALED BY THE ULTRA-VIOLET IMAGING TELESCOPE (UVIT) ON ASTROSAT

We present early results from the Ultra-Violet Imaging Telescope (UVIT) on board the ASTROSAT observatory. We report the discovery of a hot companion associated with one of the blue straggler stars (BSSs) in the old open cluster, NGC 188. Using fluxes measured in four filters in UVIT’s far-UV (FUV) channel, and two filters in the near-UV (NUV) channel, we have constructed the spectral energy distribution (SED) of the star WOCS-5885, after combining with flux measurements from GALEX , Ultraviolet Imaging Telescope, Ultraviolet Optical Telescope, SPITZER , WISE , and several ground-based facilities. The resulting SED spans a wavelength range of 0.15 μ m to 7.8 μ m. This object is found to be one of the brightest FUV sources in the cluster. An analysis of the SED reveals the presence of two components. The cooler component is found to have a temperature of 6000 ± 150 K, confirming that it is a BSS. Assuming it to be a main-sequence star, we estimate its mass to be ∼1.1–1.2 M {sub ⊙}. The hotter component, with an estimated temperature of 17,000 ± 500 K, has a radius of ∼ 0.6 R {sub ⊙} and L ∼30 L {sub ⊙}. Bigger and more luminous than a white dwarf, yet cooler than a sub-dwarf, we speculate that it is a post-AGB/HB star that has recently transferred its mass to the BSS, which is known to be a rapid rotator. This binary system, which is the first BSS with a post-AGB/HB companion identified in an open cluster, is an ideal laboratory to study the process of BSS formation via mass transfer.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2017

A Large Catalog of Homogeneous Ultra-Violet/Optical GRB Afterglows: Temporal and Spectral Evolution

We present the second Swift Ultra-Violet/Optical Telescope (UVOT) gamma-ray burst (GRB) afterglow catalog, greatly expanding on the first Swift UVOT GRB afterglow catalog. The second catalog is constructed from a database containing over 120,000 independent UVOT observations of 538 GRBs first detected by Swift, the High Energy Transient Explorer 2 (HETE2), the INTErnational Gamma-Ray Astrophysics Laboratory (INTEGRAL), the Interplanetary Network (IPN), Fermi, and Astro-rivelatore Gamma a Immagini Leggero (AGILE). The catalog covers GRBs discovered from 2005 January 17 to 2010 December 25. Using photometric information in three UV bands, three optical bands, and a “white” or open filter, the data are optimally coadded to maximize the number of detections and normalized to one band to provide a detailed light curve. The catalog provides positional, temporal, and photometric information for each burst, as well as Swift Burst Alert Telescope and X-ray Telescope (XRT) GRB parameters. Temporal slopes are provided for each UVOT filter. The temporal slope per filter of almost half the GRBs are fit with a single power law, but one to three breaks are required in the remaining bursts. Morphological comparisons with the X-ray reveal that ∼75% of the UVOT light curves are similar to one of the four morphologies identified by Evans et al. (2009). The remaining ∼25% have a newly identified morphology. For many bursts, redshift- and extinction-corrected UV/optical spectral slopes are also provided at 2 × 10{sup 3}, 2 × 10{sup 4}, and 2 × 10{sup 5} s.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2014

Vacuum ultra-violet emission of plasma discharges with high Xe partial pressure using a cathode protective layer with high secondary electron emission

In this work, the mechanism of the vacuum ultra-violet (VUV) emission of plasma discharges, with high Xe partial pressure and high ion-induced secondary electrons emission protective layer, is studied by measuring the VUV light emission directly and comparing it with two-dimensional simulations. From the panel measurement, we find that the high intensity of excimer VUV mainly contributes to the high luminous efficacy of SrCaO-plasma display panels (PDP) at a low sustain voltage. The unchanged Xe excitation efficiency indicates that the electron temperature is not decreased by the high secondary electrons emission protective layer, even though the sustain voltage is much lower. From the two-dimensional simulations, we can find that the ratio of excimer VUV to resonant VUV, which is determined by the collision rate in the discharge, is only significantly affected by the Xe partial pressure, while it is independent of the sustain voltage and the secondary-electrons-emission capability of protective layer. The unchanged average electron energy at the moment when the electric field becomes maximum confirms that the improvement of the VUV production efficiency mainly is attributed to the increase in electron heating efficiency of a PDP with high ion-induced secondary electrons emission protective layer. Combining the experimental and the simulation results, we conclude about the mechanism by which the VUV production is improved for the plasma display panel with a high Xe partial pressure and a cold cathode with high ion-induced secondary electrons emission.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Vacuum ultra-violet damage and damage mitigation for plasma processing of highly porous organosilicate glass dielectrics

Porous organosilicate glass thin films, with k-value 2.0, were exposed to 147 nm vacuum ultra-violet (VUV) photons emitted in a Xenon capacitive coupled plasma discharge. Strong methyl bond depletion was observed, concomitant with a significant increase of the bulk dielectric constant. This indicates that, besides reactive radical diffusion, photons emitted during plasma processing do impede dielectric properties and therefore need to be tackled appropriately during patterning and integration. The detrimental effect of VUV irradiation can be partly suppressed by stuffing the low-k porous matrix with proper sacrificial polymers showing high VUV absorption together with good thermal and VUV stability. In addition, the choice of an appropriate hard-mask, showing high VUV absorption, can minimize VUV damage. Particular processing conditions allow to minimize the fluence of photons to the substrate and lead to negligible VUV damage. For patterned structures, in order to reduce VUV damage in the bulk and on feature sidewalls, the combination of both pore stuffing/material densification and absorbing hard-mask is recommended, and/or the use of low VUV-emitting plasma discharge.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Experimental inference of neutral and impurity transport in Alcator C-Mod using high-resolution x-ray and ultra-violet spectra

We present experimental inferences of cross-field impurity transport coefficients for AlcatorC-Mod plasmas without edge-localized modes, leveraging a novel forward model for the entire Ca Kα spectrum, including satellite lines within the spectral range, to compare to high-resolution x-ray imaging crystal spectroscopy (XICS). These measurements are complemented by extreme ultra-violet (EUV) spectroscopy that constrains transport closer to the edge. Using new atomic data sets for both XICS and EUV analysis has enabled consideration of line ratios across both spectral ranges and has increased the accuracy of inferred transport coefficients. Inclusion of charge exchange between edge thermal neutrals and impurities is shown to be extremely important in C-Mod pedestals. Atomic D neutral densities from experimental D Lyα measurements at the midplane are compared to SOLPS-ITER simulations, finding good agreement. Bayesian inferences of impurity transport coefficients are presented for L-, EDA H-, and I-mode discharges, making use of the Aurora package for forward modeling and combining our spectroscopic constraints. Experimentally inferred diffusion profiles are found to match turbulent transport models at midradius within uncertainties, using both quasilinear gyro-fluid TGLF SAT-1 and nonlinear ion-scale gyrokinetic CGYRO simulations. Furthermore, significant discrepancies in convection are observed in some cases, suggesting difficulties in predictions of flat or hollow impurity profiles.

neutrals↗
DOE OSTI2016

Warm dark matter via ultra-violet freeze-in: reheating temperature and non-thermal distribution for fermionic Higgs portal dark matter

Warm dark matter (WDM) of order keV mass may be able to resolve the disagreement between structure formation in cold dark matter simulations and observations. The detailed properties of WDM will depend upon its energy distribution, in particular how it deviates from the thermal distribution usually assumed in WDM simulations. Here we focus on WDM production via the Ultra-Violet (UV) freeze-in mechanism, for the case of fermionic Higgs portal dark matter ψ produced via the portal interaction ψ-barψH{sup †}H/Λ. We introduce a new method to simplify the computation of the non-thermal energy distribution of dark matter from freeze-in. We show that the non-thermal energy distribution from UV freeze-in is hotter than the corresponding thermal distribution and has the form of a Bose-Einstein distribution with a non-thermal normalization. The resulting range of dark matter fermion mass consistent with observations is 5–7 keV. The reheating temperature must satisfy T{sub R}≳120 GeV in order to account for the observed dark matter density when m{sub ψ}≈5 keV, where the lower bound on T{sub R} corresponds to the limit where the fermion mass is entirely due to electroweak symmetry breaking via the portal interaction. The corresponding bound on the interaction scale is Λ≳6.0×10{sup 9} GeV.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Ultra-violet absorption induced modifications in bulk and nanoscale electrical transport properties of Al-doped ZnO thin films

Using conductive atomic force microscopy and Kelvin probe force microscopy, we study local electrical transport properties in aluminum-doped zinc oxide (ZnO:Al or AZO) thin films. Current mapping shows a spatial variation in conductivity which corroborates well with the local mapping of donor concentration (∼10{sup 20 }cm{sup −3}). In addition, a strong enhancement in the local current at grains is observed after exposing the film to ultra-violet (UV) light which is attributed to persistent photocurrent. Further, it is shown that UV absorption gives a smooth conduction in AZO film which in turn gives rise to an improvement in the bulk photoresponsivity of an n-AZO/p-Si heterojunction diode. This finding is in contrast to the belief that UV absorption in an AZO layer leads to an optical loss for the underneath absorbing layer of a heterojunction solar cell.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Ablation of (GeS{sub 2}){sub 0.3}(Sb{sub 2}S{sub 3}){sub 0.7} glass with an ultra-violet nano-second laser

Highlights: • The interaction of (GeS{sub 2}){sub 0.3}(Sb{sub 2}S{sub 3}){sub 0.7} bulk glass and film with UV nanosecond laser. • Ablation process, topography of crater and structure of the material were studied. • Ablation threshold fluencies changed with the spot diameter and number of pulses. • The photo-thermal expansion of the material occurred for low laser fluency. • Laser direct writing process applicable for fabrication of passive optical elements. - Abstract: The results of an experimental study of the laser ablation of bulk and thin films of a GeSbS chalcogenide glass using UV nanosecond pulses are reported. The response of the samples to illumination conditions was studied through the use of atomic force spectroscopy, digital holographic microscopy, Raman scattering and scanning electron microscopy. The multi-pulse ablation thresholds were determined for both the bulk and thin film samples for varying number of pulses and illuminated spot diameter. The possible application of direct laser writing into the bulk and thin films of this material is presented.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Simultaneous observations of the blazar PKS 2155-304 from ultra-violet to TeV energies

Here we report the results of the first ever contemporaneous multi-wavelength observation campaign on the BL Lac object PKS 2155−304 involving Swift , NuSTAR , Fermi -LAT, and H.E.S.S. The use of these instruments allows us to cover a broad energy range, which is important for disentangling the different radiative mechanisms. The source, observed from June 2013 to October 2013, was found in a low flux state with respect to previous observations but exhibited highly significant flux variability in the X-rays. The high-energy end of the synchrotron spectrum can be traced up to 40 keV without significant contamination by high-energy emission. A one-zone synchrotron self-Compton model was used to reproduce the broadband flux of the source for all the observations presented here but failed for previous observations made in April 2013. A lepto-hadronic solution was then explored to explain these earlier observational results.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2014

An ultrashort pulse ultra-violet radiation undulator source driven by a laser plasma wakefield accelerator

Narrow band undulator radiation tuneable over the wavelength range of 150–260 nm has been produced by short electron bunches from a 2 mm long laser plasma wakefield accelerator based on a 20 TW femtosecond laser system. The number of photons measured is up to 9 × 10{sup 6} per shot for a 100 period undulator, with a mean peak brilliance of 1 × 10{sup 18} photons/s/mrad{sup 2}/mm{sup 2}/0.1% bandwidth. Simulations estimate that the driving electron bunch r.m.s. duration is as short as 3 fs when the electron beam has energy of 120–130 MeV with the radiation pulse duration in the range of 50–100 fs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Luminescent properties of Eu{sup 2+}-doped BaGdF{sub 5} glass ceramics a potential blue phosphor for ultra-violet light-emitting diode

Eu{sup 2+} doped transparent oxyfluoride glass ceramics containing BaGdF{sub 5} nanocrystals were successfully fabricated by melt-quenching technique under a reductive atmosphere. The structure of the glass and glass ceramics were investigated by differential scanning calorimetry, X-ray diffraction (XRD), and transmission electron microscopy (TEM). The luminescent properties were investigated by transmission, excitation, and emission spectra. The decay time of the Gd{sup 3+} ions at 312 nm excited with 275 nm were also investigated. The results of XRD and TEM indicated the existence of BaGdF5 nanocrystals in the transparent glass ceramics. The excitation spectra of Eu{sup 2+} doped glass ceramics showed an excellent overlap with the main emission region of an ultraviolet light-emitting diode (UV-LED). Compared with the as-made glass, the emission of glass ceramics is much stronger by a factor of increasing energy transfer efficiency from Gd{sup 3+} to Eu{sup 2+} ions, the energy transfer efficiency from Gd{sup 3+} to Eu{sup 2+} ions was discussed. In addition, the chromaticity coordinates of glass and glass ceramics specimens were also discussed, which indicated that the Eu{sup 2+} doped BaGdF{sub 5} glass ceramics may be used as a potential blue-emitting phosphor for UV-LED.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN

We studied energy transfer from AlN to doped Gd{sup 3+} ions as a function of the post-thermal annealing temperature. Gd-doped AlN thin films were deposited on fused-silica substrates using a reactive radio-frequency magnetron sputtering technique. The film is a c-axis oriented polycrystal. The intra-orbital electron transition in Gd{sup 3+} showed an atomically sharp luminescence at 3.9 eV (318 nm). The photoluminescence (PL) excitation spectrum exhibited a resonant peak, indicating efficient energy transfer from the host AlN crystal to Gd{sup 3+} ions. The PL intensity increases approximately ten times by thermal annealing. The PL decay lifetime becomes long with annealing, and mid-gap luminescence relating to the crystal defects in AlN was also found to be reduced by annealing. These results suggest that energy dissipation of excited carriers in AlN was suppressed by annealing, and the efficiency of energy transfer into Gd{sup 3+} was improved.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗