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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Chemical Thinning Process for Fabricating UV-Imaging CCDs

The thinning stage of the postfabrication process reported in the immediately preceding article is notable in its own right. Although the thinning process was described in the preceding article as part of an overall process of fabrication of a supported charge-coupled device (CCD), it is more generally applicable to both free-standing and supported devices that have been fabricated in die and wafer formats. Like the thermocompression bonding process described in the preceding article, the thinning process is compatible with CCD-fabrication processes, as well as postfabrication processes that enhance the response of CCDs to ultraviolet (UV) light, including the delta-doping process. CCDs that are thinned by this process and then delta-doped exhibit high quantum efficiencies that are stable with time and with exposure to the environment.

Jones, TOdd↗
NASA NTRS2004

Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs

An improved process that includes a high-temperature bonding subprocess has been developed to enable the fabrication of robust, flat, silicon-based charge-coupled devices (CCDs) for imaging in ultraviolet (UV) light and/or for detecting low-energy charged particles. The CCDs in question are devices on which CCD circuitry has already been formed and have been thinned for backsurface illumination. These CCDs may be delta doped, and aspects of this type of CCD have been described in several prior articles in NASA Tech Briefs. Unlike prior low-temperature bonding subprocesses based on the use of epoxies or waxes, the high-temperature bonding subprocess is compatible with the deltadoping process as well as with other CCD-fabrication processes. The present improved process and its bonding, thinning, and delta-doping subprocesses, are characterized as postfabrication processes because they are undertaken after the fabrication of CCD circuitry on the front side of a full-thickness silicon substrate. In a typical case, it is necessary to reduce the thickness of the CCD to between 10 and 20 m in order to take advantage of back-side illumination and in order to perform delta doping and/or other back-side treatment to enhance the quantum efficiency. In the prior approach to the fabrication of back-side-illuminated CCDs, the thinning subprocess turned each CCD into a free-standing membrane that was fragile and tended to become wrinkled. In the present improved process, prior to thinning and delta doping, a CCD is bonded on its front side to a silicon substrate that has been prefabricated to include cutouts to accommodate subsequent electrical connections to bonding pads on the CCD circuitry. The substrate provides structural support to increase ruggedness and maintain flatness. At the beginning of this process, the back side of a CCD as fabricated on a full-thickness substrate is polished. Silicon nitride is deposited on the back side, opposite the bonding pads on the front side, in order to define a relatively thick frame. The portion of the CCD not covered by the frame is the portion to be thinned by etching.

Grunthaner, Paula↗
NASA NTRS1985

Present and future CCDs for UV and X-ray scientific measurements

Interacting quantum efficiencies in excess of 50 percent have been demonstrated with CCDs throughout the spectral range 600-9,00 A, and comparable sensitivity is expected to continue to wavelengths as short as a few Angstroms. Nondispersive X-ray spectra throughout the 250-8000 V range have been obtained with an FWHM spectral resolution of 200-250 eV. At present, however, both spectral and spatial resolution is limited at some energies by the diffusion of photogenerated charge into more than one picture element. Progress in reducing charge diffusion is reported, with particular attention given to a theoretical diffusion model and its implications for further improvement.

Janesick, J. R.↗
NASA NTRS1985

Potential of CCDs for UV and X-ray plasma diagnostics

A program is under way to develop charge-coupled device (CCD) sensors for space-based X-ray astronomy imaging spectrometers. To date, laboratory line-emission spectra have been acquired throughout the range of 277 to 8000 eV (carbon through copper K-alpha emission) and CCD sensitivity has been demonstrated throughout the range of 1.1 through 8000 eV. Image resolution is excellent, limited almost entirely by the 15 micron pixel size. These results are presented and specialized techniques are described which permit such low energy response, high spectral resolution, and efficient charge collection. Finally, analysis is presented of one particular CCD characteristic which currently limits UV and X-ray performance: charge diffusion.

Janesick, J. R.↗
NASA NTRS2006

Delta-Doped High Purity Silicon UV-NIR CCDs with High QE and Low Dark Current

Delta doping process was developed on p-channel CCDs for MIDEX-Orion and JDEM/SNAP and was applied to large format (2k x4k) CCDs. Delta doping is applied to fully-fabricated CCDs (complete with Al metallization). High QE and low dark current is demonstrated with delta doped p-channel CCDs. In-house AR coating is demonstrated. Advantages include: Delta doping enables high QE and stability across the entire spectral range attainable with silicon. Delta doping is a low temperature process and is compatible with fully-fabricated detector arrays. Same base device for Orion two channels. High radiation tolerance and no thinning requirements of high purity p-channel. CCDs are additional advantages.

Orion↗
NASA NTRS1994

Delta-Doped CCDs for Enhanced UV Performance

Thin, backside-illuminated CCds are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100 percent internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully-processed commercial CCd die in which 30 percent of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months.

silicon↗
NASA NTRS2004

NASA Tech Briefs, April 2004

Topics covered include: Analysis of SSEM Sensor Data Using BEAM; Hairlike Percutaneous Photochemical Sensors; Video Guidance Sensors Using Remotely Activated Targets; Simulating Remote Sensing Systems; EHW Approach to Temperature Compensation of Electronics; Polymorphic Electronic Circuits; Micro-Tubular Fuel Cells; Whispering-Gallery-Mode Tunable Narrow-Band-Pass Filter; PVM Wrapper; Simulation of Hyperspectral Images; Algorithm for Controlling a Centrifugal Compressor; Hybrid Inflatable Pressure Vessel; Double-Acting, Locking Carabiners; Position Sensor Integral with a Linear Actuator; Improved Electromagnetic Brake; Flow Straightener for a Rotating-Drum Liquid Separator; Sensory-Feedback Exoskeletal Arm Controller; Active Suppression of Instabilities in Engine Combustors; Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs; Chemical Thinning Process for Fabricating UV-Imaging CCDs; Pseudoslit Spectrometer; Waste-Heat-Driven Cooling Using Complex Compound Sorbents; Improved Refractometer for Measuring Temperatures of Drops; Semiconductor Lasers Containing Quantum Wells in Junctions; Phytoplankton-Fluorescence-Lifetime Vertical Profiler; Hexagonal Pixels and Indexing Scheme for Binary Images; Finding Minimum-Power Broadcast Trees for Wireless Networks; and Automation of Design Engineering Processes.

Source record↗
NASA NTRS2000

Ultrastable and uniform EUV and UV detectors

In this paper we will discuss the performance of delta-doped CCDs in UV and EUV, our in-house thinning capability, bonding approaches for producing flat focal plane arrays, and in-house capabilities of directly applied antireflection coatings.

EUV↗
NASA NTRS2000

Delta-doped imagers for UV and EUV applications

In this paper we will discuss performance of delta-doped CCDs in UV and EUV, our in-house thinning capability, bonding approaches for producing flat focal plane arrays, and in-house capabilities of directly applied antireflection coatings.

UV EUV delta-doped imagers↗
NASA NTRS1989

Development of large CCD arrays with enhanced UV performance

A development status evaluation is presented for proprietary UV-range CCDs for military and scientific applications requiring pixel sizes in the 18-micron range. The most recent developments in UV/X-ray responsive detectors have their bases in the backside illumination of multipinned phase (MPP) 1024 x 1024 CCD arrays, as well as in the initial exploration of open-pinned phase (OPP) techniques. The frontside performance of both MPP and OPP devices is noted to be excellent as well, and pinouts and mounting techniques have been defined which allow easy front-back operation comparisons. Novel backside processing techniques are being refined.

Varian, Richard H.↗
NASA NTRS2022

SPARCS Payload Assembly, Integration, and Test Update

The Star-Planet Activity Research CubeSat (SPARCS) is a 6U CubeSat under construction that is devoted to the photometric monitoring of M stars in the far-UV (FUV) and near-UV (NUV), to measure the time-dependent spectral slope, intensity and evolution of low-mass star high-energy radiation. We report on the progress made in the assembly, integration and test of the instrument payload at Arizona State University using a custom TVAC chamber and optical stimulus that provides calibration light sources and the custom contamination control environment that the FUV demands. The payload consists of a custom 90mm clear aperture telescope developed by Hexagon/Sigma Space, combined with a dichroic plate to separate the FUV and NUV beams developed by Teledyne Acton and Materion, married with twin focal plane array cameras separately optimized for their band passes as developed by JPL.

FUV↗
NASA NTRS2010

Characterization and Absolute QE Measurements of Delta-Doped N-Channel and P-Channel CCDs

In this paper we present the methodology for making absolute quantum efficiency (QE) measurements from the vacuum ultraviolet (VUV) through the near infrared (NIR) on delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, and good camera vacuum to prevent chip condensation, and more stringent handling requirements. The system used for these measurements was originally designed for deep UV characterization of CCDs for the WF/PC instrument on Hubble and later for Cassini CCDs.

Jacquot, Blake C.↗
NASA NTRS1994

Miniaturized Electronic System for the Planetary Integrated Camera Spectrometer

This paper discusses the design and implementation of a miniaturized electronic system for the Planetary Integrated Camera-Spectrometer (PICS). The PICS electronics demonstrates the application of Field Programmable Gate Arrays (FPGAs) and of analog hybrid technology to space flight multispectral systems. A discussion of the electronic system design illustrates how a multisensor instrument consisting of an UV CCD, two visible CCDs, and a near-IR focal plane assembly can be processed through a common set of electronics. Following the system design discussion, the actual electronic design will be presented. Each miniaturized module will be discussed as to functionality and performance. The test setup for bench checkout of a cooled CCD and an IR FPA, including results with breadboard electronics and with the hybrids are also described.

CCD↗
NASA NTRS1990

Imaging MAMA detector systems

Imaging multianode microchannel array (MAMA) detector systems with 1024 x 1024 pixel formats have been produced for visible and UV wavelengths; the UV types employ 'solar blind' photocathodes whose detective quantum efficiencies are significantly higher than those of currently available CCDs operating at far-UV and EUV wavelengths. Attention is presently given to the configurations and performance capabilities of state-of-the-art MAMA detectors, with a view to the development requirements of the hybrid electronic circuits needed for forthcoming spacecraft-sensor applications. Gain, dark noise, uniformity, and dynamic range performance data are presented for the curved-channel 'chevron', 'Z-plate', and helical-channel high gain microchannel plate configurations that are currently under evaluation with MAMA detector systems.

Slater, David C.↗