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Results for “V−V semiconductors”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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6 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Strongly Confined Bismuth Antimonide Quantum Dots

Bismuth antimonide (Bi 1−x Sb x ) has emerged as a highly promising material for quantum applications due to its complex band structure. In this study, spherical Bi 1−x Sb x quantum dots (QDs), with a diameter of around 8 ± 2 nm, were successfully synthesized by pulsed laser ablation in liquids. The energy bandgap was determined at 2.02 ± 0.27 eV, which is significantly higher than the bulk value (∼0.025 eV). The strong confinement nature of the dots was confirmed by the Raman peak shifts. The chemical composition of the Bi 1−x Sb x QDs was measured to be around 77 ± 2 at. % of Bi and 23 ± 2 at. % of Sb. The colloid containing the Bi 1−x Sb x QDs was classified as highly stable, displaying a zeta potential of −38 ± 18 mV. Finally, the Bi 1−x Sb x QDs exhibited an electron spin resonance (ESR) signal at room temperature and at cryogenic temperature (4.2 K); consequently, revealing the presence of paramagnetic states.

Alloys↗
DOE OSTI2024

NiGa 2 O 4 interfacial layers in NiO/Ga 2 O 3 heterojunction diodes at high temperature

NiO/Ga 2 O 3 heterojunction diodes have attracted attention for high-power applications, but their high temperature performance and reliability remain underexplored. Here, we report the time evolution of the electrical properties in the widely studied p-NiO/n-Ga 2 O 3 heterojunction diodes and formation of NiGa 2 O 4 interfacial layers at high temperatures. Results of our thermal cycling experiment show an initial leakage current increase which stabilizes after sustained thermal load, due to reactions at the NiO–Ga 2 O 3 interface. High-resolution TEM microstructure analysis of the devices after thermal cycling indicates that the NiO–Ga 2 O 3 interface forms a ternary compound at high temperatures, and thermodynamic calculations suggest the formation of the spinel NiGa 2 O 4 layer between NiO and Ga 2 O 3 . First-principles defect calculations find that NiGa 2 O 4 shows low p-type intrinsic doping and hence can serve to limit electric field crowding at the interface. Vertical NiO/ Ga 2 O 3 diodes with intentionally grown 5 nm thin spinel-type NiGa 2 O 4 interfacial layers show an excellent device ON/OFF ratio of >10 10 (± 3 V), V ON of ~1.9 V, and increased breakdown voltage of ~1.2 kV for an initial unoptimized 300 lm diameter device. These p–n heterojunction diodes are promising for high-voltage, high temperature applications.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2020

Experimental studies of 1.5 – 1.6 μm high-power single-frequency semiconductor lasers

High-power semiconductor laser systems based on 1.5 – 1.6 μm single-frequency distributed feedback (DFB) lasers with a sidewall Bragg diffraction grating are developed and their current – voltage, light – current, and spectral characteristics are experimentally studied. The characteristics of conventional lasers with a Fabry – Perot cavity and DFB lasers fabricated from one and the same heterostructure are compared. At a pump current not exceeding 700 mA, a conventional laser with a cavity length of 1.6 mm and a mesa-stripe width of 3 μm emits a power no lower than 200 mW versus 150 mW of the DFB laser; both lasers are mounted in a housing 11 mm in diameter. The DFB laser mounted in a butterfly housing emits a power no lower than 100 mW at the exit of the single-mode cable at a pump current not exceeding 500 mA, which, at a 60 % coupling efficiency, corresponds to a power no lower than 165 mW; the side-mode suppression ratio in this case is no lower than 53 dB. It is shown that the wavelength deviation with changing pump current and temperature is almost an order of magnitude lower for the DFB laser than for the conventional laser. (paper)

36 MATERIALS SCIENCE↗
DOE OSTI2020

Triple integrated laser – thyristor

A triple laser – thyristor, i. e., a semiconductor laser with three emitting sections monolithically integrated with an electronic switch (thyristor) is experimentally studied. For comparison, the output characteristics of single and double laser – thyristors are presented. It is shown that the functional integration of a laser with a thyristor in one heterostructure allows the laser to efficiently operate in a pulsed regime (output power ∼50 W), the use of vertical integration of two laser sections increases the power to ∼90 W, and the integration of three laser sections makes it possible to increase the output optical power to ∼120 W with all other conditions being the same. (paper)

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

A first test of CUPID prototypal light detectors with NTD-Ge sensors in a pulse-tube cryostat

CUPID is a next-generation bolometric experiment aiming at searching for neutrinoless double-beta decay with ~250 kg of isotopic mass of 100 Mo. It will operate at ~10 mK in a cryostat currently hosting a similar-scale bolometric array for the CUORE experiment at the Gran Sasso National Laboratory (Italy). CUPID will be based on large-volume scintillating bolometers consisting of 100 Mo-enriched Li 2 MoO 4 crystals, facing thin Ge-wafer-based bolometric light detectors. In the CUPID design, the detector structure is novel and needs to be validated. In particular, the CUORE cryostat presents a high level of mechanical vibrations due to the use of pulse tubes and the effect of vibrations on the detector performance must be investigated. In this paper we report the first test of the CUPID-design bolometric light detectors with NTD-Ge sensors in a dilution refrigerator equipped with a pulse tube in an above-ground lab. Light detectors are characterized in terms of sensitivity, energy resolution, pulse time constants, and noise power spectrum. Despite the challenging noisy environment due to pulse-tube-induced vibrations, we demonstrate that all the four tested light detectors comply with the CUPID goal in terms of intrinsic energy resolution of 100 eV RMS baseline noise. Indeed, we have measured 70–90 eV RMS for the four devices, which show an excellent reproducibility. We have also obtained high energy resolutions at the 356 keV line from a 133 Ba source, as good as Ge semiconductor γ detectors in this energy range.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Optical, electrical, and EPR studies of polycrystalline Al:Cr:ZnSe gain elements

Transition metal-doped II-VI (TM:II-VI) chalcogenides are well-known laser materials for optically pumped middle-infrared lasers. Cr:ZnSe is a key representative of this class of transition metal doped II-VI gain media and is arguably considered the material of choice for optically pumped middle-infrared lasers. In addition to effective mid-IR lasing under optical excitation, these crystals, being wide-band semiconductors, hold the potential for direct electrical excitation. One way to form n-type conductivity in ZnSe crystals is by annealing them in a melt of Zn-Al alloy. However, this annealing of Cr:ZnSe crystals results in their purification and transfer of chromium to the melt of Zn-Al alloy. In this article, we report on optimizing the doping technique for providing n-type conductivity in Al:Cr:ZnSe crystals while preserving the chromium concentration. Al:Cr:ZnSe samples with resistivities ranging from 10.8 to 992 Ω-cm were fabricated. While the 2 + valence state of Cr is typically dominant in Cr:ZnSe, both Cr 2+ and Cr + were detected in Al:Cr:ZnSe samples. The maximum level of Cr + concentration was measured to be 4 × 10 18 cm -3 .

36 MATERIALS SCIENCE↗