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At least 19 records

Spectroscopic properties of oxygen vacancies in LaAlO 3

Oxygen vacancies in LaAlO 3 (LAO) play an important role in the formation of the two-dimensional electron gas observed at the LaAlO 3 /SrTiO 3 interface and affect the performance of MOSFETs using LAO as a gate dielectric. However, their spectroscopic properties are still poorly understood, which hampers their experimental identification. Here we predict the absorption spectra and ESR parameters of oxygen vacancies in LAO using periodic and embedded cluster methods and density functional theory (DFT). The structure, charge distribution, and spectroscopic properties of the neutral (V 0 O) and charged (V + O and V 2+ O ) oxygen vacancies in cubic and rhombohedral LaAlO 3 are investigated. The highest intensity optical transitions [calculated using time-dependent DFT (TDDFT)], from the oxygen vacancy states to the conduction-band states have onsets at 3.5 and 4.2 eV for V 0 O and 3.6 eV for V + O in rhombohedral LAO and 3.3 and 4.0 eV for V 0 O and 3.4 eV for V + O in cubic LAO, respectively. Also reported are the isotropic g value (2.004026) and hyperfine coupling constants of V + O , which are compared to the experimental data obtained using electron spin resonance (ESR) spectroscopy, and accurately predict both the position and the width (3 mT) of its ESR signature. These results may further facilitate the experimental identification of oxygen vacancies in LAO and help to establish their role at the LAO/STO interfaces and in nanodevices using LAO.

36 MATERIALS SCIENCE↗

Creation And Ordering Of Oxygen Vacancies At WO3-d And Perovskite Interfaces

Changes in structure and composition resulting from oxygen deficiency can strongly impact the physical and chemical properties of transition metal oxides. However, it is extremely difficult to accurately characterize the oxygen deficiency levels and pinpoint how these materials properties change in response. In this paper, the effects of substrate strain and oxidizing power on the creation and distribution of oxygen defects in WO3 thin films are investigated in detail. An 18O2 isotope labeled time-of-flight secondary ion mass spectrometry (ToF-SIMS) study reveals that WO3-films grown on STO display a significantly larger oxygen vacancy gradient along the growth direction. This result is corroborated by scanning transmission electron microscopy (STEM) images which reveal a large number of defects present close to the interface to accommodate interfacial strain, leading to ordering of oxygen vacancies and formation of semi-aligned Magnéli phases. The strain is gradually released and tetragonal phase with much better crystallinity is observed at the film/vacuum interface. The changes in structure resulting from oxygen defect creation are shown to have a direct impact on the electronic and optical properties of the films.

Zhang, Kelvin H.↗

Iron Vacancies Accommodate Uranyl Incorporation into Hematite

Radiotoxic uranium contamination in natural systems and nuclear waste containment can be sequestered by incorporation into naturally abundant iron (oxyhydr)oxides such as hematite (-Fe2O3) during mineral growth. The stability and properties of the resulting uranium-doped material depend on the local coordination environment of incorporated uranium. While measurements of uranium coordination have been attempted using extended X-ray absorption fine structure (EXAFS) analysis, traditional shell-by-shell EXAFS fitting yields ambiguous results. We used hybrid functional ab initio molecular dynamics (AIMD) simulations for various defect configurations to generate EXAFS spectra which were fitted to experimental U L3-edge EXAFS for U6+-doped hematite. We discovered that the hematite lattice accommodates a trans-dioxo uranyl-like configuration for U6+ that substitutes for structural Fe3+, which requires two partially protonated Fe vacancies situated at opposing corner-sharing lattice sites. Surprisingly, the best match to experiment included significant proportions of vacancy configurations other than the minimum-energy configuration, pointing to the importance of incorporation mechanisms and kinetics over thermodynamics in determining the state of an impurity incorporated in a host phase under hydrothermal conditions.

McBriarty, Martin E.↗

Initial Reduction of the PdO(101) Surface: Role of Oxygen Vacancy Formation Kinetics

Here, we investigated the initial thermal reduction of the PdO(101) surface using density functional theory (DFT) calculations. The defect-free PdO(101) surface consists of parallel rows of undercoordinated Pd and O atoms (Pd cus and O cus , respectively). DFT was used to map out the elementary processes of O cus vacancy formation, oxygen surface atom diffusion along the Pd cus rows, and various O 2 formation pathways. Because oxygen vacancies form during the reduction of the surface, the elementary processes were examined with and without the presence of adjacent O cus vacancies. DFT calculations show that the presence of oxygen vacancies strongly affects the barriers of adjacent surface processes. Barriers for O vacancy formation are reduced by nearly 50% with an adjacent O vacancy. The barrier for O 2 formation along the Pd cus row drops from 1.54 eV on the defect-free PdO(101) surface to 0.81 eV in the presence of an O cus vacancy dimer. Yet, the presence of O cus vacancies also leads to more strongly bound O 2 on the Pd cus row. The strong neighbor effect of O vacancies on the PdO(101) surface will favor the growth of O vacancy chains and increase the rate of thermal reduction of the surface, both features that have been observed in recent ultrahigh vacuum isothermal reduction experiments of the PdO(101) surface.

Defects in solids↗

Origin, nature, and the dynamic behavior of nanoscale vacancy clusters in Ni-rich layered oxide cathodes

Oxygen and transition metal (TM) vacancies in transition metal oxides (TMOs) play an important role in materials functionalities. For TMO cathodes of Li-ion batteries, vacancies can be introduced, either deliberately or inevitably, during materials synthesis or upon electrochemical cycling. Effects of vacancies on the electrochemical properties of cathodes critically depend on the dynamic characteristics of vacancies during the battery cycling. However, a fundamental understanding of such characteristics in the layer structured cathode remains elusive. Here, using scanning transmission electron microscopy (STEM), we reveal a cycling-induced aggregation behavior of oxygen and TM vacancies in a Ni-rich layer structured cathode of secondary particles. We discover that during the initial charging, vacancies aggregate to form visible vacancy-rich nanoregions (vacancy clusters) firstly at the outer layer of the secondary particle, and then the vacancy-cluster populated region extends to the inner part of particle upon fully charged. The spatial distinction of preferential nucleation of vacancy clusters at the outer layer indicates that the vacancy migration and clustering is associated with Li migration flux, which is larger at the outer layer, as all the Li from the inner part has to go through the outer layer. With extended cycling (> 50), these vacancy clusters become immobilized. We further reveal that the generation of these vacancy clusters is correlated to the material-synthesis conditions. Our findings solve a long-standing puzzle on the origin, nature, and behavior of the commonly visible vacancy clusters in the NMC cathode, providing insights on correlation between properties and dynamic behaviors of atomic-scale defects in layered oxide cathodes.

Li-ion batteries, layered oxide cathodes, NMC, cat↗

Vacancies and Vacancy-Mediated Self Diffusion in Cr 2 O 3 : A First-Principles Study

Charged and neutral vacancies and vacancy mediated self diffusion in alpha-Cr2O3 were investigated using first principles density functional theory (DFT) and periodic supercell formalism. The vacancy formation energies of charged defects were calculated using the electrostatic finite-size corrections to account for electrostatic interactions between supercells and the corrections for the bandgap underestimation in DFT. Calculations predict that neutral oxygen (O) vacancies are predominant in chromium (Cr)-rich conditions and Cr vacancies with -2 charge state are the dominant defects in O-rich conditions. The charge transition levels of both O and Cr vacancies are deep within the bandgap indicating the stability of these defects. Transport calculations indicate that vacancy mediated diffusion along the basal plane has lower energy barriers for both O and Cr ions. The most favorable vacancy mediated self diffusion processes correspond to the diffusion of Cr ion in 3+ charge state and O ion in 2- state, respectively. Our calculations reveal that Cr triple defects comprised of Cr in octahedral interstitial sites with two adjacent Cr vacancies along the c-axis have a lower formation energy compared to that of charged Cr vacancies. The formation of such triple defects facilitate Cr self diffusion along the c-axis.

Medasani, Bharat (ORCID:0000000220734162)↗

Influence of Hydrogen Isotopes on Vacancy Formation and Antisite Defect Diffusion in Palladium and Vanadium Metals

Density functional theory calculations are performed to study the interaction between hydrogen isotopes, vacancy, and antisite defects in Pd and V. Various defect configurations and defect-defect distances are systematically explored. Binding energies and migration energy barriers are calculated and tabulated. The study provides atomistic data for subsequent mesoscale simulations of tritium, vacancy, and antisite diffusion. In Pd, a strong binding is found between a vacancy and tritium (0.16 eV). This tritium binding increases the thermal concentration of vacancies by a factor of ~10 at 500 ?C. The increase in vacancy concentration enhances V antisite diffusion in Pd by a factor of ~6 at 500 ?C. The influence of tritium is even stronger in V, with a tritium and vacancy binding energy of 0.38 eV. Such a strong binding increases the thermal concentration of vacancies by a factor of ~300 at 500 ?C. The increase in vacancy concentration enhances Pd antisite diffusion in V by a factor of ~640 at 500 ?C. Vanadium and Pd exhibit a strong driving force to intermix with a formation energy of -1.57 eV for V antisite in Pd and -1.05 eV for Pd antisite in V. The results suggest vanadium diffusion into Pd is energetically stronger than the reverse. Zero-point-energy corrections are taken into account and calculations for hydrogen and tritium are presented.

Setyawan, Wahyu↗

Injection of oxygen vacancies in the bulk lattice of layered cathodes

Surfaces, interfaces, and grain boundaries are, classically, known to be sinks at which defects generated within bulk lattice will preferentially migrate to and get annihilated, therefore rejuvenating a crystalline lattice to restore the intended functionalities.1, 2, 3 Here we report an inverse case by which the defects generated at the particle surface are continuously pumped into the bulk lattice and consequentially compromising the intended functionalities. We discovered that during the operation of a rechargeable battery, oxygen vacancies generated at cathode particle surfaces migrate toward inside of a perfect lattice in lithium-rich layered cathodes, featuring electrochemical driven surface vacancy creation, injection and condensation phenomenon and revealing an unrecognized surface process induced bulk lattice degradation featured with void formation and lattice reorganization. This process is associated with a high-cutoff voltage at which the anionic redox is activated. Coupling with calculations, we substantiate that triggering of anionic redox leads to sharply lowering of both formation energy of oxygen vacancy and migration barrier of oxidized oxide ions, therefore enabling migration of oxygen vacancy via oxidized oxide ion and leading to the injection of oxygen vacancy generated at the particle surface into the bulk lattice. This work unveils unpredicted behavior of oxidized oxide ion, leading to essential insight for designing of high capacity cathode for better batteries through coupled cationic and anionic redox dynamics in layered cathodes. In a broad term, this work provides insight on the intimate coupling between interfacial process and bulk lattice behavior for governing electrode functionality.

Yan, Pengfei↗

Fe Vacancy Order and Domain Distribution in A{sub x}Fe{sub 2−y}Se{sub 2}

The Fe vacancy and its ordering pattern is a unique property of the A{sub x}Fe{sub 2−y}Se{sub 2} (A = K, Rb, Cs) superconductors. Below the structural transition temperature T{sub S} ∼ 550 K, the system phase separates into the I4/mmm phase with no Fe vacancy and the I4/m phase with the √5×√5×1 vacancy order. In this work, an Ising-like Hamiltonian defined on the Fe-sublattice is constructed and employed in a Metropolis Monte Carlo simulation to study the Fe vacancy order and the domain distribution under different thermal treatments. A third phase with randomly distributed Fe vacancies and space group I4/mmm is observed in the simulation. The response of the volume fraction of this simulated phase under thermal treatment shows a direct connection to the change of the superconducting shielding fraction under annealing and quenching processes, indicating a close relation between the vacancy disordered I4/mmm phase and the superconducting phase.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite Films

The ability to manipulate oxygen anion defects rather than metal cations in complex oxides can facilitate creating new functionalities critical for emerging energy and device technologies. However, the difficulty in activating oxygen at reduced temperatures hinders the deliberate control of important defects, oxygen vacancies. Here, strontium cobaltite (SrCoOx) is used to demonstrate that epitaxial strain is a powerful tool for manipulating the oxygen vacancy concentration even under highly oxidizing environments and at annealing temperatures as low as 300 degrees C. By applying a small biaxial tensile strain (2%), the oxygen activation energy barrier decreases by approximate to 30%, resulting in a tunable oxygen defi cient steady-state under conditions that would normally fully oxidize unstrained cobaltite. These strain-induced changes in oxygen stoichiometry drive the cobaltite from a ferromagnetic metal towards an antiferromagnetic insulator. The ability to decouple the oxygen vacancy concentration from its typical dependence on the operational environment is useful for effectively designing oxides materials with a specific oxygen stoichiometry.

Petrie, Jonathan R.↗

Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment.

Veal, Boyd W.↗

Bond Valences and Anharmonicity in Vacancy-Ordered Double Perovskite Halides

We report that anharmonic lattice dynamics are intimately linked with optical and electronic properties in perovskite halides semiconductors. Vacancy-ordered double perovskites are a subset of the perovskite halide family containing isolated octahedral units. The absence of polyhedral connectivity engenders the vacancy-ordered double perovskites with additional degrees of dynamic freedom, which presents an ideal structural framework to study dynamic-property relationships in perovskite halide semiconductors. In the present study, we examine the structure and bonding origins of anharmonicity in the vacancy-ordered double perovskites Cs 2 Sn 1-x Te x I 6 . While X-ray diffraction indicates that all members adopt the cubic vacancy-ordered double perovskite structure, the local coordination environment probed by X-ray pair distribution function (XPDF) analysis reveals asymmetry of the Cs–I/I–I pair correlation that smoothly decreases with increasing tellurium content. Temperature-dependent neutron total scattering suggests that this asymmetry in the PDF occurs due to anharmonic lattice dynamics arising from octahedral tilting and Cs + displacements, as supported by Reverse Monte Carlo simulations of the Cs 2 SnI 6 and Cs 2 TeI 6 end members. We further correlate the trends in asymmetry and anharmonicity with the bond valence sum of the Cs + ion, and find that the anharmonicity vanishes when the bonding preferences of the Cs + are satisfied by the size of the cuboctahedral void. Lastly, this study presents a simple and effective approach for understanding the origin of anharmonicity in vacancy-ordered double perovskite materials.

36 MATERIALS SCIENCE↗

Vacancy‐Enabled O3 Phase Stabilization for Manganese‐Rich Layered Sodium Cathodes

Abstract Manganese‐rich layered oxide materials hold great potential as low‐cost and high‐capacity cathodes for Na‐ion batteries. However, they usually form a P2 phase and suffer from fast capacity fade. In this work, an O3 phase sodium cathode has been developed out of a Li and Mn‐rich layered material by leveraging the creation of transition metal (TM) and oxygen vacancies and the electrochemical exchange of Na and Li. The Mn‐rich layered cathode material remains primarily O3 phase during sodiation/desodiation and can have a full sodiation capacity of ca. 220 mAh g −1 . It delivers ca. 160 mAh g −1 specific capacity between 2–3.8 V with >86 % retention over 250 cycles. The TM and oxygen vacancies pre‐formed in the sodiated material enables a reversible migration of TMs from the TM layer to the tetrahedral sites in the Na layer upon de‐sodiation and sodiation. The migration creates metastable states, leading to increased kinetic barrier that prohibits a complete O3‐P3 phase transition.

Xiao, Biwei↗