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At least 19 records

Nuclear Data Sheets for A = 42

The experimental data are evaluated for known nuclides of mass number A = 42 (Al, Si, P, S, Cl, Ar, K, Ca, Sc, Ti, V, Cr). Detailed evaluated level properties and related information are presented, including adopted values of level and γ–ray energies, decay data (energies, intensities and placement of radiations), and other spectroscopic data. This work supersedes earlier full evaluations of A = 42 published by B. Singh, J.A. Cameron – Nucl.Data Sheets 92, 1 (2001) and P.M. Endt – Nucl. Phys. A521, 1 (1990); Errata and Addenda Nucl. Phys. A529, 763 (1991); Errata Nucl. Phys. A564, 609 (1993) (also P.M. Endt – Nucl. Phys. A633, 1 (1998) update). No excited states are known in {sup 42}Al, {sup 42}P, {sup 42}V and {sup 42}Cr, and structure information for {sup 42}Si and {sup 42}S is quite limited. There are no decay schemes available for the decay of {sup 42}Al, {sup 42}Si, {sup 42}P, {sup 42}V and {sup 42}Cr, while the decay schemes of {sup 42}Cl and {sup 42}Ti are incomplete in view of scarcity of data, and large gap between their Q–values and the highest energy levels populated in corresponding daughter nuclei. Structures of {sup 42}Ca, {sup 42}K, {sup 42}Sc and {sup 42}Ar nuclides remain the most extensively studied via many different nuclear reactions and decays.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Atomic data and theoretical X-ray spectra of Ge-like through V-like W ions

The atomic structure and spectra of ten tungsten ions have been calculated using the Flexible Atomic Code. The calculations yield energy levels, radiative lifetimes, spectral line positions, transition probability rates, and oscillator strengths for the tungsten ions isoelectronic to germanium, W{sup 42+}, through vanadium, W{sup 51+}. Collisional–radiative models for high-temperature, low-density plasmas have been implemented to produce line emissivities for X-ray transitions in the 1–4 keV (3–12 Å) spectral interval. The Ge-like through V-like W ions are important in nuclear fusion research where their spectra may provide diagnostic information on magnetically confined plasmas.

74 ATOMIC AND MOLECULAR PHYSICS↗

Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

We have studied the effect of top gate bias (V{sub TG}) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm{sup 2} intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the V{sub TG} from −15 to +15 V. By changing V{sub TG} from negative to positive, the Fermi level (E{sub F}) shifts toward conduction band edge (E{sub C}), which substantially controls the conversion of neutral vacancy to charged one (V{sub O} → V{sub O}{sup +}/V{sub O}{sup 2+} + e{sup −}/2e{sup −}), peroxide (O{sub 2}{sup 2−}) formation or conversion of ionized interstitial (O{sub i}{sup 2−}) to neutral interstitial (O{sub i}), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at V{sub TG} = −15 V, which gradually decreases to −0.42 V shift at V{sub TG} = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (V{sub O}{sup +}/V{sub O}{sup 2+}/O{sub 2}{sup 2−}/O{sub i}) and/or hole trapping in the a-IGZO /interfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Synthesis and characterization of two crystallographic forms of Ag{sub 0.79}VS{sub 2}

A previously unreported compound, Ag{sub 0.79}VS{sub 2}, has been synthesized; its structure and elementary properties are reported. Ag{sub 0.79}VS{sub 2} crystallizes in two forms, designated as the α and β, related to the 1s-InTaS{sub 2} structure. Single crystal x-ray diffraction shows the α form to have a single layer hexagonal structure with a unit cell of 3.213(3) Å×7.809(6) Å, consisting of layers of edge-shared VS{sub 6} triangular prisms separated by layers of Ag. The β form is similar but has an a{sub o}√((3)) supercell in the basal plane, yielding a unit cell of 5.573(5) Å×7.822(6) Å. Both forms have disordered and displaced silver in the basal plane, but the β form has partial ordering of its silver sublattice and in-plane vanadium trimers. Resistivity measurements show metallic temperature dependence with an unusual hysteresis between 210 K and 130 K. Magnetic susceptibility measurements show Pauli Paramagnetic behavior. The Seebeck coefficient at 300 K is 42 µV/K. - Graphical abstract: Red=Vanadium, Gray=Silver, Yellow=Sulfur. Top left is α-Ag{sub 0.79}VS{sub 2} in the 1s-InTaS{sub 2} structure type. Top right: 2a×2b projection down the c-axis with displacement ellipsoids (50% probability) of atoms drawn to illustrate the split silver model. Bottom left is β-Ag{sub 0.79}VS{sub 2} having the a{sub o}√((3)) supercell. Bottom right: projection along the c-axis, displacement ellipsoids of atoms drawn. - Highlights: • Two crystallographic forms of Ag{sub 0.79}VS{sub 2}, designated α and β, are reported. • They are found to crystallize in the 1s-InTaS{sub 2} structure type. • β-Ag{sub 0.79}VS{sub 2} has partial ordering of the Ag sublattice and vanadium trimers. • Ag{sub 0.79}VS{sub 2} shows Pauli Paramagnetic behavior, a Seebeck coefficient of 42 µV/K at 300 K. • Ag{sub 0.79}VS{sub 2} shows metallic resistivity with an unusual hysteresis between 210 K and 130 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The influence of pairing correlations on the isospin symmetry breaking corrections of superallowed Fermi beta decays

Within the framework of quasi-particle random phase approximation, the isospin breaking correction of superallowed 0{sup +} {yields} 0{sup +} beta decay and unitarity of Cabibbo-Kobayashi-Maskawa mixing matrix have been investigated. The broken isotopic symmetry of nuclear part of Hamiltonian has been restored by Pyatov's method. The isospin symmetry breaking correction with pairing correlations has been compared with the previous results without pairing. The effect of pairing interactions has been examined for nine superallowed Fermi beta decays; their parent nuclei are {sup 26}Al, {sup 34}Cl, {sup 38}K, {sup 42}Sc, {sup 46}V, {sup 50}Mn, {sup 54}Co, {sup 62}Ga, {sup 74}Rb.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

A Fixed-Flexible BESS Allocation Scheme for Transmission Networks Considering Uncertainties

Battery energy storage systems (BESSs) can play a key role in mitigating the intermittency and uncertainty associated with adding large amounts of renewable energy to the bulk power system (BPS). Two BESS technologies that have gained prominence in this regard are Lithium-ion (LI) BESS and Vanadium redox flow (VRF) BESS. Here, this paper proposes a fixed-flexible BESS allocation scheme that exploits the complementary characteristics of LI and VRF BESSs to attain optimal techno-economic benefits in a wind-integrated BPS. Studies carried out on relatively large transmission networks demonstrate that benefits such as reduction in system operation cost, wind spillage, voltage fluctuations, and discounted payback period, can be realized by using the proposed scheme.

42 ENGINEERING↗

Imaging of Electrothermal Filament Formation in a Mott Insulator

Resistive switching—the current- and voltage-induced change of electrical resistance—is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching in a Mott insulator, which undergoes a thermally driven metal-to-insulator transition. Two distinct switching mechanisms are reported for such a system: electric-field-driven resistive switching and electrothermal resistive switching. The latter results from an instability caused by Joule heating. Here, we present the visualization of the reversible resistive switching in a planar V 2 O 3 thin-film device using high-resolution wide-field microscopy in combination with electric transport measurements. We investigate the interaction of the electrothermal instability with the strain-induced spontaneous phase separation in the V 2 O 3 thin film at the Mott transition. The photomicrographs show the formation of a narrow metallic filament with a minimum width ≲500 nm. Although the filament formation and the overall shape of the current-voltage characteristics (IVCs) are typical of an electrothermal breakdown, we also observe atypical effects such as oblique filaments, filament splitting, and hysteretic IVCs with sawtoothlike jumps at high currents in the low-resistance regime. We are able to reproduce the experimental results in a numerical model based on a two-dimensional resistor network. This model demonstrates that resistive switching in this case is indeed electrothermal and that the intrinsic heterogeneity is responsible for the atypical effects. This heterogeneity is strongly influenced by strain, thereby establishing a link between switching dynamics and structural properties.

42 ENGINEERING↗

Switching Dynamics in Vanadium Dioxide-Based Stochastic Thermal Neurons

We report on switching dynamics of individual and coupled vanadium dioxide (VO 2 ) devices subject to voltage pulses as the temperature is systematically varied from room temperature spanning the insulator–metal transition (IMT) temperature. The switching voltage of single devices has a strong relationship with both temperature and voltage pulsewidth. Two-step switching in connected VO 2 devices has been noted in current transient plots and was found to depend on temperature, pulsewidth, and pulse amplitude. Experimental switching behavior measured from VO 2 artificial neurons was implemented into a spiking neural network (SNN). During training, modulating the switching voltage via temperature affords a novel method to implement homeostasis with the coupled devices. Simulation results show the efficacy of the stochastic neuronal characteristics and the proposed homeostasis mechanism on a standard digit recognition task. As a result, these studies contribute to ongoing efforts in neuromorphic computing exploiting collective phase transitions.

42 ENGINEERING↗

Highly Selective Carbon-Supported Boron for Oxidative Dehydrogenation of Propane

Bulk boron materials, such as hexagonal boron nitride (h-BN), are highly selective catalysts for the oxidative dehydrogenation of propane (ODHP). Previous attempts to improve the productivity of these systems involved the immobilization of boron on silica and resulted in less selective catalysts. Here, we report that acid-treated, activated carbon-supported boron prepared via incipient wetness impregnation with boric acid (B/OAC) exhibits equal propylene selectivity and improved productivity (kg propylene kg cat -1 hr -1 ) as compared to h-BN. Characterization of the fresh and spent catalysts with infrared, Raman, X-ray photoelectron, and solid-state NMR spectroscopies reveals the presence of oxidized/hydrolyzed boron that is clustered on the surface of the support.

03 NATURAL GAS↗

Elution of uranium and transition metals from amidoxime-based polymer adsorbents for sequestering uranium from seawater

High-surface-area amidoxime and carboxylic acid grafted polymer adsorbents developed at Oak Ridge National Laboratory were tested for sequestering uranium in a flowing seawater flume system at the PNNL-Marine Sciences Laboratory. FTIR spectra indicate that a KOH conditioning process is necessary to remove the proton from the carboxylic acid and make the sorbent effective for sequestering uranium from seawater. The alkaline conditioning process also converts the amidoxime groups to carboxylate groups in the adsorbent. Both Na 2 CO 3 H 2 O 2 and hydrochloric acid elution methods can remove ~95% of the uranium sequestered by the adsorbent after 42 days of exposure in real seawater. The Na 2 CO 3 H 2 O 2 elution method is more selective for uranium than conventional acid elution. Iron and vanadium are the two major transition metals competing with uranium for adsorption to the amidoxime-based adsorbents in real seawater. Tiron (4,5-Dihydroxy-1,3-benzenedisulfonic acid disodium salt, 1 M) can remove iron from the adsorbent very effectively at pH around 7. The coordination between vanadium (V) and amidoxime is also discussed based on our 51V NMR data.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Evaluation of the Long-Term Operating Life of Chromium-Molybdenum-Vanadium Steel Components with Respect to Micro-Damage

Stress-rupture strength tests are performed and metal micro-damage is studied in an electron microscope for a body made of chromium-molybdenum-vanadium steel 15Kh1M1FL with a long (331,000 h) running time. Dependences are found for metal endurance on relative integrity, and images are given for different scale points of micro-damage. On the basis of conformity of damaging effects on the life of fixed values of integrity and micro-damage scale points residual life factoors are determined for the main points of the scale.

42 ENGINEERING↗

Structure-property relationships in NO x sensor materials composed of arrays of vanadium oxide nanoclusters

Here, the mixed-valent vanadium oxide based three-dimensional framework structure species [Cd 3 (H 2 O) 12 V 16 IV V 2 V O 36 (OH) 6 (AO 4 )]∙24H 2 O, (A=V,S) (Cd 3 (VO) o ) represents a rare example of an interesting sensor material which exhibits NO x {NO+NO 2 } semiconducting gas sensor properties under ambient conditions. The electrical resistance of the sensor material Cd 3 (VO) o decreases in air. Combined characterization studies revealed that the building block, {V 18 O 42 (AO 4 )} cluster, of 3-D framework undergoes oxidation and remains intact for at least 2 months. The decrease in resistance is attributable to the reactivity of molecular oxygen towards vanadium which results in an increase in the oxidation state as well as the coordination number of vanadium center and decrease in band gap of Cd 3 (VO) o . Based on these results we propose that the changes in semiconducting properties of Cd 3 (VO) o under ambient conditions are due to the greater overlap between the O 2p and V 3d orbitals occurring during the oxidation.

36 MATERIALS SCIENCE↗

Passive radiative thermal management using phase-change metasurfaces

Abstract Realizing innovative composite materials with passive thermal management capabilities and minimal ecological footprints is a challenging but much sought-after goal that would have a transformative effect on renewable energy sciences. We demonstrate an environmentally friendly metasurface utilizing vanadium dioxide (VO 2 ) that offers responsiveness to ambient temperature and potentially long-term stability. The metasurface enables passive thermal management by self-adjusting its absorptivity and emissivity response over a broad bandwidth ranging from visible to mid-infrared (IR) wavelengths. Above the VO 2 phase transition the metasurface exhibits increased mid-IR emissivity and reduced visible/near-IR absorptivity, creating an efficient radiative emission channel in the first atmospheric transparency window with reduced absorption of solar radiation. In contrast, below VO 2 ’s transition temperature, the metasurface increasingly absorbs sun light while minimizing mid-IR radiative heat losses. Moreover, a functional silicon layer eliminates the need for an additional capping layer commonly employed to protect VO 2 from environmental degradation. The additional protective layer often impedes the use and performance of VO 2 based devices in terrestrial as well as spacecraft applications. Therefore, the proposed durable and eco-friendly metasurface will be an excellent candidate for essential passive thermal regulation systems across residential and terrestrial applications.

42 ENGINEERING↗

Universal phase dynamics in VO 2 switches revealed by ultrafast operando diffraction

Understanding the pathways and time scales underlying electrically driven insulator-metal transitions is crucial for uncovering the fundamental limits of device operation. Using stroboscopic electron diffraction, we perform synchronized time-resolved measurements of atomic motions and electronic transport in operating vanadium dioxide (VO 2 ) switches. We discover an electrically triggered, isostructural state that forms transiently on microsecond time scales, which is shown by phase-field simulations to be stabilized by local heterogeneities and interfacial interactions between the equilibrium phases. This metastable phase is similar to that formed under photoexcitation within picoseconds, suggesting a universal transformation pathway. Our results establish electrical excitation as a route for uncovering nonequilibrium and metastable phases in correlated materials, opening avenues for engineering dynamical behavior in nanoelectronics.

36 MATERIALS SCIENCE↗

Vanadium dioxide film protected with an atomic-layer-deposited Al{sub 2}O{sub 3} thin film

A VO{sub 2} film exposed to ambient air is prone to oxidation, which will degrade its thermochromic properties. In this work, the authors deposited an ultrathin Al{sub 2}O{sub 3} film with atomic layer deposition (ALD) to protect the underlying VO{sub 2} film from degradation, and then studied the morphology and crystalline structure of the films. To assess the protectiveness of the Al{sub 2}O{sub 3} capping layer, the authors performed a heating test and a damp heating test. An ultrathin 5-nm-thick ALD Al{sub 2}O{sub 3} film was sufficient to protect the underlying VO{sub 2} film heated at 350 °C. However, in a humid environment at prolonged durations, a thicker ALD Al{sub 2}O{sub 3} film (15 nm) was required to protect the VO{sub 2}. The authors also deposited and studied a TiO{sub 2}/Al{sub 2}O{sub 3} bilayer, which significantly improved the protectiveness of the Al{sub 2}O{sub 3} film in a humid environment.

36 MATERIALS SCIENCE↗

High power operation of a nitrogen doped, vanadium compensated, 6H-SiC extrinsic photoconductive switch

We report the high power operation of nitrogen doped, vanadium compensated, 6H-SiC, extrinsic photoconductive switches with improved vanadium and nitrogen dopant density. Photoconductive switching tests are performed on 1 mm thick, m-plane, switch substrates at switch voltage and currents up to 17 kV and 1.5 kA, respectively. Sub-ohm minimum switch on resistance is achieved for peak optical intensities ≥35 MW/cm{sup 2} at 532 nm applied to the switch facet. A reduction of greater than nine orders of magnitude is observed in switch material resistivity between dark and illuminated states.

36 MATERIALS SCIENCE↗

Influence of Diffusional Surface Alloying on the Hardened-Layer Thickness for Gray-Iron Machine Parts

In diffusional surface alloying, gray-iron components of vehicles and machines are heated in contact with oxides of the alloying elements (chromium, titanium, vanadium, and molybdenum). The influence of the sample temperature and holding time in diffusional surface alloying on the thickness of the hardened layer is investigated, on the basis of experiment planning. The models obtained may be used to ensure specified thickness of the hardened layer in diffusional surface alloying, with maximum productivity in both production and repair processes.

36 MATERIALS SCIENCE↗

Direct Measurement of Crossover and Interfacial Resistance of Ion-Exchange Membranes in All-Vanadium Redox Flow Batteries

Among various components commonly used in redox flow batteries (RFBs), the separator plays a significant role, influencing resistance to current as well as capacity decay via unintended crossover. It is well-established that the ohmic overpotential is dominated by the membrane and interfacial resistance in most aqueous RFBs. The ultimate goal of engineering membranes is to improve the ionic conductivity while keeping crossover at a minimum. One of the major issues yet to be addressed is the contribution of interfacial phenomena in the influence of ionic and water transport through the membrane. In this work, we have utilized a novel experimental system capable of measuring the ionic crossover in real-time to quantify the permeability of ionic species. Specifically, we have focused on quantifying the contributions from the interfacial resistance to ionic crossover. The trade-off between the mass and ionic transport impedance caused by the interface of the membranes has been addressed. The MacMullin number has been quantified for a series of electrolyte configurations and a correlation between the ionic conductivity of the contacting electrolyte and the Nafion® membrane has been established. The performance of individual ion-exchange membranes along with a stack of various separators have been explored. We have found that utilizing a stack of membranes is significantly beneficial in reducing the electroactive species crossover in redox flow batteries compared to a single membrane of the same fold thickness. For example, we have demonstrated that the utilization of five layers of Nafion ® 211 membrane reduces the crossover by 37% while only increasing the area-specific resistance (ASR) by 15% compared to a single layer Nafion ® 115 membrane. Therefore, the influence of interfacial impedance in reducing the vanadium ion crossover is substantially higher compared to a corresponding increase in ASR, indicating that mass and ohmic interfacial resistances are dissimilar. We have expanded our analysis to a combination of commercially available ion-exchange membranes and provided a design chart for membrane selection based on the application of interest (short duration/high-performance vs. long-term durability). The results of this study provide a deeper insight into the optimization of all-vanadium redox flow batteries (VRFBs).

UV/Vis spectroscopy↗