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Computerized design parameters for realizable overdriven bimode varactor frequency doubler based on charge-voltage relationship at break point
The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave harmonic generation. Output power adequate to serve as a local oscillator source for SIS tunnel junctions has been demonstrated with whisker-contacted GaAs Schottky varactor multipliers in waveguide mounts up to about 800 GHz. In this paper, we present results for a tripler to 200 GHz using a new multiplier device, the single barrier varactor (SBV). This new varactor has a potential advantages such as stronger nonlinearities or special symmetry, which make it attractive for submillimeter wave frequency multiplication. The performance of a tripler using a SBV over a output frequency range from 186 to 207 GHz has been measured in a crossed waveguide mount. The theoretical performance of the device has been calculated using large signal analysis. A comparison of theoretical and measured results and a discussion of various losses in the mount and the varactor have also been presented.
The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave harmonic generation. Output power adequate to serve as a local oscillator source for SIS tunnel junctions has been demonstrated with whisker-contacted GaAs Schottky varactor multipliers in waveguide mounts up to about 800 GHz. In this paper, we present results for a tripler to 200 GHz using a new multiplier device, the single barrier varactor (SBV). This new varactor has potential advantages such as stronger nonlinearities or special symmetry, which make it attractive for submillimeter wave frequency multiplication. The performance of a tripler using a SBV over a output frequency range from 186 to 207 GHz has been measured in a crossed waveguide mount. The theoretical performance of the device has been calculated using large signal analysis. A comparison of theoretical and measured results and a discussion of various losses in the mount and the varactor have also been presented.
A tunable folded slot antenna that utilizes varactor diodes is presented. The antenna is fabricated on Rogers 6006 Duriod with a dielectric constant and thickness of 6.15 and 635 m, respectively. A copper cladding layer of 17 m defines the antenna on the top side (no ground on backside). The antenna is fed with a CPW 50 (Omega) feed line, has a center frequency of 3 GHz, and incorporates Micrometrics microwave hyper-abrupt 500MHV varactors to tune the resonant frequency. The varactors have a capacitance range of 2.52 pF at 0 V to 0.4 pF at 20 V; they are placed across the radiating slot of the antenna. The tunable 10 dB bandwidth of the 3 GHz antenna is 150 MHz. The varactors also reduce the size of the antenna by 30% by capacitively loading the resonating slot line. At the center frequency, 3 GHz, the antenna has a measured return loss of 44 dB and a gain of 1.6 dBi. Full-wave electromagnetic simulations using HFSS are presented that validate the measured data. Index Terms capacitive loading, Duriod, folded slot antenna, varactor.
The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder temperature, growth rate and III/V ratio in the synthesis of individual heterostructure regions, the thickness of AlAs inserts and barrier-layer quality are critical parameters to achieve the optimal characteristics of heterobarrier varactors. The proposed triple-barrier structures of heterobarrier varactors with thin InGaAs strained layers immediately adjacent to an InAlAs/AlAs/InAlAs heterobarrier, mismatched with respect to the InP lattice constant at an AlAs insert thickness of 2.5 nm, provides a leakage current density at the level of the best values for heterobarrier varactor structures with 12 barriers and an insert thickness of 3 nm.
In semiconductor devices the speed of electrons cannot exceed certain limits. This phenomenon will affect varactor multipliers as well as other high frequency devices where the RF current through the active part of the device is primarily displacement current. Hence, 'saturation' of the varactor output power is expected at some point. This phenomenon is discussed in some detail and shown to severely deteriorate the multiplier performance at higher frequencies. Single barrier varactors should have an advantage over GaAs Schottky diode varactors because they can be fabricated on InAs and stacked in a series array, allowing for lower current densities and higher power handling.
Schottky varactor frequency multipliers are used to generate local oscillator power at millimeter and submillimeter wavelengths. The equivalent circuit of the Schottky varactor contains a junction capacitance, a junction conductance, a series resistance and a model for electron velocity saturation. A millimeter wavelengths the equivalent circuits is affected by the edge effects, which are due to the small-area circular anode. The correction factors due to the edge effect for the junction capacitance and for the series resistance are available in the literature. In this work the electron velocity saturation is modeled by limiting the velocity of the transition front between the depleted and undepleted layer. By using this model the maximum current of the diode is given by the actual area of the transition front between depleted and undepleted layers, and is therefore related to the capacitance correction factor. The new model has been tested by analyzing a two diode balanced doubler for 160 GHz presented earlier in the literature. The agreement between the theoretical results and the measurements is excellent. The new diode model is useful in optimization of varactors for high millimeter and submillimeter wave frequencies.
In this paper a 2.4 GHz low profile (lambda/47) tunable dipole antenna is evaluated in the presence of a human core model (HCM) body phantom. The antenna uses a frequency selective surface (FSS) with interdigital barium strontium titanate (BST) varactor-tuned unit cells and its performance is compared to a similar low profile antenna that uses an FSS with semiconductor varactor diodes. The measured data of the antenna demonstrate tunability from 2.2 GHz to 2.55 GHz in free space and impedance match improvement in the presence of a HCM at different distances. This antenna has smaller size, lower cost and less weight compared to the semiconductor varactor diode counterpart.
In this presentation a 2.4 GHz low profile (lambda45) tunable dipole antenna is evaluated in the presence of a human core model (HCM) body phantom. The antenna uses a frequency selective surface (FSS) with interdigital barium strontium titanate (BST) varactor-tuned unit cells and its performance is compared to a similar low profile antenna that uses an FSS with semiconductor varactor diodes. The measured data of the antenna demonstrate tunability from 2.2 GHz to 2.55 GHz in free space and impedance match improvement in the presence of a HCM at different distances. This antenna has smaller size, lower cost and less weight compared to the semiconductor varactor diode counterpart.
We report on the effects of Ag impurities at interfaces of parallel-plate Pt/Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}/Pt thin film ferroelectric varactors. Ag impurities occur at the interfaces due to diffusion of Ag from colloidal silver paint used to attach the varactor samples with their back side to the plate heated at 600–750 °C during deposition of Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}. X-ray photoelectron spectroscopy and secondary ion mass spectrometry suggest that amount and distribution of Ag adsorbed at the interfaces depend strongly on the adsorbent surface layer. In particular, Ag preferentially accumulates on top of the Pt bottom electrode. The presence of Ag significantly reduces the barrier height between Pt and Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} leading to an increased leakage current density and, thus, to a severe degradation of the varactor performance.
Varactor diode multipliers are a critical part of many THz measurement systems. The power and efficiencies of these devices limit the available power for THz sources. Varactor operation is determined by the physics of the varactor device and a careful doping profile design is needed to optimize the performance. Higher doped devices are limited by junction breakdown and lower doped structures are limited by current saturation. Higher doped structures typically have higher efficiencies and lower doped structures typically have higher powers at the same operating frequency and impedance level. However, the device material properties are also a function of the operating temperature. Recent experimental evidence has shown that the power output of a multiplier can be improved by cooling the device. We have used a particle Monte Carlo simulation to investigate the temperature dependent velocity vs. electric field in GaAs. This information was then included in a nonlinear device circuit simulator to predict multiplier performance for various temperatures and device designs. This paper will describe the results of this analysis of temperature dependent multiplier operation.
In this paper a flexible low profile dipole antenna using a frequency selective surface (FSS) with interdigital barium strontium titanate (BST) varactor-tuned unit cells is presented. The varactor chips were placed only along one dimension of the FSS to avoid the use of vias and simplify the DC bias network. The antenna uses overlapping metallic plates that resemble fish scales as a ground plane to improve the flexibility of the multi-material stack structure. The measured data of the antenna demonstrate tunability from 2.42 GHz to 2.66 GHz and 1.3 dB gain drop when using overlapping metallic plates instead of continuous ground plane. The total antenna thickness is approximately lambda/24.
The quality of heteroboundaries and optimal conditions for epitaxial growth are critical parameters for obtaining low leakage currents of heterobarrier varactors in the InGaAs/InAlAs/AlAs material system. Grown by molecular-beam epitaxy, three-barrier heterobarrier varactor structures adjacent to InAlAs/AlAs/InAlAs barrier layers by additional mismatched InGaAs layers subjected to compressive stress show, under optimal epitaxy conditions, extremely low levels of leakage current density (not more than 0.06 A/cm{sup 2} at a voltage of 5 V and 85°C) with relatively thin AlAs inserts (with a thickness of 2 nm).
Stripline varactor harmonic multiplier uses a device for positioning the varactor diode with respect to the stripline circuit to obtain series resonance. The device also reduces detuning effects, due to thermal expansion, over a wide temperature range.
Development of varactor diode assembly overcomes parasitic reactances of conventional varactor packages. In specially constructed assembly very high idler-frequency to signal-frequency ratios are used to obtain low-noise operation over maximum bandwidth.
The development of GaAs Schottky barrier diodes for frequencies well into the submillimeter wavelength range is discussed. These devices have the highest cutoff frequencies yet obtained for varactor diodes and have produced sufficient output power to drive Schottky mixers at frequencies as high as 640 GHz. The fundamental design tradeoff between cutoff frequency and capacitance modulation is explored. As the doping density is increased and the anode diameter is reduced, the dynamic cutoff frequency increases, reaching a maximum of roughly 5 THz. It is concluded that the maximum output frequency from harmonic multipliers based on standard GaAs varactor diodes will be about 1 THz.
Whisker-contacted GaAs Schottky barrier varactor diodes are the most common high-frequency multiplier element in use today. They are inherently simple devices that have very high frequency response and have been used to supply local oscillator power for Schottky heterodyne receivers to frequencies approaching 700 GHz. This paper discusses the development of improved varactor diode technology for space based applications at millimeter and submillimeter wavelengths.
Theoretical work on Single Barrier Varactor (SBV) diodes, indicate that the efficiency for a multiplier has a maximum for a considerably smaller capacitance variation than previously thought. The theoretical calculations are performed, both with a simple theoretical model and a complete computer simulation using the method of harmonic balance. Modeling of the SBV is carried out in two steps. First, the semiconductor transport equations are solved simultaneously using a finite difference scheme in one dimension. Secondly, the calculated I-V, and C-V characteristics are input to a multiplier simulator which calculates the optimum impedances, and output powers at the frequencies of interest. Multiple barrier varactors can also be modeled in this way. Several examples on how to design the semiconductor layers to obtain certain characteristics are given. The calculated conversion efficiencies of the modeled structures, in a multiplier circuit, are also presented. Computer simulations for a case study of a 750 GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes. InAs and InGaAs SBV diodes have been fabricated and their current vs. voltage characteristics are presented. In the InAs diode, was the large bandgap semiconductor AlSb used as barrier. The InGaAs diode was grown lattice matched to an InP substrate with InAlAs as a barrier material. The current density is greatly reduced for these two material combinations, compared to that of GaAs/AlGaAs SBV diodes. GaAs based diodes can be biased to higher voltages than InAs diodes.