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DOE OSTI2025

Revisiting point defect thermodynamics in group IVB and VB transition metal carbides

We present a comprehensive re-examination of point defect thermodynamics in group IVB and VB transition metal carbides (TMCs) with the rocksalt structure using a combination of density functional theory (DFT) calculations and a statistical mechanical Wagner-Schottky model within the canonical ensemble. The most stable configurations of point defects were discovered using basin-hopping global optimization, driven by either a machine learning interatomic potential (MLIP) or DFT. A key finding is the identification of previously unreported dicarbon antisites—a C–C dimer occupying a metal site—as the structural (constitutional) defects on the carbon-rich side of stoichiometry in all group IVB and VB TMCs except TaC. Furthermore, dicarbon antisite-containing thermal defect complexes, such as quadruple and interbranch defects, can dominate in TMCs under specific stoichiometric and temperature conditions. In conclusion, by incorporating dicarbon antisites into the defect landscape, this work provides a revised understanding of the thermodynamics of point defects in TMCs.

Carbides↗

DOE OSTI2020

Materials Data on VB by Materials Project

VB1 crystallizes in the orthorhombic Cmcm space group. The structure is three-dimensional. V3+ is bonded in a 7-coordinate geometry to seven equivalent B3- atoms. There are a spread of V–B bond distances ranging from 2.24–2.33 Å. B3- is bonded in a 9-coordinate geometry to seven equivalent V3+ and two equivalent B3- atoms. Both B–B bond lengths are 1.79 Å.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Evaluating Materials Design Parameters of Hole-Selective Contacts for Silicon Heterojunction Solar Cells

Silicon heterojunction (SHJ) solar cell efficiencies are limited by parasitic absorption from the hydrogenated amorphous silicon (a-Si:H) front contact, but this may be mitigated by selecting an alternative carrier selective contact material with a wider band gap. When choosing such a material as the hole-selective contact (“p-layer”), the alignment of the material's valence band edge energy (E VB ) with that of crystalline silicon (c-Si) is an important criterion, but several other material parameters can also influence the band bending at the contact interface. Here, we simulate an (n)c-Si/(i)a-Si:H/p-layer interface to explore the influence of six materials parameters in a variable p-layer on the SHJ performance. We find a strong influence on the fill factor (FF) from thickness, doping, and E VB , and on V OC from the interfacial defect density; notably, optimal E VB is ~ 0.1 eV higher than the valence band edge energy of a-Si:H. Multiparameter sensitivity analyses demonstrate how performance is simultaneously influenced by E VB and doping; thus, both parameters should be optimized alongside one another. To assess the influence of these parameters experimentally, we grow p-type NiO x as a test-case p-layer, which shows that FFs decrease with the oxygen content likely from the increased misalignment of E VB . Although modest efficiencies are achieved experimentally (>7%), what is important is that our model simulates performance trends. With these results, we apply a materials discovery pipeline to suggest new materials (e.g., ZnTe and BeTe) to try as p-layers in the SHJ. This combination of simulations, experiments, and materials discovery informs a better understanding of contact selection in SHJ cells.

14 SOLAR ENERGY↗

DOE OSTI2023

Probing Boron Vacancy Complexes in h-BN Semi-Bulk Crystals Synthesized by Hydride Vapor Phase Epitaxy

Hexagonal BN (h-BN) has emerged as an important ultrawide bandgap (UWBG) semiconductor (Eg~6 eV). The crystal growth technologies for producing semi-bulk crystals/epilayers in large wafer sizes and understanding of defect properties lag decades behind conventional III-nitride wide bandgap (WBG) semiconductors. Here we report probing of boron vacancy (VB)-related defects in freestanding h-BN semi-bulk wafers synthesized by hydride vapor phase epitaxy (HVPE). A photocurrent excitation spectroscopy (PES) was designed to monitor the transport of photoexcited holes from deep-level acceptors. A dominant transition line at 1.66 eV with a side band near 1.62 eV has been directly observed, which matches well with the calculated energy levels of 1.65 for the VB-H deep acceptor in h-BN. The identification of VB complexes via PES measurement was further corroborated by the temperature-dependent dark resistivity and secondary ion mass spectrometry measurements. The results presented here suggested that it is necessary to focus on the optimization of V/III ratio during HVPE growth to minimize the generation of VB-related defects and to improve the overall material quality of h-BN semi-bulk crystals. The work also provided a better understanding of how VB complexes behave and affect the electronic and optical properties of h-BN.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Dependence of Solar Wind Proton Temperature on the Polarization Properties of Alfvénic Fluctuations at Ion-kinetic Scales

In this work, we use fluctuating magnetic helicity to investigate the polarization properties of Alfvénic fluctuations at ion-kinetic scales in the solar wind as a function of β p , the ratio of proton thermal pressure to magnetic pressure, and θ vB , the angle between the proton flow and local mean magnetic field, B 0 . Using almost 15 yr of Wind observations, we separate the contributions to helicity from fluctuations with wavevectors, k, quasi-parallel and oblique to B 0 , finding that the helicity of Alfvénic fluctuations is consistent with predictions from linear Vlasov theory. This result suggests that the nonlinear turbulent fluctuations at these scales share at least some polarization properties with Alfvén waves. Furthermore, we also investigate the dependence of proton temperature in the β p –θ vB plane to probe for possible signatures of turbulent dissipation, finding that it correlates with θ vB . The proton temperature parallel to B 0 is higher in the parameter space where we measure the helicity of right-handed Alfvénic fluctuations, and the temperature perpendicular to B 0 is higher where we measure left-handed fluctuations. This finding is inconsistent with the general assumption that by sampling different θ vB in the solar wind we can analyze the dependence of the turbulence distribution on θ kB , the angle between k and B 0 . After ruling out both instrumental and expansion effects, we conclude that our results provide new evidence for the importance of local kinetic processes that depend on θ vB in determining proton temperature in the solar wind.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2025

Evidence for valence-bond pairing in a one-dimensional two-orbital system

Valence bond (VB) states as the formation mechanism of Cooper pairs, eventually leading to high-temperature superconductivity, remain a controversial topic. Although various VB-like states find variational relevance in the description of specific spin models and quantum spin liquids, in the realm of many-body fermionic Hamiltonians, the evidence for such states as ground-state wave functions remains elusive, challenging the valence-bond pairing mechanism. Here, we present evidence of a VB ground state with pairing tendencies, particularly at finite doping. Here, we achieved this for the generic two-orbital Hubbard model in low dimension, where the VB states can be associated with the presence of the topological order manifested by edge states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Stochastic Virtual Battery Modeling of Uncertain Electrical Loads using Variational Autoencoder

Effective utilization of flexible loads for grid services, while satisfying end-user preferences and constraints, requires an accurate estimation of the aggregated predictive flexibility offered by the electrical loads. Recently, there have been efforts to quantify the predictive flexibility of thermostatic loads (e.g. residential air-conditioners, electric water-heaters) using the notion of virtual battery (VB), whose state evolution is governed by a first order dynamics including self-dissipation rate, and power and energy capacities. Identifying the VB model parameters for a collection of thermostatic loads, however, is challenging primarily due to uncertainties and lack of information regarding the end-user behavior, underlying device models and parameters. In this paper, we propose a \textit{variational autoencoder}-based deep learning algorithm to identify the parameters of the VB model. Using available sensors and meters data, the proposed algorithm generates not only point estimates of the VB parameters, but also confidence intervals around those values. Effectiveness of the proposed frameworks is demonstrated on a collection of electric water-heater loads, whose operation is driven by uncertain water usage profiles.

virtual battery, deep learning algorithms↗

DOE OSTI2020

Structure and function of bacteriophage CBA120 ORF211 (TSP2), the determinant of phage specificity towards E. coli O157:H7

The genome of Escherichia coli O157:H7 bacteriophage vB_EcoM_CBA120 encodes four distinct tailspike proteins (TSPs). The four TSPs, TSP1-4, attach to the phage baseplate forming a branched structure. We report the 1.9 Å resolution crystal structure of TSP2 (ORF211), the TSP that confers phage specificity towards E. coli O157:H7. The structure shows that the N-terminal 168 residues involved in TSPs complex assembly are disordered in the absence of partner proteins. The ensuing head domain contains only the first of two fold modules seen in other phage vB_EcoM_CBA120 TSPs. The catalytic site resides in a cleft at the interface between adjacent trimer subunits, where Asp506, Glu568, and Asp571 are located in close proximity. Replacement of Asp506 and Asp571 for alanine residues abolishes enzyme activity, thus identifying the acid/base catalytic machinery. However, activity remains intact when Asp506 and Asp571 are mutated into asparagine residues. Analysis of additional site-directed mutants in the background of the D506N:D571N mutant suggests engagement of an alternative catalytic apparatus comprising Glu568 and Tyr623. Finally, we demonstrate the catalytic role of two interacting glutamate residues of TSP1, located in a cleft between two trimer subunits, Glu456 and Glu483, underscoring the diversity of the catalytic apparatus employed by phage vB_EcoM_CBA120 TSPs.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2022

Atomic-Site-Specific Surface Valence-Band Structure from X-Ray Standing-Wave Excited Photoemission

X-ray standing-wave (XSW) excited photoelectron emission was used to measure the site-specific valence band (VB) for ½ monolayer (ML) Pt grown on a SrTiO 3 (001) surface. The XSW induced modulations in the core level (CL), and VB photoemission from the surface and substrate atoms were monitored for three ℎ⁡kl substrate Bragg reflections. The XSW CL analysis shows the Pt to have a face-centered-cubic-like cube-on-cube epitaxy with the substrate. The XSW VB information compares well to a density functional theory calculated projected density of states from the surface and substrate atoms. Altogether, this Letter represents a novel method for determining the contribution to the density of states by valence electrons from specific atomic surface sites.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2020

A volumetric framework for quantum computer benchmarks

We propose a very large family of benchmarks for probing the performance of quantum computers. We call them volumetric benchmarks (VBs) because they generalize IBM's benchmark for measuring quantum volume \cite{Cross18}. The quantum volume benchmark defines a family of square circuits whose depth d and width w are the same. A volumetric benchmark defines a family of rectangular quantum circuits, for which d and w are uncoupled to allow the study of time/space performance trade-offs. Each VB defines a mapping from circuit shapes — ( w , d ) pairs — to test suites C ( w , d ) . A test suite is an ensemble of test circuits that share a common structure. The test suite C for a given circuit shape may be a single circuit C , a specific list of circuits { C 1 … C N } that must all be run, or a large set of possible circuits equipped with a distribution P r ( C ) . The circuits in a given VB share a structure, which is limited only by designers' creativity. We list some known benchmarks, and other circuit families, that fit into the VB framework: several families of random circuits, periodic circuits, and algorithm-inspired circuits. The last ingredient defining a benchmark is a success criterion that defines when a processor is judged to have ``passed'' a given test circuit. We discuss several options. Benchmark data can be analyzed in many ways to extract many properties, but we propose a simple, universal graphical summary of results that illustrates the Pareto frontier of the d vs w trade-off for the processor being benchmarked.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2026

Photoelectron Spectroscopic Determination of the Interfacial Energetics of Metal Oxide Protection Layers on p-InP Photocathodes

The interfacial energetics between p-type InP and a series of metal oxides, including TiO 2 , Nb 2 O 5 , Ta 2 O 5 , and HfO 2 , were evaluated using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and optical absorption spectroscopy. The energy of the conduction-band minimum ( E cb ) of TiO 2 and Nb 2 O 5 was more negative (i.e., further from the vacuum level) than the conduction-band minimum at the surface of InP ( E cb,s ), whereas E cb for Ta 2 O 5 and HfO 2 was more positive than E cb,s for InP. The data are consistent with the electrochemical behavior of p-InP coated with various metal oxide candidate protection layers, with TiO 2 and Nb 2 O 5 facilitating interfacial transfer of photogenerated minority-carrier electrons in p-InP photocathodes, and Ta 2 O 5 and HfO 2 blocking photogenerated electrons in p-InP from readily transferring across the oxide-coated photocathodes. The energy of the valence-band maximum ( E vb ) for all of the oxides was much more negative than E vb,s for InP, consistent with observations that these protection layers effectively block hole transport and consequently suppress oxidative degradation of the underlying p-InP photocathodes.

63 RADIATION, THERMAL, AND OTHER ENVIRON. POLLUTAN↗

DOE OSTI2020

Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets

Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, resulting in complex band structures with Weyl crossings and unique spin textures. Detailed time-resolved polarized reflectance spectroscopy is used to investigate its band structure and carrier dynamics. The polarized transient spectra reveal optical transitions between the uppermost spin-split H4 and H5 and the degenerate H6 valence bands (VB) and the lowest degenerate H6 conduction band (CB) as well as a higher energy transition at the Lpoint. Surprisingly, the degeneracy of the H6 CB (a proposed Weyl node) is lifted and the spin-split VB gap is reduced upon photoexcitation before relaxing to equilibrium as the carriers decay. Using ab initio density functional theory (DFT) calculations, we conclude that the dynamic band structure is caused by a photoinduced shear strain in the Te film that breaks the screw symmetry of the crystal. The band-edge anisotropy is also reflected in the hot carrier decay rate, which is a factor of two slower along the c-axis than perpendicular to it. The majority of photoexcited carriers near the band-edge are seen to recombine within 30 ps while higher lying transitions observed near 1.2 eV appear to have substantially longer lifetimes, potentially due to contributions of intervalley processes in the recombination rate. These new findings shed light on the strong correlation between photoinduced carriers and electronic structure in anisotropic crystals, which opens a potential pathway for designing novel Te-based devices that take advantage of the topological structures as well as strong spin-related properties.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

Report on progress in physics: observation of the Breit–Wheeler process and vacuum birefringence in heavy-ion collisions

This report reviews the effort over several decades to observe the linear Breit–Wheeler process ($\gamma\gamma \rightarrow e^+e^-$) and vacuum birefringence (VB) in high-energy particle and heavy-ion collider experiment. This report, motivated by the STAR collaboration's recent observations, attempts to summarize the key issues related to the interpretation of polarized $\gamma\gamma \rightarrow l^+l^-$ measurements in high-energy experiments. To that end, we start by reviewing the historical context and essential theoretical developments, before focusing on the decades of progress made in high-energy collider experiments. Special attention is given to the evolution in experimental approaches in response to various challenges, to the demanding detector capabilities required to unambiguously identify the linear Breit–Wheeler process, and to the connections with VB. Finally, we close the report with a discussion, followed by a look at near-future opportunities for utilizing these discoveries and for testing quantum electrodynamics in previously unexplored regimes.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2021

Electronic properties of epitaxial La 1- x Sr x RhO 3 thin films

Here, we report on the synthesis and electronic properties of epitaxial perovskite La 1- x Sr x RhO 3 thin films. Thin films with a Sr content ranging from $\textit{x}$ = 0 to 0.5 have been grown using molecular beam epitaxy. Transport and x-ray photoemission spectroscopy data reveal an insulator-metal-insulator transition, accompanied by a $\textit{p-}$ to $\textit{n}-$ type carrier change observed in Hall measurements. Combined with theoretical calculations, we find that the addition of Sr does not directly dope carriers into the conduction band, but rather induces localized Rh 4$\textit{d}$ states within the LaRhO 3 band gap. The bandwidth of the impurity band increases with Sr content, eventually causing the valence band (VB) and the localized Rh 4$\textit{d}$ band to overlap, which explains the first insulator-to-metal transition occurring at $\textit{x}$ = 0.35. For Sr content $\textit{x}$ > 0.4, possible cation ordering results in an increase of the gap between the VB and the Rh 4$\textit{d}$ band, leading to the second metal-to-insulator transition. We map out the electronic phase diagram of the Sr-doped LaRhO 3 system and suggest strategies to engineer the electronic states in rhodate systems via delocalizing the Rh 3+ states.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Electron Glass Phase with Resilient Zhang-Rice Singlets in LiCu 3 ⁢O 3

LiCu 3 ⁢O 3 is an antiferromagnetic mixed valence cuprate where trilayers of edge-sharing Cu(II)O (3⁢d 9 ) are sandwiched in between planes of Cu(I) (3⁢d 10 ) ions, with Li stochastically substituting Cu(II). Angle-resolved photoemission spectroscopy (ARPES) and density functional theory reveal two insulating electronic subsystems that are segregated in spite of sharing common oxygen atoms: a Cu d z 2 /O p z derived valence band (VB) dispersing on the Cu(I) plane, and a Cu 3⁢d x 2 -y 2 /O 2⁢p x,y derived Zhang-Rice singlet (ZRS) band dispersing on the Cu(II)O planes. First-principle analysis shows the Li substitution to stabilize the insulating ground state, but only if antiferromagnetic correlations are present. Li further induces substitutional disorder and a 2D electron glass behavior in charge transport, reflected in a large 530 meV Coulomb gap and a linear suppression of VB spectral weight at E F that is observed by ARPES. Surprisingly, the disorder leaves the Cu(II)-derived ZRS largely unaffected. Finally, this indicates a local segregation of Li and Cu atoms onto the two separate corner-sharing Cu⁡(II)⁢O 2 sub-lattices of the edge-sharing Cu(II)O planes, and highlights the ubiquitous resilience of the entangled two hole ZRS entity against impurity scattering.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Operating a commercial building HVAC load as a virtual battery through airflow control

Virtual battery (VB) is an innovative method to model flexibility of building loads and effectively coordinate them with other resources at a system level. Unlike a real battery with a dedicated power conversion system for charging control, methods are required for operating building loads to deviate from the baseline to respond to grid signals. This paper presents a VB control for a commercial heating, ventilation, and air conditioning (HVAC) system to follow the desired power consumption in real-time by adjusting zonal airflow rates. The proposed method consists of two parts. At the system level, a mixed feedforward and feedback control is used to estimate the desired total airflow rate. At the zone level, two priority-based algorithms are then proposed to distribute the total airflow rate to individual zones. In particular, a zonal airflow limit estimation method is proposed using machine-learning techniques, in contrast to physics-based thermal models in existing studies, to more accurately capture zonal thermal dynamics and improve temperature control performance. An office building on the Pacific Northwest National Laboratory campus is implemented in EnergyPlus, and used to illustrate and validate the proposed control.

Wang, Jiyu↗

DOE OSTI2020

Method and apparatus for evaluating superconducting tunnel junction detector noise versus bias voltage

A technique for characterizing the noise behavior of a superconducting tunnel junction (STJ) detector as a function of its applied bias voltage Vb by stepping the STJ's bias voltage across a predetermined range and, at each applied bias, making multiple measurements of the detector's current, calculating their mean and their standard deviation from their mean, and using this standard deviation as a measure of the STJ detector's noise at that applied bias. Because the method is readily executed under computer control, it is particularly useful when large numbers of STJ detectors require biasing, as in STJ detector arrays In a preferred implementation, the STJ is measured under computer control by attaching it to a digital spectrometer comprising a digital x-ray processor (DXP) coupled to a preamplifier that can set the STJ's bias voltage Vb using a digital-to-analog converter (DAC) controlled by the DXP.

Warburton, William K.↗

DOE OSTI2023

The Challenging World of Simple Inorganic Rings: Revisiting Roesky's Ketone and Roesky's Sulfoxide

Abstract The surprising differences between the experimental solid‐state and calculated gas‐phase structures of 5‐oxo‐1,3,2,4‐dithiadiazole (Roesky's ketone,1) and 1‐oxo‐1,2,4,3,5‐trithiadiazole (Roesky's sulfoxide,2), identified and studied in a series of papers published between 2004 and 2010 but then never satisfactorily explained, have been revisited, making use of the more advanced computational possibilities currently available. The previous calculations’ considerable overestimations of the C−S and S−S bond lengths in1and2, respectively, have been partly explained based on the results of periodic calculations and the application of Valence Bond (VB) Theory. In the case of1, the crystal environment appears to stabilize a structure with a highly polarized C=O bond, which features a C−S bond with considerable double‐bond character – an effect which does not exist for the isolated molecule – explaining the much shorter bond in the solid state. For2, a similar conclusion can be drawn for the S−S distance. For both compounds, though, packing effects are not the sole source of the differences: the inability of Density Functional Theory (DFT) to properly deal with the electronic structures of these apparently simple main‐group systems remains a contributing factor.

Chemistry↗