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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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15 records

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DOE OSTI2024

Self-aligned fabrication of vertical, fin-based structures

Modern power devices rely on complex, three-dimensional, vertical designs to increase their power density, ease their thermal management, and improve their reliability. However, fabrication techniques have historically relied on 2D processes for patterning lateral features. This work presents a new technology that uses multiple steps of angled depositions to fabricate self-aligned vertical, fin-based devices that avoid fundamental lithography resolution and alignment limitations. The fabrication flows of two devices, the self-aligned vertical finFET and the high-κ dielectric fin diode, are presented to demonstrate how angled depositions can readily achieve transistors with submicrometer, vertical gates in a source-first process and also create high-aspect ratio GaN fins with a record 70:1 aspect ratio.

Perozek, Joshua (ORCID:0000000251519131)↗

DOE OSTI2023

Simulation of gallium nitride vertical fin-shaped field effect transistor for use as thermal neutron detector

Through the use of a radiation detection system simulation framework, a gallium nitride vertical fin-shaped field effect transistor (FinFET) was studied for output response when utilized as a thermal neutron detector. The FinFET was assumed to had been backfilled with boron carbide, reactive to thermal neutrons. The GaN FinFET was modeled with radiation transport from MCNP, and the electronic transport from COMSOL Multiphysics. Fabricated FinFET devices (not neutron reactive) were tested to aid in the tuning of the COMSOL FinFET model. Through time-depenent studies, the drain current response pulse to simulated ionization due to single events lead to building of a database of device responses to radiation. By integrating the current pulses over time, the induced charge was calculated. Using the results of the radiation transport PTRAC file in combination with the induced charge database, an integrated charge spectrum was calculated.

Davidson, Bryce L.↗

DOE OSTI2022

Condensers and electronic assemblies

Provided is a condenser for use in an electronic assembly. The condenser includes a first vertical wall extending in a vertical direction, the first vertical wall defining a first plurality of vertical condensation channels within the first vertical wall, a second vertical wall extending in the vertical direction, the second vertical wall defining a second plurality of vertical condensation channels within the second vertical wall, and a first plurality of fins extending in the vertical direction, each of the first plurality of fins connected to the first vertical wall, the second vertical wall or both the first vertical wall and the second vertical wall.

Cousineau, Emily↗

DOE OSTI2023

Condensers and electronic assemblies

Cousineau, Emily↗

DOE OSTI2026

AlGaN/GaN Core-Shell Nanofin Diodes on Si Substrates for Vertical GaN Electronics

We demonstrate plasma-assisted MBE selective-area growth of GaN/AlGaN core-shell structures on Si(111) as a path to vertical GaN devices. The selective-area growth enables the full vertical and uniform core-shell fin structures to be realized in a continuous growth without breaking vacuum. TEM images and EDS mapping of the core-shell structures show well-aligned crystal structure and sharp heterointerfaces. Dislocation filtering was observed in STEM imaging of the fin structure. P-N junction diodes fabricated with GaN/AlGaN core-shell structures reveal ideality factors as low as 1.5, and the reverse-bias leakage is consistent with trap-assisted space-charge-limited conduction. While practical challenges exist, including material-related leakage, growth-related challenges and optimization, this demonstration of p-n junction by this method may provide a path to vertical Superjunction device concepts in GaN and related materials.

Xiong, Juncheng [University of Notre Dame, IN (Uni↗

DOE OSTI2022

Fractal-Fin, Dimpled Solar Heat Collector with Solar Glaze

Exterior solar glaze was added to a 3 foot x 3 foot x 3 foot aluminum solar collector that had six triangular dimpled fins for enhanced heat transfer. The interior vertical wall on the south side was also dimpled. The solar glaze was added to compare its solar collection performance with unglazed solar collector experiments conducted at Sandia in 2021. The east, west, front, and top sides of the solar collector were encased with solar glaze glass. Because the solar incident heat on the north and bottom sides was minimal, they were insulated to retain the heat that was collected by the other four sides. The advantages of the solar glaze include the entrapment of more solar heat, as well as insulation from the wind. The disadvantages are that it increases the cost of the solar collector and has fragile structural properties when compared to the aluminum walls. Nevertheless, prior to conducting experiments with the glazed solar collector, it was not clear if the benefits outweighed the disadvantages. These issues are addressed herein, with the conclusion that the additional amount of heat collected by the glaze justifies the additional cost. The solar collector glaze design, experimental data, and costs and benefits are documented in this report.

14 SOLAR ENERGY↗

DOE OSTI2026

Metal additively manufactured wavy fin cold-plate architecture for improved thermal-hydraulic performance

Rapid growth in artificial intelligence and data center workloads demands high-performance liquid cooling to manage increasing chip power. This study presents two metal-additive-manufactured cold plates with sinusoidal fins, constant-amplitude wavy fins and linearly variable-amplitude wavy fins and compares them against metal-additive-manufactured straight fins using experiments conducted at 1 kW heat dissipation as well as high-fidelity 3D conjugate computational fluid dynamic simulations. The cold plates were printed in AlSi10Mg material and underwent design using a Python-automated workflow prior to manufacture and testing. The experiments show that wavy fins reduce the normalized thermal resistance by 35 to 45 % at water flow rates from 1 to 4 LPM. At a fixed 20 kPa pressure drop, the variable-waviness design lowered peak surface temperature by 9 °C and thermal resistance by 51 %, while edge-channel maldistribution in the constant wavy fin design limited gains. A thermal resistance breakdown revealed that 55–63 % of the total thermal resistance in wavy designs comes from base heat conduction, 27–33 % from fin heat conduction, and 9–13 % from fin heat convection, indicating the need to address conduction bottlenecks. Parametric sweeps identify a 3 mm fin pitch as optimal, and that horizontal inlet/outlet manifolds further reduce pressure drop by 30–60 % and thermal resistance by 9–16 % relative to vertical inlet-outlet manifolds. The results yield comprehensive guidelines for fin geometry, manifold alignment, material selection and additive-manufacturing constraints to realize high-performance liquid-cooled cold plates for power-dense electronics.

3d printing↗

DOE OSTI2023

Selective area doping of GaN toward high-power applications

Abstract Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors, junction termination extensions, junction barrier Schottky diodes, junction field-effect transistors (JFETs), vertical-channel JFETs, U-shaped metal–oxide–semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.

Physics↗

DOE OSTI2024

Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage

The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.

Porter, Matthew↗

DOE OSTI2022

Experimental Investigation of the Heat Transfer between Finned Tubes and a Bubbling Fluidized Bed with Horizontal Sand Mass Flow

The sandTES technology utilizes a fluidized bed counter current heat exchanger for thermal energy storage applications. Its main feature is an imposed horizontal flow of sand (SiO2) particles fluidized by a vertical air flow across a heat exchanger consisting of several horizontal rows of tubes. Past international research on heat transfer in dense fluidized beds has focused on stationary (stirred tank) systems, and there is little to no information available on the impact of longitudinal or helical fins. Previous pilot plant scale experiments at TU Wien led to the conclusion that the currently available correlations for predicting the heat transfer coefficient between the tube surface and the surrounding fluidized bed are insufficient for the horizontal sand flow imposed by the sandTES technology. Therefore, several smaller test rigs were designed in this study to investigate the influence of different tube arrangements and flow conditions on the external convective heat transfer coefficient and possible improvements by using finned tubes. It could be shown that helically finned tubes in a transversal arrangement, where the horizontal sand flow is perpendicular to the tube axes, allows an increase in the heat transfer coefficient per tube length (i.e., the virtual heat transfer coefficient) by a factor of 3.5 to about 1250 W/m2K at ambient temperature. Based on the literature, this heat transfer coefficient is expected to increase at higher temperatures. The new design criteria allow the design of compact, low-cost heat exchangers for thermal energy storage applications, in particular electro-thermal energy storage.

25 ENERGY STORAGE↗

DOE OSTI2022

GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)

Fabricating a vertical-channel junction field-effect transistor includes forming an unintentionally doped GaN layer on a bulk GaN layer by metalorganic chemical vapor deposition, forming a Cr/SiO 2 hard mask on the unintentionally doped GaN layer, patterning a fin by electron beam lithography, defining the Cr and SiO 2 hard masks by reactive ion etching, improving a regrowth surface with inductively coupled plasma etching, removing hard mask residuals, regrowing a p-GaN layer, selectively etching the p-GaN layer, forming gate electrodes by electron beam evaporation, and forming source and drain electrodes by electron beam evaporation. The resulting vertical-channel junction field-effect transistor includes a doped GaN layer, an unintentionally doped GaN layer on the doped GaN layer, and a p-GaN regrowth layer on the unintentionally doped GaN layer. Portions of the p-GaN regrowth layer are separated by a vertical channel of the unintentionally doped GaN layer.

Zhao, Yuji↗

DOE OSTI2024

Optimization and Experimental Validation of Annular Finned PCM-HX for a Domestic Hot Water Heater Application

The load profile for domestic water heating is time-dependent and can result in high energy demand during peak operating times. Shifting this peak load can have significant environmental and economic impacts. Phase change material (PCM)-based thermal energy storage (TES) is a potentially useful technology for peak load shifting in domestic hot water (DHW) applications thanks to its high latent heat and energy density. In this study, an annular finned-tube PCM-HX design concept was optimized for a load-shifting TES unit to meet the Department of Energy standard for a medium-usage DHW heater using a resistance-capacitance model (RCM) integrated with a Multi-Objective Genetic Algorithm. The optimized design comprised 70 identical annular finned-tube PCM-HX units connected in parallel and utilizing RT62HC as the PCM. A single PCM-HX unit was prototyped and tested in a vertically oriented setup with upward heat transfer fluid (HTF) flow. The hot water supply time was defined based on a cutoff temperature of 51.7°C. The as-designed mass flow rate (1.5 g/s) was tested to assess the performance of the prototyped PCM-HX unit for RCM validation. For the experimental investigation, RTD sensor bundles measured HTF temperature at the PCM-HX inlet and outlet, and a Coriolis flow meter accurately measured the HTF mass flow rate. The simulated discharging power underpredicted the experimental result by about 12%, and the simulated hot water supply time underpredicted the experimental result by approximately 13% for the as-designed mass flow rate (1.5 g/s). The average deviation of the hot water supply temperature between the experimental and RCM results during the complete PCM solidification process was 1.3 K for the as-designed mass flow rate. The overall good agreement between the experimental and RCM results provides confidence that computationally efficient models such as RCM can be utilized for design optimization of PCM-HXs.

42 ENGINEERING↗

DOE OSTI2024

Optical Flow Diagnostics of Counter Fluidization of Gravity-Driven Moving Packed Bed for a CSP Receiver Section Featuring Staggered Array of Cylindrical Pins

Particle fluidized beds have the potential to improve the efficiency of heat transfer in concentrated solar receiver furnace for use in next generation concentrated solar power (CSP) plants. This study presents an experimental investigation on the flow characterization of vertically downward moving packed bed with counter fluidization through an array of jets. To control the bubble size and its distribution in the bubbling fluidized bed, an array of cylindrical pin fins was arranged uniformly across the test article. The flow visualization was performed on the surface of transparent glass coated with electrically conductive materials for electrostatic dissipation purposes. The image acquisition was carried out via high-speed camera at a frequency of ~ 1kHz. The acquired images were analyzed in pairs with the help of a modern optical flow algorithm capable of calculating the movement of dense particle flow in the fluidized bed by tracking the light intensity of each predefined window of the frames. A comparison of fluidized beds with plane and pin-finned channels revealed distinct bubble behavior. Pin-finned channels were found to produce a larger number of small-sized bubbles, while plane channels generated fewer but larger bubbles at any given instant. The presence of pin fins was observed to reduce bubble size by preventing bubble merging and splitting larger bubbles when they encountered a pin.

concentrating solar power↗

DOE OSTI2023

β -Ga 2 O 3 trench Schottky diodes by low-damage Ga-atomic beam etching

β-Ga 2 O 3 trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique with excellent field strength and power device figure of merit are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at a breakdown voltage of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in β-Ga 2 O 3 vertical power devices.

42 ENGINEERING↗

DOE OSTI2025

Low-cost and high-performance heat exchangers for CSP

This project aimed to design and manufacture a low-cost and high-performance, particle–to–sCO 2 heat exchanger (HX) for Concentrated Solar Power (CSP) using additive manufacturing (AM). Three enabling technologies will be integrated to achieve the targeted cost and performance. The first technology is the extreme high‐speed laser materials deposition (LMD) AM process known by its German acronym EHLA that was invented at the Fraunhofer Institute for Laser Technology. The EHLA process utilizes a specially designed powder-feeding nozzle that enables a laser to melt the powder particles above the melt pool, in contrast to the conventional LMD process where the powders are melted inside the melt pool. EHLA enables much faster deposition rate than conventional LMD without the need to wait for the powders to melt. The second technology is an innovative double-helical HX geometry that can be easily fabricated using the EHLA process by rotating a rod at a high-speed to take advantage of the high EHLA deposition rate. The double-helical fins separate the hot region (the hot particle side) and the cold region (the sCO 2 side) and provide large heat transfer surface area without a large pressure drop on the sCO 2 side. The particle side will have a larger gap to facilitate the particle flow. The outer rims of the double helixes can be sealed off using the same AM process. After sealing-off, additional double helixes can be built radially on top of the first set to improve HX performance. The HX can be installed vertically for gravity-driven flow of the hot particles if necessary. The third technology is a low-cost high-temperature alumina-forming austenitic (AFA) steel TMA-6350 that has creep and oxidation resistance up to 1100 °C. These technologies together will enable high-performance and low-cost HXs for particle–to–sCO 2 for CSP.

14 SOLAR ENERGY↗