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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2010

Methods and Results for a Global Precipitation Measurement (GPM) Validation Network Prototype

As one component of a ground validation system to meet requirements for the upcoming Global Precipitation Measurement (GPM) mission, a quasi-operational prototype a system to compare satellite- and ground-based radar measurements has been developed. This prototype, the GPM Validation Network (VN), acquires data from the Precipitation Radar (PR) on the Tropical Rainfall Measuring Mission (TRMM) satellite and from ground radar (GR) networks in the continental U.S. and participating international sites. PR data serve as a surrogate for similar observations from the Dual-frequency Precipitation Radar (DPR) to be present on GPM. Primary goals of the VN prototype are to understand and characterize the variability and bias of precipitation retrievals between the PR and GR in various precipitation regimes at large scales, and to improve precipitation retrieval algorithms for the GPM instruments. The current VN capabilities concentrate on comparisons of the base reflectivity observations between the PR and GR, and include support for rain rate comparisons. The VN algorithm resamples PR and GR reflectivity and other 2-D and 3-D data fields to irregular common volumes defined by the geometric intersection of the instrument observations, and performs statistical comparisons of PR and GR reflectivity and estimated rain rates. Algorithmic biases and uncertainties introduced by traditional data analysis techniques are minimized by not performing interpolation or extrapolation of data to a fixed grid. The core VN dataset consists of WSR-88D GR data and matching PR orbit subset data covering 21 sites in the southeastern U. S., from August, 2006 to the present. On average, about 3.5 overpass events per month for these WSR-88D sites meet VN criteria for significant precipitation, and have matching PR and GR data available. This large statistical sample has allowed the relative calibration accuracy and stability of the individual ground radars, and the quality of the PR reflectivity attenuation correction in convective and stratiform precipitation to be evaluated. We will present results of PR-GR reflectivity and rain rate bias comparisons for each OR site, and for different rain types, for the full data set and as time series. The capabilities of the statistical analysis and vertical cross section tools for display and analysis of individual site overpass event data will be described, and examples of the tools' outputs will be shown.

Morris, Kenneth R.↗
NASA NTRS2009

Complementary Paired G4FETs as Voltage-Controlled NDR Device

It is possible to synthesize a voltage-controlled negative-differential-resistance (NDR) device or circuit by use of a pair of complementary G4FETs (four-gate field-effect transistors). [For more information about G4FETs, please see the immediately preceding article]. As shown in Figure 1, the present voltage-controlled NDR device or circuit is an updated version of a prior NDR device or circuit, known as a lambda diode, that contains a pair of complementary junction field-effect transistors (JFETs). (The lambda diode is so named because its current-versus- voltage plot bears some resemblance to an upper-case lambda.) The present version can be derived from the prior version by substituting G4FETs for the JFETs and connecting both JFET gates of each G4FET together. The front gate terminals of the G4FETs constitute additional terminals (that is, terminals not available in the older JFET version) to which one can apply control voltages VN and VP. Circuits in which NDR devices have been used include (1) Schmitt triggers and (2) oscillators containing inductance/ capacitance (LC) resonant circuits. Figure 2 depicts such circuits containing G4FET NDR devices like that of Figure 1. In the Schmitt trigger shown here, the G4FET NDR is loaded with an ordinary inversion-mode, p-channel, metal oxide/semiconductor field-effect transistor (inversion-mode PMOSFET), the VN terminal of the G4FET NDR device is used as an input terminal, and the input terminals of the PMOSFET and the G4FET NDR device are connected. VP can be used as an extra control voltage (that is, a control voltage not available in a typical prior Schmitt trigger) for adjusting the pinch-off voltage of the p-channel G4FET and thereby adjusting the trigger-voltage window. In the oscillator, a G4FET NDR device is loaded with a conventional LC tank circuit. As in other LC NDR oscillators, oscillation occurs because the NDR counteracts the resistance in the tank circuit. The advantage of this G4FET-NDR LC oscillator over a conventional LC NDR oscillator is that one can apply a time-varying signal to one of the extra control input terminals (VN or VP) to modulate the conductance of the NDR device and thereby amplitude-modulate the output signal.

Mojarradi, Mohammad↗
NASA NTRS2003

Precise Heater Controller with rf-Biased Josephson Junctions

Paramagnetic susceptibility thermometers used in fundamental physics experiments are capable of measuring temperature changes with a precision of a part in 2 x 10(exp 10). However, heater controllers are only able to control open-loop power dissipation to about a part in 10(exp 5). We used an array of rf-biased Josephson junctions to precisely control the electrical power dissipation in a heater resistor mounted on a thermally isolated cryogenic platform. Theoretically, this method is capable of controlling the electrical power dissipation to better than a part in 10(exp 12). However, this level has not yet been demonstrated experimentally. The experiment consists of a liquid helium cell that also functions as a high-resolution PdMn thermometer, with a heater resistor mounted on it. The cell is thermally connected to a temperature-controlled cooling stage via a weak thermal link. The heater resistor is electrically connected to the array of Josephson junctions using superconducting wire. An rf-biased array of capacitively shunted Josephson junctions drives the voltage across the heater. The quantized voltage across the resistor is Vn = nf(h/2e), where h is Planck's constant, f is the array biasing frequency, e is the charge of an electron, and n is the integer quantum state of the Josephson array. This results in an electrical power dissipation on the cell of Pn = (Vn)(sup 2/R), where R is the heater resistance. The change of the quantum state of the array changes the power dissipated in the heater, which in turn, results in the change of the cell temperature. This temperature change is compared to the expected values based on the known thermal standoff resistance of the cell from the cooling stage. We will present our initial experimental results and discuss future improvements. This work has been funded by the Fundamental Physics Discipline of the Microgravity Science Office of NASA, and supported by a no-cost equipment loan from Sandia National Laboratories.

Green, Colin J.↗