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Results for “VOLTAGE BREAKDOWN”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Laboratory experience with voltage breakdown

Voltage breakdown failures in photovoltaic module electrical insulations lead to loss of entire source circuits and require costly maintenance and replacement. Avoiding such catastrophes requires that modules be designed so that voltage breakdown either never occurs or occurs so rarely that it affects the least life cycle energy costs insignificantly. To achieve this desired balance of cost and reliability, the module design engineer must understand the failure mechanisms and use data on materials and failue rates to suppress or retard them. Recently obtained failure mechanism information, rate data and materials property data and a qualitative model of module failure prediction are presented.

Mon, G. R.↗
DOE OSTI2020

Encapsulant Void Breakdown Voltage Modeling & Experiments

For high voltage electrical devices, prevention of high voltage breakdown is critical for device function. Use of polymeric encapsulation such as epoxies is common, but these may include air bubbles or other voids of varying size. The present work aimed to model and experimentally determine the size dependence of breakdown voltage for voids in an epoxy matrix, as a step toward establishing size criteria for void screening. Effects were investigated experimentally for both one-dimensional metal/epoxy/air/epoxy/metal gap sizes from 50 μm to 10 mm, as well as spherical voids of 250 μm, 500 μm, 1 mm and 2 mm sizes. These experimental results were compared to modified Paschen curve and particle-in-cell discharge models; minimum breakdown voltages of 6 - 8.5 kV appeared to be predicted by 1D models and experiments, with minimum breakdown voltage for void sizes of 0.2 - 1 mm. In a limited set of 3D experiments on 250 μm, 500 μm, 1 mm and 2 mm voids within epoxy, the minimum breakdown voltages observed were 18.5 - 20 kV, for 500 μm void sizes. These experiments and models are aimed at providing initial size and voltage criteria for tolerable void sizes and expected discharge voltages to support design of encapsulated high voltage components.

42 ENGINEERING↗
NASA NTRS1969

Proceedings of the Second Workshop on Voltage Breakdown in Electronic Equipment at Low Air Pressure

The Second Workshop on Voltage Breakdown in Electronic Equipment at Low Air Pressure was sponsored by the Jet Propulsion Laboratory, Pasadena, California. It has been three and one-half years since the convening of the first workshop on voltage breakdown. In this interval, gains are evidenced in the progress and sophistication in solving voltage breakdown problems affecting electronic equip­ment operating at high altitudes or other low air pressure environments. Although space applications predominate the area of concern, other projects such as the SST are becoming increasingly involved with voltage breakdown. High-voltage breakdown in spacecraft continues; however, the incidences of occurrence appear to have decreased in spite of an increase in the number of missions flown. This, it is felt, is due to many project managers now requiring all equipment with voltage in excess of 270-V peak to be designed to operate in the critical pressure region without damage, even though its normal functional environment is sea level pressure and the hard vacuum of space. In addition, designers are becoming more aware of the principle of good high-voltage design by selecting void-free components, proper spacing of conductors, isolating high-­voltage circuitry from lower voltage areas, etc. The consensus seems to be that the slight increase in cost to achieve a provable corona-free design is more than offset by the increase in confidence that the equipment will survive accidental loss of vacuum during high-vacuum tests, inadvertent turn on while passing through the critical air-pressure region of earth after launch or outgassing in flight pressurizing the enclosure into the critical pressure region.

E. R. Bunker, Jr.↗
NASA NTRS1981

Breakdown voltage of discrete capacitors under single-pulse conditions

For electrostatic capacitors the breakdown voltage is inherently related to the properties of the dielectric, with the important parameters being the dielectric field strength which is related to the dielectric constant and the dielectric thickness. These are not necessarily related to the capacitance value and the rated voltage, but generally the larger values of capacitance have lower breakdown voltages. Foil and wet slug electrolytics can withstand conduction currents pulses without apparent damage (in either direction for foil types). For solid tantalums, damage occurs whenever the capacitor charges to the forming voltage.

Domingos, H.↗
NASA NTRS1974

RF voltage breakdown and the Paschen curve

A representation based on the similarity relations for voltage breakdown is shown to be useful in combining RF and dc voltage breakdown data. The representation for the uniform field geometry is given.

Woo, R.↗
DOE OSTI2021

True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching

This work studies the dynamic breakdown voltage (BV) and overvoltage margin of a 650-V-rated commercial GaN power HEMT in hard switching. The dynamic BV measured in the hard switching circuits is over 1.4 kV, being 450 V higher than the static BV measured in the quasi-static I-V sweep. The device can survive at least 1 million hard-switching overvoltage pulses with 1.33 kV peak overvoltage (~95% dynamic BV). Recoverable device parametric shifts are observed after the 1-million pulses, featuring small reductions in threshold voltage and on-resistance. These shifts are different from the ones after the hard-switching pulses without overvoltage and are attributable to the trapping of the holes produced in impact ionization. Furthermore, these results suggest that the BV and overvoltage margin of GaN HEMTs in practical power switching can be significantly underestimated using the static BV. Index Terms— GaN, HEMT, power electronics, hard switching, breakdown voltage, overvoltage, ruggedness, reliability.

42 ENGINEERING↗
DOE OSTI2019

Comparison of breakdown-voltage of contemporary and veteran photovoltaic backsheets

The ability of designated electrically insulating materials in a module, including the backsheet, to act as insulators is a key safety requirement for photovoltaic technology. The recently developed test standards IEC TS 62788-2 (including a method for direct-current breakdown-voltage) and IEC TS 62788-7-2 (for ultraviolet [UV] weathering) are examined for the first time together in this study. Thirty-six contemporary backsheets were compared using the breakdown-voltage test, before and after UV weathering, according to the recent A3 test condition. Twenty-eight backsheets, extracted from a variety of veteran photovoltaic modules, were also examined using the breakdown test. Additional characterizations were performed to interpret the breakdown-voltage results, including: surface and cross-sectional optical microscopy failure analysis; cross-sectional scanning electron (SEM) microscopy with EDS energy-dispersive X-ray spectroscopy (EDX) failure analysis; Fourier-transform infrared spectroscopy (FTIR) to identify the base resin and its chemical integrity; and differential scanning calorimetry (DSC) to identify phase transitions that might adversely affect degradation during weathering. The electrical insulation for the backsheets is discussed relative to: the industry safety requirement; features observed to facilitate the degradation of insulation; the validity of the artificial UV weathering test; the validity of the sheet geometry used for specimens in this study; and the validity of subsequent mechanical testing.

14 SOLAR ENERGY↗