Search NASA⌕ Search

SEARCH · Search NASA

Results for “Vector Network Analyzer”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

On-wafer vector network analyzer measurements in the 220-325 Ghz frequency band

We report on a full two-port on-wafer vector network analyzer test set for the 220-325 GHz (WR3) frequency band. The test set utilizes Oleson Microwave Labs frequency extenders with the Agilent 8510C network analyzer. Two port on-wafer measurements are made with GGB Industries coplanar waveguide (CPW) probes. With this test set we have measured the WR3 band S-parameters of amplifiers on-wafer, and the characteristics of the CPW wafer probes. Results for a three stage InP HEMT amplifier show 10 dB gain at 235 GHz [1], and that of a single stage amplifier, 2.9 dB gain at 231 GHz. The approximate upper limit of loss per CPW probe range from 3.0 to 4.8 dB across the WR3 frequency band.

coplanar waveguides↗
NASA NTRS2008

Measurements by a Vector Network Analyzer at 325 to 508 GHz

Recent experiments were performed in which return loss and insertion loss of waveguide test assemblies in the frequency range from 325 to 508 GHz were measured by use of a swept-frequency two-port vector network analyzer (VNA) test set. The experiments were part of a continuing effort to develop means of characterizing passive and active electronic components and systems operating at ever increasing frequencies. The waveguide test assemblies comprised WR-2.2 end sections collinear with WR-3.3 middle sections. The test set, assembled from commercially available components, included a 50-GHz VNA scattering- parameter test set and external signal synthesizers, augmented with recently developed frequency extenders, and further augmented with attenuators and amplifiers as needed to adjust radiofrequency and intermediate-frequency power levels between the aforementioned components. The tests included line-reflect-line calibration procedures, using WR-2.2 waveguide shims as the "line" standards and waveguide flange short circuits as the "reflect" standards. Calibrated dynamic ranges somewhat greater than about 20 dB for return loss and 35 dB for insertion loss were achieved. The measurement data of the test assemblies were found to substantially agree with results of computational simulations.

Fung, King Man↗
NASA NTRS2012

Calibration Procedure for Measuring S-Parameters in Balun Applications on 150-ohm High-Speed Cables

In the radiofrequency (RF) world, in order to characterize cables that do not conform to the typical 50-omega impedance, a time domain reflectometer (TDR) would probably be the simplest and quickest tool to attain this goal. In the real world, not every engineer has a TDR at their disposal; however, they most likely have a network analyzer available. Given a generic 50-omega vector network analyzer (VNA), we would like to make S-parameter measurements for non-50-omega devices (DUTs). For that, we utilize RF balanced/unbalanced transformers (called baluns for short), which are primarily used to match the impedance between the two VNA ports and the DUT's input and output ports, for the two-port S-parameter measurements.

Theofylaktos, Onoufrios↗
NASA NTRS2009

System for Automated Calibration of Vector Modulators

Vector modulators are used to impose baseband modulation on RF signals, but non-ideal behavior limits the overall performance. The non-ideal behavior of the vector modulator is compensated using data collected with the use of an automated test system driven by a LabVIEW program that systematically applies thousands of control-signal values to the device under test and collects RF measurement data. The technology innovation automates several steps in the process. First, an automated test system, using computer controlled digital-to-analog converters (DACs) and a computer-controlled vector network analyzer (VNA) systematically can apply different I and Q signals (which represent the complex number by which the RF signal is multiplied) to the vector modulator under test (VMUT), while measuring the RF performance specifically, gain and phase. The automated test system uses the LabVIEW software to control the test equipment, collect the data, and write it to a file. The input to the Lab - VIEW program is either user-input for systematic variation, or is provided in a file containing specific test values that should be fed to the VMUT. The output file contains both the control signals and the measured data. The second step is to post-process the file to determine the correction functions as needed. The result of the entire process is a tabular representation, which allows translation of a desired I/Q value to the required analog control signals to produce a particular RF behavior. In some applications, corrected performance is needed only for a limited range. If the vector modulator is being used as a phase shifter, there is only a need to correct I and Q values that represent points on a circle, not the entire plane. This innovation has been used to calibrate 2-GHz MMIC (monolithic microwave integrated circuit) vector modulators in the High EIRP Cluster Array project (EIRP is high effective isotropic radiated power). These calibrations were then used to create correction tables to allow the commanding of the phase shift in each of four channels used as a phased array for beam steering of a Ka-band (32-GHz) signal. The system also was the basis of a breadboard electronic beam steering system. In this breadboard, the goal was not to make systematic measurements of the properties of a vector modulator, but to drive the breadboard with a series of test patterns varying in phase and amplitude. This is essentially the same calibration process, but with the difference that the data collection process is oriented toward collecting breadboard performance, rather than the measurement of output from a network analyzer.

Lux, James↗
NASA NTRS1988

Technique for measuring the dielectric constant of thin materials

A practical technique for measuring the dielectric constant of vegetation leaves and similarly thin materials is presented. A rectangular section of the leaf is placed in the tranverse plane in a rectangular waveguide and the magnitude and phase of the reflection coefficient are measured over the desired frequency band using a vector network analyzer. By treating the leaf as an infinitesimally thin resistive sheet, an explicit expression for its dielectric constant is obtained in terms of the reflection coefficient. Because of the thin-sheet approximation, however, this approach is valid only at frequencies below 1.5 GHz. To extend the technique to higher frequencies, higher order approximations are derived and their accuracies are compared to the exact dielectric-slab solution. For a material whose thickness is 0.5 mm or less, the proposed technique was found to provide accurate values of its dielectric constant up to frequencies of 12 GHz or higher. The technique was used to measure the 8 to 12 GHz dielectric spectrum for vegetation leaves, teflon and rock samples.

Sarabandi, K.↗
NASA NTRS1993

High temperature electromagnetic characterization of thermal protection system tile materials

This study investigated the impact of elevated temperatures on the electromagnetic performance of the LI-2200 thermal protection system. A 15-kilowatt CO2 laser was used to heat an LI-2200 specimen to 3000 F while electromagnetic measurements were performed over the frequency range of l9 to 21 GHz. The electromagnetic measurement system consisted of two Dual-Lens Spot-Focusing (DLSF) antennas, a sample support structure, and an HP-8510B vector network analyzer. Calibration of the electromagnetic system was accomplished with a Transmission-Reflection-Line (TRL) procedure and was verified with measurements on a two-layer specimen of known properties. The results of testing indicated that the LI-2200 system's electromagnetic performance is slightly temperature dependent at temperatures up to 3000 F.

Heil, Garrett G.↗
NASA NTRS1995

Reflectometer distance measurement between parallel conductive plates

This report presents an analytic and experimental investigation of the measurement problem in which a reflectometer is used to determine the distance to a target that is a highly conductive surface parallel to the reflectometer antenna ground plane. These parallel surfaces constitute a waveguide (WG) which can contribute parasitic perturbations that seriously degrade the accuracy of the measurements. Two distinct parallel-plate-waveguide (PPWG) phenomena are described, and their effects on both frequency and time-domain reflectometers are considered. The time-domain processing approach was found to be superior to a representative frequency-domain phase-measurement approach because of less susceptibility to perturbations produced by edge reflections and immunity to phase capture. Experimental results are presented which show that a simple radiating system modification can suppress parallel-plate (PP) propagation. The addition of a thin layer of lossy mu-metal 'magnetic absorber' to the antenna ground plane allowed a measurement accuracy of 0.025 cm (0.01 in.) when a vector network analyzer (VNA) is used as a time-domain reflectometer.

Hearn, Chase P.↗
NASA NTRS1996

Fade Measurements into Buildings from 500 to 3000 MHz

Slant-path fade measurements from 500 to 3000 MHz were made into six different buildings employing a vector network analyzer, a tower-mounted transmitting antenna and an automatically positioned receiving antenna. The objective of the measurements was to provide information for satellite audio broadcasting and personal communications satellite design on the correlation of fading inside buildings. Fades were measured with 5 cm spatial separation and every 0.2 percent of the frequency. Median fades ranged from 10 to 20 dB in woodframe houses with metal roofs and walls without and with an aluminum heat shield, respectively. The median decorrelation distance was from 0.5 to 1.1. m and was independent of frequency. The attenuation into the buildings increased only moderately with frequency in most of the buildings with a median slope of about 1 to 3 db/GHz, but increased fastest in the least attenuating building with a slope of 5 dB/GHz. The median decorrelation bandwidth ranged from 1.2 to 3.8 percent of frequency in five of the buildings, and was largest in the least attenuating building, with 20.2 percent of frequency.

Vogel, Wolfhard J.↗
NASA NTRS1996

Fade Measurements into Buildings from 500 to 3000 MHz

Slant-path fade measurements from 500 to 3000 MHz were made into six different buildings employing a vector network analyzer, a tower-mounted transmitting antenna and an automatically positioned receiving antenna. The objective of the measurements was to provide information for satellite audio broadcasting and personal communications satellite design on the correlation of fading inside buildings. Fades were measured with 5 cm spatial separation and every 0.2% of the frequency. Median fades ranged from 10 to 20 dB in woodframe houses with metal roofs and walls without and with an aluminum heatshield, respectively. The median decorrelation distance was from 0.5 to 1.1 m and was independent of frequency. The attenuation into the buildings increased only moderately with frequency in most of the buildings with a median slope of about 1 to 3 dB/GHz, but increased fastest in the least attenuating building with a slope of 5 dB/GHz. The median decorrelation bandwidth ranged from 1.2 to 3.8% of frequency in five of the buildings, and was largest in the least attenuating building, with 20.2% of frequency.

Vogel, Wolfhard J.↗
NASA NTRS2002

Fabrication and Electromagnetic Characterization of Novel Self-Metallized Thin Films

Unique, self-metallized films were investigated for deployable reflector antenna applications at L-band. Polyamic acid resins or soluble polyimides were doped with metal complexes, cast into films, and thermally cured. Each resulting film had a metallic layer on one side, adhering unfailingly to the polymer. Metallization was successful for silver or palladium in 3,3',4,4'-benzophenonetetracarboxylic acid dianhydride (BTDA) and 4,4'- oxydianiline and for gold in BTDA and 2,2-bis[4-(4- aminophenoxy)phenyl]hexafluoropropane (4-BDAF) or the space durable polyimide, 2,2-bis(3,4-dicarboxyphenyl)- hexafluoropropane dianhydride and 4-BDAF (LaRCCP1). Reflectivity, transmissivity, and emissivity were determined, using an HP 8510 Vector Network Analyzer, to within 0.001 precision and accuracy. A custom-made test fixture/positioner, a thru-reflect-line calibration, and calculated reflection coefficients were used. The Ag film proved most suitable for further study, with 0.9957 reflectivity and 0.0042 emissivity. The Pd films were 0.89 reflective and 0.11 emissive; both Au films tested entirely transmissive. Transmission and scanning electron micrographs, S-parameters, and power coefficients are shown.

Mackenzie, Anne I.↗
NASA NTRS2004

Waveguide Power Combiner Demonstration for Multiple High Power Millimeter Wave TWTAs

NASA is presently developing nuclear reactor technologies, under Project Prometheus, which will provide spacecraft with greatly increased levels of sustained onboard power and thereby dramatically enhance the capability for future deep space exploration. The first mission planned for use of this high power technology is the Jupiter Icy Moons Orbiter (JIMO). In addition to electric propulsion and science, there will also be unprecedented onboard power available for deep space communications. A 32 GHz transmitter with 1 kW of RF output power is being considered to enable the required very high data transmission rates. One approach to achieving the 1 kW RF power, now being investigated at NASA GRC, is the possible power combining of a number of 100-1 50 W TWTs now under development. The work presented here is the results of a proof-of-concept demonstration of the power combining Ka-band waveguide circuit design and test procedure using two Ka- band TWTAs (Varian model VZA6902V3 and Logimetrics model A440/KA-1066), both of which were previously employed in data uplink evaluation terminals at 29.36 GHz for the NASA Advanced Communications Technology Satellite (ACTS) program. The characterization of the individual TWTAs and power combining demonstration were done over a 500 MHz bandwidth from 29.1 to 29.6 GHz to simulate the Deep Space Network (DSN) bandwidth of 3 1.8 to 32.3 GHz. Figures 1-3 show some of the power transfer and gain measurements of the TWTAs using a swept signal generator (Agilent 83640b) for the RF input. The input and output powers were corrected for circuit insertion losses due to the waveguide components. The RF saturated powers of both ACTS TWTAs were on the order of 120 W, which is comparable to the expected output powers of the 32 GHz TWTs. Additional results for the individual TWTAs will be presented (AM/AM, AM/PM conversion and gain compression), some of which were obtained from swept frequency and power measurements using a vector network analyzer. The results for the power combining demonstration as well as a more detailed description of the power combining test circuit and test procedure will also be presented.

Wintucky, Edwin G.↗
NASA NTRS1993

A Back-To-Back Barrier-N-N+ (bbBNN)Diode Tripler at 200 GHz

This paper describes the performance of planar back-to-back Barrier-N-N+ (bbBNN) devices for mm and submm wave multiplier applications. A technique has been developed for characterizing planar bbBNN devices with Vector Network Analyzer, which gives both the series resistance and voltage dependent capacitance of the device.

Diode Tripler↗
NASA NTRS2005

Beyond G-band : a 235 GHz InP MMIC amplifier

We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

high electron mobility transistors (HEMTs)↗
NASA NTRS2008

First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies

Recent developments in semiconductor technology have enabled advanced submillimeter wave (300 GHz) transistors and circuits. These new high speed components have required new test methods to be developed for characterizing performance, and to provide data for device modeling to improve designs. Current efforts in progressing high frequency testing have resulted in on-wafer-parameter measurements up to approximately 340 GHz and swept frequency vector network analyzer waveguide measurements to 508 GHz. On-wafer noise figure measurements in the 270-340 GHz band have been demonstrated. In this letter we report on on-wafer power measurements at 330 GHz of a three stage amplifier that resulted in a maximum measured output power of 1.78mW and maximum gain of 7.1 dB. The method utilized demonstrates the extension of traditional power measurement techniques to submillimeter wave frequencies, and is suitable for automated testing without packaging for production screening of submillimeter wave circuits.

monolithic microwave integrated circircuit↗
NASA NTRS2008

NASA Tech Briefs, February 2008

Topics discussed include: Optical Measurement of Mass Flow of a Two-Phase Fluid; Selectable-Tip Corrosion-Testing Electrochemical Cell; Piezoelectric Bolt Breakers and Bolt Fatigue Testers; Improved Measurement of B(sub 22) of Macromolecules in a Flow Cell; Measurements by a Vector Network Analyzer at 325 to 508 GHz; Using Light to Treat Mucositis and Help Wounds Heal; Increasing Discharge Capacities of Li-(CF)(sub n) Cells; Dot-in-Well Quantum-Dot Infrared Photodetectors; Integrated Microbatteries for Implantable Medical Devices; Oxidation Behavior of Carbon Fiber-Reinforced Composites; GIDEP Batching Tool; Generic Spacecraft Model for Real-Time Simulation; Parallel-Processing Software for Creating Mosaic Images; Software for Verifying Image-Correlation Tie Points; Flexcam Image Capture Viewing and Spot Tracking; Low-Pt-Content Anode Catalyst for Direct Methanol Fuel Cells; Graphite/Cyanate Ester Face Sheets for Adaptive Optics; Atomized BaF2-CaF7 for Better-Flowing Plasma-Spray Feedstock; Nanophase Nickel-Zirconium Alloys for Fuel Cells; Vacuum Packaging of MEMS With Multiple Internal Seal Rings; Compact Two-Dimensional Spectrometer Optics; and Fault-Tolerant Coding for State Machines.

Source record↗
NASA NTRS2007

35-45 Giga Hertz Transceiver System for Phase and Magnitude Detection

Nondestructive evaluation (NDE) is the science and practice of examining an object in a way that the object's usefulness is not adversely affected. Different types of NDE methods exist but this thesis is based on microwave and millimeter wave NDE using imaging techniques. Microwave NDE is based on illuminating the object under test with a microwave signal and studying the various properties of the reflected signal from the object. This reflected signal contains some information about the inner structure of the object under test. This information may be contained in several parameters including the phase and magnitude of the reflected signal. The goal of this project is to design and build a Q-band coherent transceiver that is capable of measuring the reflected signal's phase and magnitude so that an image of the object under test may be reconstructed. From the several techniques that can be used to construct an image of the object under test, techniques of interest to this work include synthetic aperture focusing technique (SAFT) and microwave holography. The transceiver system should have the ability to sweep a large portion of Q-band frequency range in small frequency steps as quick as possible while the detected phase and magnitude of the reflected signal is very accurate. Several different designs were studied and the final schematic diagram of the transceiver system was determined. One of the most important modules that was designed, implemented and tested in the laboratory was an accurate phase/magnitude detector circuit. The compared results of the scans using the transceiver system and vector network analyzer (VNA) showed that this transceiver system has a great potential to replace a VNA for the purpose of microwave and millimeter wave imaging.

Beni, Aman Aflaki↗
NASA NTRS2006

Equipment for On-Wafer Testing From 220 to 325 GHz

A system of electronic instrumentation, constituting the equivalent of a two-port vector network analyzer, has been developed for use in on-wafer measurement of key electrical characteristics of semiconductor devices at frequencies from 220 to 325 GHz. A prior system designed according to similar principles was reported in Equipment for On-Wafer Testing at Frequencies Up to 220 GHz (NPO-20760), NASA Tech Briefs, Vol. 25, No. 11 (November 2001), page 42. As one would expect, a major source of difficulty in progressing to the present higher-frequency-range system was the need for greater mechanical precision as wavelengths shorten into the millimeter range, approaching the scale of mechanical tolerances of prior systems. The system (see figure) includes both commercial off-the-shelf and custom equipment. As in the system of the cited prior article, the equipment includes test sets that are extended versions of commercial network analyzers that function in a lower frequency range. The extension to the higher frequency range is accomplished by use of custom frequency-extension modules that contain frequency multipliers and harmonic mixers. On-wafer measurement is made possible by waveguide wafer probes that were custom designed and built for this wavelength range, plus an on-wafer calibration substrate designed for use with these probes. In this case, the calibration substrate was specially fabricated by laser milling. The system was used to make the first on-wafer measurements of a semiconductor device in the frequency range from 220 to 320 GHz. Some of the measurement results showed that the device had gain.

Samoska, Lorene↗