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At least 19 records

Field effect transistors used as voltage controlled resistors

Two new methods of incorporating field effect transistors into circuit designs have resulted in linear response of this type transistor over a wide range of controlled voltage levels. This increases its usefulness as a voltage-controlled resistor.

Source record

Induction motor control system with voltage controlled oscillator circuit

A voltage controlled oscillator circuit is reported in which there are employed first and second differential amplifiers. The first differential amplifier, being employed as an integrator, develops equal and opposite slopes proportional to an input voltage, and the second differential amplifier functions as a comparator to detect equal amplitude positive and negative selected limits and provides switching signals which gate a transistor switch. The integrating differential amplifier is switched between charging and discharging modes to provide an output of the first differential amplifier which upon the application of wave shaping provides a substantially sinusoidal output signal. A two phased version with a second integrator provides a second 90 deg phase shifted output for induction motor control.

Nola, F. J.

Automatic frequency control of voltage-controlled oscillators

Optical-capacitive coupling is used for isolation of control voltages, such as the high-voltage level of a klystron control electrode that is not referenced to ground, to serve as error voltages referenced to system ground so that the magnitude and sense of correction may be transferred.

Kolbly, R. B.

Voltage control for corona charging thermoplastics

Controlled voltage is accomplished by placing metal plate with hole in it near surface of film. During charging, thermoplastic will accumulate charge only until it reaches plate voltage; after that, all charge will be deflected to plate.

Mezrich, R. S.

Symmetric voltage-controlled variable resistance

Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.

Vanelli, J. C.

One hundred MHz voltage-controlled oscillator

Voltage controlled oscillator /VCXO/ generates a center frequency of 100 MHz with low phase noise. VCXOs at this and lower frequencies are applied to phase-lock-loop detection systems used in tracking receivers and telemetry systems.

Sward, A. V., Jr.

Digital voltage-controlled oscillator

Digital voltage-controlled oscillator generates a variable frequency signal controlled linearly about a center frequency with high stability and is phase controlled by an applied voltage. Integration ahead of the digital circuitry provides linear operation with control voltage having appreciable noise components.

Saliga, T. V.

Complementary Paired G4FETs as Voltage-Controlled NDR Device

It is possible to synthesize a voltage-controlled negative-differential-resistance (NDR) device or circuit by use of a pair of complementary G4FETs (four-gate field-effect transistors). [For more information about G4FETs, please see the immediately preceding article]. As shown in Figure 1, the present voltage-controlled NDR device or circuit is an updated version of a prior NDR device or circuit, known as a lambda diode, that contains a pair of complementary junction field-effect transistors (JFETs). (The lambda diode is so named because its current-versus- voltage plot bears some resemblance to an upper-case lambda.) The present version can be derived from the prior version by substituting G4FETs for the JFETs and connecting both JFET gates of each G4FET together. The front gate terminals of the G4FETs constitute additional terminals (that is, terminals not available in the older JFET version) to which one can apply control voltages VN and VP. Circuits in which NDR devices have been used include (1) Schmitt triggers and (2) oscillators containing inductance/ capacitance (LC) resonant circuits. Figure 2 depicts such circuits containing G4FET NDR devices like that of Figure 1. In the Schmitt trigger shown here, the G4FET NDR is loaded with an ordinary inversion-mode, p-channel, metal oxide/semiconductor field-effect transistor (inversion-mode PMOSFET), the VN terminal of the G4FET NDR device is used as an input terminal, and the input terminals of the PMOSFET and the G4FET NDR device are connected. VP can be used as an extra control voltage (that is, a control voltage not available in a typical prior Schmitt trigger) for adjusting the pinch-off voltage of the p-channel G4FET and thereby adjusting the trigger-voltage window. In the oscillator, a G4FET NDR device is loaded with a conventional LC tank circuit. As in other LC NDR oscillators, oscillation occurs because the NDR counteracts the resistance in the tank circuit. The advantage of this G4FET-NDR LC oscillator over a conventional LC NDR oscillator is that one can apply a time-varying signal to one of the extra control input terminals (VN or VP) to modulate the conductance of the NDR device and thereby amplitude-modulate the output signal.

Mojarradi, Mohammad

80-GHz MMIC HEMT Voltage-Controlled Oscillator

A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz

Samoska, Lorene

Distributed Online Voltage Control in Distribution Network: A Two-Stage Real-Time Implementation

The increasing integration of renewable-based distributed generation (DG) brings growing challenges to distribution network (DN) voltage control. To address this issue, a two-stage distributed online voltage control framework (TDO-VC) is proposed in this paper. In the proposed method, legacy voltage control devices are controlled in the upper stage on an hourly timescale, while DGs operate autonomously online in the lower stage to remove instantaneous voltage violations. The idea of receding horizon control is applied in the upper stage to comprehensively consider the current and future renewable generation, and the generalized fast dual ascent (Gf-DA) is employed in the lower stage to effectively manage DGs through near real-time optimization. The effectiveness of the proposed TDO-VC is demonstrated by rigorous theoretical analysis and case studies on IEEE-123 bus system.

Distributed generation

Coordination of Energy Storage and Distributed Generation for Voltage Control and Peak-valley Filling

The increasing penetration of distributed energy resources (DERs) in distribution network (DN) poses challenges on voltage control. In addition, the growing integration of DERs also reshapes the traditional load profile. To comprehensively address the voltage control and peak-valley filling in DN, this paper proposes a model predictive control (MPC) based optimization framework. The proposed method can achieve coordinated voltage control and peak-valley filling by adjusting the reactive power output from distributed generations (DGs) and the charging/discharging of energy storage systems (ESS). The performance of the proposed method is demonstrated by simulations on a modified IEEE-123 bus system.

Zhang, Zhengfa [University of Tennessee, Knoxville

Analog-to-digital converter based on voltage-controlled superconducting devices

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra-energy-efficient data conversion architectures that remain functional at deep cryogenic temperatures. Here, in this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a voltage-controlled quantum-enhanced Josephson junction field-effect transistor (JJFET). Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current-controlled superconducting devices while aligning naturally with CMOS-style design methodologies. Building on our previously developed Verilog-A compact model calibrated to experimental data, we design and simulate a three-bit JJFET-based flash ADC targeted for integration within cryogenic control and readout circuitry in quantum computing. The core comparator block is realized through careful bias current selection and augmented with a three-terminal nanocryotron to precisely define reference voltages. Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic-level restoration across stages. Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage-driven superconducting mixed-signal circuits. This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum–classical co-processors, low-power artificial intelligence accelerators, and next-generation energy-constrained computing platforms.

Analog-to-digital converter

Detecting isolated resonance curves using fixed frequency voltage control tests

Isolated resonance curves, or isolas, are resonance branches of the harmonically forced system that exist separately from the main nonlinear forced response curve, leading to excessive vibrations. Traditional stepped or swept sine simulations and tests rely on continuation along the frequency parameter, typically resulting in a jump phenomenon along the primary resonance branch, prior to the disconnected isola. The main objective of this research is to propose an approach to identify isolated resonance curves by performing continuation along the input amplitude that initializes the response from a low-amplitude solution in the linear regime. Furthermore, this is achieved with the open-loop fixed frequency voltage control method that continues along the shaker voltage parameter and measures the so-called S-curves, which are theoretically a continuous solution branch that connect to the isola. The methodology is demonstrated on a fixture-wing-pylon assembly with a vibro-impact nonlinearity localized in a pylon subcomponent attachment. Multi-harmonic balance simulations are deployed to compute both the nonlinear forced response curves and S-curves to demonstrate the isola detection strategy on a reduced-order finite element model of the nonlinear system. Swept sine and fixed frequency voltage control tests are then conducted on the physical structure to demonstrate the isola detection experimentally, revealing the existence of the large amplitude vibrations that are undetected in the forces levels and frequencies measured with traditional frequency sweeping.

Characterization and Analytical Technique

Topology-Aware Reinforcement Learning for Voltage Control: Centralized and Decentralized Strategies

Volt-VAR control (VVC) methods based on deep reinforcement learning (DRL) can effectively control distribution grid voltage and minimize power loss by implementing corrective and preventive control measures on the reactive power output of inverter-based distributed energy resources (DERs). However, model-free DRL-based VVC approaches usually cannot capture the important topological feature of the power system since they use a fully-connected network (FCN) to deliver the action. Therefore, this paper proposes a graph convolutional network (GCN)-based DRL approach that can employ the topological information of the network to take better control action for regulating the voltage. Our implementation allows for both centralized and decentralized configurations, utilizing a single agent and multiple agents respectively. Although the centralized GCN-based DRL approach has its advantages of minimizing voltage fluctuation and power loss, it is not suitable for large scale power systems due to its challenges in terms of scalability, computation speed and potential single points of failure. Therefore, these problems can be resolved using the decentralized GCN-based DRL approach. Moreover, to ensure the safe operation of the model, our proposed approach incorporates an exponential barrier function while formulating the reward function for each agent. To validate performance of the proposed approaches, the proposed model is tested on modified IEEE test systems and the performances are measured in terms on voltage fluctuation reduction, minimization of power loss and computational speed. Finally, the results show that the proposed topology-aware approach outperforms the FCN-based DRL approach in terms of reducing voltage fluctuation and minimizing power loss of the network. Moreover, it is shown that the decentralized GCN-based DRL has faster computational speed than other approaches.

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