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Seebeck effect solid state switch was developed eliminating thermoelectric generator switch voltage drops. Semiconductor switches were fabricated from materials with large Seebeck coefficients, arranged such that Seebeck potential is generated with such polarity that current flow is aided.
An assessment is presented of the current state of knowledge concerning Birkeland currents and the parallel electric field, with discussions focusing on the Birkeland primary region 1 sheets, the region 2 sheets which parallel them and appear to close in the partial ring current, the cusp currents (which may be correlated with the interplanetary B(y) component), and the Harang filament. The energy required by the parallel electric field and the associated particle acceleration processes appears to be derived from the Birkeland currents, for which evidence is adduced from particles, inverted V spectra, rising ion beams and expanded loss cones. Conics may on the other hand signify acceleration by electrostatic ion cyclotron waves associated with beams accelerated by the parallel electric field.
Data from sufficiently well-instrumented, short-duration experiments at AEDC/HPDE, Reynolds Metal Co., and Hercules, Inc., are compared to analyses with multidimensional and time-dependent simulations with the STD/MHD computer codes. These analyses reveal detailed features of major transient events, severe loss mechanisms, and anomalous MHD behavior. In particular, these analyses predicted higher-than-design voltage drops, Hall voltage overshoots, and asymmetric voltage drops before the experimental data were available. The predictions obtained with these analyses are in excellent agreement with the experimental data and the failure predictions are consistent with the experiments. The design of large, high-interaction or advanced MHD experiments will require application of sophisticated, detailed and comprehensive computational procedures in order to account for the critical mechanisms which led to the observed behavior in these experiments.
The protocol for charging a lithium-ion battery would be modified, according to a proposal, to compensate for the internal voltage drop (charging current internal resistance of the battery). The essence of the modification is to provide for measurement of the internal voltage drop and to increase the terminal-voltage setting by the amount of the internal voltage drop. Ordinarily, a lithium-ion battery is charged at constant current until its terminal voltage attains a set value equal to the nominal full-charge potential. The set value is chosen carefully so as not to exceed the lithium-plating potential, because plated lithium in metallic form constitutes a hazard. When the battery is charged at low temperature, the internal voltage drop is considerable because the electrical conductivity of the battery electrolyte is low at low temperature. Charging the battery at high current at any temperature also gives rise to a high internal voltage drop. In some cases, the internal voltage drop can be as high as 1 volt per cell. Because the voltage available for charging is less than the terminal voltage by the amount of the internal voltage drop, the battery is not fully charged (see figure), even when the terminal voltage reaches the set value. In the modified protocol, the charging current would be periodically interrupted so that the zero-current battery-terminal voltage indicative of the state of charge could be measured. The terminal voltage would also be measured at full charging current. The difference between the full-current and zero-current voltages would equal the internal voltage drop. The set value of terminal voltage would then be increased beyond the nominal full-charge potential by the amount of the internal voltage drop. This adjustment would be performed repeatedly, in real time, so that the voltage setting would track variations in the internal voltage drop to afford full charge without risk of lithium plating. If the charging current and voltage settings were controlled by a computer, then this method of charge control could readily be implemented in software.
Synchronous rectifying circuit behaves like diode having unusually low voltage drop during forward-voltage half cycles. Circuit particularly useful in power supplies with potentials of 5 Vdc or less, where normal forward-voltage drops in ordinary diodes unacceptably large. Fabricated as monolithic assembly or as hybrid. Synchronous half-wave rectifier includes active circuits to attain low forward voltage drop and high rectification efficiency.
Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.
A circuit topology has been designed to guarantee the output of intrinsically safe power for the operation of electrical devices in a hazardous environment. This design uses a MOSFET (metal oxide semiconductor field-effect transistor) as a switch to connect and disconnect power to a load. A test current is provided through a separate path to the load for monitoring by a comparator against a preset threshold level. The circuit is configured so that the test current will detect a fault in the load and open the switch before the main current can respond. The main current passes through the switch and then an inductor. When a fault occurs in the load, the current through the inductor cannot change immediately, but the voltage drops immediately to safe levels. The comparator detects this drop and opens the switch before the current in the inductor has a chance to respond. This circuit protects both the current and voltage from exceeding safe levels. Typically, this type of protection is accomplished by a fuse or a circuit breaker, but in order for a fuse or a circuit breaker to blow or trip, the current must exceed the safe levels momentarily, which may be just enough time to ignite anything in a hazardous environment. To prevent this from happening, a fuse is typically current-limited by the addition of the resistor to keep the current within safe levels while the fuse reacts. The use of a resistor is acceptable for non-battery applications where the wasted energy and voltage drop across the resistor can be tolerated. The use of the switch and inductor minimizes the wasted energy. For example, a circuit runs from a 3.6-V battery that must be current-limited to 200 mA. If the circuit normally draws 10 mA, then an 18-ohm resistor would drop 180 mV during normal operation, while a typical switch (0.02 ohm) and inductor (0.97 ohm) would only drop 9.9 mV. From a power standpoint, the current-limiting resistor protection circuit wastes about 18 times more power than the switch and the inductor configuration. In the fault condition, both the resistor and the inductor react immediately. The resistor reacts by allowing more current to flow and dropping the voltage. Initially, the inductor reacts by dropping the voltage, and then by not allowing the current to change. When the comparator detects the drop in voltage, it opens the switch, thus preventing any further current flow. The inductor alone is not sufficient protection, because after the voltage drop has settled, the inductor would then allow the current to change, in this example, the current would be 3.7 A. In the fault condition, the resistor is flowing 200 mA until the fuse blows (anywhere from 1 ms to 100 s), while the switch and inductor combination is flowing about 2 A test current while monitoring for the fault to be corrected. Finally, as an additional safety feature, the circuit can be configured to hold the switch opened until both the load and source are disconnected.
A spectrometer system includes a thermal light source for illuminating a sample, where the thermal light source includes a filament that emits light when heated. The system additionally includes a spectrograph for measuring a light spectrum from the sample and an electrical circuit for supplying electrical current to the filament to heat the filament and for controlling a resistance of the filament. The electrical circuit includes a power supply that supplies current to the filament, first electrical components that sense a current through the filament, second electrical components that sense a voltage drop across the filament, third electrical components that compare a ratio of the sensed voltage drop and the sensed current with a predetermined value, and fourth electrical components that control the current through the filament or the voltage drop across the filament to cause the ratio to equal substantially the predetermined value.
We report the results of an investigation of particle acceleration and electron-positron plasma generation at low altitude in the polar magnetic flux tubes of rotation-powered pulsars, when the stellar surface is free to emit whatever charges and currents are demanded by the force-free magnetosphere. We apply a new 1D hybrid plasma simulation code to the dynamical problem, using Particle-in-Cell methods for the dynamics of the charged particles, including a determination of the collective electrostatic fluctuations in the plasma, combined with a Monte Carlo treatment of the high-energy gamma-rays that mediate the formation of the electron-positron pairs.We assume the electric current flowing through the pair creation zone is fixed by the much higher inductance magnetosphere, and adopt the results of force-free magnetosphere models to provide the currents which must be carried by the accelerator. The models are spatially one dimensional, and designed to explore the physics, although of practical relevance to young, high-voltage pulsars. We observe novel behaviour (a) When the current density j is less than the Goldreich-Julian value (0 < j/j(sub GJ) < 1), space charge limited acceleration of the current carrying beam is mild, with the full Goldreich-Julian charge density comprising the charge densities of the beam and a cloud of electrically trapped particles with the same sign of charge as the beam. The voltage drops are of the order of mc(sup 2)/e, and pair creation is absent. (b) When the current density exceeds the Goldreich-Julian value (j/j(sub GJ) > 1), the system develops high voltage drops (TV or greater), causing emission of curvature gamma-rays and intense bursts of pair creation. The bursts exhibit limit cycle behaviour, with characteristic time-scales somewhat longer than the relativistic fly-by time over distances comparable to the polar cap diameter (microseconds). (c) In return current regions, where j/j(sub GJ) < 0, the system develops similar bursts of pair creation. These discharges are similar to those encountered in previous calculations by Timokhin of pair creation when the surface has a high work function and cannot freely emit charge. In cases (b) and (c), the intermittently generated pairs allow the system to simultaneously carry the magnetospherically prescribed currents and adjust the charge density and average electric field to force-free conditions. We also elucidate the conditions for pair creating beam flow to be steady (stationary with small fluctuations in the rotating frame), finding that such steady flows can occupy only a small fraction of the current density parameter space exhibited by the force-free magnetospheric model. The generic polar flow dynamics and pair creation are strongly time dependent. The model has an essential difference from almost all previous quantitative studies, in that we sought the accelerating voltage (with pair creation, when the voltage drops are sufficiently large; without, when they are small) as a function of the applied current.
Reverse-flow HEXFET(R) minimizes voltage drop and power dissipation. HEXFET(R) scheme reduces voltage drop by approximately 80 percent. Design for power tap for random-access memory (RAM) has potential application in digital systems.
New automatic-level-control circuit protects against signal "overshoot." Zener diodes and series capacitors prevent voltage spikes (caused by sudden increase in input level) from appearing at output. When spike voltage drops below breakdown voltage of Zener diodes, they turn off. Initial output level is determined by Zener breakdown voltage and capacitance of series capacitor.
Following the passage of an interplanetary shock at approximately 0500 UT, a major geomagnetic storm developed on October 22-23, 1981. Numerous auroral substorms occurred during this storm leading to an AE index greater than 1000 nT. We have used the expanding/contracting polar cap (ECPC) model (Moses et al., 1989) and data from the Dynamics Explorer 2 spacecraft to study the ionospheric electric fields for 12 consecutive traversals of the polar regions. The ECPC model can determine the voltage drops across the dayside merging and nightside reconnection gaps. We determined the relationship of the AL index (i.e., the intensity of the westward electrojet) to the nightside reconnection potential drop. An excellent linear correlation was found between the nightside reconnection gap voltage drop and the AL index. These results show that the solar wind strongly drives the magnetosphere-ionosphere system throughout the geomagnetic storm. A substantial level of dayside merging seems to occur throughout the event. Nightside reconnection varies from satellite pass to satellite pass and within the substorm recovery phase. We find that tail reconnection is an important feature of the recovery phase of substorms.
A thin film gauge for use in measuring distributed convective heat transfer rates occurring along given surfaces, is described. The gauge is particularly suited to measuring test surfaces in the air stream of a wind tunnel. The gauge is characterized by a plurality of painted platinum leads extend across the surface of a substrate; a pair of leads on the surface is adapted to deliver an electric current at a constant amperage through a selected thermally active area. Leads are also coupled at opposite sides of the thermally active area for detecting induced voltage drops occurring in the area so that the active length of the gauge is defined between voltage output leads. Changes in heat transfer to the thermally active area are isolated and determined by detecting induces changes in voltage drop.
The readout integrated circuit (ROIC) used in these devices was originally developed for use in space based infrared systems operating at deep cryogenic temperatures and was selected because of its proven tolerance to total ionizing radiation? The detectors are a 128 x 128 array of 60 pm x 60 pm pixel elements that have been anti-reflection (AR) coated to improve the response at very short wavelengths. These visible focal plane arrays were operated at -40 C (233 K). Two focal planes were characterized using cobalt-60 radiation to produce ionizing total dose damage in the VFPAs. Both operational and performance data were obtained as functions of total dose. The first device tested showed no appreciable change in responsivity or noise up to 300 krad(Si). However, at the next dose level of 600 krad(Si), the readout was non-operational due to failure in the digital circuitry. The second device was characterized to a total dose of 750 krad(Si) with no observed change in responsivity. An increase dark current was observed in both devices, and in the second device, the dark current caused an increase in noise at low irradiance at 400 krad(Si) and above. The increase in dark current was somewhat un-expected for visible PIN detectors. The median dark current increased more than two orders of magnitude at 300 krad(Si) for the first device and a factor of 350 at 750 krad(Si) for pixels near the edge for the second device. The dark current was found to be a strong function of detector bias, with pixels near the edge of the array showing a greater increase in dark current with bias than those near the center. Since the optical response was not a function of bias, it is hypothesized that the dark current is a surface effect and that the variation in dark current with location is due to a variation in pixel bias, caused by a voltage drop across the pixel common lead. As the total dose increased, the dark current and the voltage drop increased
A pulse detonation research engine (MSFC (Marshall Space Flight Center) Model PDRE (Pulse Detonation Rocket Engine) G-2) has been developed for the purpose of examining integrated propulsion and magnetohydrodynamic power generation applications. The engine is based on a rectangular cross-section tube coupled to a converging-diverging nozzle, which is in turn attached to a segmented Faraday channel. As part of the shakedown testing activity, the pressure wave was interrogated along the length of the engine while running on hydrogen/oxygen propellants. Rapid transition to detonation wave propagation was insured through the use of a short Schelkin spiral near the head of the engine. The measured detonation wave velocities were in excess of 2500 m/s in agreement with the theoretical C-J velocity. The engine was first tested in a straight tube configuration without a nozzle, and the time resolved thrust was measured simultaneously with the head-end pressure. Similar measurements were made with the converging-diverging nozzle attached. The time correlation of the thrust and head-end pressure data was found to be excellent. The major purpose of the converging-diverging nozzle was to configure the engine for driving an MHD generator for the direct production of electrical power. Additional tests were therefore necessary in which seed (cesium-hydroxide dissolved in methanol) was directly injected into the engine as a spray. The exhaust plume was then interrogated with a microwave interferometer in an attempt to characterize the plasma conditions, and emission spectroscopy measurements were also acquired. Data reduction efforts indicate that the plasma exhaust is very highly ionized, although there is some uncertainty at this time as to the relative abundance of negative OH ions. The emission spectroscopy data provided some indication of the species in the exhaust as well as a measurement of temperature. A 24-electrode-pair segmented Faraday channel and 0.6 Tesla permanent magnet assembly were then installed on Marshall Space Flight Center's (MSFC's) rectangular channel pulse detonation research engine. Magnetohydrodynamic (MHD) electrical power extraction experiments were carried out for a range of load impedances in which cesium hydroxide seed (dissolved in methanol) was sprayed into the gaseous oxygen/hydrogen propellants. Positive power extraction was obtained, but preliminary analysis of the data indicated that the plasma electrical conductivity is lower than anticipated and the near-electrode voltage drop is not negligible. It is believed that the electrical conductivity is reduced due to a large population of negative OH ions. This occurs because OH has a strong affinity for capturing free electrons. The effect of near-electrode voltage drop is associated with the high surface-to-volume ratio of the channel (1-inch by 1-inch cross-section) where surface effects play a dominant role. As usual for MHD devices, higher performance will require larger scale devices. Overall, the gathered data is extremely valuable from the standpoint of understanding plasma behavior and for developing empirical scaling laws.
In large area, low cost solar cells of any type, the contact and grid structure metallization is an important factor which has an effect on the efficiency of the solar cell and its reliability. The present investigation is concerned with aspects of solar cell efficiency. An optimized metallization design leads to minimum total power loss, which is related to a simultaneous minimization of ohmic voltage drops and of shading of the front surface of the cell by the overlaid metal. The requirements regarding the design for a low-loss metallization pattern for the front surface of large area solar cells are represented by a set of design rules listed in a table. The total shading and voltage drop on such cells can be held to about 5%. However, not every metallization process is suited for meeting the requirements of the low-cost design. The low losses can be achieved only by use of several bus lines containing a bulk conductor, such as a wire.
Emissive and Langmuir probes were used to measure plasma potential profiles, plasma densities, electron energy distributions, and plasma noise levels near a hollow cathode-based plasma contactor emitting electrons. The effects of electron emission current (100 to 1500 mA) and contactor flowrate (2 to 10 sccm (Xenon)) on these data are examined. Retarding potential analyzer (RPA) measurements showing that high energy ions generally stream from a contactor along with the electrons being emitted are also presented, and a mechanism by which this occurs is postulated. This mechanism, which involves a high rate of ionization induced between electrons and atoms flowing together from the hollow cathode orifice, results in a region of high positive space charge and high positive potential. Langmuir and RPA probe data suggests that both electrons and ions expand spherically from this potential hill region. In addition to experimental observations, a simple one-dimensional model which describes the electron emission process and predicts the phenomena just mentioned is presented and is shown to agree qualitatively with these observations. Experimental results of the first stage of bilateral cooperation with the Italian Institute of Interplanetary Space Physics (IFSI CNR) are presented. Sharp, well-defined double layers were observed downstream of a contactor collecting electrons from an ambient plasma created in the IFSI Facility. The voltage drop across these double layers was observed to increase with the current drawn from the ambient plasma. This observation, which was not as clear in previous IFSI tests conducted at higher neutral pressures, is in agreement with previous experimental observations made at both Colorado State University and NASA Lewis Research Center. Greater double layer voltage drops, multiple double layers, and higher noise levels in the region near the double layers were also observed when a magnetic field was imposed and oriented perpendicular to the line joining the contactor and simulator.
A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.