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Results for “Voltage positioning”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Voltage positioning using co-optimization of controllable grid assets in radial networks

With increasing penetration of solar PV, some distribution feeders are experiencing highly variable net-load flows and even reverse flows. To optimize distribution systems under such conditions, the scheduling of mechanical devices, such as OLTCs and capacitor banks, needs to take into account forecasted solar PV and actual grid conditions. However, these legacy switching assets are operated on a daily or hourly timescale, due to the wear and tear associated with mechanical switching, which makes them unsuitable for real-time control. Therefore, there is a natural timescale- separation between these slower mechanical assets and the responsive nature of inverter-based resources. In this paper, we present a network admissible convex formulation for holistically scheduling controllable grid assets to position voltage optimally against solar PV. An optimal hourly schedule is presented that utilizes mechanical resources to position the predicted voltages close to nominal values, while minimizing the use of inverter-based resources (i.e., DERs), making them available for control at a faster time-scale (after the uncertainty reveals itself). A convex, inner approximation of the OPF problem is adapted to a mixed-integer linear program that minimizes voltage deviations from nominal (i.e., maximizes voltage margins). Here, the resulting OPF solution respects all the network constraints and is, hence, robust against modeling simplifications. Simulation based analysis on IEEE distribution feeders validates the approach.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Time-Resolved Spectroscopy of Insulator-Metal Transitions: Exploring Low-Energy Dynamics in Strongly Correlated Systems. Final Report

Transition metal oxides (TMOs) have attracted much attention in recent years. The strong coupling between charge, spin, and orbital degrees of freedom creates novel functional properties. The research at the interplay between ferromagnetism, ferroelectricity and conductivity provides a promising way to the development of future spintronic devices. The interface characterization of multifunctional oxide heterostructures is crucial to understand deeply the magnetic response, spin injection and spin transport. In year one, we characterized optically the magnetic property with the method of magnetization-induced second-harmonic generation (MSHG), which is a sensitive technique to selectively probe the interface where the spatial inversion symmetry is broken. The interface of n-type BaTiO 3 (BTO)/La 0.67 Sr 0.33 MnO 3 (LSMO) forms a Schottky barrier and displays a good diode effect. By applying an external electric field across the sample, we observe the magnetoelectric (ME) coupling effect to modulate the interface magnetization. The voltage dependent magnetic contrast sharply vanishes at positive voltage (applied to LSMO contact) and reveals a ferromagnetic (FM)-to- antiferromagnetic (AFM) transition occurring at the interface, while the magneto-optic Kerr effect (MOKE) indicates that the bulk property is not affected. The strain mediated mechanism and ferroelectric (FE) polarization induced charge medicated mechanism are both discussed, but they do not play an important role in the observed magnetization transition. A new mechanism is proposed - the injected minority spins through strong Hund's interaction with the local magnetic moments at positive voltage weaken the double-exchange interaction of nearby Mn e g electrons, thereby reducing the ferromagnetic (FM) ordering. The dominant superexchange interaction of localized t 2g electrons finally leads to the AFM configuration. By reducing the electron carrier concentration of BTO, a positive voltage shift of the transition is observed. The oxygen richer sample with lower carrier concentration requires a higher voltage to increase the hole doping level of LSMO to induce the interfacial AFM phase. By inserting a thin (1nm) La 0.5 Ca 0.5 MnO 3 layer between BTO and LSMO, the interface magnetic response from LSMO is enhanced. In year two, a non-multiferroic heterostructure SrTiO 3 (STO)/ La 0.5 Ca 0.5 MnO 3 (LCMO)/La 0.67 Sr 0.33 MnO 3 (LSMO) was studied. In this system, the interface FM-AFM transition is observed at negative voltage. The STO layer may act as a hole-donating layer, which induces the hole transfer to LSMO making it overdoped, while the LCMO interlayer at the 0.5 hole doping level displays complicated CE type AFM phase. Thus the AFM phase is dominant at the interface and electron accumulation is required to induce the FM phase by applying a negative voltage. For oxygen rich sample, the magnetic MSHG loop reappears at high positive voltage (around +2.5 V). At high doping level (x > 0.5), LSMO exhibits A-type AFM order, consisting of AFM superexchange coupling between adjacent layers and intralayer FM double-exchange coupling. The less tensile strain of STO and LSMO due to a smaller lattice mismatch as compared to BTO would result in a weaker interlayer coupling . Thus, interfacial A-type AFM order can occur in STO/LCMO/LSMO heterostructure at high hole doping concentration. The study of ME coupling of multifunctional oxide heterostructures is definitely important to the development and performance of future spintronic devices. The results presented here regarding the interfacial magnetic transition controlled by an external electric field offer some new perspective to study the spin transport of magnetic tunnel junctions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ionic Associations and Hydration in the Electrical Double Layer of Water-in-Salt Electrolytes

Water-in-Salt-Electrolytes (WiSEs) are an exciting class of concentrated electrolytes finding applications in energy storage devices because of their expanded electrochemical stability window, good conductivity and cation transference number, and fire-extinguishing properties. These distinct properties are thought to originate from the presence of an anion-dominated ionic network and interpenetrating water channels for cation transport, which indicates that associations in WiSEs are crucial to understanding their properties. Currently, associations have mainly been investigated in the bulk, while little attention has been given to the electrolyte structure near electrified interfaces. Here, we develop a theory for the electrical double layer (EDL) of WiSEs, where we consistently account for the thermoreversible associations of species into Cayley tree aggregates. The theory predicts an asymmetric structure of the EDL. At negative voltages, hydrated Li + dominates, and cluster aggregation is initially slightly enhanced before disintegration at larger voltages. At positive voltages, when compared to the bulk, clusters are strictly diminished. Performing atomistic molecular dynamics (MD) simulations of the EDL of WiSE provides EDL data for validation and bulk data for parametrization of our theory. Validating the predictions of our theory against MD showed good qualitative agreement. Furthermore, we performed electrochemical impedance measurements to determine the differential capacitance of the studied LiTFSI WiSE and also found reasonable agreement with our theory. Overall, the developed approach can be used to investigate ionic aggregation and solvation effects in the EDL, which, among other properties, can be used to understand the precursors for solid-electrolyte interphase formation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Grid-Assisted Direct-Current Magnetron Sputtering of Titanium: Plasma Discharge Diagnostics

Grid-assisted magnetron sputtering is attractive for the deposition of ultrathick Be coatings in inertial confinement fusion (ICF) applications because it offers improved control over the plasma. Here, we investigate the plasma discharge characteristics of grid-assisted direct current magnetron sputtering with Ti as a surrogate sputter target material instead of Be. We map the magnetic field of our magnetron source assembly, study the current-voltage characteristics of both the source and the substrate, and measure the energy distributions of ions bombarding the film surface during growth. The results reveal a slightly asymmetric magnetic field of the magnetron source array and strong dependencies of the plasma discharge characteristics on both the grid and the substrate voltages. Positive grid voltage increases both target and substrate currents, increases the plasma potential, and broadens the energy distributions of ions bombarding the substrate. Grid biasing effects on the plasma discharge characteristics and substrate current can be attributed to corresponding changes to the plasma potential, while substrate biasing effects are more complex and nonlinear. Furthermore, these results demonstrate that grid-assisted deposition offers additional flexibility in controlling the deposition process for tuning properties of ultrathick films for ICF applications.

ICF targets↗
DOE OSTI2021

Interfacial Characterization of Positive Bias Voltage Degradation in PV Modules

Degradation from high system voltage is a prevailing failure mode in fielded photovoltaic modules, and the degradation mechanism is inherently dependent on the bias polarity. Here we report the effects of positive bias. Modules under positive bias demonstrated a significant photocurrent loss caused by two routes. First, delamination and discoloration of the silicon nitride layer, leading to optical loss determined by reflectance measurements. Second, chemical discoloration of the cell gridlines and encapsulant (EVA), which is linked to an electrochemical reaction at the silver electrodes. Chemical compositional analysis using X-ray photoemission spectroscopy demonstrated that the discoloration is attributed to Ag 2 S and/or Ag 2 O. Evidence of Ag ion migration from the cell grid into the encapsulant is observed after shallow depth profiling on the EVA surface. However, Ag was not detected at the EVA/glass interface, inferring limited Ag ion transport through the EVA. The source of sulfur is believed to be ambient air, which diffused into the module through the breathable backsheet.

characterization↗
DOE OSTI2020

Surface SiO 2 Thickness Controls Uniform-to-Localized Transition in Lithiation of Silicon Anodes for Lithium-Ion Batteries

Silicon is a promising anode material for lithium-ion batteries because of its high capacity, but its widespread adoption has been hampered by a low cycle life arising from mechanical failure and the absence of a stable solid–electrolyte interphase (SEI). Understanding SEI formation and its impact on cycle life is made more complex by the oxidation of silicon materials in air or during synthesis, which leads to SiO x coatings of varying thicknesses that form the true surface of the electrode. Here, the lithiation of SiO 2 -coated Si is studied in a controlled manner using SiO 2 coatings of different thicknesses grown on Si wafers via thermal oxidation. SiO 2 thickness has a profound effect on lithiation: below 2 nm, SEI formation followed by uniform lithiation occurs at positive voltages versus Li/Li + . Si lithiation is reversible, and SiO 2 lithiation is largely irreversible. Above 2 nm SiO 2 , voltammetric currents decrease exponentially with SiO 2 thickness. For 2–3 nm SiO 2 , SEI formation above 0.1 V is suppressed, but a hold at low or negative voltages can initiate charge transfer whereupon SEI formation and uniform lithiation occur. Cycling of Si anodes with an SiO 2 coating thinner than 3 nm occurs at high Coulombic efficiency (CE). If an SiO 2 coating is thicker than 3–4 nm, the behavior is totally different: lithiation at positive voltages is strongly inhibited, and lithiation occurs at poor CE and is highly localized at pinholes which grow over time. As they grow, lithiation becomes more facile and the CE increases. Pinhole growth is proposed to occur via rapid transport of Li along the SiO 2 /Si interface radially outward from an existing pinhole, followed by the lithiation of SiO 2 from the interface outward.

25 ENERGY STORAGE↗
DOE OSTI2023

Rare earth separation in voltage-gated 2D MXene membranes

The separation of rare earth elements (REEs) has historically been a complicated and expensive process, producing significant amounts of pollution. To this end, MXene membranes (MXMs) have attracted researchers' interest. It has been demonstrated that MXMs are capable of separating ions and that it is possible to precisely control the separation rate by applying a voltage to the membrane. Indeed, due to their chemical nature, MXenes show outstanding electrical conductivity. However, the effect of applied voltage on the permeation rate and separation effects of iconic species remains an intriguing area of research. In this work, we demonstrate how applying different voltages (gate voltage) to a MXM affects the permeation rate of various REE ions. Our hypothesis to explain MXMs behavior towards REE is that under negative voltage, the interlayer spacing decreases due to attraction between charged MXene surfaces and intercalated cations, increasing the separation factor between REEs. Under positive voltage, the interlayer spacing increases due to repulsion between the MXene surfaces and intercalated cations. However, we demonstrate relatively poor separation capability for REEs at 1mM starting concentration and 1.0 V applied DC voltage (separation factor ~1-3). This study demonstrates the need for future experiments to observe varied experimental conditions and chemical functionalization to determine whether MXene membranes can be an efficient platform for REE separation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Toward the Development of a High-Voltage Mg Cathode Using a Chromium Sulfide Host

Development of Mg-ion batteries as advanced electrochemical energy storage systems relies on the design and discovery of high-voltage positive electrode (cathode) materials. To date, a variety of sulfide cathodes have been reported (e.g., Mg x Mo 6 S 8 , Mg x Ti 2 S4, etc.), but the voltages of these materials are too low to prepare a high energy density Mg cell. Theoretical computations predicted that Mg x Cr 2 S 4 operating with the high-voltage Cr 3+/4+ redox couple would serve as a suitable cathode candidate, but experimental attempts to extract Mg 2+ from the lattice have been largely unsuccessful. Here, we show that reversible electrochemical activity within a thiospinel framework (AB 2 S 4 ) relies on a redox-active transition metal present in the B site; otherwise, anionic redox activity triggers decomposition of the spinel structure. Since Cr and S states are highly coupled in MgCr 2 S 4 , the Cr 3+/4+ redox couple is inaccessible so that reversible (de)intercalation of Mg 2+ cannot occur and charging leads to dissolution of the active material. These findings point to an insufficiency in the screening criteria previously used to identify MgCr 2 S 4 as a promising Mg cathode. Thus, a computable descriptor based on the electronic structure of the discharged material is proposed to predict the prevalence of cation vs anion redox and improve future surveys of potential candidates. It is unlikely that the high-voltage Cr redox couple will be accessible to oxidation in the presence of sulfur within the restrictions of a spinel framework; however, it is possible that a suitable layered Mg x CrS 2 structure could serve as a reversible high-voltage Mg cathode.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Improving the Operational Lifetime of the CEBAF Photo-Gun by Anode Biasing

The operating lifetime of GaAs-based photocathodes in DC high voltage electron photo-guns is dominated by the ionization rate of residual beamline gas molecules. In this work, experiments were performed to quantify the improvement in photocathode charge lifetime by biasing the photo-gun anode with a positive voltage, which repels ions generated downstream of the anode. The photo-cathode charge lifetime improved by almost a factor of two when the anode was biased compared to the usual grounded configuration. Simulations were performed using the particle tracking code General Particle Tracer (GPT) with a new custom element. The simulation results showed that both the number and energy of ions play a role in the pattern of QE degradation. The experiment results and conclusions supported by GPT simulations will be presented.

Yoskowitz, J. T.↗
DOE OSTI2023

Susceptibility to polarization type potential induced degradation in commercial bifacial p-PERC PV modules

Potential induced degradation (PID) is a reliability issue affecting photovoltaic (PV) modules, mainly when PV strings operate under high voltages in hot/humid conditions. Polarization-type PID (PID-p) has been known to decrease module performance quickly. PID-p can be reduced or recovered under the light in some cases, but this effect, as expected, would be less pronounced on the rear side of bifacial PV modules receiving lower irradiance. As bifacial PV modules are projected to dominate the PV market within the next 10 years, it is crucial to understand the PID-p issue in bifacial modules better. In this study, we performed indoor PID testing to induce PID-p on 14 commercial bifacial p-PERC modules with three different module constructions from three manufacturers. Here, four rounds (+ve and –ve polarities for front and rear sides) of PID testing are done at 25°C, 54% relative humidity (RH) for 168 h using the aluminum foil method. Each module side (front cell side and back cell side) is tested individually under both negative and positive voltage bias. The results show that the highest degradation of 32% in maximum power (Pmax) at standard test conditions (1000 W/m 2 ) and 51% at low irradiance (200 W/m 2 ) has been observed in some cases. Recovery under sunlight is also done, and outcomes show a near-complete recovery in Pmax. This study presents an extensive experimental methodology and a detailed analysis to systematically and simultaneously/sequentially evaluate multiple construction types of bifacial modules to the PID-p susceptibility and recovery.

14 SOLAR ENERGY↗
DOE OSTI2024

Examining Performance Loss Mechanisms in Lithium-Ion Batteries with the High-Voltage Mn-Rich Spinel Positive Electrodes

The high-voltage spinel, with the nominal composition of LiNi 0.5-x Mn 1.5+x O 4 (LNMO), could be a sustainable alternative to the layered-oxide positive electrodes used in lithium-ion batteries. However, commercial acceptance has been limited as LNMO cells display rapid performance loss during cycling. To examine reasons for this loss we prepared cells with LNMO-based positive and either graphite or lithium titanate (LTO) based negative electrodes. Our initial cells displayed high impedance and rapid impedance rise during cycling. Adding single walled carbon nanotubes in the positive lowered initial cell impedance but impedance increased during cycling because of coating delamination from the Al foil. Using a primed Al current collector solved the delamination problem: cells with this current collector showed only a small impedance rise. Regarding capacity, cells with the LTO negative showed higher initial capacities and smaller fade. Our data indicate that cell capacity retention is determined by reduction reactions at the negative electrode that lower capacity and oxidation reactions at the positive electrode that increase capacity: both types of reactions deplete the cell electrolyte during extended cycling. All things considered, species generated at high voltages, either in the electrolyte or at the LNMO electrode, drive cell capacity fade.

25 ENERGY STORAGE↗
DOE OSTI2021

Understanding interfacial chemistry of positive bias high-voltage degradation in photovoltaic modules

Photovoltaic module degradation from a high system voltage is a prevalent degradation mode in the field, where the enabling degradation mechanisms are inherently dependent on the voltage bias polarity of the installed system. In this study, the effects of positive bias on module performance are confirmed and the underlying chemical degradation processes are more thoroughly investigated to reveal different degradation pathways from those previously reported in negative bias studies. When cells are under +1000 V stress, crystalline silicon mini-modules with poly(ethylene-co-vinyl acetate) (EVA) encapsulant demonstrated a significant photocurrent loss due to EVA discoloration and delamination from increased chemical reactivity at the front-side EVA/cell metallization interface. Brown discoloration of the EVA encapsulant near the cell gridlines is linked to an electrochemical reaction at the Ag gridlines under hot and humid conditions (85 °C, 85% relative humidity). Chemical compositional analysis using X-ray photoelectron spectroscopy (XPS) confirmed that the discoloration is attributed to the formation of silver sulfide (Ag 2 S) and/or silver oxide (Ag 2 O) species at the EVA/Ag gridline interface. The subsequent migration of Ag ions from the cell gridlines into the bulk of the EVA was evident from XPS depth profiling and optical microscopy. However, the Ag signal was not detected at the EVA/glass interface, inferring limited ionic transport through the nominally 0.45 mm thick encapsulant. For the samples studied herein, the sulfur is believed by the process of elimination to come from the ambient air, diffusing into the module through the permeable polymer backsheet.

14 SOLAR ENERGY↗
DOE OSTI2024

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

Abstract Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess etch into the channel and an epitaxial regrown p‐AlGaN gate structure, an Al 0.85 Ga 0.15 N barrier/Al 0.50 Ga 0.50 N channel HEMT with a large positive threshold voltage (V TH = +3.5 V) and negligible gate leakage is demonstrated. Epitaxial regrowth of AlGaN avoids the use of gate insulators which can suffer from charge trapping effects observed in typical dielectric layers deposited on AlGaN. Low resistance Ohmic contacts (minimum specific contact resistance = 4 × 10 −6 Ω cm 2 , average = 1.8 × 10 −4 Ω cm 2 ) are demonstrated in an Al 0.85 Ga 0.15 N barrier/Al 0.68 Ga 0.32 N channel HEMT by employing epitaxial regrowth of a heavily doped, n‐type, reverse compositionally graded epitaxial structure. The combination of low‐leakage, large positive threshold p‐gates and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Influence of discharge polarity on streamer breakdown criterion of ambient air in a non-uniform electric field

Streamer breakdown of atmospheric air with non-uniform dc electric field in a needle-to-plate electrode configuration is studied using a semi-analytic model and experimental measurements. A high voltage (either positive or negative) is applied to a hollow needle with 0.51 mm outer diameter and 0.25 mm inner diameter separated from a planar ground electrode by a gap distance of 0.1–1.4 cm. Breakdown voltages are recorded for both positive and negative discharge polarities. Empirical relations between the critical avalanche size for streamer breakdown and the gap distance are proposed. Using these empirical relations, a semi-analytic model based on Meek's criterion for streamer breakdown is developed to accurately predict the measured breakdown voltages. It is found that for pd > 380 Torr cm (or d > 0.5 cm at one atmosphere) streamer breakdown of ambient air occurs at a lower applied voltage for a positively biased needle compared to that with a negatively biased needle, referred as the polarity effect. For pd < 380 Torr cm breakdown is attained at a lower applied voltage with a negatively biased needle compared to that with a positively biased needle, and breakdown mode transits from the polarity effect to the so called inverted polarity effect.

42 ENGINEERING↗
DOE OSTI2021

Impact of Charge Voltage on Factors Influencing Capacity Fade in Layered NMC622: Multimodal X-ray and Electrochemical Characterization

Ni-rich NMC is an attractive Li-ion battery cathode due to its combination of energy density, thermal stability, and reversibility. While higher delivered energy density can be achieved with a more positive charge voltage limit, this approach compromises sustained reversibility. Improved understanding of the local and bulk structural transformations as a function of charge voltage, and their associated impacts on capacity fade are critically needed. Through simultaneous operando synchrotron X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS) of cells cycled at 3–4.3 or 3–4.7 V, this study presents an in-depth investigation into the effects of voltage window on local coordination, bulk structure, and oxidation state. These measurements are complemented by ex situ X-ray fluorescence (XRF) mapping and scanning electrochemical microscopy mapping (SECM) of the negative electrode, X-ray photoelectron spectroscopy (XPS) of the positive electrode, and cell level electrochemical impedance spectroscopy (EIS). Initially, cycling between 3 and 4.7 V leads to greater delivered capacity due to greater lithium extraction, accompanied by increased structural distortion, moderately higher Ni oxidation, and substantially higher Co oxidation. Continued cycling at this high voltage results in suppressed Ni and Co redox, greater structural distortion, increased levels of transition metal dissolution, higher cell impedance, and 3× greater capacity fade.

capacity fading mechanisms↗