Search NASA⌕ Search

SEARCH · Search NASA

Results for “WBG devices”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Performance Evaluation and Loss Modeling of WBG Devices based on a Novel Double-Pulse Test Method for Current Source Inverter

Careful measurements of the power device characteristics are necessary to accurately estimate a power converter's losses and efficiency. The conventional double-pulse test (DPT) circuit is a well-known method to implement this laboratory characterization of power devices and power modules. However, the switching characteristics of a power device depend on the power electronics circuit in which it is connected as well as the power circuit's physical layout, in addition to the device's internal structure. Hence, the conventional DPT circuit configuration, which is tailored for a standard voltage-source inverter (VSI), is not well-suited for a current-source inverter (CSI). This paper demonstrates a previously-proposed CSI-based DPT measurement technique that is appropriate for normal CSI operation. The characteristics of SiC MOSFETs and series-connected SiC Schottky diodes used in a CSI are measured using this improved technique while taking temperature effects into account to yield more accurate loss predictions. The CSI losses, including the switching and conduction losses of SiC MOSFETs and SiC Schottky diodes, have been modeled using this approach. The total CSI losses and efficiency have been estimated based on the CSI DPT results and loss models.

42 ENGINEERING↗
DOE OSTI2024

Rugged WBG Devices and Advanced Electric Machines for High Power Density Automotive Electric Vehicles

This work explored two very important approaches for supporting transportation electrification and reducing dependence on imports of critical materials. In the first task, several novel electric machine architectures with low rare earth metal content were compared analytically, then experimentally to verify their performance. Rare earth metals are imported largely from China and are widely used in many clean energy systems such as wind turbines and EV motors. Reducing our dependence on this critical material is an important objective for ensuring our independence and continued economic prosperity. In the second task, a GaN based inverter for EV inverters was developed to demonstrate the suitability of that wide bandgap semiconductor device in this important application.

42 ENGINEERING↗
DOE OSTI2025

Implementation of WBG devices in circuits - Electric Drive Technologies Project (Final Technical Report)

The objective of the project is to ensure that SiC devices are reliable and rugged as required in automotive applications for operational life of 300,000 hrs and create new device designs to address various weaknesses in currently available commercial devices. OSU has worked closely with SUNY Polytechnic. OSU has carried out the reliability and ruggedness evaluations of commercial devices as well as those fabricated by SUNY Polytechnic, discussed the results with SUNY Poly, and collaborated with the PI at SUNY Poly to improve the designs with respect to reliability/ruggedness. OSU work focused on reliability/ruggedness evaluation of SiC devices by individually testing them and then evaluate them in a 10 kW, 3 phase inverter system built with a specific purpose of stressing devices using realistic drive cycles such as a 10-minute hill climb. It should be noted that the primary purpose of the 10 kW inverter is to provide a platform for stressing the SiC devices under accelerated but realistic drive conditions.

33 ADVANCED PROPULSION SYSTEMS↗
NASA NTRS2020

Update on Wide Bandgap (WBG) Device Radiation Hardness Assurance

This presentation provides an overview of recent wide bandgap device radiation hardness assurance activities at NASA and via NASA-funded grant vehicles. Devices include enhancement mode power GaN HEMTs, RF GaN HEMTs, and SiC MOSFETs and JBS diodes.

wide bandgap↗
DOE OSTI2020

Power Electronics Materials and Bonded Interfaces - Reliability and Lifetime

The emergence of wide-bandgap (WBG) devices in power electronics packages has brought significant attention to the reliability and thermal performance of the bonded interfaces. These interfaces, such as die-attach and substrate-attach, need to withstand the severe stress induced on them by the high-temperature (> 200°C) operation of the WBG devices. Sintered silver and transient liquid phase alloys are key bonded interfaces that can enable the high-temperature operation of WBG devices, however it is essential to evaluate their reliability and study the possible failure mechanisms before they can be used in power electronics packages. Sintered silver is already being adopted in commercial packages as a die-attach, but large-area substrate-attach offers additional reliability challenges. In this project, we investigate the reliability of these interface materials under accelerated thermal cycling and correlate these results with finite element simulations to develop lifetime prediction models. The failure mechanisms of these bonded interfaces are also studied.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Electric-Drive Vehicle Power Electronics Thermal Management: Current Status, Challenges, and Future Directions

Effective thermal management of traction-drive power electronics is critical to the advancement of electric-drive vehicles and is necessary for increasing power density and improving reliability. Replacing traditional silicon devices with more efficient, higher temperature, higher voltage, and higher frequency wide-bandgap (WBG) devices will enable increased power density but will result in higher device heat fluxes. Compact packaging of high-temperature WBG devices near low-temperature-rated components creates thermal management challenges that need to be addressed for future power-dense systems. This paper summarizes the thermal performance of on-road automotive power electronics thermal management systems and provides thermal performance and pumping-power metrics for select vehicles. Thermal analyses reveal that the package/conduction resistance dominates the total thermal resistance (for existing automotive systems). We model advanced packaging concepts and compare the results with existing packaging designs to quantify their thermal performance enhancements. Double-side-cooled configurations that do not use thermal interface materials are package concepts predicted to provide a low junction-to-fluid thermal resistance (compared to current packages). Dielectric-fluid-cooled concepts enable a redesign of the package to reduce the package resistance, can be implemented in single- and two-phase cooling approaches, and allow for cooling of passive components (e.g., capacitors) and bus bars.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2020

Power Electronics Thermal Management

This project conducts research to develop new power electronics thermal management technologies to increase power density, enable high WBG temperature operation, and decrease cost. One of the main challenges to achieving high power densities is associated with packaging of high-temperature (250°C) WBG devices near lower-temperature-rated components (e.g., electrical boards and capacitors). Additionally, the high junction temperatures of the WBG devices will result in large temperature gradients through the power module layers that will present reliability challenges and require higher-temperature substrates and bonding materials.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Power Electronics Thermal Management

This project conducts research to develop new power electronics thermal management technologies to increase power density, enable high WBG temperature operation, and decrease cost. One of the main challenges to achieving high power densities is associated with packaging of high-temperature (up to 250 degrees C) WBG devices near lower-temperature-rated components (e.g., electrical boards and capacitors). Additionally, the high junction temperatures of the WBG devices will result in large temperature gradients through the power module layers, which will present reliability challenges and require higher-temperature substrates and bonding materials.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Wide Bandgap Generation (WBGen): Developing the Future Wide Bandgap Power Electronics Engineering Workforce

This Final Technical Report (FTR) summarizes the work conducted at the Center for Power Electronics Systems (CPES) under the Wide-Bandgap Generation (WBGen) fellowship and traineeship program established by the Advanced Manufacturing and Technologies Office (AMMTO) of the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy (EERE) at Virginia Tech, which had as main objective to train the next generation of U.S. citizen power engineers with wide-bandgap (WBG) power semiconductor expertise, with the intent to aid in fulfilling the future workforce needs in this field. The latter was deemed of strategic importance given the fast-paced growth observed—and predicted—in the demand of this technical expertise, whose practitioners have become the enablers and executioners of the electrification transformation process that not just the U.S., but the whole world, is currently undergoing as it seeks for more effective and efficient ways to use energy. As such, the WBGen program set forth to achieve its educational goals, which in addition sought to broaden the range of WBG-based power electronics by conducting research and development on high-efficiency grid apparatus and high-efficiency electrical power systems, and to also enhance the power engineering curriculum by formalizing WBG-oriented design procedures replacing existent yet now obsolete design procedures developed for Silicon (Si) based power electronics. This effort led CPES to spearhead the development of a new major within The Bradley Electrical and Computer Engineering (ECE) Department at Virginia Tech, namely Electronic Power and Energy Systems (EPES), which coalesced power electronics and power systems courses to provide undergraduate students with a strong formation in the power engineering field, while creating a pipeline of graduate students that could pursue the WBG-based curriculum and conduct research at CPES. In all, in what is considered a true success, eight of the twenty WBGen fellows that graduated program were recruited from the ECE department undergraduate cohort. The traineeship emphasized as well, from its beginning, the partnership with industry and national laboratories, which took advantage of the successful industry consortium at CPES that has historically been formed by 80–90 power and energy companies working in close collaboration with the center. This gave WBGen fellows the accessibility and possibility to conduct internships at partner facilities during the summer months, focused solely on the evaluation, testing, and adoption of WBG devices, which were many times tightly related to their respective research work and plans. In addition, WBGen fellows conducted their main research work within the confines of research programs at CPES conducted with these industry partners, providing them with a unique opportunity to develop not just their technical expertise—while advancing their knowledge, but to also learn and practice a slew of skills needed for their professional growth. As such, the fellows tackled a variety of WBG-related research topics, from device reliability and capability aspects as well as packaging and integration, encompassing the use of advanced materials and new structures, current sharing challenges, and insulation systems, to advanced gate-drivers with integrated sensors and protection mechanisms and active current- and voltage-based control, to optimized layouts seeking to maximize the switching and power processing performance of these devices, to power processing solutions adopting Gallium-Nitride (GaN) and Silicon-Carbide (SiC) power semiconductors for a variety of applications; including radiation-hardened converters for space dc distribution systems, direct three-phase ac-to-ac power converters for aerospace systems, dc-ac inverters for automotive traction drives, high-frequency isolated dc-dc battery chargers also for heavy transportation systems, and medium-voltage dc-dc and dc-ac converters for distribution systems and future power grids. The WBGen program ultimately graduated a total of 20 power engineers, all experts on WBG-based power electronics, awarding 18 M.S. and 2 PhD degrees in the process. These fellows, all U.S. citizens, allowed CPES to increase the number of citizens students to 33 % at the peak of the program, as the traineeship made possible the recruitment of talent with more attractive graduate research assistantship (GRA) contracts. Unfortunately, the present U.S. citizen enrollment at CPES has declined back to historic levels—approximately 10 %, as the regular GRA rates are not competitive enough when compared with entry-level industry jobs. In all, WBGen fellows published a total of 7 peer-reviewed journal articles, 44 papers at international technical conferences, made 42 presentations at international technical conferences, and filed 4 invention disclosures and patent applications, which have since then been granted by the U.S. Patent and Trademark Office (USPTO). Their contribution to CPES, Virginia Tech, the United States, and the world, has been significant, and continues to yield results thanks to the exemplary career that the fellows have initiated at many of the partners of the program, which include Wolfspeed, Raytheon Technologies, Infineon, Lockheed Martin, Dominion Energy, Northrop Grumman, Rivian, Aerospace Corporation, Sandia National Laboratory, National Renewable Energy Laboratory, John Hopkins University, and Virginia Tech.

14 SOLAR ENERGY↗
DOE OSTI2021

DC Circuit Breakers: A Technology Development Status Survey

DC circuit breakers (DCCBs) play a significant role in obtaining the reliability and stability of DC power systems. Selective and fast isolating of faults minimizes the power supply outages to end electricity users and protects the power converters implemented in the DC system. During the last decades, DCCBs have been deeply investigated in industry and academia. There has been impressive progress in terms of efficiency, response time, power-density, lifetime, and electrical operating ratings. Introducing wide bandgap (WBG) devices further has motivated researchers to propose more efficient and novel topologies. This paper provides a point of reference and a background review for DCCBs from novel aspects, fulfilling absent parts in the literature. The elaborated subjects include current commutation circuitry, DCCBs trip-curves developments, newly added functions to DCCBs, as well as marketing analysis. The advancements of DCCBs are surveyed and development needs are recognized. This paper aims to identify the future research needs of DCCBs for emerging DC power systems.

42 ENGINEERING↗
DOE OSTI2020

Design, Analysis, Comparison, and Experimental Validation of Insulated Metal Substrates for High-Power Wide-Bandgap Power Modules

Direct bonded copper (DBC) substrates used in power modules have limited heat spreading and manufacturing capability due to ceramic properties and manufacturing technology. The ceramic and copper bonding is also subject to high mechanical stress due to coefficient of thermal expansion mismatch between the copper and the ceramic. For wide-bandgap (WBG) devices, it is of interest exploring new substrate technologies that can overcome some of the challenges of direct bonded copper substrates. In this technical paper, the design, analysis, and comparison of insulated metal substrates (IMSs) for high-power wide-bandgap semiconductor-based power modules are discussed. This paper starts with technical description and discussion of state-of-the-art DBC substrates with different ceramic insulators such as aluminum nitride (AlN), Al 2 O 3 , and Si 3 N 4 . Next, an introduction of IMSs and their material properties, and a design approach for SiC (silicon carbide) metal-oxide-semiconductor field-effect transistor (MOSFET)-based power modules for high-power applications is provided. The influence of dielectric thickness on the power handling capability of the substrate are also discussed. The designed IMS and DBC substrates were characterized in terms of steady-state and transient thermal performance using finite element simulation. Finally, the performance of the IMS and DBC are validated in an experimental setup under different loading and cooling temperature conditions. We report the simulation and experimental results showed that the IMS can provide high steady-state thermal performance for high-power modules based on SiC MOSFETs. Furthermore, the IMS provided enhanced transient thermal performance, which provided a reduced junction temperature when the module is operated at low fundamental output frequencies in traction drive systems.

42 ENGINEERING↗
DOE OSTI2025

Electric Drive Technologies Research: ELT223 Component Modeling, Co-Optimization, and Trade-Space Evaluation Annual Report

This project is intended to support the development of new traction drive systems that meet the targets of 100 kW/L for power electronics and 50 kW/L for electric machines with reliable operation to 300,000 miles. To meet these goals, new designs must be identified that make use of state-of-the-art and next-generation electronic materials and design methods. Designs must exploit synergies between components, for example converters designed for high-frequency switching using wide band gap (WBG) devices and ceramic capacitors. This project included: (1) a survey of available technologies; (2) investigating new technologies, that for example, reduce volume of thermal management or magnetic components; (3) the development of computer aided design tools that consider the converter volume, reliability, and electrical performance; (4) exercising the design software to evaluate performance gaps and predict the impact of certain technologies and design approaches, i.e. GaN semiconductors, ceramic capacitors, ceramic thermal management components, and select topologies; (5) building and testing hardware prototypes to validate models and concepts. The design tools enable co-optimization of the power module and passive elements and provide some design guidance. At the end of the project, new advanced computing methods, such as machine learning approaches, were considered.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2025

Unified Universal Control and Coordination of Inverter-Based Resources, and Validation for a PV + Battery Hybrid Plant

As renewable energy deployment grows, hybrid power plants (HPPs) combining photovoltaic (PV) and battery systems must evolve to offer both energy and grid stability services. These systems typically include a mix of grid-following (GFL) and grid-forming (GFM) inverters, presenting unique coordination and control challenges. This Department of Energy–funded project developed and validated a Unified Universal Control and Coordination (UUCC) framework for such PV + battery hybrid plants, enabling seamless and stable operation, including ultrafast black start, autonomous synchronization, and robust frequency and voltage regulation, under different grid conditions. The project significantly advanced the understanding of inverter-based resource (IBR) control by developing and validating three complementary system-level approaches for hybrid GFL/GFM operation: 1. A combined Virtual Resistance (VR)-based GFL and Virtual Oscillator Control (VOC)-based GFM method, where each inverter type is governed by a specialized control strategy. Together, these achieve stable, fast-response coordination, eliminating inrush current and enabling smooth black start and grid synchronization across a wide range of grid strengths. 2. A Deadbeat-based UUCC strategy, which uses discrete-time, switching-cycle-level control for both GFL and GFM inverters. This approach replaces traditional PI/PLL control with a control parameter-free, high-bandwidth framework that supports stable LVRT and instantaneous synchronization under all conditions. 3. A benchmark comparison with Siemens’ commercial GFM microgrid controller, which provided a fast baseline platform. The commercial approach decoupled v & f control was implemented on a commercial microgrid controller.The baseline commercial benchmark helped highlight superior transient response and black start performance offered by the deadbeat and VOC approaches. These technical contributions offer substantial improvements over conventional inverter control schemes, which often rely on slow phase-locked loop (PLL)-based synchronization, require careful control parameters tuning, and prone to unstable in weak grids with GFL inverters and in stiff grid with GFM inverters therefore challenging for hybrid GFL+GFM under all grid conditions. The deadbeat-based UUCC framework enables simpler, faster, and more robust operation of hybrid IBR systems using wide-bandgap (WBG) devices such as SiC power semiconductors. The rapid expansion of hybrid distributed energy resources (DERs), including residential and commercial PV-BESS installations such as Tesla Powerwall, PV with vehicle-to-grid (V2G) capability, and other integrated configurations, presents complex operational challenges for medium-voltage radial distribution feeders. These networks are subject to frequent disturbances such as faults, switching operations, rapid reclosing sequences, and feeder reconfigurations, all of which introduce dynamic stress on IBRs. In addition, planned feeder segmentation and deliberate islanding for resilience will require DERs that can autonomously perform blackstart, establish voltage and frequency references, and resynchronize with the main grid. The advanced deadbeat-based UUCC control and blackstart functionalities developed in this project directly address these requirements, enabling decentralized and autonomous operation of inverter-dominated DERs in distribution systems under a wide range of fault and reconfiguration scenarios. From a public benefit perspective, these innovations enable more reliable and cost-effective integration of renewable energy into distribution networks. The ability to autonomously black start and stabilize grids under varying grid conditions support accelerates recovery from outages and support decentralized resilient energy systems. By reducing system complexity and improving performance, this project lays critical groundwork for future inverter-dominated power grids that are clean, reliable, and accessible to all.

14 SOLAR ENERGY↗
DOE OSTI2021

SiC and GaN Devices With Cryogenic Cooling

This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.

42 ENGINEERING↗
DOE OSTI2021

Thermal and Reliability Characterization of an Epoxy Resin-Based Double-Side Cooled Power Module

Wide-Band Gap (WBG) power devices have become a promising option for high-power applications due to the superior material properties over traditional Silicon. To not limit WBG devices’ mother nature, a rugged and high-performance power device packaging solution is necessary. This study proposes a Double-Side Cooled (DSC) 1.2 kV half-bridge power module having dual epoxy resin insulated metal substrate (eIMS) for solving convectional power module challenges and providing a cost-effective solution. The thermal performance outperforms traditional Alumina (Al2O3) Direct Bonded Copper (DBC) DSC power module due to moderate thermal conductivity (10 W/mK) and thin (120 mm) epoxy resin composite dielectric working as the IMS insulation layer. This novel organic dielectric can withstand high voltage (5 kVAC @ 120 μm) and has a Glass Transition Temperature (Tg) of 300°C, which is suitable for high-power applications. In the thermal-mechanical modeling, the organic DSC power module can pass the thermal cycling test over 1,000 cycles by optimizing the mechanical properties of the encapsulant material. In conclusion, this article not only proposes a competitive organic-based power module but also a methodology of evaluation for thermal and mechanical performance.

42 ENGINEERING↗