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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

The role of the ionosphere in coupling upstream ULF wave power into the dayside magnetosphere

A series of recent studies of Pc 3 magnetic pulsations in the dayside outer magnetosphere has given new insights into the possible mechanisms of entry of ULF wave power into the magnetosphere from a bow shock-related upstream source. A comparison is made of data from two 10-hour intervals on successive days in April 1986 and then a possible model for transmission of pulsation signals from the magnetosheath into the dayside magnetosphere is presented. Clear interplanetary magnetic field magnitude control of dayside resonant harmonic pulsations and band-limited very high latitude pulsations, as well as pulsation-modulated precipitation of what appear to be magnetosheath/boundary layer electrons are shown. It is believed that this modulated precipitation may be responsible for the propagation of upstream wave power in the Pc 3 frequency band into the high-latitude ionosphere, from whence it may be transported throughout the dayside outer magnetosphere by means of an 'ionospheric transistor'. In this model, modulations in ionospheric conductivity caused by cusp/cleft precipitation cause varying ionospheric currents with frequency spectra determined by the upstream waves; these modulations will be superimposed on the Birkeland currents, which close via these ionospheric currents. Modulated region 2 Birkeland currents will in turn provide a narrow-band source of wave energy to a wide range of dayside local times in the outer magnetosphere.

Engebretson, M. J.↗
NASA NTRS1972

Limitations on millimeter-wave power generation with spiraling electron beams.

A study is made of the suitability of the interaction between a thin, solid, spiraling electron beam of 5-15-kV energy and a microwave cavity, for the purpose of generating watts of CW millimeter-wave power. The effect of finite energy spread in the electron beam is considered both theoretically and experimentally. Measured results are given for a prototype device operating at 9.4 GHz. Power outputs of 5 W and electronic efficiencies near 2% have been obtained. The data agree well with the theory, subject to some ambiguity in the energy-distribution parameters. The performance is strongly limited by the energy spread in the beam.

Kulke, B.↗
NASA NTRS1990

A correlative investigation of the propagation of ULF wave power through the dayside magnetosphere

Three different ULF wave phenomena (azimuthally polarized Pc 3 pulsations, radially polarized Pc 4 pulsations, and solitary Pc 5 pulsations related to solar wind pressure pulses) were studied. The main problems covered are: (1) how do magnetospheric Pc 3-4 pulsations, which appear to originate in the solar wind, enter the magnetosphere, and how is this wave energy transported throughout the magnetosphere once it enters; (2) what is the ULF response of the outer dayside magnetosphere to solar wind pressure pulses; and (3) how do Pc 3-4 pulsations modulate ELF-VLF emissions in the dayside magnetosphere.

Engebretson, Mark J.↗
NASA NTRS1991

Experimental results using active control of traveling wave power flow

Active structural control experiments conducted on a 24-ft pinned-free beam derived feedback compensators on the basis of a traveling-wave approach. A compensator is thus obtained which eliminates resonant behavior by absorbing all impinging power. A causal solution is derived for this noncausal compensator which mimics its behavior in a given frequency range, using the Wiener-Hopf. This optimal Wiener-Hopf compensator's structure-damping performance is found to exceed any obtainable by means of rate feedback. Performance limitations encompassed the discovery of frequencies above which the sensor and actuator were no longer dual and an inadvertent coupling of the control hardware to unmodeled structure torsion modes.

Miller, David W.↗
NASA NTRS1993

Focusing of Alfvenic wave power in the context of gamma-ray burst emissivity

Highly dynamic magnetospheric perturbations in neutron star environments can naturally account for the features observed in gamma-ray burst spectra. The source distribution, however, appears to be extragalactic. Although noncatastrophic isotropic emission mechanisms may be ruled out on energetic and timing arguments, MHD processes can produce strongly anisotropic gamma rays with an observable flux out to distances of about 1-2 Gpc. Here we show that sheared Alfven waves propagating along open magnetospheric field lines at the poles of magnetized neutron stars transfer their energy dissipationally to the current sustaining the field misalignment and thereby focus their power into a spatial region about 1000 times smaller than that of the crustal disturbance. This produces a strong (observable) flux enhancement along certain directions. We apply this model to a source population of 'turned-off' pulsars that have nonetheless retained their strong magnetic fields and have achieved alignment at a period of approximately greater than 5 sec.

Fatuzzo, Marco↗
NASA NTRS1968

Mm-wave power meter mount

E-band thermistor mount and a technique for adjusting a temperature compensating thermistor to provide an electrically balanced bridge are used for measuring RF power in the mm-wavelength. The mount is relatively insensitive to temperature effects that cause measurement errors in single ended circuits.

Mullen, D. L.↗
NASA NTRS1983

On the theory of self-focusing of powerful wave beams in nonhomogeneous media

The stationary self-focusing of the Gauss wave beam is considered in a nonhomogeneous medium in the case of local nonlinearity. Equations of the aberrationless approximation for the beam width, the field on the beam axis and the refraction factor are integrated on a computer. Self-focusing in dependence of the nonlinearity level and initial divergence, the dissipation, the length of nonhomogeneity of the dielectric permittivity nondisturbed by a beam, and the diffraction parameter are investigated.

Yerokhin, N. S.↗
NASA NTRS1988

Microwave and millimeter-wave power generation in silicon carbide avalanche devices

Numerical simulations were performed to investigate the typical power-generating capabilities of SiC IMPATT diodes. Using available material parameters, SiC double-drift IMPATT diodes were simulated at 10, 35, 60, and 94 GHz, and the operating characteristics of these devices were compared to those of Si and GaAs devices. Compared to the Si and GaAs IMPATT performances in the pulsed mode, the SiC IMPATT performance was found to be far superior. The performance of SiC devices in the CW mode was also superior to that of GaAs devices, especially at lower frequencies. At a high frequency (94 GHz), the performance of the SiC device was found to be comparable to that of Si devices.

Mehdi, I.↗
NASA NTRS1989

Microwave and millimeter-wave power generation in silicon carbide (SiC) IMPATT devices

There are two points that should be noted. First, in the thermal resistance calculations it is assumed that the device is operating at 773 K while the results of the room temperature simulations are used. This was done because there is not enough information to correctly predict the material parameters at 773 K. Since, in general, device performance degrades with increasing temperature, the cw results are perhaps a bit optimistic. Second, the electric field in these structures gets extremely high and there might be some possibility of tunneling. This was not incorporated into the simulation. Again, this could result in different device operating conditions.

Mehdi, I.↗
NASA NTRS1990

Ultra-low-frequency wave power in the magnetotail lobes. I - Relation to substorm onsets and the auroral electrojet index

Time-series observations of the magnetotail-lobe magnetic field have been Fourier analyzed to compute the frequency-weighted energy density Pfz in the range 1-30 mHz. Pfz is generally observed in the range 0.0001-0.01 gamma-squared Hz with a mean value of 0.0012 during substorm growth phases and 0.001 in the comparison intervals. No strong correlation of Pfz is found with the auroral electrojet index in either set of intervals, but during substorm growth phases Pfz may vary by an order of magnitude over time scales of 30 min, with a tendency for higher power levels to occur later in the growth phase. Increases in Pfz precede by about 10 min localized expansive phase activity observed in individual magnetograms.

Smith, R. A.↗
NASA NTRS1992

Progress on single barrier varactors for submillimeter wave power generation

Theoretical work on Single Barrier Varactor (SBV) diodes, indicate that the efficiency for a multiplier has a maximum for a considerably smaller capacitance variation than previously thought. The theoretical calculations are performed, both with a simple theoretical model and a complete computer simulation using the method of harmonic balance. Modeling of the SBV is carried out in two steps. First, the semiconductor transport equations are solved simultaneously using a finite difference scheme in one dimension. Secondly, the calculated I-V, and C-V characteristics are input to a multiplier simulator which calculates the optimum impedances, and output powers at the frequencies of interest. Multiple barrier varactors can also be modeled in this way. Several examples on how to design the semiconductor layers to obtain certain characteristics are given. The calculated conversion efficiencies of the modeled structures, in a multiplier circuit, are also presented. Computer simulations for a case study of a 750 GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes. InAs and InGaAs SBV diodes have been fabricated and their current vs. voltage characteristics are presented. In the InAs diode, was the large bandgap semiconductor AlSb used as barrier. The InGaAs diode was grown lattice matched to an InP substrate with InAlAs as a barrier material. The current density is greatly reduced for these two material combinations, compared to that of GaAs/AlGaAs SBV diodes. GaAs based diodes can be biased to higher voltages than InAs diodes.

Nilsen, Svein M.↗