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At least 19 records

Bent crystal X-ray topography

A television X-ray topographic camera system was constructed. The system differs from the previous system in that it incorporates the X-ray TV imaging system and has a semi-automatic wafer loading system. Also the X-ray diffraction is in a vertical plane. This feature makes wafer loading easier and makes the system compatible with any commercial X-ray generating system. Topographs and results obtained from a study of the diffraction contrast variation with impurity concentration for both boron implanted and boron diffused silicon are included.

Parker, D. L.↗

X-ray topography study of complex silicon microcircuits

The correlation between the yield of silicon microcircuits wafers versus defects observed in X-ray topographs produced by a high speed curved wafer X-ray topographic camera was investigated. Most of the topographs were made after final wafer probe. Results indicated that most high volume silicon wafer processing does not need X-ray topography as a routine process control. It is further indicated that in changing any existing process or developing a new process the technique can be of significant benefit.

Parker, D. L.↗

X-ray topography as a process control tool in semiconductor and microcircuit manufacture

A bent wafer camera, designed to identify crystal lattice defects in semiconductor materials, was investigated. The camera makes use of conventional X-ray topographs and an innovative slightly bent wafer which allows rays from the point source to strike all portions of the wafer simultaneously. In addition to being utilized in solving production process control problems, this camera design substantially reduces the cost per topograph.

Parker, D. L.↗

Cameras for semiconductor process control

The application of X-ray topography to semiconductor process control is described, considering the novel features of the high speed camera and the difficulties associated with this technique. The most significant results on the effects of material defects on device performance are presented, including results obtained using wafers processed entirely within this institute. Defects were identified using the X-ray camera and correlations made with probe data. Also included are temperature dependent effects of material defects. Recent applications and improvements of X-ray topographs of silicon-on-sapphire and gallium arsenide are presented with a description of a real time TV system prototype and of the most recent vacuum chuck design. Discussion is included of our promotion of the use of the camera by various semiconductor manufacturers.

Porter, W. A.↗

X-ray topographic observations of magnetic domains in Czochralski-grown nickel single crystals in anomalous transmission geometry

The anomalous transmission effect has been observed in nickel single crystals grown by the Czochralski technique. Sample crystals prepared for X-ray topography are 1.5 to 2.5 cm in diameter and thicker than 0.4 mm; the product of the ordinary linear absorption coefficient and thickness ranges from 17 to 45 for Cu K-alpha radiation. Topographs taken with an asymmetric-crystal-topographic (ACT) camera have revealed extremely straight line images and rectangular arrangements of short line-segment images, along with the images of crystal imperfections. The line images change their arrangement upon application of magnetic fields. These images are attributed to magnetic domains in the interior of crystals. The formation of domain walls near the crystal surface is also observed and distinguished clearly from magnetic domains in the bulk with the use of the ACT camera.

Kuriyama, M.↗

The effects of titanium impurities in N/+//P silicon solar cells

Microscopic and electrical measurements were performed to explain the degradation mechanisms associated with the presence of titanium impurities in silicon. The measurements included X-ray topography, transmission electron microscopy, and deep level transient spectroscopy, before and after processing. The results indicated the presence of TiO2 precipitates, the density of which increased after phosphorus diffusion. A majority carrier trapping level was observed in the wafers before processing. It was concluded that 10% of the Ti in the N(+)/P silicon solar cells formed electrically active centers which caused degradation of the cell junction. 14% of the remaining Ti precipitated out as TiO2, forming electrically active defects, which also caused junction degradation.

Salama, A. M.↗

Liquid encapsulated Czochralski growth of low dislocation GaAs

The availability of high-quality, large-diameter GaAs substrates is key to the successful development and production of high-speed GaAs devices and high-efficiency GaAs solar cells. The liquid encapsulated Czochralski (LEC) technique has provided a means for producing large-diameter GaAs. Progress in improving the LEC growth process which has resulted in 3-inch GaAs crystals with exceptionally low dislocation densities and reduced propensity for twinning is reported. Undoped, semi-insulating GaAs ingots were grown in a Melbourn high-pressure LEC system. The effects of seed perfection, seed necking, cone angle, melt stoichiometry, ambient pressure, thickness of the B2O3 encapsulating layer, and diameter control on the dislocation density were investigated. The material was characterized by preferential etching and X-ray topography. It is shown that 3-inch diameter substrates can be produced with dislocation densities as low as 6000 per sq cm through proper selection and control of growth parameters. Also, the incidence of twinning can be reduced significantly by growing from slightly As-rich melts.

Kirkpatrick, C. G.↗

High-purity silicon crystal growth

Crystal growth parameter effects on minority carrier lifetime and solar cell efficiencies were investigated using high purity techniques such as float zoning. Study objectives include the following: (1) optimize dopants and minority carrier lifetime in FZ material for high efficiency silicon solar cell applications; (2) improve the understanding of lifetime degradation mechanisms (point defects, impurities, thermal history, surface effects, etc.), and (3) crystallographic defect characterization of float zone and ribbon crystals via X-ray topography.

Ciszek, T.↗

High-purity silicon crystal growth investigations

The study of silicon sheet material requirements for high efficiency solar cells is reported. Research continued on obtaining long lifetime single crystal float zone silicon and on understanding and reducing the mechanisms that limit the achievement of long lifetimes. The mechanisms studied are impurities, thermal history, point defects, and surface effect. The lifetime related crystallographic defects are characterized by X-ray topography and electron beam induced current.

Ciszek, T. F.↗

The study of X-ray scattering to determine surface topography of smooth surfaces

The scattering of X-rays from state-of-the-art polished mirrors is discussed with reference to the requirements of the Advanced X-ray Astrophysics Facility telescope. An experimental set-up is described which allows information to be obtained with subarcsecond resolution. A sample of the data obtained is presented along with a possible theoretical model for its interpretation.

Williams, A. C.↗

Fluid flow effects on crystalline perfection

Optimum solidification parameters for the production of highly perfect copper crystals by Czochralski growth are sought along with the documentation of crystal imperfections under various growth conditions. X-ray techniques which do not in their application produce defects and which allow the characterization of imperfections in single crystals are chosen to assess crystal perfection. The X-ray techniques employed ranged from ordinary Laue photography through Borrmann topography to double-crystal scanning diffractometry, thus allowing crystals with a wide variation in perfection to be studied. As a set of controllable solidification parameters, the rotation of the seed and of the melt and the diameter of the bottleneck are chosen. X-ray diffraction topographs are analyzed along with the data obtained from rocking curve measurements. Tables of growth conditions and quantitative data of rocking curve widths are presented.

Kuriyama, M.↗

Fracture surface analysis in composite and titanium bonding: Part 1: Titanium bonding

Fractured lap shear Ti 6-4 adherends bonded with polyphenyquinoxaline (PPQ) and polysulfone were analyzed. The effects of adherend pretreatment, stress level, thermal aging, anodizing voltage, and modified adhesive of Ti 6-4 adherend bonded with PPQ on lap shear strength were studied. The effect of adherend pretreatment on lap shear strength was investigated for PS samples. Results of scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) used to study the surface topography and surface composition are also discussed.

Sanderson, K. A.↗

Photoenhanced thermal oxidation of InP

The growth rate of laser-photoenhanced thermally grown native oxides of InP in a N2O ambient and its dependence on growth condition are presented. Increased laser power, substrate temperature, and N2O pressure are observed to increase the growth rate. The topography and the composition of these oxides have been studied using secondary electron microscopy and X-ray photoemission spectroscopy, respectively. The oxide layers contain In2O3 and a phosphate, probably InPO4. The enhanced growth appears to be caused by both excited oxidizing species and a photon-enhanced surface reaction.

Fathipour, M.↗

A fundamental study of the sticking of insect residues to aircraft wings

The aircraft industry has long been concerned with the increase of drag on airplanes due to fouling of the wings by insects. The present research studied the effects of surface energy and surface roughness on the phenomenon of insect sticking. Aluminum plates of different roughnesses were coated with thin films of polymers with varying surface energies. The coated plates were attached to a custom jig and mounted on top of an automobile for insect collection. Contact angle measurements, X-ray photoelectron spectroscopy and specular reflectance infrared spectroscopy were used to characterize the surface before and after the insect impact experiments. Scanning electron microscopy showed the topography of insect residues on the exposed plates. Moments were calculated in order to find a correlation between the parameters studied and the amount of bugs collected on the plates. An effect of surface energy on the sticking of insect residues was demonstrated.

Eiss, N. S., Jr.↗

Some observations on the geology of the Apollo 15 landing site

High resolution (panoramic) and high geometric fidelity (metric) photos were taken from orbit of the lunar landing sites. Gamma ray and X-ray fluorescence spectroscopic measurement were taken to determine regional chemical composition of the Moon. Distinctive features of the Apennine Bench Formation are described. The structurally controlled topography of the Apennine Bench Formation is suggested of a lava channel or collapsed lava tube.

Swann, G. A.↗

Effect of surface topography on structural growth of thick sputtered films

Primarily thick sputtered S-Monel, silver, and 304 stainless steel coatings were deposited on mica, glass, and metal substrates with various surface finishes to investigate the structural growth of the coating by scanning electron microscopy. Compositional changes within the coating were analyzed by X-ray dispersion microscopy. Defects in the surface finish act as preferential nucleation sites and form isolated and complex nodules and various surface overgrowths in the coating. These nodules do not disappear after full annealing. Further, they have undesirable effects on mechanial properties; cracks are initiated at the nodules when the coating is stressed by mechanical forces. These effects are illustrated by micrographs. Nodular growth within a coating can be minimized or eliminated by reducing the surface roughness.

Spalvins, T.↗

Surface analysis of graphite fiber reinforced polyimide composites

Several techniques have been used to establish the effect of different surface pretreatments on graphite-polyimide composites. Composites were prepared from Celion 6000 graphite fibers and the polyimide LARC-160. Pretreatments included mechanical abrasion, chemical etching and light irradiation. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) were used in the analysis. Contact angle of five different liquids of varying surface tensions were measured on the composites. SEM results showed polymer-rich peaks and polymer-poor valleys conforming to the pattern of the release cloth used durng fabrication. Mechanically treated and light irradiated samples showed varying degrees of polymer peak removal, with some degradation down to the graphite fibers. Minimal changes in surface topography were observed on concentrations of surface fluorine even after pretreatment. The light irradiation pretreatment was most effective at reducing surface fluorine concentrations whereas chemical pretreatment was the least effective. Critical surface tensions correlated directly with the surface fluorine to carbon ratios as calculated from XPS.

Messick, D. L.↗

Effect of longitudinal surface finish on elastohydrodynamic lubrication

The effect of longitudinal-lay surface finish on the elastohydrodynamic film thickness and the percentage of film between rolling disks in contact were evaluated using a rolling disk apparatus. Film thickness was measured by transmitted X-rays, and percentage of film was monitored by an alternating-current continuity circuit. Disk finish was varied on both the crowned upper disk and the cylindrical lower disk. A type-2 ester and a synthetic paraffinic oil were used as lubricants. It was shown that the roughness with longitudinal lay has a deleterious effect on both film thickness and percentage of film. Measured film thicknesses for the two lubricants were comparable at equivalent test conditions. The percentage of film where a change in surface topography was observed was approximately 20 percent for the synthetic paraffinic oil and 10 percent for the type-2 ester.

Dow, T. A.↗