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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

AlxGa1-xAs Single-Quantum-Well Surface-Emitting Lasers

Surface-emitting solid-state laser contains edge-emitting Al0.08Ga0.92As single-quantum-well (SQW) active layer sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs, includes etched 90 degree mirrors and 45 degree facets to direct edge-emitted beam perpendicular to top surface. Laser resembles those described in "Pseudomorphic-InxGa1-xAs Surface-Emitting Lasers" (NPO-18243). Suitable for incorporation into optoelectronic integrated circuits for photonic computing; e.g., optoelectronic neural networks.

Kim, Jae H.↗
NASA NTRS1991

High-Gain AlxGa1-xAs/GaAs Transistors For Neural Networks

High-gain AlxGa1-xAs/GaAs npn double heterojunction bipolar transistors developed for use as phototransistors in optoelectronic integrated circuits, especially in artificial neural networks. Transistors perform both photodetection and saturating-amplification functions of neurons. Good candidates for such application because structurally compatible with laser diodes and light-emitting diodes, detect light, and provide high current gain needed to compensate for losses in holographic optical elements.

Kim, Jae-Hoon↗
NASA NTRS1991

Alternative AlxGa1-xAs/GaAs Transistors For Neural Networks

Further development efforts yield alternative version of transistors described in "High-Gain AlxGa1-xAs/GaAs Transistors For Neural Networks" (NPO-18101). Efforts focused on determining effects of various aspects of design and of fabrication processes upon leakage currents and on current gain.

Kim, Jae-Hoon↗
NASA NTRS1992

Pseudomorphic InxGa1-xAs Surface-Emitting Lasers

Solid-state lasers of new type contain pseudomorphic In0.15Ga0.85As single-quantum-well (SQW) active layers sandwiched between thinner layers of GaAs that, in turn, are sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs. Lasers emit edgewise as other solid-state lasers, or made to emit perpendicularly to their surfaces by use of integrated 45 degree beam deflectors that deflect edge-emitted light. Suitable for incorporation into optoelectronic integrated circuits implementing optical interconnection and parallel processing of data.

Kim, Jae H.↗
NASA NTRS1993

Very Long Wavelength InxGal-xAs/GaAs Quantum Well Infrared Photodetectors

We demonstrate the first long-wavelength (=20) quantum well infrared photodetector using non-lattice matched InGaAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system.

long-wavelength quantum non-lattice GaAs detectors↗
NASA NTRS1990

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

Dinetta, L. C.↗
NASA NTRS1985

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Li, S. B.↗
NASA NTRS1986

Optical constants of GaAs-AlGaAs superlattices and multiple quantum wells

The optical properties of GaAs-Al sub x Ga sub 1-xAs superlattices are calculated as a function of the frequency and superlattice structure. The comutations are performed using a partition method which combines the vectors k.p method with the pseudopotential technique. The influence of the super-structure on the electronic properties of the systems is accounted for by appropriate quantization conditions. The anisotropy and structure dependence of the dielectric constant result mainly from the contribution of the gamma region while the contributions of the other regions of the Brillouin zone are rather insensitive to the superlattice structure. The superlattice index of refraction values are shown to attain maxima at the various quantized transition energies, where for certain structures, the difference between the refractive indices of the superlattices and its corresponding Al sub x Ga sub 1-xAs alloy can be as large as 2%. In general results are in good agreement with the experimental data.

Kahen, K. B.↗
NASA NTRS1991

The development and evaluation of an alternative powder prepregging technique for use with LaRC-TPI/graphite composites

An alternative powder prepregging method for use with LaRC-TPI (a thermoplastic polyimide)/graphite composites is investigated. The alternative method incorporates the idea of moistening the fiber prior to powder coating. Details of the processing parameters are given and discussed. The material was subsequently laminated into small coupons which were evaluated for processing defects using electron microscopy. After the initial evaluation of the material, no major processing defects were encountered but there appeared to be an interfacial adhesion problem. As a result, prepregging efforts were extended to include an additional fiber system, XAS, and a semicrystalline form of the matrix. The semicrystalline form of the matrix was the result of a complex heat treating cycle. Using scanning electron microscopy (SEM), the fiber/matrix adhesion was evaluated in these systems relative to the amorphous/XAS coupons. Based on these results, amorphous and semicrystalline/AS-4 and XAS materials were prepregged and laminated for transverse tensile testing. The results of these tests are presented, and in an effort to obtain more information on the effect of the matrix, remaining semicrystalline transverse tensile coupons were transformed back to the amorphous state and tested. The mechanical properties of the transformed coupons returned to the values observed for the original amorphous coupons, and the interfacial adhesion, as observed by SEM, was better than in any previous sample.

Ogden, Andrea L.↗
NASA NTRS1994

X-Ray Absorption Spectroscopy in High Temperature Oxidation of Metals and Alloys

An experimental technique is described that allows for the joint study of the kinetics and of the oxide structure during the high temperature oxidation of metal surfaces. Oxygen is supplied at the metal through an electrochemical oxygen pump and the oxygen pressure, at the metal surface, is measured during oxidation by a YSZ (yttria stabilized zirconia) oxygen sensor. XAS (x-ray absorption spectroscopy) is performed in fluorescence mode at the cation K edge and after each oxidation step. An appropriate analysis of the XAS spectra could provide information on both the oxidation kinetics and oxide structure. Experimental data on the high temperature oxidation of nickel, cobalt, and Fe(64%)Ni(36%) alloy, at low oxygen pressure, are reported and analyzed according to the proposed data reduction. These results indicate the presented technique to be particularly suitable for studying the hot corrosion of oxide film too thick for common surface spectroscopy (AUGER, ESCA) and too thin for conventional thermogravimetric technique.

Daniele Gozzi↗
NASA NTRS1978

The recombination velocity at III-V compound heterojunctions with applications to Al (x) Ga(1-x)As-GaAs(1-y)Sb(y)

Interface recombination velocity in AlxGa1-xAs-GaAs and A10.85 Ga0.15As-GaAs1-ySby heterojunction systems was studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAsSb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates.

Kim, J. S.↗
NASA NTRS1986

High-Quality, Thin-Film Germanium Single Crystals

Germanium (Ge) has crystallographic characteristics similar to GaAs and compatible with heteroepitaxial growth of GaAs. Further, since efficient heteroface cells already grown on thick Ge single crystals, Ge is excellent substrate candidate for thin-film cells. Required is single-crystal Ge thin film. Method developed for epitaxially growing highquality 10-um Ge thin films on ,100. NaCl substrates by plasma-enhanced chemical-vapor deposition (PECVD) and then separating Ge films by either melt-away or differential-thermal shear stress techniques. Free-standing films used for growth of AlxGa1-xAs/GaAs heteroface cells by similar techniques.

Outlaw, R. A.↗
NASA NTRS1986

Improved Waveguide Laser Array

Improved structure for integrated array of AlxGa1-xAs diode lasers causes array to oscillate predominantly in fundamental supermode (with all units at same phase), thereby producing intense, narrow light beam. New structure differs from older ones in that gain in spaces between laser channels is approximately equal to gain in channels.

Mukai, S.↗
NASA NTRS1987

Interfacial adhesion of carbon fibers

Relative adhesion strengths between AS4, AS1, and XAS carbon fibers and thermoplastic polymers were determined using the embedded single filament test. Polymers studied included polycarbonate, polyphenylene oxide, polyetherimide, polysulfone, polyphenylene oxide blends with polystyrene, and polycarbonate blends with a polycarbonate polysiloxane block copolymer. Fiber surface treatments and sizings improved adhesion somewhat, but adhesion remained well below levels obtained with epoxy matrices. An explanation for the differences between the Hercules and Grafil fibers was sought using X ray photon spectroscopy, wetting, scanning electron microscopy and thermal desorption analysis.

Bascom, Willard D.↗
NASA NTRS1987

Surface characterization in composite and titanium bonding: Carbon fiber surface treatments for improved adhesion to thermoplastic polymers

The effect of anodization in NaOH, H2SO4, and amine salts on the surface chemistry of carbon fibers was examined by X-ray photoelectron spectroscopy (XPS). The surfaces of carbon fibers after anodization in NaOH and H2SO4 were examined by scanning transmission electron microscopy (STEM), angular dependent XPS, UV absorption spectroscopy of the anodization bath, secondary ion mass spectrometry, and polar/dispersive surface energy analysis. Hercules AS-4, Dexter Hysol XAS, and Union Carbide T-300 fibers were examined by STEM, angular dependent XPS, and breaking strength measurement before and after commercial surface treatment. Oxygen and nitrogen were added to the fiber surfaces by anodization in amine salts. Analysis of the plasmon peak in the carbon 1s signal indicated that H2SO4 anodization affected the morphological structure of the carbon fiber surface. The work of adhesion of carbon fibers to thermoplastic resins was calculated using the geometric mean relationship. A correlation was observed between the dispersive component of the work of adhesion and the interfacial adhesion.

Devilbiss, T. A.↗
NASA NTRS1988

Surface and interfacial properties of carbon fibers

Differences in the adhesion of three carbon fibers (Hercules AS1 and AS4, and Hysol-Grafil XAS) to polycarbonate (PC) have been shown to correlate with the absorptivity of PC on the three fiber types. The absorptivity (energy of absorption) was determined using retention time liquid chromatography and the adhesion was measured using the single embedded filament tensile test. A correlation was also found between adhesion strength and the O/N surface element ratio using XPS analysis. The chemical details for these correlations have not yet been determined. A study of filament fracture statistics has been initiated using single and multiple embedded filament tensile tests. Filament fracture has been measured as a function of strain and for different interfiber distances. Preliminary results indicate that fiber fracture is a discontinuous function of increasing strain and may in fact occur at discrete strain intervals. Fiber-fiber interaction effects on fiber fracture have been found for interfiber distances of up to two to three fiber diameters.

Bascom, W. D.↗
NASA NTRS1991

High-Power AlGaAs Quantum-Well Lasers On Si Substrates

AlxGa1-xAs lasers of graded-index-of-refraction, separate-confinement-heterostructure, single-quantum-well type fabricated on silicon substrates by migration-enhanced molecular-beam epitaxy followed by metalorganic vapor-phase epitaxy. They are intermediate products of continuing effort to develop low-threshold-current, high-efficiency lasers for parallel optical interconnections between large-scale optoelectronic integrated circuits.

Kim, Jae-Hoon↗