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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Nuclear Data Sheets for A = 71

The evaluated spectroscopic data are presented for experimentally known nuclides of mass 71 (Mn,Fe,Co,Ni,Cu,Zn,Ga,Ge,As,Se,Br,Kr). Excited-state data are nonexistent for {sup 71}Mn, {sup 71}Fe, {sup 71}Co and {sup 71}Kr. Significant new data have been added since the last evaluation of A=71 nuclides by M. Bhat (1993Bh02). Excited states are now known in {sup 71}Ni and {sup 71}Cu, and enhanced information about high-spin excitations is available for {sup 71}Ga, {sup 71}As and {sup 71}Br. The decay schemes of radioactive isotopes {sup 71}Mn and {sup 71}Fe are not known at all, and those for {sup 71}Co, {sup 71m}Ni and {sup 71}Kr are not known well. For the decay of {sup 71}Cu, {sup 71g}Ni, and {sup 71}Br, extensive data are available, but in the opinion of the evaluators the decay schemes still seem incomplete. This work supersedes earlier full evaluations of A=71 published by 1988Bh01, 1979Ke06 and 1973Al33, and the last one published in 'update' mode by 1993Bh02.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2017

Characterization of the zinc-induced Shank3 interactome of mouse synaptosome

Highlights: • The synaptosomal Shank3 complexes incubated with different ZnCl{sub 2} concentrations were analyzed by mass spectrometry. • The 71 proteins that specifically interacted with Shank3 under extra ZnCl{sub 2} conditions were identified. • The zinc-induced Shank3 interactome is associated with mitochondria and brain disorders. Variants of the SHANK3 gene, which encodes a core scaffold protein of the postsynaptic density of excitatory synapses, have been causally associated with numerous brain disorders. Shank3 proteins directly bind zinc ions through their C-terminal sterile α motif domain, which enhances the multimerization and synaptic localization of Shank3, to regulate excitatory synaptic strength. However, no studies have explored whether zinc affects the protein interactions of Shank3, which might contribute to the synaptic changes observed after zinc application. To examine this, we first purified Shank3 protein complexes from mouse brain synaptosomal lysates that were incubated with different concentrations of ZnCl{sub 2}, and analyzed them with mass spectrometry. We used strict criteria to identify 71 proteins that specifically interacted with Shank3 when extra ZnCl{sub 2} was added to the lysate. To characterize the zinc-induced Shank3 interactome, we performed various bioinformatic analyses that revealed significant associations of the interactome with subcellular compartments, including mitochondria, and brain disorders, such as bipolar disorder and schizophrenia. Together, our results showing that zinc affected the Shank3 protein interactions of in vitro mouse synaptosomes provided an additional link between zinc and core synaptic proteins that have been implicated in multiple brain disorders.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2014

β Decay in the Region of Neutron-deficient {sup 69,70,71}Kr

Decay spectroscopy was performed for neutron-deficient nuclei ranging from zinc to krypton with isospin −3/2 ≤T{sub z}≤0. Measurements of correlated β-delayed protons allowed us to determine the isobaric analog states fed from the decay of {sup 65}Se and {sup 69}Kr, constraining the spin of the {sup 69}Kr ground state. Preliminary results regarding the half lives for the T{sub z}=−1 systems, relevant to the rapid proton capture (rp) process, are discussed.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2015

Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si

A UV photodiode fabricated by the UV oxidation of a metallic zinc thin film on p-Si has manifested unique photoresponse characteristics. The electron concentration found by the Hall measurement was 3 × 10{sup 16 }cm{sup −3}, and such a low electron concentration resulted in a low visible photoluminescence. UV illumination enhances the oxidation at low temperatures and decreases the concentration of the oxygen vacancies. The I-V characteristic showed a good rectification with a four-order magnitude difference in the forward and reverse currents at 2 V, and its linear and frequency independent C{sup −2}–V characteristic confirmed an abrupt pn junction. The photoresponse showed a visible blindness with a responsivity ratio of UV and visible light as high as 100. Such a visible-blind photoresponse was attributed to the optimum thickness of the SiO{sub 2} formed on the Si surface during the UV oxidation at 400 °C. A lower potential barrier to holes at the ZnO/SiO{sub 2} interface facilitates Fowler-Nordheim tunneling of the photo-generated holes during the UV illumination, while a higher potential barrier to electrons efficiently blocks transport of the photo-generated electrons to the ZnO during the visible light illumination. The presence of oxide resulted in a slow photoresponse to the turn-on and off of the UV light. A detailed analysis is presented to understand how the photo-generated carriers contribute step by step to the photocurrent. In addition to the slow photoresponse associated with the SiO{sub 2} interfacial layer, the decay of the photocurrent was found extremely slow after turn-off of the UV light. Such a slow decay of the photocurrent is referred to as a persistent photoconductivity, which is caused by metastable deep levels. It is hypothesized that Zn vacancies form such a deep level, and that the photo-generated electrons need to overcome a thermal-energy barrier for capture. The ZnO film by the UV oxidation at 400 °C was found to be rich in oxygen and deficient in zinc.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Photonuclear Production of 67 Cu From Gallium

Copper-67 is a radioisotope of interest for medical imaging and therapy as well as for under- standing stellar and interstellar evolution pertaining to the formation of proton-rich nuclei. Since 67 Cu decays 100% to 67 Zinc, understanding this reaction can shed light on the abundance of this and other p-nuclei elements in the universe. Here, the photonuclear production of 67 Cu from 71 Ga and natural gallium is examined as an alternative to its photoproduction from zinc. Two research and development production runs were performed at Thomas Jefferson National Accelerator Facility using an electron linac. During the first run, an 805-W, 30.9-MeV beam was used to irradiate a 1-mm tungsten radiator to create a bremsstrahlung flux. The resulting gamma photons irradiated 50.9 g of natural gallium encased in a graphite crucible for 24.2 h; 7.02 Bq/W∙s∙kg of 67 Cu activity was produced. During the second run, a 4380-W, 31.5-MeV beam was used for 12.0 h on the same target containing 60 g of natural gallium; 6.41 Bq/W∙s∙kg of 67 Cu activity was produced. Because of the difficulties in spectroscopically differentiating 67 Cu from 67 Ga, prior to each run, an isotopically pure 71 Ga disk was irradiated using a 100-W beam for 1 h, at the same respective energies. Finally, these baseline irradiations allowed for separation of 67 Cu from 67 Ga in the spectroscopic measurements of the natural gallium targets.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2015

Efficient inverted polymer solar cells based on conjugated polyelectrolyte and zinc oxide modified ITO electrode

Efficient inverted polymer solar cells (PSCs) were constructed by utilizing a conjugated polyelectrolyte PF{sub EO}SO{sub 3}Na and zinc oxide to modify the indium tin oxide (ITO) electrode. The ITO electrode modified by PF{sub EO}SO{sub 3}Na and zinc oxide possesses high transparency, increased electron mobility, smoothened surface, and lower work function. PTB7:PC{sub 71}BM inverted PSCs containing the modified ITO electrode achieved a high power conversion efficiency (PCE) of 8.49%, exceeding that of the control device containing a ZnO modified ITO electrode (7.48%). Especially, PCE-10:PC{sub 71}BM inverted polymer solar cells achieved a high PCE up to 9.4%. These results demonstrate a useful approach to improve the performance of inverted polymer solar cells.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2016

Hydrogen-related complexes in Li-diffused ZnO single crystals

Zinc oxide (ZnO) is a wide band gap semiconductor and a potential candidate for next generation white solid state lighting applications. In this work, hydrogen-related complexes in lithium diffused ZnO single crystals were studied. In addition to the well-known Li-OH complex, several other hydrogen defects were observed. When a mixture of Li{sub 2}O and ZnO is used as the dopant source, zinc vacancies are suppressed and the bulk Li concentration is very high (>10{sup 19 }cm{sup −3}). In that case, the predominant hydrogen complex has a vibrational frequency of 3677 cm{sup −1}, attributed to surface O-H species. When Li{sub 2}CO{sub 3} is used, a structured blue luminescence band and O-H mode at 3327 cm{sup −1} are observed at 10 K. These observations, along with positron annihilation measurements, suggest a zinc vacancy–hydrogen complex, with an acceptor level ∼0.3 eV above the valence-band maximum. This relatively shallow acceptor could be beneficial for p-type ZnO.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Redox-Mediated Stabilization in Zinc Molybdenum Nitrides

We report on the theoretical prediction and experimental realization of new ternary zinc molybdenum nitride compounds. We used theory to identify previously unknown ternary compounds in the Zn-Mo-N systems, Zn 3 MoN 4 and ZnMoN 2 , and to analyze their bonding environment. Experiments show that Zn-Mo-N alloys can form in broad composition range from Zn 3 MoN 4 to ZnMoN 2 in the wurtzite-derived structure, accommodating very large off-stoichiometry. Interestingly, the measured wurtzite-derived structure of the alloys is metastable for the ZnMoN 2 stoichiometry, in contrast to the Zn 3 MoN 4 stoichiometry, where ordered wurtzite is predicted to be the ground state. The formation of Zn 3 MoN 4 -ZnMoN 2 alloy with wurtzite-derived crystal structure is enabled by the concomitant ability of Mo to change oxidation state from +VI in Zn 3 MoN 4 to +IV in ZnMoN 2 , and the capability of Zn to contribute to the bonding states of both compounds, an effect that we define as 'redox-mediated stabilization.' The stabilization of Mo in both the +VI and +IV oxidation states is due to the intermediate electronegativity of Zn, which enables significant polar covalent bonding in both Zn 3 MoN 4 and ZnMoN 2 compounds. The smooth change in the Mo oxidation state between Zn 3 MoN 4 and ZnMoN 2 stoichiometries leads to a continuous change in optoelectronic properties - from resistive and semitransparent Zn 3 MoN 4 to conductive and absorptive ZnMoN 2 . The reported redox-mediated stabilization in zinc molybdenum nitrides suggests there might be many undiscovered ternary compounds with one metal having an intermediate electronegativity, enabling significant covalent bonding, and another metal capable of accommodating multiple oxidation states, enabling stoichiometric flexibility.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film

Near-perfect light absorption in subwavelength trench arrays etched in highly conductive gallium-doped zinc oxide films was experimentally observed in the mid infrared regime. At wavelengths corresponding to the resonant excitation of surface plasmons, up to 99% of impinging light is efficiently trapped and absorbed in the periodic trenches. Scattering cross sectional calculations reveal that each individual trench acts like a vertical split ring resonator with a broad plasmon resonance spectrum. The coupling of these individual plasmon resonators in the grating structure leads to enhanced photon absorption and significant resonant spectral linewidth narrowing. Ellipsometry measurements taken before and after device fabrication result in different permittivity values for the doped zinc oxide material, indicating that localized annealing occurred during the plasma etching process due to surface heating. Simulations, which incorporate a 50 nm annealed region at the zinc oxide surface, are in a good agreement with the experimental results.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Anharmonic phonons, thermal expansion, and nuclear quantum effects in Zn

The anharmonic behavior of phonons and thermal expansion of hexagonal zinc were studied from 15 to 690 K by inelastic neutron scattering (INS) and ab initio simulations. Phonon spectra were measured for Q-points covering the full Brillouin zone, giving the phonon density of states (DOS) and dispersions along high-symmetry directions. The dispersions were sharp at 15 K, but diffuse intensity was observed at energies above them. The dispersions broadened with temperature T and the diffuse intensity became stronger. This diffuse intensity appeared in all INS measurements and simulations, except for classical molecular dynamics at 15 K. The temperature-dependent effective potential (TDEP) method, which included the nuclear quantum effect from zero-point vibrational dynamics, was used to calculate the free energy and thermal expansion. For T < 100 K nuclear quantum effects were important for obtaining the correct negative thermal expansion, and path integral molecular dynamics (PIMD) was particularly effective for obtaining the negative thermal expansion in the basal plane. A Heisenberg-Langevin model for interacting phonons coupled to a thermal bath was able to reproduce the shape and intensity of the diffuse spectral features.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Optical Time Reversal from Time-Dependent Epsilon-Near-Zero Media

Materials with a spatially uniform but temporally varying optical response have applications ranging from magnetic field-free optical isolators to fundamental studies of quantum field theories. However, these effects typically become relevant only for time variations oscillating at optical frequencies, thus presenting a significant hurdle that severely limits the realization of such conditions. Here we present a thin-film material with a permittivity that pulsates (uniformly in space) at optical frequencies and realizes a time-reversing medium of the form originally proposed by Pendry [Science 322, 71 (2008)]. We use an optically pumped, 500 nm thick film of epsilon-near-zero (ENZ) material based on Al-doped zinc oxide. An incident probe beam is both negatively refracted and time reversed through a reflected phase-conjugated beam. As a result of the high nonlinearity and the refractive index that is close to zero, the ENZ film leads to time reversed beams (simultaneous negative refraction and phase conjugation) with near-unit efficiency and greater-than-unit internal conversion efficiency. The ENZ platform therefore presents the time-reversal features required, e.g., for efficient subwavelength imaging, all-optical isolators and fundamental quantum field theory studies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Acceptors in ZnO nanocrystals

Zinc oxide (ZnO) has potential for a range of optoelectronic applications. In this work, we studied the defect properties of ZnO nanocrystals, grown by a solid-state pyrolytic reaction method, using IR and electron paramagnetic resonance (EPR) spectroscopy. A series of IR absorption peaks have been observed at liquid-helium temperatures. These transition lines suggest a hydrogenic acceptor with a hole binding energy of ~ 0.4 - 0.5 eV. EPR measurements in the dark showed the well-known donor line at g = 1.96, and a line at g = 2.003, which we attribute to acceptors that involve a zinc vacancy. A line at g = 2.013, only seen after exposure to light, is assigned to nonaxial zinc vacancy-hydrogen complexes. Given the current lack of suitable acceptor dopants in ZnO, vacancy complexes may provide the best route toward p-type conductivity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Organic/inorganic hybrid synaptic transistors gated by proton conducting methylcellulose films

The idea of building a brain-inspired cognitive system has been around for several decades. Recently, electric-double-layer transistors gated by ion conducting electrolytes were reported as the promising candidates for synaptic electronics and neuromorphic system. In this letter, indium-zinc-oxide transistors gated by proton conducting methylcellulose electrolyte films were experimentally demonstrated with synaptic plasticity including paired-pulse facilitation and spatiotemporal-correlated dynamic logic. More importantly, a model based on proton-related electric-double-layer modulation and stretched-exponential decay function was proposed, and the theoretical results are in good agreement with the experimentally measured synaptic behaviors.

36 MATERIALS SCIENCE↗
DOE OSTI2015

From the Soil to the Seed. Metal Transport in Arabidopsis

Deficiencies of micronutrients such as Fe, Mn, and Zn commonly limit plant growth and crop yields. The long-term goals of our program are to understand how plants acquire metal micronutrients from the soil and distribute them while protecting themselves from the potential redox damage metals can cause to living tissues. Metals serve as important co-factors for photosynthesis and respiration, yet we still know very little about metal transport. Our approach combines experimental and computational tools from the physical sciences with biochemistry and molecular biology. Specifically, we combine mutant analysis with synchrotron X-ray fluorescence (SXRF) spectroscopy, a technique that allows us to image the elemental composition of living plant material in 3-D. By analyzing the phenotypes of lines carrying mutations in various metal transporters, we have identified the genes responsible for uptake of zinc from the soil as well as genes involved in loading the seeds with metal micronutrients. Several of these transporters affect the localization of metals in the seed without affecting the overall metal content. Understanding how seeds obtain and store nutrients is key to developing crops with higher agronomic and nutritional value.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Scattering attributes of one-dimensional semiconducting oxide nanomaterials individually probed for varying light-matter interaction angles

We report the characteristic optical responses of one-dimensional semiconducting oxide nanomaterials by examining the individual nanorods (NRs) of ZnO, SnO{sub 2}, indium tin oxide, and zinc tin oxide under precisely controlled, light-matter interaction geometry. Scattering signals from a large set of NRs of the different types are evaluated spatially along the NR length while varying the NR tilt angle, incident light polarization, and analyzer rotation. Subsequently, we identify material-indiscriminate, NR tilt angle- and incident polarization-dependent scattering behaviors exhibiting continuous, intermittent, and discrete responses. The insight gained from this study can advance our fundamental understanding of the optical behaviors of the technologically useful nanomaterials and, at the same time, promote the development of highly miniaturized, photonic and bio-optical devices utilizing the spatially controllable, optical responses of the individual semiconducting oxide NRs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗