Raman spectrum of alpha-N sub 2.
Raman spectrum of solid alpha-nitrogen at low temperatures, calculating scattering intensities and Raman active librational lattice vibrations
Brith, M.↗
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Pulsed-electron-beam annealing of ion-implantation damage
Short-duration high-intensity pulsed electron beams have been used to anneal ion-implantation damage in silicon and to electrically activate the dopant species. Lattice regrowth and dopant activation were determined using He(+)-4 backscattering, SEM, TEM, and device performance characteristics as diagnostic techniques. The annealing mechanism is believed to be liquid-phase epitaxial regrowth initiating from the substrate. The high-temperature transient pulse produced by the electron beam causes the dopant to diffuse rapidly in the region where the liquid state is achieved.
Greenwald, A. C.↗
The effects of platinum on nickel electrodes in the nickel hydrogen cell
Under conditions of nickel precharge in nickel-hydrogen cells, it is possible for platinum complex ions to form at the platinum catalyst electrode when no hydrogen is present. Platinum complex ions have been shown to interact with the active material in the nickel electrode to catalyze the formation of a nickel-cobalt compound within the active material lattice. This compound is readily identified by its characteristic voltage signature. A mechanism for the formation of this compound is proposed, and the effects that this compound has on the performance of the nickel electrode in the nickel-hydrogen cell are described.
Albert H Zimmerman↗
Unsteady Flow Simulation of a Sweeping Jet Actuator Using a Lattice-Boltzmann Method
Active flow control technology is increasingly used in aerospace applications to control flow separation and to improve aerodynamic performance. In this paper, PowerFLOW is used to simulate the flow through a sweeping jet actuator at two different pressure ratios. The lower pressure ratio leads to a high subsonic flow, whereas the high pressure ratio produces a choked flow condition. Comparison of numerical results with experimental data is shown, which includes qualitatively good agreement of pressure histories and spectra. PIV measurements are also available but the simulation overestimates mean and fluctuation quantities outside the actuator. If supply pressure is matched at one point inside the mixing chamber a good qualitative agreement is achieved at all other monitor points.
Duda, B.↗
Piezoelectrically enhanced photocathode
A photocathode, for generating electrons in response to incident photons in a photodetector, includes a base layer having a first lattice structure and an active layer having a second lattice structure and epitaxially formed on the base layer, the first and second lattice structures being sufficiently different to create a strain in the active layer with a corresponding piezoelectrically induced polarization field in the active layer, the active layer having a band gap energy corresponding to a desired photon energy.
Beach, Robert A.↗
Plastic deformation of molybdenum-rhenium alloy crystals
Plastic deformation of Mo-Re single crystals produced by electron beam zone refining, investigating lattice frictional stress, activation volume temperature variation, etc
Brotzen, F. R.↗
Low frequency dielectric relaxation in boracites
In order to elucidate the nature of the imperfections which adversely affect pyroelectric processes in boracites, the thermal and dispersive characteristics of the low frequency dielectric response in iron-iodide boracite (Fe3B7O13I) and copper-chloride boracite (Cu3B7O13Cl) have been investigated. These characteristics were measured as a function of crystallographic orientation and applied field in both the ferroelectric and paraelectric states. The low frequency dielectric relaxation of 100 line oriented multi-domain copper-chloride boracite clearly indicates the dipole nature of the lattice imperfections. The activation energies calculated from a noninteracting Debye model, are 0.53 eV in the ferroelectric phase and 0.10 eV in the paraelectric phase.
Kim, Q.↗
Hypercube-Computer Analysis Of Electromagnetic Scattering
Capabilities of hypercube and parallel processing demonstrated. Report describes use of Mark III Hypercube computer to analyze scattering of electromagnetic waves. Purpose of study to assess utility of parallel computing in such computation-intensive problems as large-scale electromagnetic scattering. Two electromagnetic codes based on different algorithms converted to run on Mark III Hypercube. First code implements finite-difference, time-domain solution of Maxwell's curl equations. Second code is Numerical Electromagnetics Code (NEC-2) which embodies frequency-domain method and developed to analyze electromagnetic responses of antennas and other metallic structures. On Mark III Hypercube with 32 active nodes, largest lattice contains about 2,048,000 unit cells.
Patterson, J. E.↗
Active Wing Shaping Control Concept Using Composite Lattice-Based Cellular Materials
No abstract available
Swei, Sean↗
Capacity loss on storage and possible capacity recovery for HST nickel-hydrogen cells
Negatively precharged nickel hydrogen cells will experience a useable capacity loss during extended open circuit storage periods. Some of the lost capacity can be recovered through cycling. Capacity recovery through cycling can be enhanced by cycling at high depths of discharge (DOD). The most timely procedure for recovering the faded capacity is to charge the cell fully and allow the cell to sit open-circuit at room temperature. This procedure seems to be effective in part because of the enlarged structure of the active materials. The compounds that formed during storage at the low electrode potentials can more easily dissolve and redistribute. All of the original capacity cannot be recovered because the lattice structure of the active material is irreversibly altered during storage. The recommendation is to use positively precharged cells activated with 26 percent KOH if possible. In aerospace applications, the benefits of negative precharge are offset by the possibility of delays and storage periods.
Lowery, John E.↗
Electron trapping and transport by supersonic solitons in one-dimensional systems
A one-dimensional chain of ions or molecules and electrons described by a Froehlich-type Hamiltonian with quartic phonon anharmonicities is investigated. It is shown that the anharmonic lattice supports supersonic solitons which under favorable circumstances may trap electrons and transport them along the lattice. For a lattice constant/soliton spatial extent quotient of the order of 0.1, rough estimates give electron trapping energies in the meV range. They imply a useful temperature range, up to tens of degrees K, for observing the new effect. The activation energy of a lattice soliton is proportional to the molecular mass and is therefore quite high (about 1 eV) for typical quasi-one-dimensional organic systems.
Zmuidzinas, J. S.↗
Grain boundary sliding behaviour of copper and alpha brass at intermediate temperatures
The role of grain boundary sliding in copper and Cu-30 pct Zn in the temperature range 0.50-0.72 Tm, where Tm is the absolute melting point of the material, is examined. First, sliding data obtained on these materials are presented. The results indicate that the stress exponent for sliding is similar to that for lattice deformation, while the activation energy for sliding varies between 0.5 and 1.6 of the activation energy for creep. Several models proposed for grain boundary sliding are discussed, and it is shown that they do not account for the observed results on copper and alpha brass. A phenomenological model is proposed, where it is assumed that grain boundary sliding results from the glide of dislocations on secondary slip planes.
Raj, S. V.↗
Strained layer InP/InGaAs quantum well laser
Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In.sub.0.53 Ga.sub.0.47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In.sub.0.75 Ga.sub.0.25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 .mu.m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5.times.10.sup.17 /cm.sup.3 to about 2.times.10.sup.18 /cm.sup.3. Hydrogen sulfide is used for n-type dopant in the substrate.
Forouhar, Siamak↗
Thermal Line Shift and Broadening of Ho(3+) in Y3AI5O12 and Lu3AIO12
The interaction between the active ion and the host lattice manifests itself in two distinct ways: the static interaction with the crystal field that causes the splitting of the free ion energy levels and the active interaction through the surrounding phonon system that produces temperature dependent characteristics in the optical spectrum of the ion (e.g. line broadening and line shift). The strength of the splitting depends heavily on the electronic configuration of the atom. The model give by McCumber and Sturge describes the thermal effects on line width and position above 77 K with Raman scattering of Debye model phonons. These processes predict a Lorentzian line shape. However, below 77 K the principal contributions are from crystal inhomogeneities that result in a Gaussian line shape. We have investigated the experimental Stark levels as well as the thermal effects on the line width and the position of trivalent holmium ions in both yttrium aluminum garnet, Y3Al5O12 (YAG) and lutetium aluminum garnet, Lu3Al5O12 (LuAG) crystals. We have compared the Stark levels of the (5)I(6) state, and the thermal line shift and broadening of an isolated transition (Z2 to X13) between the (5)I(8) and (5)I(6) stark levels in these crystals. This transition occurs in the near infrared region at approximately 1117 nm.
Snoke, Elizabeth R.↗
Structure and electrical activity of planar defects in EFG ribbons
Optical, electron beam induced current (EBIC), and transmission electron microscopy were used to study the structure and electrical activity of planar defects in EFG silicon. What appears to be twin boundaries by both optical microscopy plus etching, and by EBIC are in reality systems of microtwins, some of which are only a few atomic lattice planes thick. The electrical activity of planar defects appears to be correlated with emission of dislocations especially at termination points. Impurity effects may also play a role. Twin boundaries per se appear not to be electrically active.
Ast, D. G.↗
Spectroscopy of infrared-active phonons in high-temperature superconductors
For a large variety of superconducting materials both experimental and theoretical lattice dynamical studies have been performed to date. The assignment of the observed infrared- and Raman-active phonon modes to the particular lattice eigenmodes is generally accepted. We will concentrate here upon the analysis of the changes of the infrared-phonon parameters (frequency and linewidth) upon entering the superconducting state which, as will be shown, may provide information on the magnitude of the superconductivity-related gap and its dependence on the superconducting transition temperature Tc.
Litvinchuk, A. P.↗
A lattice controller for telerobotic systems
A model for a lattice control structure for telerobotic systems (Critter) has been developed and prototyped. The Critter hierarchical lattice structure, node potentiation, and weighted feedback are described, and the implementation of the Critter model on a VAX architecture is addressed with regard to node processes, lattice structure, node potentiation, and network activation. The implementation environment is considered and the Critter model attributes which are desirable in a telerobotic system are discussed. Future research directions on the use of this concept for telerobotic control are examined.
Sliwa, Nancy Orlando↗
Proton Effects and Test Issues for Satellite Designers: Displacement Effects - Section 4
Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects described in section IVA. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses [Srou88a, Summ92, Hopk97] which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves.
Marshall, Cheryl J.↗