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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Global gyrokinetic simulation of neoclassical ambipolar electric field and its effects on microturbulence in W7-X stellarator

Global neoclassical simulations of a model equilibrium of the W7-X stellarator find an ambipolar electric field with either an ion root or an electron root solution depending on the temperature ratio between electrons and ions. The ambipolar electric field is then used as an equilibrium field in the turbulence simulations of ion temperature gradient (ITG) instability. The shear of the ambipolar electric field has modest effects on the ITG linear instability, nonlinear saturation amplitude, and turbulent transport in the ion root case. However, in the electron root case, the ambipolar electric field significantly reduces the linear ITG growth rate, turbulence intensity, and radial correlation length, resulting in an ion heat conductivity comparable to the neoclassical transport level in the strong shear region.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Global Gyrokinetic Simulations of Isotope Effects under Ambipolar Electric Fields and Advances Toward Whole-Volume Modeling

We review global gyrokinetic simulation studies on plasma transport in the Large Helical Device using XGC-S. XGC-S is an extended version of X-point Gyrokinetic Code for stellarators and has been progressively verified throughout the code development process. Verification tests of neoclassical transport successfully demonstrate the generation of an ambipolar electric field due to ripple-trapped particles. We perform quasi-linear analyses of the ion temperature gradient mode under the influence of the ambipolar electric field. The results reveal that the ambipolar electric field and the heavy hydrogen component in mixed isotope plasmas can lead to the favorable isotope effect observed in recent deuterium experiments. We also present recent efforts in code development toward whole-volume simulations, including the helical divertor region. A mesh generation scheme based on field-line tracing and the construction of curved surfaces perpendicular to the magnetic field would be promising for global field calculations in the whole-volume simulations.

Basic Plasma Phenomena and Gas Discharges↗
DOE OSTI2021

Unveiling the ambipolar carrier transport property of SnO 2–X for multiple-functional interlayers in perovskite solar cells

Tin oxides are the most promising electron transport layers in perovskite solar cells. An ambipolar carrier transport property has been recently demonstrated which enables a simple interconnection structure for all-perovskite tandem solar cells. However, the underlying mechanism for its ambipolar behavior is unclear which cannot be explained by the intrinsic defects in SnO 2-x . Here by using density functional theory calculations, we unveil the origin of the ambipolar carrier transport of non-stoichiometry SnO 2-x with a structure of SnO embedded in SnO 2 matrix. The hybridization of O 2p and Sn 5s orbitals of SnO introduces mid-gap states in the bandgap of SnO 2 , enabling hole transport property for SnO 2-x when x is > 0.2. Increasing the percentage of SnO in SnO 2-x significantly enhances the hole transport capability of SnO 2-x due to the enlarged Sn-O-Sn angles that increases orbital overlapping between O and Sn atoms, thus providing strategies for the further tuning of the carrier transport properties of SnO 2-x by compositional and structural designs.

14 SOLAR ENERGY↗
DOE OSTI2020

Investigation of the neoclassical ambipolar electric field in ion-root plasmas on W7-X

The role of the radial electric field in high-performance ion-root plasmas on Wendelstein 7-X (W7-X) is examined and compared with neoclassical predictions herein. The W7-X stellarator is the world’s first large-scale optimized stellarator. One of the important targets chosen for optimization during the W7-X design process was the reduction of core neoclassical heat transport. This optimization was targeted for reactor-relevant high-density plasmas with $T_e ≈ T_i$ in which the neoclassical ambipolar radial electric field is expected to be negative throughout the plasmas core. Measurements of the core radial electric field $(E_r)$ have confirmed that ion-root conditions (negative $(E_r)$ in the plasma core) have been achieved in W7-X with high-density plasmas and central ECRH. These measured $(E_r)$ profiles agree well with the neoclassical ambipolar $(E_r)$ predicted by the code SFINCS . This good agreement provides confidence in the validity of neoclassical calculations in high-density ion-root conditions, and enables initial studies on the role of neoclassical transport in the optimized high-density regime of W7-X. Profile measurements of electron temperature $(T_e)$, ion temperature $(T_i)$ and electron density $(n_e)$ along with approximations for the average value of $Z$ eff have been used as inputs to the sfincs code to calculate the ambipolar $E_r$ profile along with neoclassical ion and electron energy flux profiles $(Q$ NCi , $Q$ NCe $)$. Finally the total experimental energy input to the plasma from ECRH heating has been compared to the neoclassical energy fluxes to provide a first estimate for the fraction of transport that can be attributed to neoclassical processes in reactorrelevant high-density ion-root conditions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1984

Ambipolar diffusion in the middle atmosphere

In the middle atmosphere above 60 km, the electron concentration increases with altitude, reaching values of 10 to the 10th per cu m in the daytime ionospheric E region near 100 km. The electrons are more mobile than the ions and diffuse more rapidly through the neutral atmosphere. The electron diffusion polarizes the medium, causing an electric field to develop that acts to retard the electron diffusion and enhance the conduction current of ions. A global zonally averaged numerical model of atmosheric electricity from the ground to 100 km is used to examine the effect of ambipolar diffusion and the earth's geomagnetic field on the currents and fields in the middle atmosphere. The results show that above about 65 km, ambipolar diffusion generates local electric fields and conduction currents that balance electron diffusion currents. The electric fields and conduction currents are a few orders of magnitude larger than the vertical fields and currents calculated from the downward mapping of the ionospheric potential without taking electron diffusion into account. Ambipolar diffusion does not alter the total current flowing in the global circuit. It is a local effect where enhanced conduction currens flow to balance the electron diffusion current.

Tzur, I.↗
NASA NTRS1994

The formation of sharp structures by ambipolar diffusion

The effect of ambipolar diffusion is investigated using simple numerical models. Examples are shown where sharp structures develop around magnetic nulls. In contrast to the case of ordinary diffusion, the magnetic field topology is conserved by ambipolar diffusion. This is demonstrated in an example where differential rotation winds up an initially uniform magnetic field and brings oppositely oriented field lines close together. It is argued that ambipolar diffusion produces structures of scales small enough for reconnection to occur.

Brandenburg, Axel↗
DOE OSTI2020

Half‐Fused Diketopyrrolopyrrole‐Based Conjugated Donor–Acceptor Polymer for Ambipolar Field‐Effect Transistors

Abstract A novel building block, denoted as half‐fused diketopyrrolopyrrole (DPP) (9‐(3‐octadecylhenicosyl)‐8‐(thiophen‐2‐yl)‐7 H ‐pyrrolo[3,4‐ a ]thieno[3,2‐ g ]indolizine‐7,10(9 H )‐dione), in which one of the flanking thiophene units is fused to one of the DPP rings via a carbon‐carbon double bond at the N‐position is reported. The half‐fused DPP is successfully utilized as an electron acceptor to prepare the conjugated donor–acceptor polymer PTFDFT , which exhibits ambipolar semiconducting behavior in ambient air. Theoretical calculations and absorption spectral studies show that the backbone of PTFDFT is more planar compared to the reference polymer with conventional DPP units. As a result, PTFDFT shows a narrow bandgap and low lowest unoccupied molecular orbital level. The more planar backbone with fewer side chains favors the dense packing of the polymer chains of PTFDFT with a short π–π stacking distance (3.49 Å). Grazing‐incidence wide‐angle X‐ray scattering data further confirm the predominant edge‐on packing mode of the PTFDFT polymer chains on the substrate. As expected, the PTFDFT thin film shows excellent ambipolar semiconducting properties under ambient conditions, reaching 2.23 and 1.08 cm 2 V −1 s −1 for the n‐ and p‐channels, respectively. In addition, complementary‐like inverter with gain value as high as 141 is successfully constructed using the PTFDFT thin film.

Shi, Dandan↗
DOE OSTI2021

Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO 2

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO 2 ), a water-insoluble GeO 2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga 2 O 3 . The subsequent realization of single-crystalline r-GeO 2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO 2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Confinement time and ambipolar potential in a relativistic mirror-confined plasma

Advanced aneutronic fusion fuels such as proton-Boron 11 tend to require much higher temperatures than conventional fuels like deuterium–tritium. For electrons, the bulk plasma temperature can approach a substantial fraction of the rest mass. In a mirror confinement system, where the electrons are confined by an ambipolar potential of at least five electron temperatures, the tail electrons which can escape the potential are fully relativistic, which must be taken into account in calculating their confinement. In this paper, simple estimates are employed to extend the scaling of the confinement time into the relativistic regime. By asymptotically matching this scaling to known solutions in the non-relativistic limit, accurate forms for the confinement time (and thus, the ambipolar potential) are obtained. Furthermore, these forms are verified using finite-element-based Fokker–Planck simulations over a wide range of parameters. Comparing relativistic and nonrelativistic mirror-confined plasmas with the same ratio of confining potential |eΦ| to electron temperature T e and the same mirror ratio R, the net result is a decrease in the confinement time due to relativistic effects by a factor of S ≡ (1 + 15T e /8m e c 2 )/(1 + 2|eΦ|/m e c 2 )⁠.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications

Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm 2 /Vs and 2.05 cm 2 /Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. Furthermore, this work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.

42 ENGINEERING↗
NASA NTRS1990

Modeling solar flare conduction fronts. I - Homogeneous plasmas and ion-acoustic turbulence. II - Inhomogeneous plasmas and ambipolar electric fields

A one-dimensional, electrostatic, particle-in-cell simulation is used here to model the expansion of a heated electron population in a coronal loop during a solar flare and the characteristics of the associated X-ray emissions. The hot electrons expand outward from the localized region, creating an ambipolar electric field which accelerates a return current of cooler, ambient electrons. Ion-acoustic waves are generated by the return currents as proposed by Brown et al. (1979), but they play little or no role in containing energetic electrons and the conduction front proposed by Brown et al. does not form. The X-ray emission efficiency of the electrons is too low in the corona for them to be the source of hard X-ray bursts. The particle dynamics changes dramatically if the heated plasma is at low altitudes and expands upward into the more tenuous plasma at higher altitudes. Two important applications of this finding are the radio-frequency heating of the corona and the collisional heating of the chromosphere by precipitating energetic electrons. In both cases, the overlying plasma has a density that is too low to supply a balancing return current to the expanding hot electrons. As a result, an ambipolar electric field develops that tends to confine the energetic electrons behind a front that propagate outward at about the speed of sound.

Mckean, M. E.↗
NASA NTRS2012

Ambipolar Electric Field, Photoelectrons, and Their Role in Atmospheric Escape From Hot Jupiters

Atmospheric mass loss from Hot Jupiters can be large due to the close proximity of these planets to their host star and the strong radiation the planetary atmosphere receives. On Earth, a major contribution to the acceleration of atmospheric ions comes from the vertical separation of ions and electrons, and the generation of the ambipolar electric field. This process, known as the "polar wind," is responsible for the transport of ionospheric constituents to Earth's magnetosphere, where they are well observed. The polar wind can also be enhanced by a relatively small fraction of super-thermal electrons (photoelectrons) generated by photoionization.We formulate a simplified calculation of the effect of the ambipolar electric field and the photoelectrons on the ion scale height in a generalized manner. We find that the ion scale height can be increased by a factor of 2-15 due to the polar wind effects. We also estimate a lower limit of an order of magnitude increase of the ion density and the atmospheric mass-loss rate when polar wind effects are included.

atmospheres↗
DOE OSTI2020

Design and Synthesis of Annulated Benzothiadiazoles via Dithiolate Formation for Ambipolar Organic Semiconductors

Substituted 2,1,3-benzothiadiazole ( BTD ) is a widely used electron acceptor unit for functional organic semiconductors. Difluorination or annulation on the 5,6-position of the benzene ring is among the most adapted chemical modifications to tune the electronic properties, though each sees its own limitations in regulating the frontier orbital levels. Herein, a hitherto unreported 5,6-annulated BTD acceptor, denoted as ssBTD , is designed and synthesized by incorporating an electron-withdrawing 2-(1,3-dithiol-2-ylidene)malononitrile moiety via aromatic nucleophilic substitution of the 5,6-difluoroBTD ( ffBTD ) precursor. Unlike the other reported BTD annulation strategies, this modification leads to the simultaneous decrease in both frontier orbital energies, a welcoming feature for photovoltaic applications. Incorporation of ssBTD into conjugated polymers results in materials boasting broad light absorption, dramatic solvatochromic and thermochromic responses (>100 nm shift and a band gap difference of ~0.28 eV), and improved crystallinity in the solid state. Such physical properties are in accordance with the combined electron-withdrawing effect and significantly increased polarity associated with the ssBTD unit, as revealed by detailed theoretical studies. Furthermore, the thiolated ssBTD imbues the polymer with ambipolar charge transport property, in contrast to the ffBTD -based polymer, which transports holes only. While the low mobilities (10 -4 to 10 -5 cm 2 V -1 s -1 ) could be further optimized, detailed studies validate that the thioannulated BTD is a versatile electron-accepting unit for the design of functional stimuli-responsive optoelectronic materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Theory of mean E × B shear in a stochastic magnetic field: ambipolarity breaking and radial current

The mean E $ \times $ B shear in a stochastic magnetic field is calculated, using the radial force balance relation and transport equations. This analysis is relevant to the L → H transition with resonant magnetic perturbations, and special focus is placed upon the physics of non-ambipolar transport and radial current. The key physical process is the flow of fluctuating currents along wandering magnetic fields. The increments in poloidal and toroidal rotation, density and ion pressure are calculated. The radial envelope of the magnetic perturbations inside the plasma defines a new scale ${\ell _{{\text{env}}}}$, which is the characteristic scale of the magnetic fluctuation intensity profile. Here, the net particle outflow due to stochastic magnetic fields is calculated and is determined by the net radial current through the separatrix. Implications for the L → H transition are discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2016

Enhanced O2 Loss at Mars Due to an Ambipolar Electric Field from Electron Heating

Recent results from the MAVEN Langmuir Probe and Waves (LPW) instrument suggest higher than predicted electron temperatures (T sub e) in Mars dayside ionosphere above approx. 180 km in altitude. Correspondingly, measurements from Neutral Gas and Ion Mass Spectrometer (NGIMS) indicate significant abundances of O2+ up to approx. 500 km in altitude, suggesting that O2+ may be a principal ion loss mechanism of oxygen. In this article, we investigate the effects of the higher T(sub e) (which results from electron heating) and ion heating on ion outflow and loss. Numerical solutions show that plasma processes including ion heating and higher T(sub e) may greatly increase O2+ loss at Mars. In particular, enhanced T(sub e) in Mars ionosphere just above the exobase creates a substantial ambipolar electric field with a potential (e) of several k(sub b)T(sub e), which draws ions out of the region allowing for enhanced escape. With active solar wind, electron and ion heating, direct O2+ loss could match or exceed loss via dissociative recombination of O2+. These results suggest that direct loss of O2+ may have played a significant role in the loss of oxygen at Mars over time.

Mars↗
DOE OSTI2023

Ambipolar Electrochemistry of Pre‐Intercalated Ti 3 C 2 T x MXene in Ionic Liquid Electrolyte

Abstract Cation intercalation with or without redox remains the dominant charge storage mechanism for two‐dimensional (2D) Ti 3 C 2 T x MXene. Anion‐based charge storage remains unexplored due to intrinsic negative surface charge of MXenes preventing spontaneous intercalation of anions and irreversible oxidation of Ti at anodic potentials in aqueous electrolytes. In this work, we report on the ambipolar electrochemical behavior of the Ti 3 C 2 T x in ionic liquid electrolyte over a 2.5 V electrochemically stable window. The experiments are conducted on a thin Ti 3 C 2 T x film current collector coated with an electroactive layer of small flakes (∼150 nm) of Ti 3 C 2 T x pre‐intercalated with 1‐ethyl‐3‐methylimidazolium bis‐(trifluoromethylsulfonyl)‐imide (EMIM‐TFSI) ionic liquid. Couples of redox peaks with a very small potential separation during the voltage sweep are observed at high negative (−0.75 V vs. Ag wire) and high positive (+0.75 V vs. Ag wire) potentials. Our experimental electrochemical data combined with density functional theory (DFT) calculations suggest feasibility of pseudo‐intercalation of TFSI anions between Ti 3 C 2 T x flakes. This study provides a pathway for elucidating anion intercalation for different MXene chemistries in solvent‐free electrolytes, which can lead to development of MXene based energy storage devices with improved performance.

Electrochemistry↗
DOE OSTI2020

Semiconducting High-Entropy Chalcogenide Alloys with Ambi-ionic Entropy Stabilization and Ambipolar Doping

Entropy stabilization is a novel materials-design paradigm to realize new compounds with widely tunable properties. However, almost all entropy-stabilized materials so far are either conducting metals or insulating ceramics, with a clear dearth in the semiconducting regime. Here, a new class of the multi-cationic and -anionic entropy-stabilized chalcogenide alloys based on the (Ge,Sn,Pb)(S,Se,Te) formula are synthesized and characterized experimentally. The con-figurational entropy from the disorder of both the anion and the cation sublattices reaches a record value of ~2.2 R mol -1 for the equimolar composition and stabilizes the single-phase solid solution. Theoretical calculations and experiments both show that the synthesized alloys are thermodynamically stable at the growth temperature and kinetically metastable at room temperature, segregating by spinodal decomposition at moderate temperatures. In conclusion, doping and electronic transport measurements verify that the synthesized materials are ambipolarly dopable semiconductors, which paves the way for the wider adoption of entropy-stabilized chalcogenide alloys in functional applications.

36 MATERIALS SCIENCE↗