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At least 19 records

Global gyrokinetic simulation of neoclassical ambipolar electric field and its effects on microturbulence in W7-X stellarator

Global neoclassical simulations of a model equilibrium of the W7-X stellarator find an ambipolar electric field with either an ion root or an electron root solution depending on the temperature ratio between electrons and ions. The ambipolar electric field is then used as an equilibrium field in the turbulence simulations of ion temperature gradient (ITG) instability. The shear of the ambipolar electric field has modest effects on the ITG linear instability, nonlinear saturation amplitude, and turbulent transport in the ion root case. However, in the electron root case, the ambipolar electric field significantly reduces the linear ITG growth rate, turbulence intensity, and radial correlation length, resulting in an ion heat conductivity comparable to the neoclassical transport level in the strong shear region.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Global Gyrokinetic Simulations of Isotope Effects under Ambipolar Electric Fields and Advances Toward Whole-Volume Modeling

We review global gyrokinetic simulation studies on plasma transport in the Large Helical Device using XGC-S. XGC-S is an extended version of X-point Gyrokinetic Code for stellarators and has been progressively verified throughout the code development process. Verification tests of neoclassical transport successfully demonstrate the generation of an ambipolar electric field due to ripple-trapped particles. We perform quasi-linear analyses of the ion temperature gradient mode under the influence of the ambipolar electric field. The results reveal that the ambipolar electric field and the heavy hydrogen component in mixed isotope plasmas can lead to the favorable isotope effect observed in recent deuterium experiments. We also present recent efforts in code development toward whole-volume simulations, including the helical divertor region. A mesh generation scheme based on field-line tracing and the construction of curved surfaces perpendicular to the magnetic field would be promising for global field calculations in the whole-volume simulations.

Basic Plasma Phenomena and Gas Discharges↗

Unveiling the ambipolar carrier transport property of SnO 2–X for multiple-functional interlayers in perovskite solar cells

Tin oxides are the most promising electron transport layers in perovskite solar cells. An ambipolar carrier transport property has been recently demonstrated which enables a simple interconnection structure for all-perovskite tandem solar cells. However, the underlying mechanism for its ambipolar behavior is unclear which cannot be explained by the intrinsic defects in SnO 2-x . Here by using density functional theory calculations, we unveil the origin of the ambipolar carrier transport of non-stoichiometry SnO 2-x with a structure of SnO embedded in SnO 2 matrix. The hybridization of O 2p and Sn 5s orbitals of SnO introduces mid-gap states in the bandgap of SnO 2 , enabling hole transport property for SnO 2-x when x is > 0.2. Increasing the percentage of SnO in SnO 2-x significantly enhances the hole transport capability of SnO 2-x due to the enlarged Sn-O-Sn angles that increases orbital overlapping between O and Sn atoms, thus providing strategies for the further tuning of the carrier transport properties of SnO 2-x by compositional and structural designs.

14 SOLAR ENERGY↗

Investigation of the neoclassical ambipolar electric field in ion-root plasmas on W7-X

The role of the radial electric field in high-performance ion-root plasmas on Wendelstein 7-X (W7-X) is examined and compared with neoclassical predictions herein. The W7-X stellarator is the world’s first large-scale optimized stellarator. One of the important targets chosen for optimization during the W7-X design process was the reduction of core neoclassical heat transport. This optimization was targeted for reactor-relevant high-density plasmas with $T_e ≈ T_i$ in which the neoclassical ambipolar radial electric field is expected to be negative throughout the plasmas core. Measurements of the core radial electric field $(E_r)$ have confirmed that ion-root conditions (negative $(E_r)$ in the plasma core) have been achieved in W7-X with high-density plasmas and central ECRH. These measured $(E_r)$ profiles agree well with the neoclassical ambipolar $(E_r)$ predicted by the code SFINCS . This good agreement provides confidence in the validity of neoclassical calculations in high-density ion-root conditions, and enables initial studies on the role of neoclassical transport in the optimized high-density regime of W7-X. Profile measurements of electron temperature $(T_e)$, ion temperature $(T_i)$ and electron density $(n_e)$ along with approximations for the average value of $Z$ eff have been used as inputs to the sfincs code to calculate the ambipolar $E_r$ profile along with neoclassical ion and electron energy flux profiles $(Q$ NCi , $Q$ NCe $)$. Finally the total experimental energy input to the plasma from ECRH heating has been compared to the neoclassical energy fluxes to provide a first estimate for the fraction of transport that can be attributed to neoclassical processes in reactorrelevant high-density ion-root conditions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Half‐Fused Diketopyrrolopyrrole‐Based Conjugated Donor–Acceptor Polymer for Ambipolar Field‐Effect Transistors

Abstract A novel building block, denoted as half‐fused diketopyrrolopyrrole (DPP) (9‐(3‐octadecylhenicosyl)‐8‐(thiophen‐2‐yl)‐7 H ‐pyrrolo[3,4‐ a ]thieno[3,2‐ g ]indolizine‐7,10(9 H )‐dione), in which one of the flanking thiophene units is fused to one of the DPP rings via a carbon‐carbon double bond at the N‐position is reported. The half‐fused DPP is successfully utilized as an electron acceptor to prepare the conjugated donor–acceptor polymer PTFDFT , which exhibits ambipolar semiconducting behavior in ambient air. Theoretical calculations and absorption spectral studies show that the backbone of PTFDFT is more planar compared to the reference polymer with conventional DPP units. As a result, PTFDFT shows a narrow bandgap and low lowest unoccupied molecular orbital level. The more planar backbone with fewer side chains favors the dense packing of the polymer chains of PTFDFT with a short π–π stacking distance (3.49 Å). Grazing‐incidence wide‐angle X‐ray scattering data further confirm the predominant edge‐on packing mode of the PTFDFT polymer chains on the substrate. As expected, the PTFDFT thin film shows excellent ambipolar semiconducting properties under ambient conditions, reaching 2.23 and 1.08 cm 2 V −1 s −1 for the n‐ and p‐channels, respectively. In addition, complementary‐like inverter with gain value as high as 141 is successfully constructed using the PTFDFT thin film.

Shi, Dandan↗

Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO 2

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO 2 ), a water-insoluble GeO 2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga 2 O 3 . The subsequent realization of single-crystalline r-GeO 2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO 2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties.

36 MATERIALS SCIENCE↗

Confinement time and ambipolar potential in a relativistic mirror-confined plasma

Advanced aneutronic fusion fuels such as proton-Boron 11 tend to require much higher temperatures than conventional fuels like deuterium–tritium. For electrons, the bulk plasma temperature can approach a substantial fraction of the rest mass. In a mirror confinement system, where the electrons are confined by an ambipolar potential of at least five electron temperatures, the tail electrons which can escape the potential are fully relativistic, which must be taken into account in calculating their confinement. In this paper, simple estimates are employed to extend the scaling of the confinement time into the relativistic regime. By asymptotically matching this scaling to known solutions in the non-relativistic limit, accurate forms for the confinement time (and thus, the ambipolar potential) are obtained. Furthermore, these forms are verified using finite-element-based Fokker–Planck simulations over a wide range of parameters. Comparing relativistic and nonrelativistic mirror-confined plasmas with the same ratio of confining potential |eΦ| to electron temperature T e and the same mirror ratio R, the net result is a decrease in the confinement time due to relativistic effects by a factor of S ≡ (1 + 15T e /8m e c 2 )/(1 + 2|eΦ|/m e c 2 )⁠.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications

Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm 2 /Vs and 2.05 cm 2 /Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. Furthermore, this work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.

42 ENGINEERING↗

Design and Synthesis of Annulated Benzothiadiazoles via Dithiolate Formation for Ambipolar Organic Semiconductors

Substituted 2,1,3-benzothiadiazole ( BTD ) is a widely used electron acceptor unit for functional organic semiconductors. Difluorination or annulation on the 5,6-position of the benzene ring is among the most adapted chemical modifications to tune the electronic properties, though each sees its own limitations in regulating the frontier orbital levels. Herein, a hitherto unreported 5,6-annulated BTD acceptor, denoted as ssBTD , is designed and synthesized by incorporating an electron-withdrawing 2-(1,3-dithiol-2-ylidene)malononitrile moiety via aromatic nucleophilic substitution of the 5,6-difluoroBTD ( ffBTD ) precursor. Unlike the other reported BTD annulation strategies, this modification leads to the simultaneous decrease in both frontier orbital energies, a welcoming feature for photovoltaic applications. Incorporation of ssBTD into conjugated polymers results in materials boasting broad light absorption, dramatic solvatochromic and thermochromic responses (>100 nm shift and a band gap difference of ~0.28 eV), and improved crystallinity in the solid state. Such physical properties are in accordance with the combined electron-withdrawing effect and significantly increased polarity associated with the ssBTD unit, as revealed by detailed theoretical studies. Furthermore, the thiolated ssBTD imbues the polymer with ambipolar charge transport property, in contrast to the ffBTD -based polymer, which transports holes only. While the low mobilities (10 -4 to 10 -5 cm 2 V -1 s -1 ) could be further optimized, detailed studies validate that the thioannulated BTD is a versatile electron-accepting unit for the design of functional stimuli-responsive optoelectronic materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Theory of mean E × B shear in a stochastic magnetic field: ambipolarity breaking and radial current

The mean E $ \times $ B shear in a stochastic magnetic field is calculated, using the radial force balance relation and transport equations. This analysis is relevant to the L → H transition with resonant magnetic perturbations, and special focus is placed upon the physics of non-ambipolar transport and radial current. The key physical process is the flow of fluctuating currents along wandering magnetic fields. The increments in poloidal and toroidal rotation, density and ion pressure are calculated. The radial envelope of the magnetic perturbations inside the plasma defines a new scale ${\ell _{{\text{env}}}}$, which is the characteristic scale of the magnetic fluctuation intensity profile. Here, the net particle outflow due to stochastic magnetic fields is calculated and is determined by the net radial current through the separatrix. Implications for the L → H transition are discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Ambipolar Electrochemistry of Pre‐Intercalated Ti 3 C 2 T x MXene in Ionic Liquid Electrolyte

Abstract Cation intercalation with or without redox remains the dominant charge storage mechanism for two‐dimensional (2D) Ti 3 C 2 T x MXene. Anion‐based charge storage remains unexplored due to intrinsic negative surface charge of MXenes preventing spontaneous intercalation of anions and irreversible oxidation of Ti at anodic potentials in aqueous electrolytes. In this work, we report on the ambipolar electrochemical behavior of the Ti 3 C 2 T x in ionic liquid electrolyte over a 2.5 V electrochemically stable window. The experiments are conducted on a thin Ti 3 C 2 T x film current collector coated with an electroactive layer of small flakes (∼150 nm) of Ti 3 C 2 T x pre‐intercalated with 1‐ethyl‐3‐methylimidazolium bis‐(trifluoromethylsulfonyl)‐imide (EMIM‐TFSI) ionic liquid. Couples of redox peaks with a very small potential separation during the voltage sweep are observed at high negative (−0.75 V vs. Ag wire) and high positive (+0.75 V vs. Ag wire) potentials. Our experimental electrochemical data combined with density functional theory (DFT) calculations suggest feasibility of pseudo‐intercalation of TFSI anions between Ti 3 C 2 T x flakes. This study provides a pathway for elucidating anion intercalation for different MXene chemistries in solvent‐free electrolytes, which can lead to development of MXene based energy storage devices with improved performance.

Electrochemistry↗

Semiconducting High-Entropy Chalcogenide Alloys with Ambi-ionic Entropy Stabilization and Ambipolar Doping

Entropy stabilization is a novel materials-design paradigm to realize new compounds with widely tunable properties. However, almost all entropy-stabilized materials so far are either conducting metals or insulating ceramics, with a clear dearth in the semiconducting regime. Here, a new class of the multi-cationic and -anionic entropy-stabilized chalcogenide alloys based on the (Ge,Sn,Pb)(S,Se,Te) formula are synthesized and characterized experimentally. The con-figurational entropy from the disorder of both the anion and the cation sublattices reaches a record value of ~2.2 R mol -1 for the equimolar composition and stabilizes the single-phase solid solution. Theoretical calculations and experiments both show that the synthesized alloys are thermodynamically stable at the growth temperature and kinetically metastable at room temperature, segregating by spinodal decomposition at moderate temperatures. In conclusion, doping and electronic transport measurements verify that the synthesized materials are ambipolarly dopable semiconductors, which paves the way for the wider adoption of entropy-stabilized chalcogenide alloys in functional applications.

36 MATERIALS SCIENCE↗

Electron heat flux and propagating fronts in plasma thermal quench via ambipolar transport

The thermal collapse of a nearly collisionless plasma interacting with a cooling spot, in which the electron parallel heat flux plays an essential role, is both theoretically and numerically investigated. Here, we show that such thermal collapse, which is known as thermal quench in tokamaks, comes about in the form of propagating fronts, originating from the cooling spot, along magnetic field lines. The slow fronts, propagating with local ion sound speed, limit the aggressive cooling of plasma, which is accompanied by a plasma cooling flow toward the cooling spot. The extraordinary physics underlying such a cooling flow is that the fundamental constraint of ambipolar transport along the field line limits the spatial gradient of electron thermal conduction flux to the much weaker convective scaling, as opposed to the free-streaming scaling, so that a large electron temperature and, hence, pressure gradient can be sustained. The last ion front for a radiative cooling spot is a shock front where cold but flowing ions meet hot ions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Exploring the Origins of Anti-Ambipolarity in BBL Polymer: Links to Redox Chemistry, Electronic Structure, and Structural Dynamics

We examine the intrinsic physical-chemical properties of the conjugated ladder-type polymer poly(benzimidazobenzophenanthroline) (BBL) in response to electron transfer. We aim at explaining the origin of the anti-ambipolar behavior behind the observed BBL nonlinear response associated with specific device architectures. To elucidate this point, we use theory and computation based on first principles, including density functional theory optimizations, ab initio molecular dynamics, time-dependent DFT, and Marcus-theory analysis. Our results reveal that this redox response is not simply monotonic but follows an alternating odd/even pattern in which gap narrowing and reopening occur sequentially before near-gapless behavior emerges at high charging. Converging theoretical evidence in this work demonstrates that bell shaped conductivity in BBL originates in its fundamental electronic structure and supramolecular organization.

FOS: Physical sciences↗

Powerful Organic Molecular Oxidants and Reductants Enable Ambipolar Injection in a Large-Gap Organic Homojunction Diode

Doping has proven to be a critical tool for enhancing the performance of organic semiconductors in devices like organic light-emitting diodes. However, the challenge in working with high-ionization-energy (IE) organic semiconductors is to find p-dopants with correspondingly high electron affinity (EA) that will improve the conductivity and charge carrier transport in a film. Here, we use an oxidant that has been recently recognized to be a very strong p-type dopant, hexacyano-1,2,3-trimethylene-cyclopropane (CN6-CP). The EA of CN6-CP has been previously estimated via cyclic voltammetry to be 5.87 eV, almost 300 meV higher than other known high-EA organic molecular oxidants. We measure the frontier orbitals of CN6-CP using ultraviolet and inverse photoemission spectroscopy techniques and confirm a high EA value of 5.88 eV in the condensed phase. The introduction of CN6-CP in a film of large-band-gap, large-IE phenyldi(pyren-1-yl)phosphine oxide (POPy 2 ) leads to a significant shift of the Fermi level toward the highest occupied molecular orbital and a 2 orders of magnitude increase in conductivity. Using CN6-CP and n-dopant (pentamethylcyclopentadienyl)(1,3,5-trimethylbenzene)ruthenium (RuCp*Mes)2, we fabricate a POPy 2 -based rectifying p–i–n homojunction diode with a 2.9 V built-in potential. Blue light emission is achieved under forward bias. Furthermore, this effect demonstrates the dopant-enabled hole injection from the CN6-CP-doped layer and electron injection from the (RuCp*Mes) 2 -doped layer in the diode.

36 MATERIALS SCIENCE↗

Carbazole-substituted benzobisoxazoles: near-UV fluorescent emitters and ambipolar hosts for organic light-emitting diodes

The design of organic light emitting diode (OLED) materials with the potential for exhibiting thermally-activated delayed fluorescence (TADF) is reported. Using computational methods (DFT/TD-DFT) as a guiding tool, six materials with a benzobisoxazole (BBO) core and donor–acceptor–donor architectures were designed by changing the conjugation position of carbazole-substituted phenyl substituents and the type of BBO isomer (cis- vs. trans-). Experimental steady-state and transient absorption spectroscopic techniques were utilized to probe the TADF activity of these molecules. Each material was then used in host–guest OLED devices as either near-UV dopants or host with low singlet-triplet energy differences. The electroluminescent properties show that when used as dopants these materials provide near-UV emission (CIE y < 0.06 and CIE x = 0.16), whereas when used as hosts, these materials show reduced operating voltages and increased performance efficiencies when compared to commercial materials.

36 MATERIALS SCIENCE↗

The heliospheric ambipolar potential inferred from sunward-propagating halo electrons

ABSTRACT We provide evidence that the sunward-propagating half of the solar wind electron halo distribution evolves without scattering in the inner heliosphere. We assume the particles conserve their total energy and magnetic moment, and perform a ‘Liouville mapping’ on electron pitch angle distributions measured by the Parker Solar Probe SPAN-E instrument. Namely, we show that the distributions are consistent with Liouville’s theorem if an appropriate interplanetary potential is chosen. This potential, an outcome of our fitting method, is compared against the radial profiles of proton bulk flow energy. We find that the inferred potential is responsible for nearly 100 per cent of the proton acceleration in the solar wind at heliocentric distances 0.18-0.79 AU. These observations combine to form a coherent physical picture: the same interplanetary potential accounts for the acceleration of the solar wind protons as well as the evolution of the electron halo. In this picture the halo is formed from a sunward-propagating population that originates somewhere in the outer heliosphere by a yet-unknown mechanism.

79 ASTRONOMY AND ASTROPHYSICS↗