SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
The ADC model is a charge-collection model derived for simple p-n junction silicon diodes having a single reverse-biased p-n junction at one end and an ideal substrate contact at the other end. The present paper extends the model to include multiple junctions, and the goal is to estimate how collected charge is shared by the different junctions.
A previous rigorous mathematical analysis of drift-diffusion equations was used to investigate collected charge in a simple reverse-biased p-n junction diode exposed to an ionization source that liberates carriers (electron-hole pairs) in a quasi-neutral region within the diode. Each of two simple models was found to agree with the more rigorous analysis when carrier liberation is sufficiently intense. One is the sensitive volume (SV) model, and the other was called “ambipolar diffusion with a cutoff” (ADC). The earlier rigorous analysis was worked out in detail only for a localized source, i.e., a point source of carrier liberation, so it was able to validate the applicability of each simple model only for that case. The present paper treats an arbitrary spatial distribution of carrier generation and concludes that the ADC model remains valid for this more general case, but the SV model does