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At least 19 records

Radiation damage and annealing of amorphous silicon solar cells

Amorphous silicon solar cells were irradiated with 1 MeV electrons at the Space Environmental Effects Laboratory of the NASA Langley Research Center. The cells accumulated a total fluence of 10 to the 14th, 10 to the 15th, and 10 to the 16th electrons per square centimeter and exhibited increasing degradation with each irradiation. This degradation was tracked by evaluating the I-V curves for AM0 illumination and the relative spectral response. The observed radiation damage was reversed following an anneal of the cells under vacuum at 200 C for 2 hours.

Byvik, C. E.↗

Radiation resistance studies of amorphous silicon films

Hydrogenated amorphous silicon thin films were irradiated with 2.00 MeV helium ions using fluences ranging from 1E11 to 1E15 cm(-2). The films were characterized using photothermal deflection spectroscopy and photoconductivity measurements. The investigations show that the radiation introduces sub-band-gap states 1.35 eV below the conduction band and the states increase supralinearly with fluence. Photoconductivity measurements suggest the density of states above the Fermi energy is not changing drastically with fluence.

Woodyard, James R.↗

The U.S. and Japanese amorphous silicon technology programs A comparison

The U.S. Department of Energy/Solar Energy Research Institute Amorphous Silicon (a-Si) Solar Cell Program performs R&D on thin-film hydrogenated amorphous silicon for eventual development of stable amorphous silicon cells with 12 percent efficiency by 1988. The Amorphous Silicon Solar Cell Program in Japan is sponsored by the Sunshine Project to develop an alternate energy technology. While the objectives of both programs are to eventually develop a-Si photovoltaic modules and arrays that would produce electricity to compete with utility electricity cost, the U.S. program approach is research oriented and the Japanese is development oriented.

Shimada, K.↗

Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

Abu-Safe, Husam H.↗

Amorphous silicon carbide coatings for extreme ultraviolet optics

Amorphous silicon carbide films formed by sputtering techniques are shown to have high reflectance in the extreme ultraviolet spectral region. X-ray scattering verifies that the atomic arrangements in these films are amorphous, while Auger electron spectroscopy and Rutherford backscattering spectroscopy show that the films have composition close to stoichiometric SiC, although slightly C-rich, with low impurity levels. Reflectance vs incidence angle measurements from 24 to 1216 A were used to derive optical constants of this material, which are presented here. Additionally, the measured extreme ultraviolet efficiency of a diffraction grating overcoated with sputtered amorphous silicon carbide is presented, demonstrating the feasibility of using these films as coatings for EUV optics.

Kortright, J. B.↗

Hydrogenated amorphous silicon deposited by ion-beam sputtering

Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

Lowe, V. E.↗

Tests Of Amorphous-Silicon Photovoltaic Modules

Progress in identification of strengths and weaknesses of amorphous-silicon technology detailed. Report describes achievements in testing reliability of solar-power modules made of amorphous-silicon photovoltaic cells. Based on investigation of modules made by U.S. manufacturers. Modules subjected to field tests, to accelerated-aging tests in laboratory, and to standard sequence of qualification tests developed for modules of crystalline-silicon cells.

Ross, Ronald G., Jr.↗

Radiation resistance studies of amorphous silicon films

A study of hydrogenated amorphous silicon thin films irradiated with 2.00 MeV helium ions using fluences ranging from 1E11 to 1E15/sq cm is presented. The films were characterized using photothermal deflection spectroscopy, transmission and reflection spectroscopy, and photoconductivity and annealing measurements. Large changes were observed in the subband-gap optical absorption for energies between 0.9 and 1.7 eV. The steady-state photoconductivity showed decreases of almost five orders of magnitude for a fluence of 1E15/sq cm, but the slope of the intensity dependence of the photoconductivity remained almost constant for all fluences. Substantial annealing occurs even at room temperature, and for temperatures greater than 448 K the damage is completely annealed. The data are analyzed to describe the defects and the density of states function.

Payson, J. Scott↗

Preparation and Surface Analysis of a Fluorinated Amorphous Silicon for Photo-voltaic Device Application

Amorphous silicon films (a-Si:H) have been routinely deposited on a variety of substrates. Surface and interfacial studies were carried out with a PHI 5600 X-ray photo electron spectrometer. Co-deposition with fluorine yielded films having oxygen present as bulk oxide. The higher the fluorine content, the greater the amount of bulk oxygen observed. The presence of oxygen may be a contributing factor to inconsistent film properties of fluorine doped silicon materials, reported else where. A definite chemical interface between a layer containing fluorine and a layer made from pure silane has been delineated.

McWhinney, Hylton G.↗

Endurance Tests Of Amorphous-Silicon Photovoltaic Modules

Failure mechanisms in high-power service studied. Report discusses factors affecting endurance of amorphous-silicon solar cells. Based on field tests and accelerated aging of photovoltaic modules. Concludes that aggressive research needed if amorphous-silicon modules to attain 10-year life - value U.S. Department of Energy established as goal for photovoltaic modules in commercial energy-generating plants.

Ross, Ronald G., Jr.↗

The status of lightweight photovoltaic space array technology based on amorphous silicon solar cells

Ultralight, flexible photovoltaic (PV) array of amorphous silicon (a-Si) was identified as a potential low cost power source for small satellites. A survey was conducted of the status of the a-Si PV array technology with respect to present and future performance, availability, cost, and risks. For existing, experimental array blankets made of commercial cell material, utilizing metal foil substrates, the Beginning of Life (BOL) performance at Air Mass Zero (AM0) and 35 C includes total power up to 200 W, power per area of 64 W/sq m and power per weight of 258 W/kg. Doubling of power per weight occurs when polyimide substrates are used. Estimated End of Life (EOL) power output after 10 years in a nominal low earth orbit would be 80 pct. of BOL, the degradation being due to largely light induced effects (-10 to -15 pct.) and in part (-5 pct.) to space radiation. Predictions for the year 1995 for flexible PV arrays, made on the basis of published results for rigid a-Si modules, indicate EOL power output per area and per weight of 105 W/sq m and 400 W/kg, respectively, while predictions for the late 1990s based on existing U.S. national PV program goals indicate EOL values of 157 W/sq m and 600 W/kg. Cost estimates by vendors for 200 W ultralight arrays in volume of over 1000 units range from $100/watt to $125/watt. Identified risks include the lack of flexible, space compatible encapsulant, the lack of space qualification effort, recent partial or full acquisitions of US manufacturers of a-Si cells by foreign firms, and the absence of a national commitment for a long range development program toward developing of this important power source for space.

Hanak, Joseph J.↗

Integral bypass diodes in an amorphous silicon alloy photovoltaic module

Thin-film, tandem-junction, amorphous silicon (a-Si) photovoltaic modules were constructed in which a part of the a-Si alloy cell material is used to form bypass protection diodes. This integral design circumvents the need for incorporating external, conventional diodes, thus simplifying the manufacturing process and reducing module weight.

Hanak, J. J.↗

Failure analysis of thin-film amorphous-silicon solar-cell modules

A failure analysis of thin film amorphous silicon solar cell modules was conducted. The purpose of this analysis is to provide information and data for appropriate corrective action that could result in improvements in product quality and reliability. Existing techniques were expanded in order to evaluate and characterize degradational performance of a-Si solar cells. Microscopic and macroscopic defects and flaws that significantly contribute to performance degradation were investigated.

Kim, Q.↗

Corrosion In Amorphous-Silicon Solar Cells And Modules

Paper reports on corrosion in amorphous-silicon solar cells and modules. Based on field and laboratory tests, discusses causes of corrosion, ways of mitigating effects, and consequences for modules already in field. Suggests sealing of edges as way of reducing entry of moisture. Cell-free perimeters or sacrificial electrodes suggested to mitigate effects of sorbed moisture. Development of truly watertight module proves to be more cost-effective than attempting to mitigate effects of moisture.

Mon, Gordon R.↗

Accuracy and long-term stability of amorphous-silicon measurements

The measurement system requirements to obtain accurate electrical performance measurements of amorphous silicon cells and modules were described. The progress achieved in modifying the Jet Propulsion Laboratory (JPL) system toward that objective were reviewed.

Mueller, R.↗

Electrochemical degradation of amorphous-silicon photovoltaic modules

Techniques of module electrochemical corrosion research, developed during reliability studies of crystalline-silicon modules (C-Si), have been applied to this new investigation into amorphous-silicon (a-Si) module reliability. Amorphous-Si cells, encapsulated in the polymers polyvinyl butyral (PVB) and ethylene vinyl acetate (EVA), were exposed for more than 1200 hours in a controlled 85 C/85 percent RH environment, with a constant 500 volts applied between the cells and an aluminum frame. Plotting power output reduction versus charge transferred reveals that about 50 percent a-Si cell failures can be expected with the passage of 0.1 to 1.0 Coulomb/cm of cell-frame edge length; this threshold is somewhat less than that determined for C-Si modules.

Mon, G. R.↗

Long-term stability of amorphous-silicon modules

The Jet Propulsion Laboratory (JPL) program of developing qualification tests necessary for amorphous silicon modules, including appropriate accelerated environmental tests reveal degradation due to illumination. Data were given which showed the results of temperature-controlled field tests and accelerated tests in an environmental chamber.

Ross, R. G., Jr.↗

Investigation of the stability and 1.0 MeV proton radiation resistance of commercially produced hydrogenated amorphous silicon alloy solar cells

The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys is reported. A number of different device structures were irradiated with 1.0 MeV protons. The cells were annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters or fluences below 1(exp 14) cm(exp -2); fluences above 1(exp 14) cm(exp -2) require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed in dark I-V measurements. The current mechanisms were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

Lord, Kenneth R., II↗