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At least 19 records

Polarization Stability of Amorphous Piezoelectric Polyimides

Amorphous polyimides containing polar functional groups have been synthesized and investigated for potential use as high temperature piezoelectric sensors. The thermal stability of the piezoelectric effect of one polyimide was evaluated as a function of various curing and poling conditions under dynamic and static thermal stimuli. First, the polymer samples were thermally cycled under strain by systematically increasing the maximum temperature from 50 C to 200 C while the piezoelectric strain coefficient was being measured. Second, the samples were isothermally aged at an elevated temperature in air, and the isothermal decay of the remanent polarization was measured at room temperature as a function of time. Both conventional and corona poling methods were evaluated. This material exhibited good thermal stability of the piezoelectric properties up to 100 C.

Park, C.↗

Accuracy and long-term stability of amorphous-silicon measurements

The measurement system requirements to obtain accurate electrical performance measurements of amorphous silicon cells and modules were described. The progress achieved in modifying the Jet Propulsion Laboratory (JPL) system toward that objective were reviewed.

Mueller, R.↗

Long-term stability of amorphous-silicon modules

The Jet Propulsion Laboratory (JPL) program of developing qualification tests necessary for amorphous silicon modules, including appropriate accelerated environmental tests reveal degradation due to illumination. Data were given which showed the results of temperature-controlled field tests and accelerated tests in an environmental chamber.

Ross, R. G., Jr.↗

Thermal and structural stability of cosputtered amorphous Ta(x)Cu(1-x) alloy thin films on GaAs

The characteristics of thin films of Ta-Cu, prepared over a wide range of compositions by cosputter deposition onto GaAs and fused quartz substrates, are studied by X-ray diffraction and van der Pauw resistivity measurement. Results show films to be amorphous over the range of 55-95 at. pct, and show Ta(93)Cu(7) barriers to be effective in preventing Au in-diffusion, with a 3000-A layer remaining unpenetrated after an annealing at 700 C for 20 min. Diffusion of Ga and/or As into amorphous 93 at. pct Ta is found to be more rapid than that of Au, and interfacial reactions were shown to form compounds including Ta3Au, CuAu, TaAs2, and Ga3Cu7 above 700 C.

Oh, J. E.↗

Amorphous-Metal-Film Diffusion Barriers

Incorporation of N into Ni/W films reduces reactivity with Si substrate. Paper describes reactions between Si substrates and deposited amorphous Ni/W or Ni/N/W films. Thermal stability of amorphous Ni/W films as diffusion barriers in Si markedly improved by introduction of N into Ni/W films during deposition.

Nicolet, M. A.↗

Modelling of photodegradation in solar cell modules of substrate and superstrate design made with ethylene-vinyl acetate as pottant material

A computer model was developed which can generate realistic concentration versus time profiles of the chemical species formed during photooxidation of hydrocarbon polymers using as input data a set of elementary reactions with corresponding rate constants and initial conditions. The results of computer simulation have been shown to be consistent with the general experimental observations of the photooxidation of polyethylene exposed to sunlight at ambient temperatures. The useful lifetime (5% oxidation) of the unstabilized polyethylene is predicted to vary from a few months in hot weather (100 F) to almost two years in cool weather (45 F) with an apparent net activation energy of 10 kcal/mol. Modelling studies of alternate mechanisms for stabilization of clear, amorphous, linear polyethylene suggest that the optimum stabilizer would be a molecularly dispensed additive in very low concentration which can trap peroxy radicals and also decompose hydroperoxides.

Somersall, A. C.↗

New transformations between crystalline and amorphous ice

High-pressure optical and spectroscopic techniques were used to obtain directly the ice I(h) - hda-ice transformation in a diamond-anvil cell, and the stability of the amorphous form is examined as functions of pressure and temperature. It is demonstrated that hda-ice transforms abruptly at 4 GPa and 77 K to a crystalline phase close in structure to orientationally disordered ice-VII and to a more highly ordered, ice-VIII-like structure at higher temperatures. This is the first time that an amorphous solid is observed to convert to a crystalline solid at low temperatures by compression alone. Phase transitions of this type may be relevant on icy planetary satellites, and there may also be implications for the high-pressure behavior of silica.

Hemley, R. J.↗

Amorphous ice on Saturnian rings and on icy satellites - Its formation, stability, and observability

Saturnian rings and icy satellites may be covered with amorphous rather than crystalline ice. Its likely source is water molecules sputtered by particles in the radiation belts, it may be stable, and its presence could be deduced from the rate of temperature drop in a shadow. Observation of this effect is, however, difficult, especially for the rings. A possible relation to the brightness anisotropy of ring A is pointed out.

Smoluchowski, R.↗

Far-infrared spectral studies of phase changes in water ice induced by proton irradiation

Changes in the FIR spectrum of crystalline and amorphous water ice as a function of temperature are reported. The dramatic differences between the spectra of these ices in the FIR are used to examine the effect of proton irradiation on the stability of the crystalline and amorphous ice phases from 13 to 77 K. In particular, the spectra near 13 K show interconversion between the amorphous and crystalline ice phases beginning at doses near 2 eV/molecule and continuing cyclically with increased dose. The results are used to estimate the stability of irradiated ices in astronomical environments.

Moore, Marla H.↗

Investigation of the stability and 1.0 MeV proton radiation resistance of commercially produced hydrogenated amorphous silicon alloy solar cells

The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys is reported. A number of different device structures were irradiated with 1.0 MeV protons. The cells were annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters or fluences below 1(exp 14) cm(exp -2); fluences above 1(exp 14) cm(exp -2) require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed in dark I-V measurements. The current mechanisms were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

Lord, Kenneth R., II↗

Investigation of the Stability and 1.0 MeV Proton Radiation Resistance of Commercially Produced Hydrogenated Amorphous Silicon Alloy Solar Cells

The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys is reported. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below 1E14 sq cm fluences above 1E14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed In dark I-V measurements. The current mechanism were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

Lord, Kenneth R., II↗

Indigenous Organic Matter Associated with Unusual Low Temperature Aqueous Secondary Phases in the Mars Meteorite Nakhla

In freshly fractured chips of the Mars meteorite Nakhla, we found carbonaceous phases intimately associated with secondary aqueous alteration phases, both mineral and amorphous, interpreted to have formed through the low-temperature, mineral-water dissolution of the host Martian basalt.We have characterized the nature of carbonaceous matter and spatially associated secondary phases within Nakhla using a multidisciplinary suite of optical and electron beam instrumentation(Thomas-Keprta et al., 2022). Secondary Phases: The preserved secondary mineral phases are best described as ‘juvenile’ hydrated amorphous silica formed when water interacts with mafic rocks. Although amorphous silica on Earth rarely persists through geologic time due to alteration into other phases, e.g.,microcrystalline opal-CT and eventually quartz, the lack of maturation of primarily amorphous silica with embedded nano phase ferrihydrite in Nakhla infers these phases formed in a limited water environment by low temperature, circumneutral pH fluids stabilized by the presence of coexisting amorphous silica.Additionally, we report the presence of the ferrous hydroxycarbonate mineral chukanovite (Fe2(OH)2CO3)within some of the secondary mineral aggregates studied. Organic Matter:Indigenous Nakhla carbonaceous matter is present both in condensed phases and in a dispersed state spatially associated with secondary alteration phases. In the former, discrete refractory micron to submicron assemblages were identified that appear macromolecular in nature and, in several cases, associated with F and, in one case, significant N. While organically bound Fhas yet to be detected remotely on Mars, the identification of organic N within one of the carbonaceous phases is considered a prerequisite for Martian astrobiological potential. Summary: Neither the intimate association of carbonaceous matter with secondary phases nor the identification of chukanovite have been previously reported in any of the Martian meteorites.A variety of habitability-related metastable solid-phase, oxidation-reduction, and organic-molecular sample attributes in Nakhla formed hundreds of millions of years ago near Mars’ surface; these alteration products persisted on Mars until very recentlyand resemble the amorphous materials observed at Gale crater by Mars Science Laboratory CuriosityRover (Rampe et al., 2020).Similar phases may be expected to occur elsewhere on Mars (e.g., Jezerocrater). References: Rampe E. B. et al.(2020) Mineralogy and geochemistry of sedimentary rocks and eolian sediments in Gale crater, Mars: A review after six Earth years of exploration with Curiosity.Geochemistry80, 125605; Thomas-Keprta K.L. et al. (2022) Indigenous carbon-rich matter associated with unusual aqueous alteration features in Nakhla: Complex formation and preservation history. Geochim. et Cosmochim. Acta320, 41-78 (online).

Mars meteorite↗

Carbon Shields for Intercalated Fiber Conductors

Stability in air increased by depositing amorphous carbon. Initially graphite fibers intercalated (insertion of atoms or molecules between graphite layers). Next, conductor coated with diamondlike amorphous carbon. Coating applied in same chamber as intercalation reaction or alternate deposichamber is used. Deposition of carbon accomplished by any number of techniques. tion Ion-beam sputter-deposition and RF plasma techniques have been used, but dc plasma and others work also. Potential uses include conductive epoxy composites, tether conductors, signal wire, and power cables.

Banks, B. A.↗

Amorphous metallic films in silicon metallization systems

Diffusion barrier research was focussed on lowering the chemical reactivity of amorphous thin films on silicon. An additional area of concern is the reaction with metal overlays such as aluminum, silver, and gold. Gold was included to allow for technology transfer to gallium arsenide PV cells. Amorphous tungsten nitride films have shown much promise. Stability to annealing temperatures of 700, 800, and 550 C were achieved for overlays of silver, gold, and aluminum, respectively. The lower results for aluminum were not surprising because there is an eutectic that can form at a lower temperature. It seems that titanium and zirconium will remove the nitrogen from a tungsten nitride amorphous film and render it unstable. Other variables of research interest were substrate bias and base pressure during sputtering.

So, F.↗

Amorphous metallic films in silicon metallization systems

The general objective was to determine the potential of amorphous metallic thin films as a means of improving the stability of metallic contacts to a silicon substrate. The specific objective pursued was to determine the role of nitrogen in the formation and the resulting properties of amorphous thin-film diffusion barriers. Amorphous metallic films are attractive as diffusion barriers because of the low atomic diffusivity in these materials. Previous investigations revealed that in meeting this condition alone, good diffusion barriers are not necessarily obtained, because amorphous films can react with an adjacent medium (e.g., Si, Al) before they recrystallize. In the case of a silicon single-crystalline substrate, correlation exists between the temperature at which an amorphous metallic binary thin film reacts and the temperatures at which the films made of the same two metallic elements react individually. Amorphous binary films made of Zr and W were investigated. Both react with Si individually only at elevated temperatures. It was confirmed that such films react with Si only above 700 C when annealed in vacuum for 30 min. Amorphous W-N films were also investigated. They are more stable as barriers between Al and Si than polycrystalline W. Nitrogen effectively prevents the W-Al reaction that sets in at 500 C with polycrystalline W.

Nicolet, M. A.↗

Stable metallization for diamond and other materials

An adherent and metallurgically stable metallization system for diamond is presented. The big improvement in metallurgical stability is attributed to the use of a ternary, amorphous Ti--Si--N diffusion barrier. No diffusion between the layers and no delamination of the metallization was observed after annealing the schemes at 400.degree. C. for 100 hours and at 900.degree. C. for 30 minutes. Thermal cycling experiments in air from -65 to 155.degree. C. and adhesion tests were performed. Various embodiments are disclosed.

Bachli, Andreas↗