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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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This study is to determine the destructive single event effect susceptibility of the Analog Devices ADG201 quad SPST switch. The device under tested (DUT) was monitored for destructive events by exposing it to a heavy ion beam at the Texas A&M University’s (TAMU) K500 Cyclotron.
The Analog Devices ADV212 was initially tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in July of 2013. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI), soft data errors classified as single event upsets (SEU), and, of particular concern, single event latch-ups (SEL). All error types occurred so frequently as to make accurate measurements of the exposure time, and thus total particle fluence, challenging. To mitigate some of the risk posed by single event latch-ups, circuitry was added to the electrical design to detect a high current event and automatically recycle power and reboot the device. An additional heavy-ion test was scheduled to validate the operation of the recovery circuitry and the continuing functionality of the ADV212 after a substantial number of latch-up events. As a secondary goal, more precise data would be gathered by an improved test method, described in this test report.
Thermal analog devices predict thermal expansion and contraction of machine structures subjected to various heat inputs. Analog devices correct positioning of machine tools to compensate for distortion of machine frame.
Analog Devices’ AD654 was tested for total ionizing dose (TID) response beginning on February 13, 2017. This device has the Radiation Effects and Analysis Group Identification (REAG ID) number 16-036. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
The Analog Devices ADXL354 3-AXIS MEMS accelerometer was tested for single-event effects, both destructive and non-destructive. The device was characterized for single-event upset (SEU) sensitivity and evaluated for any possibility of single-event latchup (SEL), single-event dielectric rupture (SEDR) and single-event functional interrupts (SEFI). Single-event transient (SET) response was also monitored.
The Analog Devices (ADI) AD648 was tested for total ionizing dose response at the Goddard Space Flight Center (GSFC) Radiation Effects Facility (REF) beginning 1 June 2011. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
The purpose of this test was to characterize the Analog Devices ADXL354 parameter degradation for total dose response. In the test, the device was exposed to a dose rate of 50 rad(Si)/s or 0.5 Gy(Si)/s using a gamma radiation source in accordance with MIL-STD-883K Paragraph 3.6.1 (Condition A). Device parameters such as supply current, self-test voltage response, and LDO regulator output voltages were monitored.
The purpose of this testing was to obtain sample pulsed-laser-induced single event transients (SETs) of the Analog Devices AD620 Instrumentation Amplifier. The test was conducted at the Naval Research Laboratory using their two-photon absorption (TPA) laser.
An analog physiological simulator generates representative waveforms for a wide range of physiological conditions. Direct comparison of these waveforms with those from telemetric inputs permits quick detection of signal parameter degradation.
FET comparator circuit detects discrete analog computer output levels without excessively loading the output amplifier of the computer. An FET common source amplifier is coupled by a differential amplifier to a bistable transistor flip-flop. This circuit provides a digital output for analog voltages above or below a predetermined level.
This paper presents experimental results of fast intrinsic evolutionary design and evolutionary fault recovery of a 4-bit Digital to Analog Converter (DAC) using the JPL stand-alone board-level evolvable system (SABLES).
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This study is to characterize the destructive single-event latchup (SEL) susceptibility of the LTC1604AIG#90117 (LTC1604) analog/digital converter (ADC). The device was monitored for SEL current events on the power supplies during exposure to a heavy ion beam at Lawrence Berkeley National Laboratory (LBNL) 88-inch Cyclotron. Testing was performed on September 11, 2021.
This study was undertaken to determine the single event transient distribution of a transimpedance amplifier configuration of the AD8041 Operational Amplifier. The AD8041 is made in a bipolar technology and the application of interest has a bipolar supply of ±5 V. The device was monitored for transient events on the output voltage during exposure to a heavy ion beam at Lawrence Berkeley National Laboratory’s (LBNL) 88-inch Cyclotron.
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A self-contained power controller having a power driver switch, programmable controller, communication port, and environmental parameter measuring device coupled to a controllable device. The self-contained power controller needs only a single voltage source to power discrete devices, analog devices, and the controlled device. The programmable controller has a run mode which, when selected, upon the occurrence of a trigger event changes the state of a power driver switch and wherein the power driver switch is maintained by the programmable controller at the same state until the occurrence of a second event.
The fabrication and performance of WO3-based, solid-state, three-terminal device configurations as programmable analog memory elements are reported. These transistorlike device structures exhibit good resistance progammability with a remarkable resolution of a few percent of the resistive strength over a four orders of magnitude dynamic range. The most critical component of these devices is an insulating layer between the active WO3 and the cation donor layer. The progamming characteristics and operation mechanisms of the device are described, and probable reaction mechanisms critical to the device stability are discussed.
Analog charge-coupled devices and sampled data filtering have developed into mature disciplines. Each discipline offers the other wide systems advantages where alone it would be impractical. This letter explores these advantages in a number of implementations against the scale of wide low-cost applications.