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Results for “antilocalization, nonlinear Hall effect, topological insulators”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

One-dimensional antilocalization of electrons from spin disorder probed by nonlinear Hall effect

In recent years, nonreciprocal transport measurement has emerged as a probe of spin orbit interaction, spin texture, superconductivity, and other fundamental properties of materials. Here, we study the nonlinear Hall effect (NLHE) in Bi 2 Se 3 /CoFeB heterostructures measured by second harmonic voltage method. Magneto-optical Kerr effect measurements demonstrate the origin of the NLHE to be the asymmetric magnon scattering mechanism. Moreover, a linear relation between the nonlinear Hall resistance and the electron phase coherence length of Bi 2 Se 3 is observed between 5 and 50 K. In this work, we propose a phenomenological model that explains the enhancement of the NLHE below 50 K as a result of one-dimensional antilocalization of electrons from spin disorder, enabled by spin-momentum locking and conservation of angular momentum.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Observation of nonlinear planar Hall effect in magnetic-insulator–topological-insulator heterostructures

Interfacing topological insulators (TIs) with magnetic insulators (MIs) have been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak antilocalization or appearance of the anomalous Hall effect as signatures of the magnetic proximity effect (MPE) imposed to TIs. Here, in this work, we report the observation of the nonlinear planar Hall effect (NPHE) in Bi 2 ⁢Se 3 films grown on MI thulium and yttrium-iron-garnet (TmIG and YIG) substrates, which is an order of magnitude larger than that in Bi 2 ⁢Se 3 grown on nonmagnetic gadolinium-gallium-garnet (GGG) substrate. The nonlinear Hall resistance in TmIG/Bi 2 ⁢Se 3 depends linearly on the external magnetic field, while that in YIG/Bi 2 ⁢Se 3 exhibits an extra hysteresis loop around zero field. The magnitude of the NPHE is found to scale inversely with carrier density. We speculate that the observed NPHE is related to the MPE-induced exchange gap opening and out-of-plane spin textures in the TI surface states, which may be used as an alternative transport signature of the MPE in MI/TI heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗