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At least 19 records

Optimum antireflection coating for Antireflection-coated Metal-Oxide-Semiconductor /AMOS/ solar cells

Consideration is given to the design of a single-layer optimum antireflection coating for AMOS (antireflection-coated metal-oxide-semiconductor) solar cells to match the entire sunlight spectrum. The energy conversion efficiency is maximized by maximizing the open-circuit voltage and the short-circuit current. The former is maximized by oxidation techniques and the latter is maximized by the light-coupling into the solar cell. With reference to the effective index of refraction as obtained by ellipsometry, examples of optimum antireflection coatings for 60-A Au-GaAs solar cells are presented.

Yeh, Y. C. M.↗

Sequential Infiltration Synthesis of Bilayer Porous Alumina Nanostructures for Broad-Angle, Broadband Antireflective Coatings

Antireflective coatings (ARCs) are thin films engineered to reduce light reflections. Delivering broadband, wide-angle performance is essential for photovoltaics, imaging, and sensing, yet truly omnidirectional antireflection remains difficult due to angle-dependent optical paths and a narrow palette of suitable refractive indices. Here, in this study, we systematically investigate an emerging class of multilayer inorganic ARCs based on conformally coated nanoporous alumina templated by intrinsically microporous polymers (PIMs) and block copolymers (BCPs). We establish a design framework that maps thickness reflectance relationships to identify thickness pairs minimizing reflection across wavelength and incidence angle. We show that deliberately separating the local reflectance minima of the top and bottom layers in bilayer nanostructures broadens the antireflective bandwidth and angular range. We show that 235-nm single-side bilayer porous alumina nanostructures achieves under 2 % reflectance from 380–750 nm for incidence angles up to 45° with less than 0.6% reflectance for incidence angles under 20°. The approach is readily extensible to additional layers or materials with refractive indices tuned via templated nanoporosity and composition, enabling practical, etch-free ARC fabrication without HF or fluorinated precursors and advancing straightforward design of broadband, wide-angle (quasi-omnidirectional) ARCs for next-generation optical systems.

antireflective coatings↗

Nanotip Carpets as Antireflection Surfaces

Carpet-like random arrays of metal-coated silicon nanotips have been shown to be effective as antireflection surfaces. Now undergoing development for incorporation into Sun sensors that would provide guidance for robotic exploratory vehicles on Mars, nanotip carpets of this type could also have many uses on Earth as antireflection surfaces in instruments that handle or detect ultraviolet, visible, or infrared light. In the original Sun-sensor application, what is required is an array of 50-micron-diameter apertures on what is otherwise an opaque, minimally reflective surface, as needed to implement a miniature multiple-pinhole camera. The process for fabrication of an antireflection nanotip carpet for this application (see Figure 1) includes, and goes somewhat beyond, the process described in A New Process for Fabricating Random Silicon Nanotips (NPO-40123), NASA Tech Briefs, Vol. 28, No. 1 (November 2004), page 62. In the first step, which is not part of the previously reported process, photolithography is performed to deposit etch masks to define the 50-micron apertures on a silicon substrate. In the second step, which is part of the previously reported process, the non-masked silicon area between the apertures is subjected to reactive ion etching (RIE) under a special combination of conditions that results in the growth of fluorine-based compounds in randomly distributed formations, known in the art as "polymer RIE grass," that have dimensions of the order of microns. The polymer RIE grass formations serve as microscopic etch masks during the next step, in which deep reactive ion etching (DRIE) is performed. What remains after DRIE is the carpet of nano - tips, which are high-aspect-ratio peaks, the tips of which have radii of the order of nanometers. Next, the nanotip array is evaporatively coated with Cr/Au to enhance the absorption of light (more specifically, infrared light in the Sun-sensor application). The photoresist etch masks protecting the apertures are then removed by dipping the substrate into acetone. Finally, for the Sun-sensor application, the back surface of the substrate is coated with a 57-nm-thick layer of Cr for attenuation of sunlight.

Bae, Youngsam↗

Pulse-length dependence of the laser-induced damage behavior of a fused-silica antireflective metasurface

A broadband, antireflective metasurface optic on a silica substrate is subjected to laser-induced damage-threshold measurements to quantify its performance under exposure to high-intensity/fluence laser pulses in the near-infrared at four pulse durations, ranging from 20 fs to 1.4 ns. The performance of the metasurface is benchmarked against that obtained from an equivalent bare fused-silica substrate that did not receive reactive-ion-etching metasurface treatment. Results showed that the damage threshold of the antireflective metasurface was always lower than the input-surface damage threshold of the untreated substrate. The damage initiations with nanosecond and picosecond pulses resulted in localized modification and removal of the nanostructures, whereas the onset of laser-induced modification with 20-fs pulses in a vacuum environment manifested as changes in the optical and electronic properties without significant material removal. The broader goal of this work is to develop a preliminary understanding of the laser-induced failure mechanisms of silica-based metasurface optics.

antireflection↗

Effects of positive ion implantation into antireflection coating of silicon solar cells

The state of technological development of Si solar cells for highest obtained efficiency and radiation resistance is summarized. The various theoretical analyses of Si solar cells are reviewed. It is shown that factors controlling blue response are carrier diffusion length, surface recombination, impurity concentration profile in surface region, high level of surface impurity concentration (degeneracy), reflection coefficient of oxide, and absorption coefficient of Si. The theory of ion implantation of charge into the oxide antireflection coating is developed and side effects are discussed. The experimental investigations were directed at determining whether the blue response of Si solar cells could be improved by phosphorus ion charges introduced into the oxide antireflection coating.

Middleton, A. E.↗

Studies and testing of antireflective (AR) coatings for soda-lime glass

Processes for producing antireflection films on glass are concentrated in three areas: acid etching of glass, plasma etching of glass, and acid development of sodium silicate films on glass. The best transmission was achieved through the acid etching technique, while the most durable films were produced from development of sodium silicate films. Control of the acid etching technique is presently inadequate for production implementation. While films having excellent antireflective properties were fabricated by plasma etching techniques, all were water soluble.

Pastirik, E. M.↗

Antireflection Overcoat For Submillimeter Wavelengths

Coating thickness not critical. Polytetrafluoroethylene antireflection overcoat reduces specular reflectance of opaque baffle coating by factor of nearly 2 at millimeter and infrared wavelengths. Easily applied by spraying Teflon(TM) Wet Lubricant (or equivalent) on opague coated surface. Though technique makes it difficult to control thickness of overcoat, experimental and theoretical studies indicate thickness has little effect because antireflective property based on creating graded-index absorber.

Smith, Sheldon M.↗

UV testing of solar cells: Effects of antireflective coating, prior irradiation, and UV source

Short-circuit current degradation of electron irradiated double-layer antireflective-coated cells after 3000 hours ultraviolet (UV) exposure exceeds 3 percent; extrapolation of the data to 10(exp 5) hours (11.4 yrs.) gives a degradation that exceeds 10 percent. Significant qualitative and quantitative differences in degradation were observed in cells with double- and single-layer antireflective coatings. The effects of UV-source age were observed and corrections were made to the data. An additional degradation mechanism was identified that occurs only in previously electron-irradiated solar cells since identical unirradiated cells degrade to only 6 +/- 3 percent when extrapolated 10(exp 5) hours of UV illumination.

Meulenberg, A.↗

Design of a three-layer antireflection coating for high efficiency indium phosphide solar cells using a chemical oxide as first layer

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 mu m of the surface of the illuminated cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3-layer AR coating for thermally diffused p+n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p+ emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as an efficient antireflective layer yielding a measured record high AMO open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3 and MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductors materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating should work well for all III-V compound-based solar cells.

Moulot, Jacques↗

Design of a Three-Layer Antireflection Coating for High Efficiency Indium Phosphide Solar Cells Using a Chemical Oxide as First Layer

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 microns of the illuminated surface of the cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with the p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally, a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown, thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3- layer AR coating for thermally diffused p(+)n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p(+) emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as a fairly efficient antireflective layer yielding a measured record high AM0, 25 C, open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3, MgF2 or ZnS, MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductor materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating, should work well for essentially all III-V compound-based solar cells.

Moulot, Jacques↗

Advanced Antireflection Coatings for High-Performance Solar Energy Applications

Phase II objectives: Develop and refine antireflection coatings incorporating lanthanum titanate as an intermediate refractive index material; Investigate wet/dry thermal oxidation of aluminum containing semiconductor compounds as a means of forming a more transparent window layer with equal or better optical properties than its unoxidized form; Develop a fabrication process that allows integration of the oxidized window layer and maintains the necessary electrical properties for contacting the solar cell; Conduct an experimental demonstration of the best candidates for improved antireflection coatings.

Pan, Noren↗

Diagnosis of PV Cell Antireflective Coating Degradation Resulting From Hot-Humid High-Voltage Potential Aging

Corrosion of the antireflective coating on a photovoltaic cell ("ARc corrosion") has previously been observed in studies using hot-humid test conditions with external high-voltage (HV) bias. This study primarily focuses on known vulnerable legacy aluminum back surface field cells in mini-modules (MiMos) put through comparative stepped stress tests. Each cell type had MiMos at +1500 V, -1500 V, or unbiased ("Voc") potential, which were sequentially subjected to test conditions of 60 degrees C/60% relative humidity (RH) for 96 h, as in International Electrotechnical Commission Technical Specification 62804-1; 70 degrees C/70% RH for 200 h; and 85 degrees C/85% RH for 200 h. Characterizations at each step included visual camera and electroluminescence (EL) imaging, colorimetry, and current-voltage curve tracing. Final characterizations included: Suns-Voc, spatial mapping of external quantum efficiency, high-resolution photoluminescence, EL, and dark lock-in thermography imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy, and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos from previous studies that underwent stepped HV aging and separate outdoor aged full-sized modules. ARc corrosion was specifically seen for the glass/encapsulant/cell side of the +1500 V (HV+) stressed MiMos and modules. Appearance, color, and reflectance were the most distinguishing characteristics relative to glass corrosion, gridline corrosion and delamination, and other concurrent degradation modes. SEM/EDS and SAM identified the conversion of silicon nitride to hydrated silica, hydrous silica, or hydrated amorphous silica, which preferentially occurred at the edges and tips of the pyramidal textured cell surface.

14 SOLAR ENERGY↗

Diagnosis of PV Cell Antireflective Coating Degradation Resulting from Hot-Humid, High Voltage Potential Aging

Corrosion of the antireflective coating on a photovoltaic cell ("ARc corrosion") has previously been observed in studies using hot-humid test conditions with external high-voltage (HV) bias. This study primarily focuses on known vulnerable, legacy aluminum back surface field (Al-BSF) cells in mini-modules (MiMos) put through comparative stepped stress tests. Each cell type had MiMos at +1500 V, -1500 V, or unbiased ("Voc") potential, which were sequentially subjected to test conditions of 60deg C/60% relative humidity (RH) for 96 h, as in International Electrotechnical Commission (IEC) Technical Specification 62804-1; 70 deg C/70% RH for 200 h; and 85 deg C/85% RH for 200 h. Characterizations at each step included visual camera and electroluminescence (EL) imaging, colorimetry, and current-voltage (I-V) curve tracing. Final characterizations included: Suns-Voc; spatial mapping of external quantum efficiency (EQE); high-resolution photoluminescence (PL), EL, and dark lock-in thermography (DLIT) imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos from previous studies that underwent stepped HV aging and separate outdoor aged full-sized modules. ARc corrosion was specifically seen for the glass/encapsulant/cell side of the +1500V (HV+) stressed MiMos and modules. Appearance, color, and reflectance were the most distinguishing characteristics relative to glass corrosion, gridline-corrosion and -delamination as well as other concurrent degradation modes. SEM/EDS and SAM identified conversion of silicon nitride to hydrated silica, hydrous silica, or hydrated amorphous silica, which preferentially occurred at the edges and tips of the pyramidal textured cell surface.

14 SOLAR ENERGY↗

Silicon Nanotips Antireflection Surface for Micro Sun Sensor

We have developed a new technique to fabricate antireflection surface using silicon nano-tips for use on a micro sun sensor for Mars rovers. We have achieved randomly distributed nano-tips of radius spanning from 20 nm to 100 nm and aspect ratio of ~200 using a two-step dry etching process. The 30(deg) specular reflectance at the target wavelength of 1 (mu)m is only about 0.09 %, nearly three orders of magnitude lower than that of bare silicon, and the hemispherical reflectance is ~ 8%. By changing the density and aspect ratio of these nanotips, the change in reflectance is demonstrated. Using surfaces covered with these nano-tips, the critical problem of ghost images that are caused by multiple internal reflections in a micro sun sensor was solved.

antireflection↗

Far-infrared filters utilizing small particle scattering and antireflection coatings

High-transmission, low-pass scatter filters for blocking at wavelengths from 3.5 to 50 microns and single-layer antireflection coatings for optical materials used in the 25- to 300-micron region of the spectrum are described. The application of both techniques to liquid-He-cooled filters permits the construction of efficient low-pass and medium-width bandpass filters for use throughout the far infrared.

Armstrong, K. R.↗

A 15% efficient antireflection-coated metal-oxide-semiconductor solar cell

A new effect is being developed which significantly improves the conversion efficiency of antireflection-coated metal-oxide-semiconductor (AMOS) solar cells. The effect, a marked increase in the open-circuit voltage, is produced by the addition of an oxide layer to the semiconductor. Cells using gold on n-type gallium arsenide have been made with efficiencies up to 15% in terrestrial sunlight. All processing steps are amenable to the use of low-cost polycrystalline films of GaAs in place of the single crystals now used.

Stirn, R. J.↗