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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Effects of non-invasive brain stimulation on associative memory

Associative memory refers to remembering the association between two items, such as a face and a name. It is a crucial part of daily life, but it is also one of the first aspects of memory performance that is impacted by aging and by Alzheimer’s disease. Evidence suggests that transcranial direct current stimulation (tDCS) can improve memory performance, but few tDCS studies have investigated its impact on associative memory. In addition, no prior study of the effects of tDCS on memory performance has systematically evaluated the impact of tDCS on different types of memory assessments, such as recognition and recall tests. In this study, we measured the effects of tDCS on associative memory performance in healthy adults, using both recognition and recall tests. Participants studied face-name pairs while receiving either active (30 minutes, 2 mA) or sham (30 minutes, 0.1 mA) stimulation with the anode placed at F9 and the cathode placed on the contralateral upper arm. Participants in the active stimulation group performed significantly better on the recall test than participants in the sham group, recalling 50% more names, on average, and making fewer recall errors. However, the two groups did not differ significantly in terms of their performance on the recognition memory test. This investigation provides evidence that stimulation at the time of study improves associative memory encoding, but that this memory benefit is evident only under certain retrieval conditions.

60 APPLIED LIFE SCIENCES↗
NASA NTRS1988

Kanerva's sparse distributed memory: An associative memory algorithm well-suited to the Connection Machine

The advent of the Connection Machine profoundly changes the world of supercomputers. The highly nontraditional architecture makes possible the exploration of algorithms that were impractical for standard Von Neumann architectures. Sparse distributed memory (SDM) is an example of such an algorithm. Sparse distributed memory is a particularly simple and elegant formulation for an associative memory. The foundations for sparse distributed memory are described, and some simple examples of using the memory are presented. The relationship of sparse distributed memory to three important computational systems is shown: random-access memory, neural networks, and the cerebellum of the brain. Finally, the implementation of the algorithm for sparse distributed memory on the Connection Machine is discussed.

Rogers, David↗
DOE OSTI2015

Design and testing of the first 2D Prototype Vertically Integrated Pattern Recognition Associative Memory

An associative memory-based track finding approach has been proposed for a Level 1 tracking trigger to cope with increasing luminosities at the LHC. The associative memory uses a massively parallel architecture to tackle the intrinsically complex combinatorics of track finding algorithms, thus avoiding the typical power law dependence of execution time on occupancy and solving the pattern recognition in times roughly proportional to the number of hits. This is of crucial importance given the large occupancies typical of hadronic collisions. The design of an associative memory system capable of dealing with the complexity of HL-LHC collisions and with the short latency required by Level 1 triggering poses significant, as yet unsolved, technical challenges. For this reason, an aggressive R&D program has been launched at Fermilab to advance state of-the-art associative memory technology, the so called VIPRAM (Vertically Integrated Pattern Recognition Associative Memory) project. The VIPRAM leverages emerging 3D vertical integration technology to build faster and denser Associative Memory devices. The first step is to implement in conventional VLSI the associative memory building blocks that can be used in 3D stacking, in other words, the building blocks are laid out as if it is a 3D design. In this paper, we report on the first successful implementation of a 2D VIPRAM demonstrator chip (protoVIPRAM00). The results show that these building blocks are ready for 3D stacking.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1992

Experimental Optoelectronic Associative Memory

Optoelectronic associative memory responds to input image by displaying one of M remembered images. Which image to display determined by optoelectronic analog computation of resemblance between input image and each remembered image. Does not rely on precomputation and storage of outer-product synapse matrix. Size of memory needed to store and process images reduced.

Chao, Tien-Hsin↗
NASA NTRS1993

Optoelectronic associative memory

An associative optical memory including an input spatial light modulator (SLM) in the form of an edge enhanced liquid crystal light valve (LCLV) and a pair of memory SLM's in the form of liquid crystal televisions (LCTV's) forms a matrix array of an input image which is cross correlated with a matrix array of stored images. The correlation product is detected and nonlinearly amplified to illuminate a replica of the stored image array to select the stored image correlating with the input image. The LCLV is edge enhanced by reducing the bias frequency and voltage and rotating its orientation. The edge enhancement and nonlinearity of the photodetection improves the orthogonality of the stored image. The illumination of the replicate stored image provides a clean stored image, uncontaminated by the image comparison process.

Chao, Tien-Hsin↗
DOE OSTI2024

Active oscillatory associative memory

Traditionally, physical models of associative memory assume conditions of equilibrium. Here, we consider a prototypical oscillator model of associative memory and study how active noise sources that drive the system out of equilibrium, as well as nonlinearities in the interactions between the oscillators, affect the associative memory properties of the system. Our simulations show that pattern retrieval under active noise is more robust to the number of learned patterns and noise intensity than under passive noise. To understand this phenomenon, we analytically derive an effective energy correction due to the temporal correlations of active noise in the limit of short correlation decay time. We find that active noise deepens the energy wells corresponding to the patterns by strengthening the oscillator couplings, where the more nonlinear interactions are preferentially enhanced. Using replica theory, we demonstrate qualitative agreement between this effective picture and the retrieval simulations. Our work suggests that the nonlinearity in the oscillator couplings can improve memory under nonequilibrium conditions.

Chemistry↗
DOE OSTI2018

An FPGA-based Pattern Recognition Associative Memory

Pattern recognition associative memory (PRAM) devices are parallel processing engines which are used to tackle the complex combinatorics of track nding algorithms, particularly for silicon based tracking triggers. PRAM development has been mostly limited to the realm of ASICs, which often leads to lengthy and expensive design cycles. FPGAs allow for quick iterations, making them an ideal hardware platform for designing and evaluating new PRAM features before committing to silicon. In this paper we present our FPGA-based PRAM designs and discuss how logic blocks which were originally developed for ASICs have been redesigned to take advantage of modern FPGA architectures.

43 PARTICLE ACCELERATORS↗
DOE OSTI2018

Differential Age Effects of Transcranial Direct Current Stimulation on Associative Memory

Abstract Objectives Older adults experience associative memory deficits relative to younger adults (Old & Naveh-Benjamin, 2008). The aim of this study was to test the effect of transcranial direct current stimulation (tDCS) on face-name associative memory in older and younger adults. Method Experimenters applied active (1.5 mA) or sham (0.1 mA) stimulation with the anode placed over the left dorsolateral prefrontal cortex (dlPFC) during a face-name encoding task, and measured both cued recall and recognition performance. Participants completed memory tests immediately after stimulation and after a 24-h delay to examine both immediate and delayed stimulation effects on memory. Results Results showed improved face-name associative memory performance for both recall and recognition measures, but only for younger adults, whereas there was no difference between active and sham stimulation for older adults. For younger adults, stimulation-induced memory improvements persisted after a 24-h delay, suggesting delayed effects of tDCS after a consolidation period. Discussion Although effective in younger adults, these results suggest that older adults may be resistant to this intervention, at least under the stimulation parameters used in the current study. This finding is inconsistent with a commonly seen trend, where tDCS effects on cognition are larger in older than younger adults.

Leach, Ryan C.↗
NASA NTRS1990

Automatic ground control point recognition with parallel associative memory

The basic principle of the associative memory is to match the unknown input pattern against a stored training set, and responding with the 'closest match' and the corresponding label. Generally, an associative memory system requires two preparatory steps: selecting attributes of the pattern class, and training the system by associating patterns with labels. Experimental results gained from using Parallel Associative Memory are presented. The primary concern is an automatic search for ground control points in aerial photographs. Synthetic patterns are tested followed by real data. The results are encouraging as a relatively high level of correct matches is reached.

Al-Tahir, Raid↗
NASA NTRS1991

Trinary Associative Memory Would Recognize Machine Parts

Trinary associative memory combines merits and overcomes major deficiencies of unipolar and bipolar logics by combining them in three-valued logic that reverts to unipolar or bipolar binary selectively, as needed to perform specific tasks. Advantage of associative memory: one obtains access to all parts of it simultaneously on basis of content, rather than address, of data. Consequently, used to exploit fully parallelism and speed of optical computing.

Liu, Hua-Kuang↗
NASA NTRS1995

Two Unipolar Terminal-Attractor-Based Associative Memories

Two unipolar mathematical models of electronic neural network functioning as terminal-attractor-based associative memory (TABAM) developed. Models comprise sets of equations describing interactions between time-varying inputs and outputs of neural-network memory, regarded as dynamical system. Simplifies design and operation of optoelectronic processor to implement TABAM performing associative recall of images. TABAM concept described in "Optoelectronic Terminal-Attractor-Based Associative Memory" (NPO-18790). Experimental optoelectronic apparatus that performed associative recall of binary images described in "Optoelectronic Inner-Product Neural Associative Memory" (NPO-18491).

Liu, Hua-Kuang↗
NASA NTRS1989

High density associative memory

A multi-layered, thin-film, digital memory having associative recall. There is a first memory matrix and a second memory matrix. Each memory matrix comprises, a first layer comprising a plurality of electrically separated row conductors; a second layer comprising a plurality of electrically separated column conductors intersecting but electrically separated from the row conductors; and, a plurality of resistance elements electrically connected between the row condutors and the column conductors at respective intersections of the row conductors and the column conductors, each resistance element comprising, in series, a first resistor of sufficiently high ohmage to conduct a sensible element current therethrough with virtually no heat-generating power consumption when a low voltage as employed in thin-film applications is applied thereacross and a second resistor of sufficiently high ohmage to conduct no sensible current therethrough when a low voltage as employed in thin-film applications is applied thereacross, the second resistor having the quality of breaking down to create a short therethrough upon the application of a breakdown level voltage across the first and second resistors.

Moopenn, Alexander W.↗
NASA NTRS1989

Auto- and hetero-associative memory using a 2-D optical logic gate

An optical associative memory system suitable for both auto- and hetero-associative recall is demonstrated. This system utilizes Hamming distance as the similarity measure between a binary input and a memory image with the aid of a two-dimensional optical EXCLUSIVE OR (XOR) gate and a parallel electronics comparator module. Based on the Hamming distance measurement, this optical associative memory performs a nearest neighbor search and the result is displayed in the output plane in real-time. This optical associative memory is fast and noniterative and produces no output spurious states as compared with that of the Hopfield neural network model.

Chao, Tien-Hsin↗
NASA NTRS1993

Unipolar terminal-attractor based neural associative memory with adaptive threshold

A unipolar terminal-attractor based neural associative memory (TABAM) system with adaptive threshold for perfect convergence is presented. By adaptively setting the threshold values for the dynamic iteration for the unipolar binary neuron states with terminal-attractors for the purpose of reducing the spurious states in a Hopfield neural network for associative memory and using the inner product approach, perfect convergence and correct retrieval is achieved. Simulation is completed with a small number of stored states (M) and a small number of neurons (N) but a large M/N ratio. An experiment with optical exclusive-OR logic operation using LCTV SLMs shows the feasibility of optoelectronic implementation of the models. A complete inner-product TABAM is implemented using a PC for calculation of adaptive threshold values to achieve a unipolar TABAM (UIT) in the case where there is no crosstalk, and a crosstalk model (CRIT) in the case where crosstalk corrupts the desired state.

Liu, Hua-Kuang↗
NASA NTRS1996

Unipolar Terminal-Attractor Based Neural Associative Memory with Adaptive Threshold

A unipolar terminal-attractor based neural associative memory (TABAM) system with adaptive threshold for perfect convergence is presented. By adaptively setting the threshold values for the dynamic iteration for the unipolar binary neuron states with terminal-attractors for the purpose of reducing the spurious states in a Hopfield neural network for associative memory and using the inner-product approach, perfect convergence and correct retrieval is achieved. Simulation is completed with a small number of stored states (M) and a small number of neurons (N) but a large M/N ratio. An experiment with optical exclusive-OR logic operation using LCTV SLMs shows the feasibility of optoelectronic implementation of the models. A complete inner-product TABAM is implemented using a PC for calculation of adaptive threshold values to achieve a unipolar TABAM (UIT) in the case where there is no crosstalk, and a crosstalk model (CRIT) in the case where crosstalk corrupts the desired state.

Liu, Hua-Kuang↗
DOE OSTI2014

Adiabatic quantum optimization for associative memory recall

Hopfield networks are a variant of associative memory that recall patterns stored in the couplings of an Ising model. Stored memories are conventionally accessed as fixed points in the network dynamics that correspond to energetic minima of the spin state. We show that memories stored in a Hopfield network may also be recalled by energy minimization using adiabatic quantum optimization (AQO). Numerical simulations of the underlying quantum dynamics allow us to quantify AQO recall accuracy with respect to the number of stored memories and noise in the input key. We investigate AQO performance with respect to how memories are stored in the Ising model according to different learning rules. Our results demonstrate that AQO recall accuracy varies strongly with learning rule, a behavior that is attributed to differences in energy landscapes. Consequently, learning rules offer a family of methods for programming adiabatic quantum optimization that we expect to be useful for characterizing AQO performance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Performance Study of the First 2D Prototype of Vertically Integrated Pattern Recognition Associative Memory (VIPRAM)

Extremely fast pattern recognition capabilities are necessary to find and fit billions of tracks at the hardware trigger level produced every second anticipated at high luminosity LHC (HL-LHC) running conditions. Associative Memory (AM) based approaches for fast pattern recognition have been proposed as a potential solution to the tracking trigger. However, at the HL-LHC, there is much less time available and speed performance must be improved over previous systems while maintaining a comparable number of patterns. The Vertically Integrated Pattern Recognition Associative Memory (VIPRAM) Project aims to achieve the target pattern density and performance goal using 3DIC technology. The first step taken in the VIPRAM work was the development of a 2D prototype (protoVIPRAM00) in which the associative memory building blocks were designed to be compatible with the 3D integration. In this paper, we present the results from extensive performance studies of the protoVIPRAM00 chip in both realistic HL-LHC and extreme conditions. Results indicate that the chip operates at the design frequency of 100 MHz with perfect correctness in realistic conditions and conclude that the building blocks are ready for 3D stacking. We also present performance boundary characterization of the chip under extreme conditions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗