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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

First-Principles Simulation of Beam-Induced Processes Underlying Atomic Manipulation in Electron Microscopes

The development of experimental methods and apparatuses capable of promoting atomically precise material manipulations holds great promise for realizing the ultimate limit of feature miniaturization in materials and devices. The ability to modify materials atom by atom is anticipated to usher in new technologies in areas as diverse as separation science, medicine, and quantum information science. Historically, scanning probe-based techniques have been the most prominent approaches in this space. However, these methods are best suited for the manipulation of surface-exposed regions of materials, as the strong perturbations required for bond scission are delivered most effectively to atoms in the near-proximity to the scanning probe. In contrast, convergent electron beams with energies tuned slightly below the threshold for inducing irreversible knock-on damage have recently been employed (within scanning transmission electron microscopy) to promote atomic-scale bond rearrangements in various beam-stable solids. Currently, however, the efficiency and selectivity of beam-induced atomic manipulation processes with focused electron beams are such that long irradiation times are required to induce a desired atomic rearrangement. With a better understanding of the underlying physics dictating the outcome of a given irradiation event, methods can be devised to improve the efficiency of these techniques so that their promise can be fully realized through widespread adoption.To this end, this Account details our recent efforts to develop and apply tractable first-principles simulation approaches for studying the response of materials to electric beam-like external electric potentials applied in real space. We briefly review the concepts and capabilities in the area of atomically precise materials manipulation and review the early demonstrations of accomplishments in this area, focusing on studies using scanned convergent electron beam probes in particular. We expound upon the depth of the challenge and identify critical shortcomings of theoretical methods that have previously been employed in the simulation of beam-induced processes. We then describe the computational methods that we have generalized from the concepts and tools most commonly applied to the study of molecular photochemistry and how our adaptations of these methods can be employed to capture the relevant dynamical phenomena for beam-induced processes ranging from the initial electron scattering to the ensuing multistate reactions. Here, we contextualize these methods within the current state of the art in this area, which has historically focused primarily on the simulation of inelastic image formation in the electron microscope for the purpose of interpreting the results of quantitative electron microscopy experiments. We demonstrate that the spatial distribution of state-specific excitation rates due to the presence of an external (probe) electric charge is inhomogeneous, such that irradiation at particular locations in materials can favor specific electronic transitions (and disallow others). In addition to the potential for excited-state reaction pathways to be accessed through the initial inelastic scattering of the tightly focused electron beam from the targeted atoms, we also identify favorable conditions for the electronically nonadiabatic evolution of the highly vibrationally excited system to open complex multistate reaction pathways. Implications of the early results for understanding the mechanisms and potential routes to improved efficiency and selectivity in beam-induced reactions are discussed. We conclude with a summary of the current state of theory and modeling capabilities in this area and provide our perspective on future directions for theoretical and experimental developments that we view as crucial to advancing the use of convergent electron beams in mode-specific, atomically precise platforms for direct-write materials modifications.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Atomic Manipulation of Single Erbium on GaAs(110): From Adatom Motion to Creation and Control of Bistable Substitutions

We demonstrate atomic-scale control over the position and configuration of single erbium (Er) atoms at the GaAs(110) surface using scanning tunneling microscopy (STM). By applying voltage pulses from the STM tip, we drive Er adatoms to move sequentially among three distinct adsorption sites and controllably substitute into Ga lattice sites. The resulting substitutional Er atoms exhibit two isoelectronic configurations that differ by less than one angstrom in lateral position and can be reversibly switched by additional voltage pulses. Differential conductance spectroscopy shows differences in the unoccupied local electronic states for the two substitutional configurations, and an absence of mid-gap states. Preliminary density functional theory (DFT) calculations support these findings, identifying the most stable adsorption and substitutional sites, their relative binding energies, charge states, and local density of states (LDOS) characteristics. Together, the experimental and theoretical results establish a method for precise, reversible manipulation of rare-earth dopants at semiconductor surfaces, opening a pathway to engineer atomic-scale quantum and optoelectronic functionalities.

Poche, Steven [Ohio State University]↗
DOE OSTI2018

167-PFlops Deep Learning for Electron Microscopy: From Learning Physics to Atomic Manipulation

An artificial intelligence system called MENNDL, which used 25,200 Nvidia Volta GPUs on Oak Ridge National Laboratory’s Summit machine, automatically designed an optimal deep learning network in order to extract structural information from raw atomic-resolution microscopy data. In a few hours, MENNDL creates and evaluates millions of networks using a scalable, parallel, asynchronous genetic algorithm augmented with a support vector machine to automatically find a superior deep learning network topology and hyper-parameter set than a human expert can find in months. For the application of electron microscopy, the system furthers the goal of improving our understanding of the electron-beam-matter interactions and real-time image-based feedback, which enables a huge step beyond human capacity toward nanofabricating materials automatically. Finally, MENNDL has been scaled to the 4,200 available nodes of Summit achieving a measured 152.5 PFlops, with an estimated sustained performance of 167 PFlops when the entire machine is available.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2018

167-PFlops deep learning for electron microscopy: from learning physics to atomic manipulation

An artificial intelligence system called MENNDL, which used 25,200 NVIDIA Volta GPUs on Oak Ridge National Laboratory's Summit machine, automatically designed an optimal deep learning network in order to extract structural information from raw atomic-resolution microscopy data. In a few hours, MENNDL creates and evaluates millions of networks using a scalable, parallel, asynchronous genetic algorithm augmented with a support vector machine to automatically find a superior deep learning network topology and hyper-parameter set than a human expert can find in months. For the application of electron microscopy, the system furthers the goal of improving our understanding of the electron-beam-matter interactions and real-time image-based feedback, which enables a huge step beyond human capacity towards nanofabricating materials automatically. MENNDL has been scaled to the 4,200 available nodes of Summit achieving a measured 152.5 PFlops, with an estimated sustained performance of 167 PFlops when the entire machine is available.

Patton, Robert↗
DOE OSTI2019

Atomic-Scale Manipulation and In Situ Characterization with Scanning Tunneling Microscopy

Scanning tunneling microscope (STM) has presented a revolutionary methodology to nanoscience and nanotechnology. It enables imaging of the topography of surfaces, mapping the distribution of electronic density of states, and manipulating individual atoms and molecules, all at atomic resolutions. In particular, atom manipulation capability has evolved from fabricating individual nanostructures toward the scalable production of the atomic-sized devices bottom-up. The combination of precision synthesis and in situ characterization has enabled direct visualization of many quantum phenomena and fast proof-of-principle testing of quantum device functions with immediate feedback to guide improved synthesis. Several representative examples are reviewed to demonstrate the recent development of atomic-scale manipulation, focusing on progress that addresses quantum properties by design in several technologically relevant materials systems. Integration of several atomically precisely controlled probes in a multiprobe STM system vastly extends the capability of in situ characterization to a new dimension where the charge and spin transport behaviors can be examined from mesoscopic to atomic length scale. The automation of atomic-scale manipulation and the integration with well-established lithographic processes further push this bottom-up approach to a new level that combines reproducible fabrication, extraordinary programmability, and the ability to produce large-scale arrays of quantum structures.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Probing Electron Beam Induced Transformations on a Single-Defect Level via Automated Scanning Transmission Electron Microscopy

A robust approach for real-time analysis of the scanning transmission electron microscopy (STEM) data streams, based on ensemble learning and iterative training (ELIT) of deep convolutional neural networks, is implemented on an operational microscope, enabling the exploration of the dynamics of specific atomic configurations under electron beam irradiation via an automated experiment in STEM. Combined with beam control, this approach allows studying beam effects on selected atomic groups and chemical bonds in a fully automated mode. Here, in this study, we demonstrate atomically precise engineering of single vacancy lines in transition metal dichalcogenides and the creation and identification of topological defects in graphene. The ELIT-based approach facilitates direct on-the-fly analysis of the STEM data and engenders real-time feedback schemes for probing electron beam chemistry, atomic manipulation, and atom by atom assembly.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

0D Nanocrystals as Light‐Driven, Localized Charge‐Injection Sources for the Contactless Manipulation of Atomically Thin 2D Materials

A contactless charge‐injection scheme that allows the local and quasi‐permanent manipulation of atomically thin 2D materials, such as monolayer (1L‐)MoS 2 , over spatial extents of several tens of micrometers, is reported. The possibility to precisely position and localize the charge‐injection source to the micrometer scale post‐fabrication allows the investigation of local unperturbed electronic structure of the 2D material. Thanks to this novel approach, the important impact of sample inhomogeneity on the charge‐carrier percolation that occurs over the entire extent of the 2D flake and proliferates up to 40 μm away from the localized charge injection is elucidated. The apparent driving force for carrier relocation is the initial inhomogeneous electronic landscape of the 2D material. These studies demonstrate that local and contactless charge injection with submicrometer precision delivers an alternative route for charge injection and indicates that local 2D material electronic structure can serve as a key element for novel nanoscale device design.

Ghini, Michele↗
DOE OSTI2024

Atomic-scale manipulation of buried graphene–silicon carbide interface by local electric field

Abstract Precision of scanning tunneling microscopy (STM) enables control of matter at scales of single atoms. However, transition from atomic-scale manipulation strategies to practical devices encounters fundamental problems in protection of the designer structures formed atop the surface. In this context, STM manipulation of subsurface structures on technologically relevant materials is encouraging. Here, we propose a material platform and protocols for precise manipulation of a buried graphene interface. We show that an electric field from the STM tip reversibly controls breaking and restoring of covalent bonds between the graphene buffer layer and the SiC substrate. The process involves charge redistribution at the atomically sharp interface plane under the epitaxial graphene layer(s). This buried manipulation platform is laterally defined by unit cells from the corresponding (6×6) SiC moiré lattice of the epitaxial graphene. Local and reversible electric-field-induced patterning of graphene heterostructures from the bottom interface creates an alternative architecture concept for their applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2018

Molecular flexure and atom trapping with sexiphenyl molecules by scanning tunneling microscope manipulation

Molecular flexure, and molecule-metal contact of para-sexiphenyl molecules on a Ag(111) surface are investigated by using low temperature scanning tunneling microscopy, and molecular manipulations. Atom trapping with sexiphenyl molecules is realized by laterally manipulating the molecules onto individual silver atoms and up to three silver atoms have been trapped. We also demonstrate breaking of a silver dimer into individual silver atoms by atom trapping. STM manipulation experiments show that the molecule-metal complexes formed by the atom trapping are mechanically stable. Moreover, Lateral manipulation of a single sexiphenyl across a Ag(111) atomic step highlights how the molecule moves across step-edges; the molecule can easily conform across the step and it recovers original configuration after the manipulation.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Direct Fabrication of Atomically Defined Pores in MXenes Using Feedback-Driven STEM

Controlled fabrication of nanopores in 2D materials offer the means to create robust membranes needed for ion transport and nanofiltration. Techniques for creating nanopores have relied upon either plasma etching or direct irradiation; however, aberration-corrected scanning transmission electron microscopy (STEM) offers the advantage of combining a sub-Å sized electron beam for atomic manipulation along with atomic resolution imaging. Here, for this work, a method for automated nanopore fabrication is utilized with real-time atomic visualization to enhance the mechanistic understanding of beam-induced transformations. Additionally, an electron beam simulation technique, Electron-Beam Simulator (E-BeamSim) is developed to observe the atomic movements and interactions resulting from electron beam irradiation. Using the MXene Ti 3 C 2 T x , the influence of temperature on nanopore fabrication is explored by tracking atomic transformations and find that at room temperature the electron beam irradiation induces random displacement and results in titanium pileups at the nanopore edge, which is confirmed by E-BeamSim. At elevated temperatures, after removal of the surface functional groups and with the increased mobility of atoms results in atomic transformations that lead to the selective removal of atoms layer by layer. This work can lead to the development of defect engineering techniques within functionalized MXene layers and other 2D materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

The Radical Atom: Mechanosynthetic 3D Printing of an Atomically Precise SPM Tip

This research effort sought to overcome current limitations in scanning probe-based atomic manipulation to enable atomically precise manufacturing (APM). Previous theoretical and experimental works on atom by atom and molecule by molecule fabrication of precise structures are limited to essentially to two-dimensions. APM will enable a paradigm shift in 21st century manufacturing practices in which every single atom in a electronic chip, device or machine can be placed in an exact and predefined position in three-dimensions. By providing a general method for generating reproducible SPM tip structure, this project will drive forward the entire field of atomically precise scanning probe microscopy, opening the door to positional control of nearly arbitrary covalent chemistry. Such control could, for example, be used in applications such as novel 2.5 or 3D microchip fabrication. The creation of a unique manufacturing method through APM has the potential to impact technologies at the theoretical limits of performance, weight, and utility including: solid-state quantum and spintronic computing systems, high efficiency optical antenna, solar power systems, defect engineered materials and extremely efficient catalysts. Although this experiment focused on pick-and-place non-scalable APM, the better understanding of the chemistry is crucial to the eventual goal of scalable APM. To place individual atoms into a specified location is a seminal aspiration of researchers and engineers in the many fields and may have early premium applications in medical devices and microelectronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Atomic-scale manipulation of polar domain boundaries in monolayer ferroelectric In 2 Se 3

Domain boundaries have been intensively investigated in bulk ferroelectric materials and two-dimensional materials. Many methods such as electrical, mechanical and optical approaches have been utilized to probe and manipulate domain boundaries. So far most research focuses on the initial and final states of domain boundaries before and after manipulation, while the microscopic understanding of the evolution of domain boundaries remains elusive. In this paper, we report controllable manipulation of the domain boundaries in two-dimensional ferroelectric In 2 Se 3 with atomic precision using scanning tunneling microscopy. We show that the movements of the domain boundaries can be driven by the electric field from a scanning tunneling microscope tip and proceed by the collective shifting of atoms at the domain boundaries. Our density functional theory calculations reveal the energy path and evolution of the domain boundary movement. The results provide deep insight into domain boundaries in two-dimensional ferroelectric materials and will inspire inventive applications of these materials.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Dimensional tuning of Majorana fermions and real space counting of the Chern number

We demonstrate that it is possible to use atomic manipulation techniques to adiabatically tune between one-dimensional and two-dimensional topological superconductors in magnet-superconductor hybrid (MSH) structures. This allows one to change the nature of the associated Majorana fermions between localized bound states and chiral Majorana edge modes, and provides a new approach for counting the topological invariant of the system – the Chern number – in real space. Moreover, we show that the topological nature of finite-size MSH structures can be characterized using the Chern number density which adiabatically connects MSH structures to macroscopic, translationally invariant topological superconductors characterized by an integer Chern number. These results open new possibilities for studying the nature of topological superconductivity in MSH structures using atomic manipulation techniques.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Topological superconductivity in skyrmion lattices

Atomic manipulation and interface engineering techniques have provided an intriguing approach to custom-designing topological superconductors and the ensuing Majorana zero modes, representing a paradigm for the realization of topological quantum computing and topology-based devices. Magnet-superconductor hybrid (MSH) systems have proven to be experimentally suitable to engineer topological superconductivity through the control of both the complex structure of its magnetic layer and the interface properties of the superconducting surface. Here, we demonstrate that two-dimensional MSH systems containing a magnetic skyrmion lattice provide an unprecedented ability to control the emergence of topological phases. By changing the skyrmion radius, which can be achieved experimentally through an external magnetic field, one can tune between different topological superconducting phases, allowing one to explore their unique properties and the transitions between them. In these MSH systems, Josephson scanning tunneling spectroscopy spatially visualizes one of the most crucial aspects underlying the emergence of topological superconductivity, the spatial structure of the induced spin–triplet correlations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Astigmatism-free 3D optical tweezer control for rapid atom rearrangement

Reconfigurable neutral-atom arrays are a promising platform for quantum computing, quantum simulation, and quantum metrology, but atom transport using frequency-chirped acousto-optic deflectors (AODs) is limited by chirp-induced acoustic lensing and trajectory distortion. We address these limitations using a three-dimensional acousto-optic deflector lens (3D-AODL), a design predicted to reduce long-range transport times by more than a factor of two. We further introduce fading-Shepard waveforms that circumvent finite AOD bandwidth, enabling sustained axial displacement. We demonstrate unrestricted three-dimensional optical-tweezer motion over a 200 μm × 200 μm × 136 μm volume with velocities exceeding 4.2 m/s. Arbitrary three-dimensional control of optical-tweezer trajectories enables rapid atom rearrangement and dynamical engineering of optical potentials in tweezer arrays and optical lattices. This capability advances quantum control and atom manipulation in neutral-atom quantum processors by enabling faster rearrangement, higher clock rates, and scalable sorting in complex geometries.

Lu, Yue-Hui [University of California, Berkeley, C↗