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Atomic processes in the polar cap
Polar cap atomic processes stimulated by photons, electrons and protons, considering particle morphology
Atomic processes in plasmas.
Measuring atomic radiation and collision cross section coefficients of plasmas
Competing atomic processes in Ba and Sr injection critical velocity experiments
The critical ionization velocity effect requires a superthermal electron population to ionize through collisional impact. Such superthermal electrons can however lose energy to competing atomic processes, as well as to ionization, thus limiting the efficiency of the effect. Considering Ba and Sr magnetospheric injection experiments designed to test the CIV theory, it is found that in both cases roughly 60 percent of the superthermal electron energy is lost on exciting line radiation. Moreover, energy loss to background neutral oxygen places a strict limit on the injected cloud densities for which critical velocity effects are possible; a finding which explains the consistently negative results in radial injection experiments.
The MIGDAL experiment: Measuring a rare atomic process to aid the search for dark matter
We present the Migdal In Galactic Dark mAtter expLoration (MIGDAL) experiment aiming at the unambiguous observation and study of the so-called Migdal effect induced by fast-neutron scattering. It is hoped that this elusive atomic process can be exploited to enhance the reach of direct dark matter search experiments to lower masses, but it is still lacking experimental confirmation. Our goal is to detect the predicted atomic electron emission which is thought to accompany nuclear scattering with low, but calculable, probability, by deploying an Optical Time Projection Chamber filled with a low-pressure gas based on CF 4 . Initially, pure CF 4 will be used, and then in mixtures containing other elements employed by leading dark matter search technologies — including noble species, plus Si and Ge. High resolution track images generated by a Gas Electron Multiplier stack, together with timing information from scintillation and ionisation readout, will be used for 3D reconstruction of the characteristic event topology expected for this process — an arrangement of two tracks sharing a common vertex, with one belonging to a Migdal electron and the other to a nuclear recoil. Different energy-loss rate distributions along both tracks will be used as a powerful discrimination tool against background events. In this article we present the design of the experiment, informed by extensive particle and track simulations and detailed estimations of signal and background rates. In pure CF 4 we expect to observe 8.9 (29.3) Migdal events per calendar day of exposure to an intense D–D (D–T) neutron generator beam at the NILE facility located at the Rutherford Appleton Laboratory (UK). With our nominal assumptions, 5σ median discovery significance can be achieved in under one day with either generator.
Quantum networks with neutral atom processing nodes
Abstract Quantum networks providing shared entanglement over a mesh of quantum nodes will revolutionize the field of quantum information science by offering novel applications in quantum computation, enhanced precision in networks of sensors and clocks, and efficient quantum communication over large distances. Recent experimental progress with individual neutral atoms demonstrates a high potential for implementing the crucial components of such networks. We highlight latest developments and near-term prospects on how arrays of individually controlled neutral atoms are suited for both efficient remote entanglement generation and large-scale quantum information processing, thereby providing the necessary features for sharing high-fidelity and error-corrected multi-qubit entangled states between the nodes. We describe both the functionality requirements and several examples for advanced, large-scale quantum networks composed of neutral atom processing nodes.
Atomic Processes in X-ray Photoioinzed Gas
It has long been known that photoionization and photoabsorption play a dominant role in determining the state of gas in nebulae surrounding hot stars and in active galaxies. Recent observations of X-ray spectra demonstrate that these processes are also dominant in highly ionized gas near compact objects, and also affect the transmission of X-rays from the majority of astronomical sources. This has led to new insights into the understanding of what is going on in these sources. It has also pointed out the need for accurate atomic cross sections for photoionization and absorption, notably for processes involving inner shells. The xstar code can be used for calculating the heating, ionization and reprocessing of X-rays by gas in a range of ionization states and temperatures. It has recently been updated to include an improved treatment of inner shell transitions in iron. I will review the capabilities of xstar, the atomic data, and illustrate some applications to recent X-ray spectral observations.
Powder satellite-reduction apparatus and method for gas atomization process
The broad applicability of at least certain aspects of the present invention derives from the ability to determine the critical location where secondary satellite formation occurs for any atomization system or design and allows for the rapid assessment of the effectiveness of various satellite reduction strategies, including but not limited to several embodiments detailed herein. Aspects of this invention can be utilized during initial atomization system design in order to evaluate effective chamber geometries and enabling strategies which reduce/eliminate satelliting, or can be retrofit to existing systems and allows for economic evaluation of effectiveness based off of initial capital expenditures versus increased operating requirements/expenses.
Atomic Processes in X-ray Photoionized Gas
It has long been known that photoionization and photoabsorption play a dominant role in determining the state of gas in nebulae surrounding hot stars and in active galaxies. Recent observations of X-ray spectra demonstrate that these processes are also dominant in highly ionized gas near compact objects, and also affect the transmission of X-rays from the majority of astronomical sources. This has led to new insights into the understanding of what is going on in these sources. It has also pointed out the need for a better atomic cross sections for photoionization and absorption, notably for processes involving inner shells. In this talk I will discuss these issues, what is known and where more work is needed.
Atomic processes in astrophysics.
Studies of particle excitation processes in the solar corona are reviewed, covering electron affinities, negative ion experiments using two-photon laser and drift tube techniques, geometrical hindrance in molecular ion formation, negative ion-molecule reactions, and negative ions in the ionosphere and astrophysics. Aspects of forbidden atomic transitions are also discussed, including the calculation of transition probabilities, the Fe II problem, and magnetic quadrupole radiation in a relativistic approximation.
Novel Non-Atomizing Process for Producing Powder for Additive Manufacturing
Oak Ridge National Laboratory (ORNL) worked with Metal Powder Works (MPW) to demonstrate feasibility of MPW proprietary DirectPowder™ process to fabricate powder from DuAlumin-3D (ORNL developed high temperature additively manufactured - AM - aluminum) alloy ingots. Adoption of DirectPowder™ process powder has significant potential to reduce cost, energy expenditure, eliminate CO 2 emissions, and provide a higher quality product.
Atomic processes in a low-density hydrogen- helium plasma
H-He partially ionized plasma bremsstrahlung, radiative and dielectronic recombination, discrete levels excitation and collisional ionization
Calculations of atomic processes in Fe XVII
A synoptic study has been made of the neon-like ion Fe XVII in order to improve knowledge of its line production in high-temperature, low-density plasmas. The following were computed: (1) distorted wave, electron collision strengths from the ground level to all 88 levels with one n = 3 - or n = 4 electron; (2) a complete cascade matrix; (3) the contribution of resonances to the n = 3 level population rates; and (4) the resulting X-ray and EUV line emission coefficients as functions of temperature between T = 10 to the 5.6 and T = 10 to the 8.4 K. Results are presented for typical population rates, line emission coefficients fitted with a useful formula for spectrum calculations, and the dielectronic recombination rate.
Enabling Numerical Modeling of Extreme-Intensity Laser Produced Dense Plasma
We have developed physics models of extreme intensity laser-matter interaction, x-ray and γ-ray emissions, and x-ray absorption (e.g. photoionization and Auger atomic processes). The atomic processes are solved self-consistently with radiation transport, which is coupled to our collisional particle-in-cell code, PICLS. Together with a significantly improved photoionization model our capability of simulation has been extended to account for detailed atomic and radiation physics during intense optical laser-matter interaction and also the XFEL-matter interaction.
First-Principles Simulation of Beam-Induced Processes Underlying Atomic Manipulation in Electron Microscopes
The development of experimental methods and apparatuses capable of promoting atomically precise material manipulations holds great promise for realizing the ultimate limit of feature miniaturization in materials and devices. The ability to modify materials atom by atom is anticipated to usher in new technologies in areas as diverse as separation science, medicine, and quantum information science. Historically, scanning probe-based techniques have been the most prominent approaches in this space. However, these methods are best suited for the manipulation of surface-exposed regions of materials, as the strong perturbations required for bond scission are delivered most effectively to atoms in the near-proximity to the scanning probe. In contrast, convergent electron beams with energies tuned slightly below the threshold for inducing irreversible knock-on damage have recently been employed (within scanning transmission electron microscopy) to promote atomic-scale bond rearrangements in various beam-stable solids. Currently, however, the efficiency and selectivity of beam-induced atomic manipulation processes with focused electron beams are such that long irradiation times are required to induce a desired atomic rearrangement. With a better understanding of the underlying physics dictating the outcome of a given irradiation event, methods can be devised to improve the efficiency of these techniques so that their promise can be fully realized through widespread adoption.To this end, this Account details our recent efforts to develop and apply tractable first-principles simulation approaches for studying the response of materials to electric beam-like external electric potentials applied in real space. We briefly review the concepts and capabilities in the area of atomically precise materials manipulation and review the early demonstrations of accomplishments in this area, focusing on studies using scanned convergent electron beam probes in particular. We expound upon the depth of the challenge and identify critical shortcomings of theoretical methods that have previously been employed in the simulation of beam-induced processes. We then describe the computational methods that we have generalized from the concepts and tools most commonly applied to the study of molecular photochemistry and how our adaptations of these methods can be employed to capture the relevant dynamical phenomena for beam-induced processes ranging from the initial electron scattering to the ensuing multistate reactions. Here, we contextualize these methods within the current state of the art in this area, which has historically focused primarily on the simulation of inelastic image formation in the electron microscope for the purpose of interpreting the results of quantitative electron microscopy experiments. We demonstrate that the spatial distribution of state-specific excitation rates due to the presence of an external (probe) electric charge is inhomogeneous, such that irradiation at particular locations in materials can favor specific electronic transitions (and disallow others). In addition to the potential for excited-state reaction pathways to be accessed through the initial inelastic scattering of the tightly focused electron beam from the targeted atoms, we also identify favorable conditions for the electronically nonadiabatic evolution of the highly vibrationally excited system to open complex multistate reaction pathways. Implications of the early results for understanding the mechanisms and potential routes to improved efficiency and selectivity in beam-induced reactions are discussed. We conclude with a summary of the current state of theory and modeling capabilities in this area and provide our perspective on future directions for theoretical and experimental developments that we view as crucial to advancing the use of convergent electron beams in mode-specific, atomically precise platforms for direct-write materials modifications.
Rapid Fabrication of Lightweight SiC Optics using Reactive Atom Plasma (RAP) Processing
Reactive Atom Plasma (RAP) processing is a non-contact, plasma-based processing technology that can be used to generate damage-free optical surfaces. We have developed tools and processes using RAP that allow us to shape extremely lightweight mirror Surfaces made from extremely hard-to-machine materials (e.g. SiC). We will describe our latest results using RAP in combination with other technologies to produce finished lightweight SiC mirrors and also discuss applications for RAP in the rapid fabrication of mirror segments for reflective and grazing incidence telescopes.
A neural master equation framework for multiscale modeling of molecular processes: application to atomic-scale plasma processes
Plasma-surface interactions (PSI) play a crucial role in microelectronics fabrication; however, their multiscale nature and array of complex, often unknown interactions make computational modeling of PSIs extremely difficult. To this end, we propose a general neural master equation (NME) framework that uses master equations to describe the dynamics of a molecular process, wherein neural networks learned from atomistic simulations represent unknown transitions between different system states. By leveraging the physics-based structure of master equations and data-driven state transitions, the NME framework promotes generalizability and physics interpretability, and can bridge disparate length and time scales. The framework is demonstrated for multiscale modeling of Si atomic layer etching and reactive ion etching, where the learned NME-based surface kinetic models exhibit good predictive and extrapolative capabilities for predicting experimentally relevant observables as a function of process parameters. The NME-based surface kinetic models obey physical constraints, which are violated in models based on neural ordinary differential equations. The proposed NME framework for multiscale modeling of molecular processes can pave the way for the discovery of new chemistries and materials in atomic-scale plasma processes.
Atomic Precision Processing of Two-Dimensional Materials for Next-Generation Microelectronics
The growth of the information era economy is driving the pursuit of advanced materials for microelectronics, spurred by exploration into “Beyond CMOS” and “More than Moore” paradigms. Atomically thin 2D materials, such as transition metal dichalcogenides (TMDCs), show great potential for next-generation microelectronics due to their properties and defect engineering capabilities. This perspective delves into atomic precision processing (APP) techniques like atomic layer deposition (ALD), epitaxy, atomic layer etching (ALE), and atomic precision advanced manufacturing (APAM) for the fabrication and modification of 2D materials, essential for future semiconductor devices. Additive APP methods like ALD and epitaxy provide precise control over composition, crystallinity, and thickness at the atomic scale, facilitating high-performance device integration. Subtractive APP techniques, such as ALE, focus on atomic-scale etching control for 2D material functionality and manufacturing. In APAM, modification techniques aim at atomic-scale defect control, offering tailored device functions and improved performance. Achieving optimal performance and energy efficiency in 2D material-based microelectronics requires a comprehensive approach encompassing fundamental understanding, process modeling, and high-throughput metrology. Finally, the outlook for APP in 2D materials is promising, with ongoing developments poised to impact manufacturing and fundamental materials science. Integration with advanced metrology and codesign frameworks will accelerate the realization of next-generation microelectronics enabled by 2D materials.