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At least 19 records

Avalanche Photodiode Statistics in Triggered-avalanche Detection Mode

The output of a triggered avalanche mode avalanche photodiode is modeled as Poisson distributed primary avalanche events plus conditionally Poisson distributed trapped carrier induced secondary events. The moment generating function as well as the mean and variance of the diode output statistics are derived. The dispersion of the output statistics is shown to always exceed that of the Poisson distribution. Several examples are considered in detail.

Tan, H. H.↗

Surface-sensitive photon avalanche behavior revealed by single-avalanching-nanoparticle imaging

Avalanching nanoparticles (ANPs) are a new class of lanthanide-based upconverting material demonstrating steep optical nonlinearities with the potential to advance applications ranging from subwavelength bioimaging to neuromorphic computing, nanothermometry, and pressure transduction. Here, we use single-nanocrystal imaging to uncover design-dependent heterogeneity in ANP threshold intensity (I th ). Quantitative comparisons between distributions of I th and ANP shell properties reveal correlations between mean I th values, histogram widths, and nanocrystal shell thickness. Evaluating avalanching behaviors using an established model of shell-dependent surface energy transfer shows that variations in shell thickness-and the resultant energy transfer through the shell to the surface and environment-are likely the primary contributor to ANP-to-ANP I th heterogeneity. Further, nanocrystals with an ~6 nm average shell thickness show I th heterogeneity beyond the extent expected from statistical measurements of shell size and variability using transmission electron microscopy (TEM). Here these results provide a principal guide for the design and application of ANPs to environmental sensing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Avalanche transport of energetic-ions in magnetic confinement plasmas: nonlinear multiple wave-number simulation

Large burst activity, identified as toroidal Alfvén eigenmode (TAE) avalanche, occurs frequently in neutral-beam heated plasmas in National Spherical Torus Experiment (NSTX). Based on the typical experimental observation of TAE avalanche on NSTX, a self-consistent nonlinear multiple wave-number (k ∥ ≃ n/R, where n toroidal mode-number and R major radius) simulation associated with TAE avalanches is performed using the experimental parameters and profiles before the occurrence of TAE avalanche as the M3D-K input. The wave–wave nonlinear coupling among different modes and the resonant interaction between different modes and energetic-ions during TAE avalanches are identified in the nonlinear multiple wave-number simulations. The resonance overlap during the TAE avalanche is clearly observed in the simulation. It is found that the effective wave–wave coupling and a sufficiently strong drive are two important ingredients for the onset of TAE avalanches. TAE avalanche is considered to be a strongly nonlinear process and it is always accompanied by the simultaneous rapid frequency-chirping and large amplitude bursting of multiple modes and significant energetic-ion losses. The experimental phenomenon is observed on NSTX and is qualitatively reproduced by the simulation results in this work. These findings indicate that the onset of avalanche is triggered by nonlinearity of the system, and are also conducive to understanding the underlying mechanism of avalanche transport of energetic particles in the future burning plasmas, such as International Thermonuclear Experiment Reactor.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Application of LANDSAT data to delimitation of avalanche hazards in Montane Colorado

The author has identified the following significant results. Many avalanche hazard zones can be identified on LANDSAT imagery, but not consistently over a large region. Therefore, regional avalanche hazard mapping, using LANDSAT imagery, must draw on additional sources of information. A method was devised that depicts three levels of avalanche hazards according to three corresponding levels of certainty that active avalanches occur. The lowest level, potential avalanche hazards, was defined by delineating slopes steep enough to support avalanches at elevations where snowfall was likely to be sufficient to produce a thick snowpack. The intermediate level of avalanche hazard was interpreted as avalanche hazard zones. These zones have direct and indirect indicators of active avalanche activity and were interpreted from LANDSAT imagery. The highest level of known or active avalanche hazards was compiled from existing maps. Some landslides in Colorado were identified and, to a degree, delimited on LANDSAT imagery, but the conditions of their identification were highly variable. Because of local topographic, geologic, structural, and vegetational variations, there was no unique landslide spectral appearance.

Knepper, D. H., Jr.↗

Giant nonlinear optical responses from photon-avalanching nanoparticles

Avalanche phenomena use steeply nonlinear dynamics to generate disproportionately large responses from small perturbations, and are found in a multitude of events and materials. Photon avalanching enables technologies such as optical phase-conjugate imaging, infrared quantum counting and efficient upconverted lasing. However, the photon-avalanching mechanism underlying these optical applications has been observed only in bulk materials and aggregates, limiting its utility and impact. In this study we report the realization of photon avalanching at room temperature in single nanostructures-small, Tm 3+ -doped upconverting nanocrystals-and demonstrate their use in super-resolution imaging in near-infrared spectral windows of maximal biological transparency. Avalanching nanoparticles (ANPs) can be pumped by continuous-wave lasers, and exhibit all of the defining features of photon avalanching, including clear excitation-power thresholds, exceptionally long rise time at threshold, and a dominant excited-state absorption that is more than 10,000 times larger than ground-state absorption. Beyond the avalanching threshold, ANP emission scales nonlinearly with the 26th power of the pump intensity, owing to induced positive optical feedback in each nanocrystal. This enables the experimental realization of photon-avalanche single-beam super-resolution imaging with sub-70-nanometre spatial resolution, achieved by using only simple scanning confocal microscopy and without any computational analysis. Pairing their steep nonlinearity with existing super-resolution techniques and computational methods, ANPs enable imaging with higher resolution and at excitation intensities about 100 times lower than other probes. The low photon-avalanching threshold and excellent photostability of ANPs also suggest their utility in a diverse array of applications, including sub-wavelength imaging and optical and environmental sensing.

36 MATERIALS SCIENCE↗

Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch

One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al 2 O 3 /Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.

42 ENGINEERING↗

The application of Landsat data to mapping avalanche hazards

Two test areas, representing a variety of avalanche hazards, were selected in the San Juan Mountains of Colorado. Midwinter Landsat digital data were analyzed using a clustering technique, and the results compared to 1:24,000 scale maps of avalanche hazards derived from air photo interpretation and field surveys. Confined avalanches were readily identified because of the high contrast between the snow covered avalanche track and the adjacent forested slopes. Unconfined avalanches could not be identified without supplementary topographic data. Spatial characteristics were of primary importance in delineating avalanche tracks. Spatial resolution was the limiting factor in avalanche detection. Landsat data should prove useful for rapid reconnaissance mapping of avalanche hazards, particularly in the absence of other data sources.

Waterman, S.↗

Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate

The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device commercialization. Here, in this work, we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm 2 ) both being the highest reported in GaN devices on foreign substrates. The PSS enables a lower dislocation density than conventional sapphire substrate and is employed in high-voltage GaN devices for the first time. The avalanche voltage in the circuit test reaches 98% of the parallel-plane limit, further affirming that near-ideal avalanche breakdown can be realized on GaN devices on foreign substrates. These results show the promise of the GaN-on-PSS platform for low-cost, robust power devices.

42 ENGINEERING↗

Non-Markovian Hole Excess Noise in Avalanche Amorphous Selenium Thin Films

Enhancing the signal-to-noise ratio in avalanche photodiodes by utilizing impact ionization gain requires materials exhibiting low excess noise factors. Amorphous selenium (a-Se) as a wide bandgap at ~2.1 eV, a solid-state avalanche layer, demonstrates single-carrier hole impact ionization gain and manifests ultralow thermal generation rates. A comprehensive study of the history dependent and non-Markovian nature of hot hole transport in a-Se was modeled using a Monte Carlo (MC) random walk of single hole free flights, interrupted by instantaneous phonon, disorder, hole–dipole, and impact-ionization scattering interactions. The hole excess noise factors were simulated for 0.1–15 μm a-Se thin-films as a function of mean avalanche gain. The hole excess noise factors in a-Se decreases with an increase in electric field, impact ionization gain, and device thickness. The history dependent nature of branching of holes is explained using a Gaussian avalanche threshold distance distribution and the dead space distance, which increases determinism in the stochastic impact ionization process. An ultralow non-Markovian excess noise factor of ~1 was simulated for 100 nm a-Se thin films corresponding to avalanche gains of 1000. Future detector designs can utilize the nonlocal/non-Markovian nature of the hole avalanche in a-Se, to enable a true solid-state photomultiplier with noiseless gain.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Simulation of Alfvénic avalanche onset in NSTX

In some tokamak discharges, a number of Alfvén eigenmodes (AEs) have been observed to cause a large-scale collapse of the high energy particle distribution, a phenomenon referred to as an avalanche. We examine the necessary conditions for an avalanche using the available experimental information from NSTX on the equilibrium and mode properties for two cases, one with a measurable but benign AE activity and one with an AE activity leading up to an avalanche. To produce an avalanche, the modes present in the discharge must possess resonances that can overlap with a modest increase in instability magnitude, providing a path to global particle stochastic motion. In this paper, we find that the modes present in the avalanche-free discharge do not provide such a path even at a very large amplitude. During the discharge which subsequently produces an avalanche, the high energy population is growing and the Alfvén frequency is dropping due to increasing density, and we find that both these changes, producing a small increased drive or an increased resonance width for the Alfvén modes, can lead in this case to uncontrolled mode growth and large-scale beam particle loss.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Toroidal modeling of runaway avalanche in DIII-D discharges

Abstract A toroidal modeling tool is developed to study the runaway electron (RE) avalanche production process in tokamak plasmas, by coupling the Rosenbluth–Putvinski avalanche model (Rosenbluth and Putvinski 1997 Nucl. Fusion 37 1355) with an n = 0 magneto-hydrodynamic (MHD) solver. Initial value numerical simulations are carried out for two DIII-D discharges with different plasma shapes (one near circular, and the other with high elongation). It is found that, assuming the same level of about 1% seed current level, the Rosenbluth–Putvinski model somewhat underestimates the RE plateau current for the circular-shaped plasma, as compared with that measured in DIII-D experiments. For an elongated, higher current plasma, simulations find strong runaway current avalanche production despite the lack of measured plateau RE current in experiments. A possible reason for this discrepancy is a lack of additional RE dissipation physics in the present two-dimensional model. Systematic scans of the plasma boundary shape, at fixed pre-disruption plasma current, find that the plasma elongation helps to reduce the RE avalanche production, confirming recent results obtained with an analytic model (Fülöp et al 2020 J. Plasma Phys. 86 474860101). The effect of the plasma triangularity (either positive or negative), on the other hand, has a minor effect. On the physics side, the avalanche process involves two competing mechanisms associated with the electric field. On the one hand, a stronger electric field produces a higher instantaneous avalanche growth rate. On the other hand, a fast growing RE current quickly reduces the fraction of the conduction current together with the electric field, and hence a faster dissipation of the poloidal flux. As a final result of these two dynamic processes, the runaway plateau current is not always the largest with the strongest initial electric field. These results lay the foundation for future self-consistent inclusion of the MHD dynamics and the RE amplification process.

Physics↗

Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices

Edge termination is the key building block in power devices to enable near-ideal, avalanche breakdown voltage (BV). Here, this work presents the design, fabrication, and physics of a GaN guard ring (GR) edge termination formed by selective-area nitrogen implantation through an epitaxial p-GaN layer. The fabrication of this termination only includes a single implantation step that does not require precise control of implant depth, rendering a large process latitude. The selective-area implantation produces p-GaN rings that are separated by the implanted, semi-insulating regions. The number and spacing of the p-type rings are found to determine the BV of the vertical GaN p-n diode. The 16-ring structure enables a BV of 1800 V, being 88% of the theoretical 1-D parallel-plane limit. Avalanche characteristics are observed in devices with a large variety of GR designs. Finally, we present a comprehensive survey on the efficiency, fabrication complexity, real estate, and avalanche capability of various edge termination techniques that have been reported in vertical GaN devices. The high efficiency (among the highest reported in avalanche-capable GaN terminations), simple and robust fabrication process, and uniform avalanche capability make this implanted GR a promising edge termination for high-voltage GaN devices.

42 ENGINEERING↗

Unraveling the myths and mysteries of photon avalanching nanoparticles

Photon avalanching (PA) nanomaterials exhibit some of the most nonlinear optical phenomena reported for any material, allowing them to push the frontiers of applications ranging from nanoscale imaging and sensing to optical computing. But PA remains shrouded in mystery, with its underlying physics and limitations misunderstood. Photon avalanching is not, in fact, an avalanche of photons, at least not in the same way that snowballs beget more snowballing in an actual avalanche. In this focus article, we dispel these and other common myths surrounding PA in lanthanide-based nanoparticles and unravel the mysteries of this unique nonlinear optical effect. We hope that removing the misconceptions surrounding avalanching nanoparticles will inspire new interest and applications that harness the giant nonlinearity of PA across a broad range of scientific fields.

Skripka, Artiom↗

Using Infrasound to Inform Avalanche Hazard Forecasts

Avalanches are natural hazards that occur when an unstable mass of snow breaks away from a mountain slope. It is expected that climate change will lead to increased avalanche activity, which can cause interruptions to water and power infrastructure, transportation blockages, higher risk for loss of life, and changes to ecosystems. Avalanche forecasts are key to mitigating hazards, and observations of recent avalanches comprise one of the key observations for deciding danger level. It is well understood that infrasound can be used to detect and locate snow avalanches in transitional snowpacks, even during snowstorms, but similar studies are lacking for maritime snowpacks. Here we show results from an infrasound field experiment in Tutl’uh (Turnagain Arm), Alaska, USA between January 31 – April 30 field deployment campaign. We show that (1) methods developed for transitional snowpacks can be applied to maritime snowpacks in Alaska, (2) background noise may be higher in this region due to natural and anthropogenic influences, and (3) low-cost infrasound sensors can withstand the harsh Alaskan winter and successfully collect data. We also discuss the impact of this work and a path forward.

58 GEOSCIENCES↗

Electron avalanche in liquid xenon

Measurements in liquid Xe are reported of the characteristic function that describes the avalanche, the first Townsend coefficient. An electron avalanche occurs when the drifting electrons attain sufficient kinetic energy from the electric field to cause additional ionization. Data on the avalanche were obtained by studying the pulses in a liquid-filled proportional chamber as a function of applied voltage and anode diameter. The results of the investigation show that the avalanche of free electrons in purified liquid Xe is adequately described by the same formalism used for the avalanche of electrons in gases.

Derenzo, S. E.↗

Avalanche in Adhesion at Metal Interfaces

Simulations have shown that as two metal surfaces approach each other, the surface layers can avalanche together when the rigid interfacial spacing falls below a critical distance. This is accompanied by a discontinuous decrease in the adhesive energy. Here we present an examination of this phenomenon for the body centered cubic (BCC) metals Fe and W using the Equivalent Crystal Theory. In order to identify the circumstances under which avalanche might be inhibited, the effect of loss of registry between the two surfaces is investigated in detail. The avalanche is inhibited when the two surfaces are sufficiently far out of registry and when only a few layers near the surface are allowed to relax. As the relaxing slabs get thicker a sharp avalanche reappears. However, as the loss of registry increases the energy released in the avalanche decreases.

Banerjea, Amitava↗

NASA's Potential Contributions to Avalanche Forecasting Using Active and Passive Microwave Measurements

This Candidate Solution is based on using active and passive microwave measurements acquired from NASA satellites to improve USDA (U.S. Department of Agriculture) Forest Service forecasting of avalanche danger. Regional Avalanche Centers prepare avalanche forecasts using ground measurements of snowpack and mountain weather conditions. In this Solution, range of the in situ observations is extended by adding remote sensing measurements of snow depth, snow water equivalent, and snowfall rate acquired by satellite missions that include Aqua, CloudSat, future GPM (Global Precipitation Measurement), and the proposed SCLP (Snow and Cold Land Processes). Measurements of snowpack conditions and time evolution are improved by combining the in situ and satellite observations with a snow model. Recurring snow observations from NASA satellites increase accuracy of avalanche forecasting, which helps the public and the managers of public facilities make better avalanche safety decisions.

Blonski, Slawomir↗

Nano-multiplication region avalanche photodiodes and arrays

An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

Zheng, Xinyu↗