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At least 19 records

Surface-sensitive photon avalanche behavior revealed by single-avalanching-nanoparticle imaging

Avalanching nanoparticles (ANPs) are a new class of lanthanide-based upconverting material demonstrating steep optical nonlinearities with the potential to advance applications ranging from subwavelength bioimaging to neuromorphic computing, nanothermometry, and pressure transduction. Here, we use single-nanocrystal imaging to uncover design-dependent heterogeneity in ANP threshold intensity (I th ). Quantitative comparisons between distributions of I th and ANP shell properties reveal correlations between mean I th values, histogram widths, and nanocrystal shell thickness. Evaluating avalanching behaviors using an established model of shell-dependent surface energy transfer shows that variations in shell thickness-and the resultant energy transfer through the shell to the surface and environment-are likely the primary contributor to ANP-to-ANP I th heterogeneity. Further, nanocrystals with an ~6 nm average shell thickness show I th heterogeneity beyond the extent expected from statistical measurements of shell size and variability using transmission electron microscopy (TEM). Here these results provide a principal guide for the design and application of ANPs to environmental sensing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Avalanche transport of energetic-ions in magnetic confinement plasmas: nonlinear multiple wave-number simulation

Large burst activity, identified as toroidal Alfvén eigenmode (TAE) avalanche, occurs frequently in neutral-beam heated plasmas in National Spherical Torus Experiment (NSTX). Based on the typical experimental observation of TAE avalanche on NSTX, a self-consistent nonlinear multiple wave-number (k ∥ ≃ n/R, where n toroidal mode-number and R major radius) simulation associated with TAE avalanches is performed using the experimental parameters and profiles before the occurrence of TAE avalanche as the M3D-K input. The wave–wave nonlinear coupling among different modes and the resonant interaction between different modes and energetic-ions during TAE avalanches are identified in the nonlinear multiple wave-number simulations. The resonance overlap during the TAE avalanche is clearly observed in the simulation. It is found that the effective wave–wave coupling and a sufficiently strong drive are two important ingredients for the onset of TAE avalanches. TAE avalanche is considered to be a strongly nonlinear process and it is always accompanied by the simultaneous rapid frequency-chirping and large amplitude bursting of multiple modes and significant energetic-ion losses. The experimental phenomenon is observed on NSTX and is qualitatively reproduced by the simulation results in this work. These findings indicate that the onset of avalanche is triggered by nonlinearity of the system, and are also conducive to understanding the underlying mechanism of avalanche transport of energetic particles in the future burning plasmas, such as International Thermonuclear Experiment Reactor.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Giant nonlinear optical responses from photon-avalanching nanoparticles

Avalanche phenomena use steeply nonlinear dynamics to generate disproportionately large responses from small perturbations, and are found in a multitude of events and materials. Photon avalanching enables technologies such as optical phase-conjugate imaging, infrared quantum counting and efficient upconverted lasing. However, the photon-avalanching mechanism underlying these optical applications has been observed only in bulk materials and aggregates, limiting its utility and impact. In this study we report the realization of photon avalanching at room temperature in single nanostructures-small, Tm 3+ -doped upconverting nanocrystals-and demonstrate their use in super-resolution imaging in near-infrared spectral windows of maximal biological transparency. Avalanching nanoparticles (ANPs) can be pumped by continuous-wave lasers, and exhibit all of the defining features of photon avalanching, including clear excitation-power thresholds, exceptionally long rise time at threshold, and a dominant excited-state absorption that is more than 10,000 times larger than ground-state absorption. Beyond the avalanching threshold, ANP emission scales nonlinearly with the 26th power of the pump intensity, owing to induced positive optical feedback in each nanocrystal. This enables the experimental realization of photon-avalanche single-beam super-resolution imaging with sub-70-nanometre spatial resolution, achieved by using only simple scanning confocal microscopy and without any computational analysis. Pairing their steep nonlinearity with existing super-resolution techniques and computational methods, ANPs enable imaging with higher resolution and at excitation intensities about 100 times lower than other probes. The low photon-avalanching threshold and excellent photostability of ANPs also suggest their utility in a diverse array of applications, including sub-wavelength imaging and optical and environmental sensing.

36 MATERIALS SCIENCE↗

Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch

One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al 2 O 3 /Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.

42 ENGINEERING↗

Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate

The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device commercialization. Here, in this work, we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm 2 ) both being the highest reported in GaN devices on foreign substrates. The PSS enables a lower dislocation density than conventional sapphire substrate and is employed in high-voltage GaN devices for the first time. The avalanche voltage in the circuit test reaches 98% of the parallel-plane limit, further affirming that near-ideal avalanche breakdown can be realized on GaN devices on foreign substrates. These results show the promise of the GaN-on-PSS platform for low-cost, robust power devices.

42 ENGINEERING↗

Non-Markovian Hole Excess Noise in Avalanche Amorphous Selenium Thin Films

Enhancing the signal-to-noise ratio in avalanche photodiodes by utilizing impact ionization gain requires materials exhibiting low excess noise factors. Amorphous selenium (a-Se) as a wide bandgap at ~2.1 eV, a solid-state avalanche layer, demonstrates single-carrier hole impact ionization gain and manifests ultralow thermal generation rates. A comprehensive study of the history dependent and non-Markovian nature of hot hole transport in a-Se was modeled using a Monte Carlo (MC) random walk of single hole free flights, interrupted by instantaneous phonon, disorder, hole–dipole, and impact-ionization scattering interactions. The hole excess noise factors were simulated for 0.1–15 μm a-Se thin-films as a function of mean avalanche gain. The hole excess noise factors in a-Se decreases with an increase in electric field, impact ionization gain, and device thickness. The history dependent nature of branching of holes is explained using a Gaussian avalanche threshold distance distribution and the dead space distance, which increases determinism in the stochastic impact ionization process. An ultralow non-Markovian excess noise factor of ~1 was simulated for 100 nm a-Se thin films corresponding to avalanche gains of 1000. Future detector designs can utilize the nonlocal/non-Markovian nature of the hole avalanche in a-Se, to enable a true solid-state photomultiplier with noiseless gain.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Simulation of Alfvénic avalanche onset in NSTX

In some tokamak discharges, a number of Alfvén eigenmodes (AEs) have been observed to cause a large-scale collapse of the high energy particle distribution, a phenomenon referred to as an avalanche. We examine the necessary conditions for an avalanche using the available experimental information from NSTX on the equilibrium and mode properties for two cases, one with a measurable but benign AE activity and one with an AE activity leading up to an avalanche. To produce an avalanche, the modes present in the discharge must possess resonances that can overlap with a modest increase in instability magnitude, providing a path to global particle stochastic motion. In this paper, we find that the modes present in the avalanche-free discharge do not provide such a path even at a very large amplitude. During the discharge which subsequently produces an avalanche, the high energy population is growing and the Alfvén frequency is dropping due to increasing density, and we find that both these changes, producing a small increased drive or an increased resonance width for the Alfvén modes, can lead in this case to uncontrolled mode growth and large-scale beam particle loss.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Toroidal modeling of runaway avalanche in DIII-D discharges

Abstract A toroidal modeling tool is developed to study the runaway electron (RE) avalanche production process in tokamak plasmas, by coupling the Rosenbluth–Putvinski avalanche model (Rosenbluth and Putvinski 1997 Nucl. Fusion 37 1355) with an n = 0 magneto-hydrodynamic (MHD) solver. Initial value numerical simulations are carried out for two DIII-D discharges with different plasma shapes (one near circular, and the other with high elongation). It is found that, assuming the same level of about 1% seed current level, the Rosenbluth–Putvinski model somewhat underestimates the RE plateau current for the circular-shaped plasma, as compared with that measured in DIII-D experiments. For an elongated, higher current plasma, simulations find strong runaway current avalanche production despite the lack of measured plateau RE current in experiments. A possible reason for this discrepancy is a lack of additional RE dissipation physics in the present two-dimensional model. Systematic scans of the plasma boundary shape, at fixed pre-disruption plasma current, find that the plasma elongation helps to reduce the RE avalanche production, confirming recent results obtained with an analytic model (Fülöp et al 2020 J. Plasma Phys. 86 474860101). The effect of the plasma triangularity (either positive or negative), on the other hand, has a minor effect. On the physics side, the avalanche process involves two competing mechanisms associated with the electric field. On the one hand, a stronger electric field produces a higher instantaneous avalanche growth rate. On the other hand, a fast growing RE current quickly reduces the fraction of the conduction current together with the electric field, and hence a faster dissipation of the poloidal flux. As a final result of these two dynamic processes, the runaway plateau current is not always the largest with the strongest initial electric field. These results lay the foundation for future self-consistent inclusion of the MHD dynamics and the RE amplification process.

Physics↗

Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices

Edge termination is the key building block in power devices to enable near-ideal, avalanche breakdown voltage (BV). Here, this work presents the design, fabrication, and physics of a GaN guard ring (GR) edge termination formed by selective-area nitrogen implantation through an epitaxial p-GaN layer. The fabrication of this termination only includes a single implantation step that does not require precise control of implant depth, rendering a large process latitude. The selective-area implantation produces p-GaN rings that are separated by the implanted, semi-insulating regions. The number and spacing of the p-type rings are found to determine the BV of the vertical GaN p-n diode. The 16-ring structure enables a BV of 1800 V, being 88% of the theoretical 1-D parallel-plane limit. Avalanche characteristics are observed in devices with a large variety of GR designs. Finally, we present a comprehensive survey on the efficiency, fabrication complexity, real estate, and avalanche capability of various edge termination techniques that have been reported in vertical GaN devices. The high efficiency (among the highest reported in avalanche-capable GaN terminations), simple and robust fabrication process, and uniform avalanche capability make this implanted GR a promising edge termination for high-voltage GaN devices.

42 ENGINEERING↗

Unraveling the myths and mysteries of photon avalanching nanoparticles

Photon avalanching (PA) nanomaterials exhibit some of the most nonlinear optical phenomena reported for any material, allowing them to push the frontiers of applications ranging from nanoscale imaging and sensing to optical computing. But PA remains shrouded in mystery, with its underlying physics and limitations misunderstood. Photon avalanching is not, in fact, an avalanche of photons, at least not in the same way that snowballs beget more snowballing in an actual avalanche. In this focus article, we dispel these and other common myths surrounding PA in lanthanide-based nanoparticles and unravel the mysteries of this unique nonlinear optical effect. We hope that removing the misconceptions surrounding avalanching nanoparticles will inspire new interest and applications that harness the giant nonlinearity of PA across a broad range of scientific fields.

Skripka, Artiom↗

Using Infrasound to Inform Avalanche Hazard Forecasts

Avalanches are natural hazards that occur when an unstable mass of snow breaks away from a mountain slope. It is expected that climate change will lead to increased avalanche activity, which can cause interruptions to water and power infrastructure, transportation blockages, higher risk for loss of life, and changes to ecosystems. Avalanche forecasts are key to mitigating hazards, and observations of recent avalanches comprise one of the key observations for deciding danger level. It is well understood that infrasound can be used to detect and locate snow avalanches in transitional snowpacks, even during snowstorms, but similar studies are lacking for maritime snowpacks. Here we show results from an infrasound field experiment in Tutl’uh (Turnagain Arm), Alaska, USA between January 31 – April 30 field deployment campaign. We show that (1) methods developed for transitional snowpacks can be applied to maritime snowpacks in Alaska, (2) background noise may be higher in this region due to natural and anthropogenic influences, and (3) low-cost infrasound sensors can withstand the harsh Alaskan winter and successfully collect data. We also discuss the impact of this work and a path forward.

58 GEOSCIENCES↗

A Generalized Approach to Photon Avalanche Upconversion in Luminescent Nanocrystals

Photon avalanching nanoparticles (ANPs) exhibit extremely nonlinear upconverted emission valuable for subdiffraction imaging, nanoscale sensing, and optical computing. Avalanching has been demonstrated with Tm 3+ -, Pr 3+ -, or Nd 3+ -doped nanocrystals, but their emission is limited to a few wavelengths and materials. Here, we utilize Gd 3+ -assisted energy migration to tune the emission wavelengths of Tm 3+ -sensitized ANPs and generate highly nonlinear emission from Eu 3+ , Tb 3+ , Ho 3+ , and Er 3+ ions. The upconversion intensities of these spectrally discrete ANPs scale with nonlinearity factor s = 10-17 under 1064 nm excitation at power densities as low as 7 kW cm -2 . This strategy for imprinting avalanche behavior on remote emitters can be extended to fluorophores adjacent to ANPs, as here we demonstrate with CdS/CdSe/CdS core/shell/shell quantum dots. ANPs with rationally designed energy transfer networks provide the means to transform conventional linear emitters into a highly nonlinear ones, expanding the use of photon avalanching in biological, chemical, and photonic applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

On how avalanches penetrate the SOL and broaden heat loads

Recent experiments reported a correlation between power law core temperature spectra and Dα emission, suggesting that heat avalanches penetrate the SOL. This paper derives a threshold criterion for avalanche penetration using a reduced model. Avalanches with ($\bigtriangledown$$\tilde{T}$) rms > $\bigtriangledown$$\tilde{T}$ crit at the separatrix are predicted to penetrate, and so broaden the SOL and heat load distribution. $\bigtriangledown$$\tilde{T}$ crit is ~ 1/$τ$ ∥ , where $τ$ ∥ is the parallel heat flow time through the SOL. Penetration occurs when avalanches are strong enough to steepen sufficiently to shock at the separatrix. A positive correlation is found between the nonlinear drive for steepening and the penetration depth. In particular, penetration depth exceeds that of the heuristic drift limit when shocks form. Implications for numerical and physical experiments are also discussed.

SOL heat load↗

Relating storm-snow avalanche instabilities to data collected from the Differential Emissivity Imaging Disdrometer (DEID)

Storm-snow avalanches are challenging to forecast due to complex alpine terrain and during rapidly changing weather conditions. They can result in loss of lives and significant economic impact. We describe how a new device that continuously measures with high-frequency snowflake mass, size, density, and type, the Differential Emissivity Imaging Disdrometer (DEID), and show how the DEID can be used to aid avalanche forecasting when coupled with a storm-snow stability model. DEID measurements of snow accumulation, snow water equivalent (SWE), and snow density obtained during seventeen storms taken at the mid-Collins Snow-Study Plot at Alta Ski Area in Utah's Central Wasatch mountain range during winter 2020–2021 show excellent agreement with infrequent manual measurements. Additionally, two new variables, the Shape Density Index (SDI) and Complexity, are proposed and used to classify snowflake habit and estimate storm-snow shear strength. We illustrate how these DEID-derived data can be used to identify layers of concern in the storm snow such as density inversions, in real-time without digging snow pits. Furthermore, the DEID-data are used to run four variations of the SNOw Slope Stability model (SNOSS) for the storms investigated. The results are evaluated with data collected from tilt-board tests, infrasound measurements, and visual observations of avalanches. For a total fourteen storms analyzed, the DEID-driven SNOSS-modeled minimum stability index predicts the general stability of the storm-snow as indicated by observed avalanches, both natural and of unknown cause. Finally, the results provide a promising approach for nowcasting instabilities within storm-snow layers with a single instrument.

54 ENVIRONMENTAL SCIENCES↗

A physics-constrained deep learning surrogate model of the runaway electron avalanche growth rate

A surrogate model of the runaway electron avalanche growth rate in a magnetic fusion plasma is developed. This is accomplished by employing a physics-informed neural network (PINN) to learn the parametric solution of the adjoint to the relativistic Fokker–Planck equation. The resulting PINN is able to evaluate the runaway probability function across a broad range of parameters in the absence of any synthetic or experimental data. This surrogate of the adjoint relativistic Fokker–Planck equation is then used to infer the avalanche growth rate as a function of the electric field, synchrotron radiation and effective charge. Predictions of the avalanche PINN are compared against first principle calculations of the avalanche growth rate with excellent agreement observed across a broad range of parameters.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment

Traditional mesa terminations require precise angle design to reduce the electric field at the edge and surface treatment to reduce etch damage. Otherwise, the device usually suffers a premature breakdown. This work proposes the use of easy-to-implement hydrogen plasma treatment to solve the premature breakdown caused by mesa and demonstrates the avalanche capability in GaN-on-GaN p-i-n diodes. The breakdown electric field when the avalanche occurred was ∼2.3 MV/cm at room temperature for a GaN drift layer with a doping concentration of ∼7 × 1015 cm−3, which is consistent with the theoretical value. The temperature coefficient of the avalanche breakdown voltage of the devices was 4.64–4.85 × 10−4 K−1. This work shows a simple and effective approach to achieve avalanche capability in vertical GaN power devices, which can serve as an important reference for the future development of efficient and robust GaN power electronics.

Fu, Kai (ORCID:0000000294057512)↗

The impact of collisionality on the runaway electron avalanche during a tokamak disruption

The exponential growth (avalanching) of runaway electrons (REs) during a tokamak disruption continues to be a large uncertainty in RE modeling. The present work investigates the impact of tokamak geometry on the efficiency of the avalanche mechanism across a broad range of disruption scenarios. It is found that the parameter ν *,crit ⁠, describing the collisionality at the critical energy to run away, delineates how toroidal geometry impacts RE formation. In particular, utilizing a reduced but self-consistent description of plasma power balance, it is shown that for a high-density deuterium-dominated plasma, ν *,crit is robustly less than one, resulting in a substantial decrease in the efficiency of the RE avalanche compared to predictions from slab geometry. In contrast, for plasmas containing a substantial quantity of neon or argon, ν *,crit ≳1, no reduction of the avalanche is observed due to toroidal geometry. This sharp contrast in the impact of low- vs high-Z material results primarily from the relatively strong radiative cooling from high-Z impurities, enabling the plasma to be radiatively pinned at low temperatures and thus large electric fields, even for modest quantities of high-Z material.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Testing strong-field QED with the avalanche precursor

A two-beam high-power laser facility is essential for the study of one of the most captivating phenomena predicted by strong-field quantum electrodynamics (QED) and yet unobserved experimentally: the avalanche-type cascade. In such a cascade, the energy of intense laser light can be efficiently transformed into high-energy radiation and electron–positron pairs. The future 50-petawatt-scale laser facility NSF OPAL will provide unique opportunities for studying such strong-field QED effects, as it is designed to deliver two ultra-intense, tightly focused laser pulses onto the interaction point. In this work, we investigate the potential of such a facility for studying elementary particle and plasma dynamics deeply in the quantum radiation-dominated (RD) regime, and the generation of QED avalanches. With three-dimensional particle-in-cell simulations, we demonstrate that QED avalanche precursors can be reliably triggered under realistic laser parameters and layout (namely, focusing f/2, tilted optical axes, and non-ideal co-pointing) with the anticipated capabilities of NSF OPAL. We demonstrate that seed electrons can be efficiently injected into the laser focus by using targets of three types: a gas of heavy atoms, an overcritical plasma, and a thin foil. A strong positron and high-energy photon signal is generated in all cases. The cascade properties can be identified from the final particle distributions, which have a clear directional pattern. At increasing laser field intensity, such distributions provide signatures of the transition, first, to the RD interaction regime, and then to a QED avalanche. Our findings can also be used for designing related future experiments.

Lasers↗