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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices

Edge termination is the key building block in power devices to enable near-ideal, avalanche breakdown voltage (BV). Here, this work presents the design, fabrication, and physics of a GaN guard ring (GR) edge termination formed by selective-area nitrogen implantation through an epitaxial p-GaN layer. The fabrication of this termination only includes a single implantation step that does not require precise control of implant depth, rendering a large process latitude. The selective-area implantation produces p-GaN rings that are separated by the implanted, semi-insulating regions. The number and spacing of the p-type rings are found to determine the BV of the vertical GaN p-n diode. The 16-ring structure enables a BV of 1800 V, being 88% of the theoretical 1-D parallel-plane limit. Avalanche characteristics are observed in devices with a large variety of GR designs. Finally, we present a comprehensive survey on the efficiency, fabrication complexity, real estate, and avalanche capability of various edge termination techniques that have been reported in vertical GaN devices. The high efficiency (among the highest reported in avalanche-capable GaN terminations), simple and robust fabrication process, and uniform avalanche capability make this implanted GR a promising edge termination for high-voltage GaN devices.

42 ENGINEERING↗

Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate

The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device commercialization. Here, in this work, we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm 2 ) both being the highest reported in GaN devices on foreign substrates. The PSS enables a lower dislocation density than conventional sapphire substrate and is employed in high-voltage GaN devices for the first time. The avalanche voltage in the circuit test reaches 98% of the parallel-plane limit, further affirming that near-ideal avalanche breakdown can be realized on GaN devices on foreign substrates. These results show the promise of the GaN-on-PSS platform for low-cost, robust power devices.

42 ENGINEERING↗

1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( R ON A ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, R ON A is 0.23 mΩ∙ cm 2 at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm 2 . Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.

42 ENGINEERING↗

Design and testing of an active quenching circuit for an avalanche photodiode photon detector

The photon-detection capabilities of avalanche photodiodes (APDs) operating above their theoretical breakdown voltages are described, with particular attention given to the needs and methods of quenching an avalanche once breakdown has occurred. A brief background on the motives of and previous work with this mode of operation is presented. Finally, a description of the design and testing of an active quenching circuit is given. Although the active quenching circuit did not perform as expected, knowledge was gained as to the signal amplitudes necessary for quenching and the need for a better model for the above-breakdown circuit characteristics of the Geiger-mode APD.

Arbel, D.↗

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

Aslam, Shahid↗

Machine Learning for Mapping Multipactor Susceptibility in RF Systems: Capabilities and Generalization Constraints

Multipactor is a surface-driven electron avalanche phenomenon that degrades the performance and reliability of radio-frequency (RF) systems in particle accelerator and vacuum electronics applications. Multipactor behavior in a given device structure is conventionally assessed through susceptibility charts, which provide a parameter-space characterization of the instability. In this work, we assess the capabilities of machine-learning (ML) models to learn and predict such susceptibility charts and analyze the constraints governing their generalization across materials. Using a simulation-derived dataset spanning six distinct secondary-electron-yield material profiles in a canonical two-surface planar geometry, we train supervised regression models and artificial neural networks to predict the time-averaged electron growth rate, δavg, across the relevant parameter space. Model performance is evaluated using metrics that explicitly probe the structure of susceptibility charts, including Intersection over Union, Structural Similarity Index, and correlation analysis. Tree-based ensemble models outperform neural-network models in reconstructing susceptibility regions and in generalizing across material domains. Principal-component analysis reveals disjoint material feature distributions, indicating that the piecewise mode structure of multipactor susceptibility is difficult to represent with a single global model and that generalization is constrained by data coverage rather than by model complexity. An exhaustive reduced-coverage study further shows that sparse material-space coverage can yield mean performance in the same general range but producing large variability in the susceptibility-region overlap. These results clarify the capabilities of ML-based surrogate models for parameter-space characterization of multipactor discharge. They also provide guidance for their appropriate use in RF system design.

43 PARTICLE ACCELERATORS↗

A non-Markovian model of avalanche gain statistics for a solid-state photomultiplier

A solid-state photomultiplier (SSPM) capable of continously detecting individual photons of wavelength between 0.4 and 28 microns has recently been disclosed (Petroff et al., 1987). The initial response of the SSPM to single photon is a fast, high-amplitude current pulse of between 10,000 and 100,000 electrons. A phenomenological model of the SSPM avalanche process is presented which successfully predicts the shape of the observed pulse-amplitude distribution by including small history-dependent effects on the carrier transport. The model clarifies the consequences of the electric field strength and the scattering of the electrons for the development of the avalanche in the SSPM.

Laviolette, Randall A.↗

Microwave and millimeter-wave power generation in silicon carbide avalanche devices

Numerical simulations were performed to investigate the typical power-generating capabilities of SiC IMPATT diodes. Using available material parameters, SiC double-drift IMPATT diodes were simulated at 10, 35, 60, and 94 GHz, and the operating characteristics of these devices were compared to those of Si and GaAs devices. Compared to the Si and GaAs IMPATT performances in the pulsed mode, the SiC IMPATT performance was found to be far superior. The performance of SiC devices in the CW mode was also superior to that of GaAs devices, especially at lower frequencies. At a high frequency (94 GHz), the performance of the SiC device was found to be comparable to that of Si devices.

Mehdi, I.↗

Tracking capabilities of SPADs for laser ranging

The spatial sensitivity of Single-Photon Avalanche Diodes (SPADs) can be exploited in laser ranging measurements to finely tune the laser spot in the center of the detector sensitive area. We report the performance of a SPAD with l00 micron diameter. It features a time resolution better than 80 ps rms when operated 4V above V(b) at minus 30 C, and a spatial sensitivity better than 20 microns to radial displacements of the laser spot. New SPAD structures with auxiliary delay detectors are proposed. These improved devices could allow a two dimensional sensitivity, that could be employed for the design of pointing servos.

Zappa, F.↗

Magnetic Avalanche Detector using Single-Molecule Magnets

Here we discuss the results of the 9 month add-on project: “Magnetic Avalanche Detector using Single-Molecule Magnets”. The key point of the projects was to design a cryogenic system that is capable of applying magnetic fields high enough to magnetize the Single-Molecule Magnets (SMMs), maintain temperatures below 1K, and be able to detect magnetic avalanches of the SMM domains. We were able to achieve these goals. Our system was able to magnetize and sense the magnetization of SMM crystals. Moreover, we were able to detect avalanche demagnetization events caused by an alpha particle interacting with a magnetized SMM.

47 OTHER INSTRUMENTATION↗

Evaluation of asynchronous geiger-mode avalanche photodiode arrays for deep-space optical communications

The NASA Psyche mission is set to explore an asteroid located between Mars and Jupiter with a launch date in 2022. On-board the Psyche spacecraft is experimental demonstrator technology that will allow scientists to explore the capabilities of optical communications – a program called Deep Space Optical Communication (DSOC) led by Jet Propulsion Laboratory (JPL). DSOC seeks to improve communications performance by developing a space-based Flight Laser Transceiver (FLT) and a ground-based transceiver to enable photon-efficient communications with equipment in deep space. An integral part to this FLT system is a high-efficiency photon-counting camera (PCC) that is able to detect both the 1064nm uplink/beacon laser photons and 1550nm downlink laser photons with low background noise, and is capable of withstanding the rigors of space-travel. The paper details the characterization of several asynchronous Geiger-Mode Avalanche Photodiode (GmAPD) arrays developed by MIT Lincoln Laboratory for use in the PCC- specifically evaluating the temperature dependence of background noise, photon detection efficiency at 1064nm and 1550nm wavelengths, pixel lifetime testing, and angle of acceptance measurements. The results of this characterization are used to determine the nominal conditions for the device to operate in while in flight to maintain an efficient link with the ground-based transceiver.

Duerr, E.↗

HgCdTe Avalanche Photodiode Array Detectors with Single Photon Sensitivity and Integrated Detector Cooler Assemblies for Space Lidar Applications

A HgCdTe avalanche photodiode (APD) focal plane array assembly with linear mode photon-counting capability has been developed for space lidar applications. An integrated detector cooler assembly (IDCA) has been built using a miniature Stirling cooler. A microlens array has been included to improve the fill factor. The HgCdTe APD has a spectral response from 0.9- to 4.3-μm wavelengths, a photon detection efficiency as high as 70%, and a dark count rate of <250 kHz at 110 K. The mass of the IDCA is 0.8 kg and the total electrical power consumption is about 7 W. The HgCdTe APD arrays have been characterized at NASA Goddard Space Flight Center. A series of environmental tests have been conducted for the IDCAs, including vibration, thermal cycling, and thermal vacuum tests. A description of the device and the test results at NASA are given in this paper.

Sun, Xiaoli↗

Rate-induced aging effects on Parallel-Plate Avalanche Counter (PPAC) caused by heavy ion beams

The Facility for Rare Isotope Beams (FRIB) is one of the premier scientific user facilities for nuclear science with radioactive beams, capable of producing most (approximately 80%) of the isotopes expected to exist, from oxygen to uranium, at energies up to 200 MeV/u. With the increase in beam power from the present 10 kW to the planned 400 kW, FRIB experiments are about to enter a new era. An unprecedented rate capability as well as stable performance of all the planned instrumentation intended for beam diagnostics and beam tuning is required at the expected high beam intensities (> 1 MHz). A summary of aging phenomena at high heavy-ion beam rates observed in the Advanced Rare Isotope Separator (ARIS) detectors for beam diagnostics, including Parallel Plate Avalanche Counters (PPAC) and plastic scintillation for time-of-flight measurements, is discussed. Current research and development project to mitigate rate-induced aging are presented.

Aging effects↗

Studies of Avalanche Photodiodes (APDS) as Readout Devices for Scintillating Fibers for High Energy Gamma-Ray Astronomy Telescopes

New gamma ray and charged particle telescope designs based on scintillating fiber arrays could provide low cost, high resolution, lightweight, very large area and multi radiation length instrumentation for planned NASA space exploration. The scintillating fibers low visible light output requires readout sensors with single photon detection sensitivity and low noise. The sensitivity of silicon Avalanche Photodiodes (APDS) matches well the spectral output of the scintillating fibers. Moreover, APDs have demonstrated single photon capability. The global aim of our work is to make available to NASA a novel optical detector concept to be used as scintillating fiber readouts and meeting the requirements of the new generations of space-borne gamma ray telescopes. We proposed to evaluate the feasibility of using RMD's small area APDs ((mu)APD) as scintillating fiber readouts and to study possible alternative (mu)APD array configurations for space borne readout scintillating fiber systems, requiring several hundred thousand to one million channels. The evaluation has been conducted in accordance with the task description and technical specifications detailed in the NASA solicitation "Studies of Avalanche Photodiodes (APD as readout devices for scintillating fibers for High Energy Gamma-Ray Astronomy Telescopes" (#8-W-7-ES-13672NAIS) posted on October 23, 1997. The feasibility study we propose builds on recent developments of silicon APD arrays and light concentrators advances at RMD, Inc. and on more than 5 years of expertise in scintillating fiber detectors. In a previous program we carried out the initial research to develop a high resolution, small pixel, solid-state, silicon APD array which exhibited very high sensitivity in the UV-VIS spectrum. This (mu)APD array is operated in Geiger mode and results in high gain (greater than 10(exp 8)), extremely low noise, single photon detection capability, low quiescent power (less than 10 (mu)W/pixel for 30 micrometers sensitive area diameter) and output in the 1-5 volt range. If successful, this feasibility study will make possible the development of a scintillating fiber detector with unsurpassed sensitivity, extremely low power usage, a crucial factor of merit for space based sensors and telescopes.

Vasile, Stefan↗

Evaluation of a satellite laser ranging technique using pseudonoise code modulated laser diodes

Several types of Satellite Laser Ranging systems exist, operating with pulsed, high-energy lasers. The distance between a ground point and an orbiting satellite can be determined to within a few centimeters. A new technique substitutes pseudonoise code modulated laser diodes, which are much more compact, reliable and less costly, for the lasers now used. Since laser diode technology is only now achieving sufficiently powerful lasers, the capabilities of the new technique are investigated. Also examined are the effects of using an avalanche photodiode detector instead of a photomultiplier tube. The influence of noise terms (including background radiation, detector dark and thermal noise and speckle) that limit the system range and performance is evaluated.

Ball, Carolyn Kay↗

Miniaturization in x ray and gamma ray spectroscopy

The paper presents advances in two new sensor technologies and a miniaturized associated electronics technology which, when combined, can allow for very significant miniaturization and for the reduction of weight and power consumption in x-ray and gamma-ray spectroscopy systems: (1) Mercuric iodide (HgI2) x-ray technology, which allows for the first time the construction of truly portable, high-energy resolution, non-cryogenic x-ray fluorescence (XRF) elemental analyzer systems, with parameters approaching those of laboratory quality cryogenic instruments; (2) the silicon avalanche photodiode (APD), which is a solid-state light sensitive device with internal amplification, capable of uniquely replacing the vacuum photomultiplier tube in scintillation gamma-ray spectrometer applications, and offering substantial improvements in size, ruggedness, low power operation and energy resolution; and (3) miniaturized (hybridized) low noise, low power amplification and processing electronics, which take full advantage of the favorable properties of these new sensors and allow for the design and fabrication of advanced, highly miniaturized x-ray and gamma-ray spectroscopy systems. The paper also presents experimental results and examples of spectrometric systems currently under construction. The directions for future developments are discussed.

Iwanczyk, Jan S.↗

The new MTLRS-1 receiving system

In this report, we are giving a detailed description of the new receiving system of the German Modular Transportable Laser Ranging System MTLRS-1, consisting of a spectral time and field of view filter and a Single Photon Avalanche Diode (SPAD) as a single photon detector. The system gives full day and night ranging capability to all satellites with cm accuracy.

Sperber, Peter↗

Testing strong-field QED with the avalanche precursor

A two-beam high-power laser facility is essential for the study of one of the most captivating phenomena predicted by strong-field quantum electrodynamics (QED) and yet unobserved experimentally: the avalanche-type cascade. In such a cascade, the energy of intense laser light can be efficiently transformed into high-energy radiation and electron–positron pairs. The future 50-petawatt-scale laser facility NSF OPAL will provide unique opportunities for studying such strong-field QED effects, as it is designed to deliver two ultra-intense, tightly focused laser pulses onto the interaction point. In this work, we investigate the potential of such a facility for studying elementary particle and plasma dynamics deeply in the quantum radiation-dominated (RD) regime, and the generation of QED avalanches. With three-dimensional particle-in-cell simulations, we demonstrate that QED avalanche precursors can be reliably triggered under realistic laser parameters and layout (namely, focusing f/2, tilted optical axes, and non-ideal co-pointing) with the anticipated capabilities of NSF OPAL. We demonstrate that seed electrons can be efficiently injected into the laser focus by using targets of three types: a gas of heavy atoms, an overcritical plasma, and a thin foil. A strong positron and high-energy photon signal is generated in all cases. The cascade properties can be identified from the final particle distributions, which have a clear directional pattern. At increasing laser field intensity, such distributions provide signatures of the transition, first, to the RD interaction regime, and then to a QED avalanche. Our findings can also be used for designing related future experiments.

Lasers↗