Development of solid-state avalanche amorphous selenium for medical imaging: Solid-state avalanche amorphous selenium sensor
Not Available
Scheuermann, James R.↗
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Theory of suppressing avalanche process of carrier in short pulse laser irradiated dielectrics
A theory for controlling avalanche process of carrier during short pulse laser irradiation is proposed. We show that avalanche process of conduction band electrons (CBEs) is determined by the occupation number of phonons in dielectrics. The theory provides a way to suppress avalanche process and a direct judgment for the contribution of avalanche process and photon ionization process to the generation of CBEs. The obtained temperature dependent rate equation shows that the laser induced damage threshold of dielectrics, e.g., fused silica, increase nonlinearly with the decreases of temperature. Present theory predicts a new approach to improve the laser induced damage threshold of dielectrics.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Dynamics of the Bingham Canyon rock avalanches (Utah, USA) resolved from topographic, seismic, and infrasound data: Bingham Canyon Rock Avalanches
The 2013 Bingham Canyon Mine rock avalanches represent one of the largest cumulative landslide events in recorded U.S. history and provide a unique opportunity to test remote analysis techniques for landslide characterization. We combine aerial photogrammetry surveying, topographic reconstruction, numerical runout modeling, and analysis of broadband seismic and infrasound data to extract salient details of the dynamics and evolution of the multiphase landslide event. Our results reveal a cumulative intact rock source volume of 52 Mm 3 , which mobilized in two main rock avalanche phases separated by 1.5 h. We estimate that the first rock avalanche had 1.5–2 times greater volume than the second. Each failure initiated by sliding along a gently dipping (21°), highly persistent basal fault before transitioning to a rock avalanche and spilling into the inner pit. The trajectory and duration of the two rock avalanches were reconstructed using runout modeling and independent force history inversion of intermediate-period (10–50 s) seismic data. Intermediate- and shorter-period (1–50 s) seismic data were sensitive to intervals of mass redirection and constrained finer details of the individual slide dynamics. Back projecting short-period (0.2–1 s) seismic energy, we located the two rock avalanches within 2 and 4 km of the mine. Further analysis of infrasound and seismic data revealed that the cumulative event included an additional 11 smaller landslides (volumes ~10 4 –10 5 m 3 ) and that a trailing signal following the second rock avalanche may result from an air-coupled Rayleigh wave. These results demonstrate new and refined techniques for detailed remote characterization of the dynamics and evolution of large landslides.
58 GEOSCIENCES↗
Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode
We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Surface-sensitive photon avalanche behavior revealed by single-avalanching-nanoparticle imaging
Avalanching nanoparticles (ANPs) are a new class of lanthanide-based upconverting material demonstrating steep optical nonlinearities with the potential to advance applications ranging from subwavelength bioimaging to neuromorphic computing, nanothermometry, and pressure transduction. Here, we use single-nanocrystal imaging to uncover design-dependent heterogeneity in ANP threshold intensity (I th ). Quantitative comparisons between distributions of I th and ANP shell properties reveal correlations between mean I th values, histogram widths, and nanocrystal shell thickness. Evaluating avalanching behaviors using an established model of shell-dependent surface energy transfer shows that variations in shell thickness-and the resultant energy transfer through the shell to the surface and environment-are likely the primary contributor to ANP-to-ANP I th heterogeneity. Further, nanocrystals with an ~6 nm average shell thickness show I th heterogeneity beyond the extent expected from statistical measurements of shell size and variability using transmission electron microscopy (TEM). Here these results provide a principal guide for the design and application of ANPs to environmental sensing.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Simulations of electron avalanches in an ultra-low-background proportional counter
Not Available
Robinson, John W.↗
Nanomechanics of slip avalanches in amorphous plasticity
Not Available
Cao, Penghui (ORCID:0000000198665075)↗
Ultra-Low Power Light Emission via Avalanche and Sub-avalanche Breakdown in Suspended Carbon Nanotubes
Not provided.
Materials Science↗
Avalanche transport of energetic-ions in magnetic confinement plasmas: nonlinear multiple wave-number simulation
Large burst activity, identified as toroidal Alfvén eigenmode (TAE) avalanche, occurs frequently in neutral-beam heated plasmas in National Spherical Torus Experiment (NSTX). Based on the typical experimental observation of TAE avalanche on NSTX, a self-consistent nonlinear multiple wave-number (k ∥ ≃ n/R, where n toroidal mode-number and R major radius) simulation associated with TAE avalanches is performed using the experimental parameters and profiles before the occurrence of TAE avalanche as the M3D-K input. The wave–wave nonlinear coupling among different modes and the resonant interaction between different modes and energetic-ions during TAE avalanches are identified in the nonlinear multiple wave-number simulations. The resonance overlap during the TAE avalanche is clearly observed in the simulation. It is found that the effective wave–wave coupling and a sufficiently strong drive are two important ingredients for the onset of TAE avalanches. TAE avalanche is considered to be a strongly nonlinear process and it is always accompanied by the simultaneous rapid frequency-chirping and large amplitude bursting of multiple modes and significant energetic-ion losses. The experimental phenomenon is observed on NSTX and is qualitatively reproduced by the simulation results in this work. These findings indicate that the onset of avalanche is triggered by nonlinearity of the system, and are also conducive to understanding the underlying mechanism of avalanche transport of energetic particles in the future burning plasmas, such as International Thermonuclear Experiment Reactor.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Giant nonlinear optical responses from photon-avalanching nanoparticles
Avalanche phenomena use steeply nonlinear dynamics to generate disproportionately large responses from small perturbations, and are found in a multitude of events and materials. Photon avalanching enables technologies such as optical phase-conjugate imaging, infrared quantum counting and efficient upconverted lasing. However, the photon-avalanching mechanism underlying these optical applications has been observed only in bulk materials and aggregates, limiting its utility and impact. In this study we report the realization of photon avalanching at room temperature in single nanostructures-small, Tm 3+ -doped upconverting nanocrystals-and demonstrate their use in super-resolution imaging in near-infrared spectral windows of maximal biological transparency. Avalanching nanoparticles (ANPs) can be pumped by continuous-wave lasers, and exhibit all of the defining features of photon avalanching, including clear excitation-power thresholds, exceptionally long rise time at threshold, and a dominant excited-state absorption that is more than 10,000 times larger than ground-state absorption. Beyond the avalanching threshold, ANP emission scales nonlinearly with the 26th power of the pump intensity, owing to induced positive optical feedback in each nanocrystal. This enables the experimental realization of photon-avalanche single-beam super-resolution imaging with sub-70-nanometre spatial resolution, achieved by using only simple scanning confocal microscopy and without any computational analysis. Pairing their steep nonlinearity with existing super-resolution techniques and computational methods, ANPs enable imaging with higher resolution and at excitation intensities about 100 times lower than other probes. The low photon-avalanching threshold and excellent photostability of ANPs also suggest their utility in a diverse array of applications, including sub-wavelength imaging and optical and environmental sensing.
36 MATERIALS SCIENCE↗
Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch
One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al 2 O 3 /Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.
42 ENGINEERING↗
WE-E-18A-01: Large Area Avalanche Amorphous Selenium Sensors for Low Dose X-Ray Imaging
Purpose: A large area indirect flat panel imager (FPI) with avalanche gain is being developed to achieve x-ray quantum noise limited low dose imaging. It uses a thin optical sensing layer of amorphous selenium (a-Se), known as High-Gain Avalanche Rushing Photoconductor (HARP), to detect optical photons generated from a high resolution x-ray scintillator. We will report initial results in the fabrication of a solid-state HARP structure suitable for a large area FPI. Our objective is to establish the blocking layer structures and defect suppression mechanisms that provide stable and uniform avalanche gain. Methods: Samples were fabricated as follows: (1) ITO signal electrode. (2) Electron blocking layer. (3) A 15 micron layer of intrinsic a-Se. (4) Transparent hole blocking layer. (5) Multiple semitransparent bias electrodes to investigate avalanche gain uniformity over a large area. The sample was exposed to 50ps optical excitation pulses through the bias electrode. Transient time of flight (TOF) and integrated charge was measured. A charge transport simulation was developed to investigate the effects of varying blocking layer charge carrier mobility on defect suppression, avalanche gain and temporal performance. Results: Avalanche gain of ∼200 was achieved experimentally with our multi-layer HARP samples. Simulations using the experimental sensor structure produced the same magnitude of gain as a function of electric field. The simulation predicted that the high dark current at a point defect can be reduced by two orders of magnitude by blocking layer optimization which can prevent irreversible damage while normal operation remained unaffected. Conclusion: We presented the first solid state HARP structure directly scalable to a large area FPI. We have shown reproducible and uniform avalanche gain of 200. By reducing mobility of the blocking layers we can suppress defects and maintain stable avalanche. Future work will optimize the blocking layers to prevent lag and ghosting.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Effect of the link lifetime in a dynamical lattice on the properties of the avalanche processes on it
The properties of the avalanche processes that develop on a dynamical lattice, the structure of links in which changes due to a specific characteristic of each lattice node, namely, its “activity,” which determines the probability of connection of a certain node with neighboring nodes in one step of lattice evolution. The statistics of the sizes of the avalanches appearing in the lattice system is studied as a function of the node activity and the link lifetime (the lifetime of the links formed in the system). It is analytically and numerically shows that the type of avalanche dynamics in the system changes as a function of these parameters. The following three regimes can take place in the system: (1) avalanches of any sizes, from small to catastrophic, can appear, which is reflected in the power-law behavior of the probability density function of the appearance of avalanches of certain sizes; (2) avalanches of a certain average size mainly appear in the system, and the probability density is close to that of a normal distribution; and (3) transient regime, where the probability density function of the appearance of avalanches of certain sizes is close to an exponential function. These results open up the possibilities of controlling the behavior of a complex system; in particular, they can be used to prevent catastrophic avalanches by changing the link lifetime and the average node activity.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate
The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device commercialization. Here, in this work, we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm 2 ) both being the highest reported in GaN devices on foreign substrates. The PSS enables a lower dislocation density than conventional sapphire substrate and is employed in high-voltage GaN devices for the first time. The avalanche voltage in the circuit test reaches 98% of the parallel-plane limit, further affirming that near-ideal avalanche breakdown can be realized on GaN devices on foreign substrates. These results show the promise of the GaN-on-PSS platform for low-cost, robust power devices.
42 ENGINEERING↗
Toward Scintillator High‐Gain Avalanche Rushing Photoconductor Active Matrix Flat Panel Imager ( SHARP ‐ AMFPI ): Initial fabrication and characterization
Purpose We present the first prototype Scintillator High‐Gain Avalanche Rushing Photoconductor Active Matrix Flat Panel Imager ( SHARP ‐ AMFPI ). This detector includes a layer of avalanche amorphous Selenium (a‐Se) ( HARP ) as the photoconductor in an indirect detector to amplify the signal and reduce the effects of electronic noise to obtain quantum noise‐limited images for low‐dose applications. It is the first time avalanche a‐Se has been used in a solid‐state imaging device and poses as a possible solution to eliminate the effects of electronic noise, which is crucial for low‐dose imaging performance of AMFPI . Methods We successfully deposited a solid‐state HARP structure onto a 24 × 30 cm 2 array of thin‐film transistors ( TFT array) with a pixel pitch of 85 μm. The HARP layer consists of 16 μm of a‐Se with a hole‐blocking and electron‐blocking layer to prevent charge injection from the high‐voltage bias and pixel electrodes, respectively. An electric field ( E S e ) up to 105 V μm −1 was applied across the a‐Se layer without breakdown. A 150 μm thick‐structured CsI:Tl scintillator was used to form SHARP ‐ AMFPI . The x‐ray imaging performance is characterized using a 30 kV p Mo/Mo beam. We evaluate the spatial resolution, noise power, and detective quantum efficiency at zero frequency of the system with and without avalanche gain. The results are analyzed using cascaded linear system model ( CLSM ). Results An avalanche gain of 76 ± 5 was measured at E S e = 105 V μm −1 . We demonstrate that avalanche gain can amplify the signal to overcome electronic noise. As avalanche gain is increased, image quality improves for a constant (0.76 mR ) exposure until electronic noise is overcome. Our system is currently limited by poor optical transparency of our high‐voltage electrode and long integrating time which results in dark current noise. These two effects cause high‐spatial frequency noise to dominate imaging performance. Conclusions We demonstrate the feasibility of a solid‐state HARP x‐ray imager and have fabricated the largest active area HARP sensor to date. Procedures to reduce secondary quantum and dark noise are outlined. Future work will improve optical coupling and charge transport which will allow for frequency DQE and temporal metrics to be obtained.
Scheuermann, James R.↗
Disordered artificial spin ices: Avalanches and criticality (invited)
We show that square and kagome artificial spin ices with disconnected islands exhibit disorder-induced nonequilibrium phase transitions. The critical point of the transition is characterized by a diverging length scale and the effective spin reconfiguration avalanche sizes are power-law distributed. For weak disorder, the magnetization reversal is dominated by system-spanning avalanche events characteristic of a supercritical regime, while at strong disorder, the avalanche distributions have subcritical behavior and are cut off above a length scale that decreases with increasing disorder. The different type of geometrical frustration in the two lattices produces distinct forms of critical avalanche behavior. Avalanches in the square ice consist of the propagation of locally stable domain walls separating the two polarized ground states, and we find a scaling collapse consistent with an interface depinning mechanism. In the fully frustrated kagome ice, however, the avalanches branch strongly in a manner reminiscent of directed percolation. We also observe an interesting crossover in the power-law scaling of the kagome ice avalanches at low disorder. Our results show that artificial spin ices are ideal systems in which to study a variety of nonequilibrium critical point phenomena as the microscopic degrees of freedom can be accessed directly in experiments.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Stellar Winds and Dust Avalanches in the AU Mic Debris Disk
We explain the fast-moving, ripple-like features in the edge-on debris disk orbiting the young M dwarf AU Mic. The bright features are clouds of submicron dust repelled by the host star’s wind. The clouds are produced by avalanches: radial outflows of dust that gain exponentially more mass as they shatter background disk particles in collisional chain reactions. The avalanches are triggered from a region a few au across—the “avalanche zone”—located on AU Mic’s primary “birth” ring at a true distance of ∼35 au from the star but at a projected distance more than a factor of 10 smaller: the avalanche zone sits directly along the line of sight to the star, on the side of the ring nearest Earth, launching clouds that disk rotation sends wholly to the southeast, as observed. The avalanche zone marks where the primary ring intersects a secondary ring of debris left by the catastrophic disruption of a progenitor up to Varuna in size, less than tens of thousands of years ago. Only where the rings intersect are particle collisions sufficiently violent to spawn the submicron dust needed to seed the avalanches. We show that this picture works quantitatively, reproducing the masses, sizes, and velocities of the observed escaping clouds. The Lorentz force exerted by the wind’s magnetic field, whose polarity reverses periodically according to the stellar magnetic cycle, promises to explain the observed vertical undulations. The timescale between avalanches, about 10 yr, might be set by time variability of the wind mass loss rate or, more speculatively, by some self-regulating limit cycle.
79 ASTRONOMY AND ASTROPHYSICS↗
Non-Markovian Hole Excess Noise in Avalanche Amorphous Selenium Thin Films
Enhancing the signal-to-noise ratio in avalanche photodiodes by utilizing impact ionization gain requires materials exhibiting low excess noise factors. Amorphous selenium (a-Se) as a wide bandgap at ~2.1 eV, a solid-state avalanche layer, demonstrates single-carrier hole impact ionization gain and manifests ultralow thermal generation rates. A comprehensive study of the history dependent and non-Markovian nature of hot hole transport in a-Se was modeled using a Monte Carlo (MC) random walk of single hole free flights, interrupted by instantaneous phonon, disorder, hole–dipole, and impact-ionization scattering interactions. The hole excess noise factors were simulated for 0.1–15 μm a-Se thin-films as a function of mean avalanche gain. The hole excess noise factors in a-Se decreases with an increase in electric field, impact ionization gain, and device thickness. The history dependent nature of branching of holes is explained using a Gaussian avalanche threshold distance distribution and the dead space distance, which increases determinism in the stochastic impact ionization process. An ultralow non-Markovian excess noise factor of ~1 was simulated for 100 nm a-Se thin films corresponding to avalanche gains of 1000. Future detector designs can utilize the nonlocal/non-Markovian nature of the hole avalanche in a-Se, to enable a true solid-state photomultiplier with noiseless gain.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗