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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Elucidating the Interfacial Barriers in Lanthanide Back-Extraction: From Water to Oil and Back Again

Recovery of critical rare earth elements from complex mixtures has long been realized via solvent extraction, where ions in an aqueous phase are separated into an organic phase using amphiphilic ligands. While a great deal of effort has been placed on understanding this forward reaction, substantial knowledge gaps in the back-extraction process remain. This includes the mechanism of interfacial dissociation and transport back into a highly acidic aqueous phase for further processing. In this work, we connect back-extraction kinetics made in realistic solvent extraction systems to salient interfacial chemistry and structure that represent bottlenecks in the back-extraction of lanthanide ions. We show that the interface between the two liquid phases varies dramatically based on the composition of both phases. Water stretching signals are shown to report on the population of lingering interfacial complexes and are thus used as a reporter of competitive adsorption from excess free ligands in solution for limited interfacial vacancies. We show that excess free ligands, often used to improve forward extractions, set up interfacial blockades inhibiting back-extraction both kinetically and thermodynamically. In conclusion, this insight opens up avenues to tune interfacial properties to facilitate a more dynamic, exchangeable interface to speed up back-extractions while using less energy intensive chemical swings.

Interfaces↗

Dynamic Model of Back-to-Back Converter for System Level Phasor Simulation

The power system is expected to evolve rapidly with increasing deployment of power electronic interface and conditioning systems, microgrids, and hybrid AC/DC grids. Among power electronic systems, back-to-back (BTB) converters can be a powerful interface to integrate microgrids and networked microgrids. However, in system level dynamic simulations for synchronous machine dominated system with BTB converters, a detailed electromagnetic sinusoidal models is not warranted as these simulations are focused on electromechanical transients. This paper focus on developing a simple phasor model for back- to-back converters that can be easily integrated into powerflow solvers to facilitate large-scale power system simulations. The model is implemented using C++ language and integrated into GridLAB-D software as a potential new capability. The GridLAB-D phasor domain model is validated against the electromagnetic transient (EMT) simulation of the detailed switching model. Simulation results show that the phasor model successfully captures the dominant dynamics of the converters.

Mahmood, Hisham↗

Sizing and Location Selection of Medium‐Voltage Back‐to‐Back Converters for DER‐Dominated Distribution Systems

Medium‐voltage back‐to‐back (MVB2B) converters can connect two distribution systems and quantifiably transfer power between them. This function can enable the MVB2B converter to exchange distributed energy resource (DER)‐generated power between two systems and bring significant value to enhancing distribution system DER adoption. Our previous work analysed and demonstrated the value MVB2B converter can bring to DER integration. As continuous work, this paper presents a methodology that helps address the MVB2B converter sizing and location selection problem in distribution systems with high DER penetrations. The proposed methodology aims to address three critical problems for MVB2B converter implementation in the real world: (1) which distribution systems are better to be connected, (2) what converter size is appropriate for connecting the distribution systems, and (3) where the optimal connection points are in the systems for connecting the MVB2B converter. The proposed methodology has been demonstrated by case studies that include various scenarios involving distribution systems with different dominated load types and high photovoltaic penetrations. The results demonstrate that selecting the optimal converter size based on net revenue and time of return considerations leads to a balance between maximizing energy savings and minimizing financial payback periods. Furthermore, feeder pair selection based on load profile standard deviation effectively identifies systems that derive the greatest value from MVB2B integration. Finally, an optimized connection point selection approach using a voltage load sensitivity matrix ensures minimal system impact while facilitating efficient power exchange. These findings provide practical insights for the real‐world deployment of MVB2B converters to enhance DER hosting capacity and improve grid resilience.

14 SOLAR ENERGY↗

Describing Function Analysis of Transformer Magnetizing Inductance for Direct Power Control of Back-to-Back Modular Multilevel Converters with Advanced Grid Support

This paper provides a detailed investigation into the application of describing function-based analysis for assessing transformer magnetizing inductance and its impact on system performance. The focus is on a back-to-back modular multilevel converter architecture, designed to interconnect systems operating at different frequencies. The study explores the implementation of a Direct Power Control strategy, examining its effects on transformer magnetizing inductance saturation and offering effective mitigation techniques. Furthermore, the integration of advanced grid support functionalities is highlighted, demonstrating how these enhancements bolster the converter's ability to improve grid stability and power quality, positioning it as a robust solution for modern power systems. The proposed approach is validated through extensive computer simulations based MAT LAB/Simulink domain, supported by significant case study results, confirming its practical effectiveness.

back-to-back modular multilevel converters (B2B- M↗

Analysis of Transformer Magnetizing Reactance Using Describing Function in Direct Power Control of Back-to-Back Modular Multilevel Converter with Advanced Grid Support

This paper presents a Port Controlled Hamiltonian based direct power control architecture for a back-to-back modular multilevel converter system connecting two ac sources at different frequencies. The system features advanced grid support functionalities based on IEEE 1547-2018, implemented on the inverter side. The rectifier side controller ensures reference following for active and/or reactive powers and maintains the commanded dc bus voltage. The inverter side controller ensures power command following for active and reactive powers.The proposed control architecture is designed to suppress second harmonic oscillations in powers during unbalanced grid voltage sags by dynamically adjusting the currents on each ac side. This also ensures effective elimination of any second harmonic oscillations in the equivalent dc bus voltage. Validation is performed on an OPAL-RT real-time platform with case studies on unbalanced and balanced sags, demonstrating the controller's effectiveness during real time implementation. A reduced-scale laboratory prototype further verifies these case studies, with experimental results for balanced sags due to grid simulator limitations. The results confirm the robustness and efficiency of the proposed control strategy in ensuring stable and reliable operation under various grid conditions.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Back-to-back dijet production in DIS at arbitrary Bjorken x: TMD gluon distributions to twist-3 accuracy

We derive the gluon transverse-momentum-dependent (TMD) operator structure of back-to-back\\\\r\\\\nquark–antiquark dijet production in deep inelastic scattering at arbitrary Bjorken-x to twist-3 ac\\\\r\\\\ncuracy. Working at leading order in the strong coupling and in the kinematic regime where the\\\\r\\\\ntransverse momentum imbalance of the jets is much smaller than their individual transverse mo\\\\r\\\\nmenta, we perform a systematic gradient expansion of the quark propagator in a background gluon\\\\r\\\\nfield. This expansion organizes multiple interactions with the target in terms of longitudinal Wilson\\\\r\\\\nlines and gauge-invariant field-strength insertions, yielding a TMD description valid beyond the\\\\r\\\\nstrict high-energy eikonal (x → 0) approximation. We obtain explicit cross sections for longitudi\\\\r\\\\nnally and transversely polarized virtual photons, identifying all contributing gluon TMD operators\\\\r\\\\nup to twist-3, including structures involving F+−, Fij, and three-gluon correlators. The full lon\\\\r\\\\ngitudinal phase eixP+z− associated with Bjorken-x is retained throughout. In the small-x limit,\\\\r\\\\nour results reproduce the known sub-eikonal expressions obtained in the Color Glass Condensate\\\\r\\\\nframework, establishing a direct connection between the general-x TMD expansion and high-energy\\\\r\\\\nfactorization. We further reduce the operator basis using equations of motion, minimizing the num\\\\r\\\\nber of independent nonperturbative matrix elements entering the cross section. This work provides\\\\r\\\\na systematic foundation for extending TMD analyses of dijet production beyond leading twist, es\\\\r\\\\ntablishing a unified operator framework valid at arbitrary Bjorken-x that smoothly interpolates\\\\r\\\\nbetween moderate- and small-x descriptions of gluon TMDs.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Selective solid-state isolation of NMR circuit elements using back-to-back field effect transistors

Nuclear Magnetic Resonance (NMR) electronics that employ selective solid-state isolation of circuit elements can include solid-state switches, such as back-to-back Field Effect Transistor (FET) pairs, and isolated gate drive electronics adapted to operate the solid-state switches in order to selectively decouple induction coils from receive electronics. The solid-state switches can be placed in series to achieve higher standoff voltages, and can be configured for low on resistance and short switching times. The gate drive electronics can include electrical isolation components adapted to enhance standoff voltages and reduce electrical noise at the selectively isolated receive electronics.

Walsh, David O.↗

Large radiation back-flux from Monte Carlo simulations of fusion neutron–material interactions

Abstract Fusion power reactors will generate intense neutron fluxes into plasma-facing and structural materials (SMs). Radiation back-fluxes, generated from neutron–material interactions under these fluxes, can dramatically impact the plasma dynamics, e.g. by seeding runaway electrons during disruptions via Compton scattering of background electrons by wall-emitted gamma radiation. Here, we quantify these back-fluxes, including neutrons, gamma rays, and electrons, using Monte Carlo calculations for a range of SM candidates and first wall (FW) thicknesses. The radiation back-flux magnitudes are remarkably large, with neutron and gamma radiation back-fluxes on the same order of magnitude as the incident fusion neutron flux. Electron back-fluxes are two orders of magnitudes lower, but are emitted at sufficiently high energies to impact the sheath and boundary plasma dynamics. Material configuration plays a key role in determining back-flux magnitudes. The SM chiefly determines the neutron back-flux magnitude, while the FW thickness principally attenuates the gamma ray and electron back-fluxes. In addition to prompt back-fluxes, which are emitted immediately after fusion neutrons impact the surface, significant delayed gamma ray and electron back-fluxes arise from nuclear decay processes in the activated materials. These delayed back-flux magnitudes range from 2% to 7% of the prompt back-fluxes, and remain present during transients when fusion no longer occurs. During disruptions, build-up of delayed gamma radiation back-flux represents potential runaway electron seeding mechanisms, posing additional challenges for disruption mitigation in a power reactor compared with non-nuclear plasma operations. This work highlights the impact of these radiation back-fluxes plasma performance and demonstrates the importance of considering back-flux generation in materials selection for fusion power reactors.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Impacts of Non-Ideal Back Contact on Capacitance Measurements in CdTe Solar Cells

CdTe solar cells suffer from a non-ideal back contact which can strongly affect the equivalent circuit model and complicate capacitance measurements. Here, five different back contact materials are deposited on identical CdTe absorbers and their influence on capacitance measurements is characterized. A five-element equivalent circuit model is shown to represent a CdTe solar cell with a non-ideal back contact, and capacitance-frequency (C-f) measurements on each sample clearly show the influence of this contact. Capacitance-voltage (C-V) measurements on each sample show the influence of frequency on measured capacitance. In the AlGaOx/Au sample, temperature dependent C-fs show the back barrier height to be 240 meV, and ongoing measurements will give a comparison of back barrier heights for all samples. This study provides insight into the efficacy of various back contacts and highlights potential errors in the interpretation of capacitance measurements due to the presence of the back contact.

cadmium compounds↗

Impacts of Non-Ideal Back Contact on Capacitance Measurements in CdTe Solar Cells

CdTe solar cells suffer from a non-ideal back contact which can strongly affect the equivalent circuit model and complicate capacitance measurements. Here, five different back contact materials are deposited on identical CdTe absorbers and their influence on capacitance measurements is characterized. A five-element equivalent circuit model is shown to represent a CdTe solar cell with a non-ideal back contact, and capacitance-frequency (C-f) measurements on each sample clearly show the influence of this contact. Capacitance-voltage (C-V) measurements on each sample show the influence of frequency on measured capacitance. In the AlGaOx/Au sample, temperature dependent C-fs show the back barrier height to be 240 meV, and ongoing measurements will give a comparison of back barrier heights for all samples. This study provides insight into the efficacy of various back contacts and highlights potential errors in the interpretation of capacitance measurements due to the presence of the back contact.

14 SOLAR ENERGY↗

Understanding the Effects of Inhomogeneities at the Back Interface of CdTe‐Based Solar Cells Using 2D Modeling

One-dimensional modeling cannot capture lateral inhomogeneities in CdTe-based devices. Here, we use 2D modeling to investigate the role of varying energetics at the back interface. We consider improvements in the back interface layer (BIL) through either reducing back surface recombination velocity (BSRV) or decreasing the downward band bending near the back interface. We show that when the BSRV is reduced, but strong downward band bending remains, there is no change in the device performance until the BSRV of 90% of the back interface is improved by the BIL. On the other hand, any coverage with a BIL that improves band bending results in device improvements. We use band bending, back interface recombination current densities, and voltage dependent current flow through the device to understand these improvements. The modeling shows that lateral flow of carriers greatly affects device performance, which is not captured in parallel diode modeling, and demonstrates improved understanding with 2D modeling.

2D modelling↗

Optimized NiTe 2 /Ni back contacts via chemical deposition for high performance CdTe solar cells

The development of efficient and stable back contacts remains a major challenge in achieving high performance and long-term stability of CdTe thin-film solar cells. Here, this work revisits the formation of NiTe 2 by chemical bath deposition (CBD) as a back contact for CdTe devices. An optimized CBD recipe, based on high-purity precursors and the addition of copper chloride directly into the bath, was developed and applied to fabricate Cu-doped CdTe solar cells. A modified Cu-free methodology was also applied to Group V doped absorbers. The process included pinhole filling, ion milling, CBD, annealing, and sputtering to form a low-barrier back contact. Devices fabricated using this method achieved consistent open-circuit voltages (V oc ) above 800 mV and fill factors (FF) exceeding 70%. The best Cu-doped devices reached power conversion efficiencies (PCE) above 18 %, and preliminary results with Group V-doped material demonstrated compatibility of the method with high-efficiency, state-of-the-art CdTe devices. This study shows that NiTe 2 /Ni back contacts, formed via an optimized chemical process followed by sputtering of Ni, represent a promising pathway for achieving low-barrier and potentially stable back contacts in modern CdTe photovoltaics.

14 SOLAR ENERGY↗

Back Trajectories during SAIL

This data set contains air mass back trajectories generated during the Surface Atmosphere Integrated Field Laboratory (SAIL) campaign using the Hybrid Single-Particle Lagrangian Integrated Trajectory model (HYSPLIT, Stein et al. 2015, Rolph et al. 2017). For each hour from January 1, 2021 to June 30, 2023, a 96-hour back trajectory was initiated at the SAIL sampling site, starting 100 m above ground level. The calculations used the GDAS meteorological data set with model vertical velocity. The files within this dataset show location and meteorological parameters of the back trajectory analysis. There are 21 columns within each data file. The first 2 columns pertain to back trajectory parameters: the trajectory number (which is always 1) and the meteorological grid number. The next 9 columns pertain to spatiotemporal information: the year, month, day, hour (0-23), and minute of the trajectory, the previous time of the trajectory (in negative hours), and the airmass location (latitude, longitude, and height in m AGL). The rest of the parameters within each file pertains to surface and meteorological characteristics of the airmass: pressure (in hPa), potential temperature (in K), temperature (in K), precipitation rate (in mm/hr), mixing depth (in m), relative humidity (in % relative to liquid water), specific humidity (in g/kg), H2O mixing ratio (in g/kg), underlying terrain height (in meters above sea level), and incoming radiation (in W/m^2).

back trajectory↗

Low-Temperature Gold Deposition Improves CdTe Back Contacts

Improved back contacts can benefit CdTe photovoltaics (PV). In this work, Cd(Se,Te) PV absorbers are cooled during Au evaporation to thermally quench a chemical reaction occurring between gold and CdTe and the generation of a reaction product that lowers device efficiency. Reducing substrate temperature enhances PV power conversion efficiency via open-circuit voltage and fill factor increases. X-ray photoelectron spectroscopy (XPS) reveals that lower temperature also reduces chemical perturbations of the CdTe, potentially linking back contact formation to a CdTe degradation product that hinders PV performance. Comparing reaction enthalpy and substrate heating energy shows that back contact formation by sputtering elemental metals onto ZnTe may exhibit a degradation pathway analogous to that of CdTe/Au reported here. Degradation-diminishing contact formation processes are therefore of general interest for optoelectronic devices, and the reduced substrate temperature in this study is one example.

14 SOLAR ENERGY↗

Patterned dielectric back contact design for GaAs thermophotovoltaic devices

-Patterned-dielectric back contact structures in optoelectronic devices are designed to boost the reflectance of light from the device back surface while retaining a low-resistance pathway for electrical conductance. Their reduced light absorption at near- and sub-bandgap photon energies leads to improved luminescence in light-emitting diodes, greater photon recycling, voltage, and efficiency in photovoltaic cells, and greater recuperation of unabsorbed sub-bandgap light in thermophotovoltaic (TPV) systems. However, diffraction from the patterned features can deflect incident light in propagation directions that lead to light trapping and parasitic absorption in the cell. Here, in this article, we use rigorous coupled-wave analysis (RCWA) to study three-dimensional diffractive scattering of electromagnetic waves by periodic metal point-contact gratings on 1.42-eV GaAs TPV cells, to analyze their effect on unwanted sub-bandgap absorption in order to achieve higher TPV system efficiency. Solutions of Maxwell's equations calculated using RCWA are compared to measured sub-bandgap reflectance in experimental GaAs TPV devices with varying metal point-contact diameters and spacing. Modeling and experiments indicate decreased total reflectance due to these diffractive effects for a small point contact diameter of 1 μm, and this effect is much stronger at higher contact coverage fractions.

14 SOLAR ENERGY↗

Microstructural Passivation of Patterned Al 2 O 3 Back Contacts on CdS/CdTe Solar Cells

Abstract Patterned aluminum oxide (Al 2 O 3 ) back contact on cadmium telluride (CdTe) solar cells can effectively mitigate the loss of the majority carriers while retaining the passivation benefits for minority carriers. This study investigates the impact of the point‐contact geometry on cell performance, where the spacing of the microholes is systematically varied at a constant microhole diameter (≈16 µm). Microhole arrays are created on an evaporated Al 2 O 3 layer (≈30 nm) on CdTe using laser‐beam lithography and selective wet etching processes. Comparative analysis indicates a significant decrease in fill factor (FF) and short‐circuit current ( I SC ) when the contact fraction falls below 30%, likely due to the Al 2 O 3 barrier impeding majority carriers. Above this fraction, FF and I SC are comparable to those of baseline CdTe cells without Al 2 O 3 . Open‐circuit voltage ( V OC ) shows a gradual decrease as Al 2 O 3 coverage is reduced but exhibits a slight increase (<15 mV) when the contact fraction exceeds 30%. Cathodoluminescence (CL) characterization reveals that significantly improved radiative recombination occurs within the CdTe grain bulk with Al 2 O 3 , whereas this effect on grain boundaries is minimal. The findings imply complex local carrier dynamics in the patterned back‐contact region, closely tied to the microstructural properties of CdTe‐based solar cells.

Roy, Etee Kawna↗

Localization of infrasonic sources via Bayesian back projection

SUMMARY A Bayesian framework is investigated for event-specific localization of infrasonic sources using back projection ray tracing. Direction-of-arrival information from array-based detection analysis is used to initialize a back projection ray path originating from the detecting array location and quantifying propagation characteristics from hypothetical source locations. The Fisher statistic, computed from the array’s beam coherence, is mapped into uncertainty in the launch angles of the ray path. Auxiliary parameters previously introduced for solving the Transport equation to compute geometric spreading along ray paths are used to map uncertainty in the ray launch angles into spatial and temporal uncertainties in the ray path. An atmospheric ensemble approach is applied to account for atmospheric uncertainty, and the relation between uncertainties in the atmospheric state and confidence in estimated localization are evaluated using several ensembles with specified variances. The method is evaluated using a synthetic event in the western United States constructed via forward propagation simulations as well as a single-station, multi-arrival detection from a surface explosion in the western United States. Localization results using this event-specific approach are more accurate and exhibit improved precision than existing Bayesian localization methods that leverage generalized, pre-computed propagation statistics.

58 GEOSCIENCES↗