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Results for “back-illuminated”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

The flight test of a grazing incidence relay optics telescope for solar X-ray astronomy utilizing a thinned, back-illuminated CCD detector

The new AS&E Ultrahigh Resolution Soft X-ray Solar Research Rocket Payload has been successfully flown twice on Black Brant IX Sounding Rockets from White Sands Missile Range. These flights, conducted on 15 August 1987 and 11 December 1987, provided the first test of the new payload which consists of 3.8X magnifying hyperboloid-hyperboloid grazing incidence relay optic used in conjunction with an existing Wolter-I primary mirror. An RCA SID 500 series CCD detector was utilized in a thinned, back-illuminated configuration for recording the images. The 5.4 m effective focal length of the compound optics system resulted in a plate scale of 1 arc second per pixel which is comparable to the inherent resolution of the primary mirror. These flights represent the first use in X-ray astronomy of either of these two new technologies. These observations are presented with comparison to laboratory measurements and theoretical expectations of the instrument performance.

Moses, J. Daniel↗
NASA NTRS1989

Improved Si:As BIBIB (Back-Illuminated Blocked-Impurity-Band) hybrid arrays

Results of a program to increase the short wavelength (less than 10 microns) detective quantum efficiency, eta/beta, of Si:As Impurity Band Conduction arrays are presented. The arrays are epitaxially grown Back-Illuminated Blocked (BIB) Impurity-Band (BIBIB) 10x50 detectors bonded to switched-FET multiplexers. It is shown that the 4.7 microns detective quantum efficiency increases proportionately with the thickness of the infrared active layer. A BIB array with a thick active layer, designed for low dark current, exhibits eta/beta = 7 to 9 percent at 4.7 microns for applied bias voltages between 3 and 5 V. The product of quantum efficiency and photoelectric gain, etaG, increases from 0.3 to 2.5 as the voltage increases from 3 to 5 V. Over this voltage range, the dark current increases from 8 to 120 e(-)s(-1) at a device temperature of 4.2 K and is under 70 e(-)s(-1) for all voltages at 2 K. Because of device gain, the effective dark current (equivalent photon rate) is less than 3 e(-)s(-1) under all operating conditions. The effective read noise (equivalent photon noise) is found to be less than 12 electrons under all operating conditions and for integration times between 0.05 and 100 seconds.

Herter, T.↗
NASA NTRS1989

Tests of the Rockwell Si:As Back-Illuminated Blocked-Impurity Band (BIBIB) detectors

Two arrays of Rockwell's Si:As back-illuminated blocked-impurity-band detectors were tested at the Max-Planck-Institute for Astronomy (MPIA) at low background and low temperature for possible use in the astronomical space experiment ISOPHOT. For these measurements special test equipment was put together. A cryostat was mechanically modified to accommodate the arrays and special peripheral electronics was added to a microprocessor system to drive the cold multiplexer and to acquire the output data. The first device, a 16x50 element array on a fan-out board was used to test individual pixels with a trans-impedance-amplifier at a photon background of 10(exp 8) Ph s(-1)cm(-2) and at temperatures of 2.7 to 4.4 K. The noise-equivalent-power NEP is in the range 5 - 7 x 10(exp -18) WHz(exp -1/2), the responsivity is less than or equal to 100 AW(exp -1)(f = 10 Hz). The second device was a 10x50 array including a cold readout electronics of switched FETs (SWIFET). Measurements of this array were done in a background range of 5 x 10(exp 5) to 5 x 10(exp 11) Ph s(exp-1)cm(exp-2) and at operating temperatures between 3.0 and 4.8 K. The NEP ranges from less than 10(exp -18) at the lowest background to 2 x 10(exp -16) WHz(exp -1/2) at the highest flux.

Wolf, J.↗
NASA NTRS1990

Advanced CCD imager technology for use from 1 to 10,000 A

A low-noise, high-sensitivity charge-coupled-device (CCD) technology for imaging applications extending from the soft X-ray (1 A) to the near-infrared (10,000 A) regimes was developed together with a fabrication technology for making back-illuminated versions of these devices with quantum efficiencies as high as 90 percent from 5000 to 7000 A. The efforts have focused on two devices, a 64 x 64 pixel back-illuminated imager with two output ports that operates at 2000 frames per second with 23 electrons read noise, and a larger device, with 420 x 420 pixel format, designed for lower frame rates with noise as low as 1.5 electrons and used at visible, UV, and X-ray wavelengths. Applications to plasma diagnostics include Thomson scattering and high-frame-rate imaging in the visible, as well as X-ray imaging and bolometry.

Twichell, J. C.↗
NASA NTRS1996

Night Vision Camera

PixelVision, Inc. developed the Night Video NV652 Back-illuminated CCD Camera, based on the expertise of a former Jet Propulsion Laboratory employee and a former employee of Scientific Imaging Technologies, Inc. The camera operates without an image intensifier, using back-illuminated and thinned CCD technology to achieve extremely low light level imaging performance. The advantages of PixelVision's system over conventional cameras include greater resolution and better target identification under low light conditions, lower cost and a longer lifetime. It is used commercially for research and aviation.

Source record↗
NASA NTRS1978

Determination of the structure and heating mechanisms of coronal loops from soft X-ray observations with the solar probe

High resolution soft X-ray imaging from the solar probe is justified in terms of the expected scientific returns which include the determination of the temperature and density structure of a coronal loop. The advantages of the grazing incidence telescope over the multiple pinhole camera are discussed. An instrument package is described which includes a grazing incidence mirror, a thermal prefilter, a three position filter wheel and a focal plane detector baselined as an 800 by 800 back-illuminated charge coupled device. The structural assembly together with the data processing equipment would draw heavily on the designs being developed for the Solar Polar Mission.

Davis, J. M.↗
NASA NTRS1980

Direct detection of XUV radiation with a CCD

A thinned CCD illuminated from the back has been used for direct imaging in the 584 and 304 A resonance lines of helium and in the 736 A line of neon. During operation, the CCD was cooled to minus 10 C and output was displayed on a CRT screen or in numerical printout. The results demonstrate that the back-illuminated CCD can be used as a position-sensitive flux detector with good imaging properties over a wide range of photon energies, including the extreme ultraviolet.

Burstein, P.↗
NASA NTRS1981

Soft X-ray and XUV imaging with a charge-coupled device /CCD/-based detector

A soft X-ray/XUV imaging camera which uses a thinned, back-illuminated, all-buried channel RCA CCD for radiation sensing has been built and tested. The camera is a slow-scan device which makes possible frame integration if necessary. The detection characteristics of the device have been tested over the 15-1500 eV range. The response was linear with exposure up to 0.2-0.4 erg/sq cm; saturation occurred at greater exposures. Attention is given to attempts to resolve single photons with energies of 1.5 keV.

Loter, N. G.↗
NASA NTRS1984

A CCD System for Photometry of Direct and Spectroscopic Images

A charge-coupled device (CCD) for direct imagery at the focus of a ground-based telescope and for high dispersion spectroscopy of stars is evaluated. The CCD is an RCA SID 53612 thinned, buried channel array of 512x320 30-micron square pixels that are back-illuminated and refrigerated to about -60 C in a rugged, RF-shielded vacuum housing. The double-correlated sampling (integrator) readout system, the Z80 microprocessor readout control system, and the data collection system are described. The readout noise is 120 electron-hole pairs (ehp) per pixel per readout, the thermal dark current is 50 ehp/pixel/sec, and the scale of the 12-bit analog-to-digital converter is 25 ehp/AD unit. Unique features of this system are compared to other astronomical implementations of the same model of CCD.

Frecker, J. E.↗
NASA NTRS1985

The Extended Range X-Ray Telescope center director's discretionary fund report

An Extended Range X-Ray Telescope (ERXRT) of high sensitivity and spatial resolution capable of functioning over a broad region of the X-ray/XUV portion of the spectrum has been designed and analyzed. This system has been configured around the glancing-incidence Wolter Type I X-ray mirror system which was flown on the Skylab Apollo Telescope Mount as ATM Experiment S-056. Enhanced sensitivity over a vastly broader spectral range can be realized by the utilization of a thinned, back-illuminated, buried-channel Charge Coupled Device (CCD) as the X-ray/XUV detector rather than photographic film. However, to maintain the high spatial resolution inherent in the X-ray optics when a CCD of 30 micron pixel size is used, it is necessary to increase the telescope plate scale. This can be accomplished by use of a glancing-incidence X-ray microscope to enlarge and re-focus the primary image onto the focal surface of the CCD.

Hoover, R. B.↗
NASA NTRS1985

Radiation damage in high-resistivity silicon solar cells

High-resistivity silicon solar cells exhibit reduced radiation damage when light is incident on the gridded back surface. Under back illumination, radiation damage decreases as cell resistivity increases; under front illumination, radiation damage increases as cell resistivity increases. Thin back-illuminated cells outperform conventional 10 omega cm 50 and 200 micron cells at low 1-MeV electron fluences. However, at higher fluences, the conventional cells exhibit superior radiation resistance. This is attributed to the low BOL diffusion lengths observed in the thin, sack-illuminated cell. These results are discussed in terms of injected charge distributions, electric fields in the cell base, and the effects of a dominant boron-oxygen defect.

Weinberg, I.↗
NASA NTRS1987

Photon counting image sensor development for astronomical applications

Specially built intensified CCD (ICCD) detector tubes were purchased and the performance of the electron bombardment process was investigated. In addition to studying the signal characteristics of the photoevents, there was interest in demonstrating that back-illuminated chips were not susceptible to radiation damage to their clocking electrodes. How to perform a centroid analysis for a 2-dimensional Gaussian distribution of charge is described. Measurement of the projection (along columns or rows) of the average charge spread profile is discussed. The development and flight of the Interstellar Medium Absorption Profile Spectrograph (IMAPS) is discussed.

Jenkins, Edward B.↗
NASA NTRS1987

Ultraviolet and extreme ultraviolet response of charge-coupled-device detectors

Results of a program to enhance the ultraviolet and extreme ultraviolet response of charge-coupled devices are presented. The ultimate goal of the program is to develop a large format device with both high and stable quantum efficiency from 100 to 3000 A that can be used as a windowless imaging detector in a space environment. Ultraviolet quantum efficiency measurements have been made for several ion-implanted and laser-annealed test CCDs. Quantum efficiencies as high as 22 percent at 2500 A, where the absorption depth in silicon is about 55 A, have been observed in one such test CCD. Quantum efficiency measurements of standard back-illuminated CCDs are also presented.

Stern, R. A.↗
NASA NTRS1988

The infrared spectrograph during the SIRTF pre-definition phase

A test facility was set up to evaluate back-illuminated impurity band detectors constructed for an infrared spectrograph to be used on the Space Infrared Telescope Facility (SIRTF). Equipment built to perform the tests on these arrays is described. Initial tests have been geared toward determining dark current and read noise for the array. Four prior progress reports are incorporated into this report. They describe the first efforts in the detector development and testing effort; testing details and a new spectrograph concept; a discussion of resolution issues raised by the new design; management activities; a review of computer software and testing facility hardware; and a review of the preamplifier constructed as well as a revised schematic of the detector evaluation facility.

Houck, James R.↗
NASA NTRS1990

HII regions in IC 1613: The ISM in a nearby dwarf irregular galaxy

IC 1613, a nearby (725 kpc distant) dwarf irregular galaxy, has always been known to contain large, ring-shaped HII regions in its northeast corner. A new H alpha image has been obtained using the Bell Labs Charge Coupled Device (CCD) camera, an RCA 320 X 512 pixel-thinned, back-illuminated CCD, an H alpha filter of central wavelength 6562 A and width (full width half maximum) of 30 A, and the 42 inch telescope at Lowell Observatory. The low resolution images exhibit many new, faint features.

Price, Jill S.↗
NASA NTRS1992

Performance characteristics of STIS detectors

We report quantum efficiency measurements of back-illuminated, ion-implanted, laser-annealed charge coupled devices (CCD's) in the wavelength range 13-10,000 A. The equivalent quantum efficiency (EQE = effective photons detected per incident photon) ranges from a minimum of 5 percent as 1216 A to a maximum of 87 percent at 135 A. Using a simple relationship for the charge collection efficiency of the CCD pixels as a function of depth, we present a semi-empirical model with few parameters which reproduces our measurements with a fair degree of accuracy. The advantage of this model is that is can be used to predict CCD QE performance for shallow backside implanted devices without detailed solution of a system of differential equations, as in conventional approaches, and yields a simple analytic form for the charge collection efficiency which is adequate for detector calibration purposes. Making detailed assumptions about the dopant profile, we also solve the carrier density and continuity equations in order to relate our semi-empirical model parameters to surface and bulk device properties. The latter procedure helps to better establish device processing parameters for a given level of CCD QE performance.

Stern, Robert A.↗
NASA NTRS1993

High-performance visible/UV CCD focal plane technology for spacebased applications

We describe recent technology developments aimed at large CCD imagers for space based applications in the visible and UV. Some of the principal areas of effort include work on reducing device degradation in the natural space-radiation environment, improvements in quantum efficiency in the visible and UV, and larger-device formats. One of the most serious hazards for space based CCD's operating at low signal levels is the displacement damage resulting from bombardment by energetic protons. Such damage degrades charge-transfer efficiency and increases dark current. We have achieved improved hardness to proton-induced displacement damage by selective ion implants into the CCD channel and by reduced temperature of operation. To attain high quantum efficiency across the visible and UV we have developed a technology for back-illuminated CCD's. With suitable antireflection (AR) coatings such devices have quantum efficiencies near 90 percent in the 500-700-nm band. In the UV band from 200 to 400 nm, where it is difficult to find coatings that are sufficiently transparent and can provide good matching to the high refractive index of silicon, we have been able to substantially increase the quantum efficiency using a thin film of HfO2 as an AR coating. These technology efforts were applied to a 420 x 420-pixel frame-transfer imager, and future work will be extended to a 1024 x 1024-pixel device now under development.

Burke, B. E.↗