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Results for “backside-illumination”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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15 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Excimer laser processing of backside-illuminated CCDS

An excimer laser is used to activate previously implanted dopants on the backside of a backside-illuminated CCD. The controlled ion implantation of the backside and subsequent thin layer heating and recrystallization by the short wavelength pulsed excimer laser simultaneously activates the dopant and anneals out implant damage. This improves the dark current response, repairs defective pixels and improves spectral response. This process heats a very thin layer of the material to high temperatures on a nanosecond time scale while the bulk of the delicate CCD substrate remains at low temperature. Excimer laser processing backside-illuminated CCD's enables salvage and utilization of otherwise nonfunctional components by bringing their dark current response to within an acceptable range. This process is particularly useful for solid state imaging detectors used in commercial, scientific and government applications requiring a wide spectral response and low light level detection.

Russell, S. D.↗
NASA NTRS2023

Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition

Dark current degradation, origins, and annealing behavior after x-ray irradiation are studied in a P-type, hole collecting, backside-illuminated image sensor currently being developed at STMicroelectronics and based on deep-trenched photo-MOS pixels. Different biasing conditions during irradiation, i.e. grounded or biased and sequenced, are compared. The dark current increase with total ionizing dose (TID) and the dark current annealing behavior seem to be driven by the backside interface between the P-epitaxy of the pixels and the ONO stack. Despite still being under development, this pixel architecture already exhibits both very good electro-optical performance and a better radiation hardness than pinned photodiode-based CMOS Image sensors that benefit from the same advanced CIS processing technologies. At high total dose range, the photogate challenges custom Radiation-Hardened-by-Design photodiodes by exhibiting a comparable radiation tolerance while bringing new features such as high-resolution or Correlated Double Sampling.

CMOS Image Sensor (CIS)↗
NASA NTRS2010

Back-illuminated imager and method for making electrical and optical connections to same

Methods for bringing or exposing metal pads or traces to the backside of a backside-illuminated imager allow the pads or traces to reside on the illumination side for electrical connection. These methods provide a solution to a key packaging problem for backside thinned imagers. The methods also provide alignment marks for integrating color filters and microlenses to the imager pixels residing on the frontside of the wafer, enabling high performance multispectral and high sensitivity imagers, including those with extremely small pixel pitch. In addition, the methods incorporate a passivation layer for protection of devices against external contamination, and allow interface trap density reduction via thermal annealing. Backside-illuminated imagers with illumination side electrical connections are also disclosed.

Pain, Bedabrata↗
NASA NTRS1994

Delta-Doped CCDs for Enhanced UV Performance

Thin, backside-illuminated CCds are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100 percent internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully-processed commercial CCd die in which 30 percent of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months.

silicon↗
NASA NTRS1976

A large imaging array CCD program

Test results on charge coupled device (CCD) imaging arrays (100 x 160 pixel and 400 x 400 pixel) employed as imaging detectors are reported, along with expected low light level (LLL) performance. Reasons for selection of a thinned backside-illuminated buried-channel three-phase CCD variant are indicated. The LLL performance and long storage time capability of the CCD imaging array recommend it for stellar photometry, detection and tracking of faint objects, and other astronomical applications.

Vescelus, F. E.↗
NASA NTRS1984

Calculation of resolution for a windowless charge coupled device (CCD)-Digicon

A new version of an intensified charge-coupled device (ICCD) system, which is based on the incorporation of a CsI mesh photocathode and a thinned backside-illuminated CCD into a Space Telescope design Digicon tube, is being developed for future use in space-based observations in the Extreme Ultraviolet waveband. In this paper, a report is presented of the results of computer simulations involving the effects of the non-uniform electrostatic field near the mesh photocathode on imaging properties (especially, the spread function and modulation transfer function) of the detector system. The results are of importance in the design of the front end of the tube and the selection of optimum tube operating conditions. The overall resolution characteristics of the tube, including the effects of the mesh, the electron optics of the region between the mesh photocathode and the CCD target, and the structure of the CCD itself, are estimated.

Jia, X. Z.↗
NASA NTRS1985

Investigation of CCD-digicon detector system characteristics

The reported investigation was undertaken with the aim to develop state-of-the-art detector technology for use in astronomical observations. Basic properties of the Digicon concept are to be extended to the two-dimensional capabilities of CCDs. The basic CCD-Digicon tube configuration utilizes a thinned, backside-illuminated CCD in place of the linear, discrete diode array at the back end of a windowed space telescope (ST) design Digicon tube. It is pointed out that the detector system built around the considered device promises to exhibit high photometric accuracy in combination with large numbers of uniform independent resolution elements. Potential applications include space astronomy missions with capability for observations extending into the extreme ultraviolet spectral region. Attention is given to continuing investigations into the characteristics of CCD response to backside photoelectron bombardment, taking into account the development of charge pulse centroiding readout techniques in combination with magnetic deflection substepping.

Hier, R. G.↗
NASA NTRS1987

Charge-coupled-device response to electron beam energies of less than 1 keV up to 20 keV

Recent developments of backside treatment for the backside-illuminated scientifc CCD imagers have shown near-theoretical efficiency even at the short wavelength region of the spectrum. By using SEM performance comparisons of backside-treated and untreated CCDs to an electron flux varying from 1 to 100 pA and beam energy ranging from less than 1 keV up to 20 keV are obtained. The theoretical analysis, the SEM testing procedure, and the quantum efficiency measurement results are presented. It is shown, for example, that the average quantum efficiency increases from less than 1 percent for an untreated CCD to nearly 40 percent for a backside-treated CCD at a beam energy of 1 kev.

Daud, Taher↗
NASA NTRS1987

Flash technology for charge-coupled-device imaging in the ultraviolet

The introduction of the flash gate has made possible the fabrication of backside-illuminated CCDs with high sensitivity and stability throughout a wide range of ultraviolet and visible wavelengths (100 to 5000 A). It had been determined previously that the characteristics of the oxide layer beneath the gate are critical to the ultimate achievable CCD performance. However, by creating an improved oxide layer in conjunction with the flash gate, it is now possible to consistently produce CCDs with near-ideal UV performance. In this paper recent results and related background theory that optimize the flash gate specifically for application in the UV are presented.

Janesick, James R.↗
NASA NTRS1987

Optical tracking using charge-coupled devices

The extraction of precise positional information from CCD images of point-source and extended optical targets is considered, and three examples of CCD optical trackers for space-based operation are described. For ideal point sources, a centerfinding accuracy of 1/100 pixel and a measuremet jitter of less than 1/250 pixel have been obtained using thinned, backside-illuminated devices. Tracker accuracy is shown to be limited by small variation in the optical image shape. Techniques for tracking, and methods for searching the entire field for the desired targets, are also discussed.

Stanton, Richard H.↗
NASA NTRS1989

Low temperature multi-alkali photocathode processing technique for sealed intensified CCD tubes

A low temperature photocathode process has been used to fabricate an intensified CCD visual photocathode image tube, by incorporating a thinned, backside-illumined CCD as the target anode of a digicon tube of Hubble Space Telescope (HST) design. The CCD digicon tube employs the HST's sodium bialkali photocathode and MgF2 substrate, thereby allowing a direct photocathode quantum efficiency comparison between photocathodes produced by the presently employed low temperature process and those of the conventional high temperature process. Attention is given to the processing chamber used, as well as the details of gas desorption and photocathode processing.

Doliber, D. L.↗
NASA NTRS1993

Stable vacuum UV CCD detectors designed for space flight experiments

Thinned, backside-illuminated, p-channel CCD images are under development which can exploit the surface potential in VUV applications, yielding enhanced quantum efficiency to wavelengths as short as 1100 A. The current goal is production of large-format, 5-micron pixel imagers for spectrographic and imaging VUV spaceflight experiments. Model predictions of the effect of device design on quantum efficiency, well capacity, and crosstalk are presented for such 5-micron-approaching pixel sizes.

Socker, Dennis G.↗
NASA NTRS1999

An Indium Gallium Arsenide Visible/SWIR Focal Plane Array for Low Light Level Imaging

PIN photodiodes fabricated from indium gallium arsenide lattice-matched to indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD < 10(exp -8) A/sq cm), and high shunt resistance-area products (RoA > 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.

Cohen, Marshall J.↗
NASA NTRS1994

Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

Hoenk, Michael E.↗