Search NASA⌕ Search

SEARCH · Search NASA

Results for “beam blocker”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

2 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Isotope harvesting from a NSCL beam blocker: Isolation of 173,174 lu

A decommissioned beam blocker from the National Superconducting Cyclotron Laboratory was processed for recovery of long-lived Lu radioisotopes at Lawrence Livermore National Laboratory. The beam blocker was a W alloy that had built up considerable levels of activation from high energy particle irradiation over the course of 20 years. The isolation of 173,174 Lu from the bulk material required a complex chemical separation scheme due to the large mass and the wide variety of elements present. The final yield of 173,174 Lu was 76.7 ± 4.8% with an extremely high radiopurity and chemical purity. The reduction in W mass from the initial material to the final sample was 8 × 10 10 . In conclusion, the results show great promise for extracting large quantities of Lu radioisotopes from these types of W beam blockers at the Facility for Rare Isotope Beams, which will be irradiated at levels significantly higher than the beam blocker investigated here.

and nuclear chemistry↗
DOE OSTI2025

Optically Addressable Light Valve Based on a GaN:Mn Photoconductor

Semi-insulating manganese-doped gallium nitride (GaN:Mn) layers epitaxially grown on unintentionally doped GaN substrates were used as photoconductors in optically addressable light valves (OALVs) to withstand higher operational laser fluences compared to current state-of-the-art OALVs where bismuth silicon oxide (BSO; Bi 12 SiO 20 ) layers are used as photoconductors. GaN:Mn promises to be an exciting material for optoelectronic operations due to its large laser fluence handling capability and photoresponsivity near the band edge. The laser damage thresholds for the semi-insulating epitaxial GaN:Mn layer and the n-type substrate layer were measured to be 2.4 and 4.2 J/cm 2 , respectively. These are 6–10 times higher than that of BSO (0.4 J/cm 2 ). These measurements were performed by exposing ~200 sites on the samples to increasing fluence levels from a Gaussian pulsed Nd:YAG laser system (1064 nm) operating at a 5 Hz repetition rate with a 3 ns pulse width. Photoresponsivity of the GaN:Mn material was investigated at discrete wavelengths of 447, 405, and 380 nm. Further, the peak photoresponsivity was observed under an illumination wavelength of 380 nm and is attributed to stronger absorption. The OALV was fabricated by attaching a 110-μm-thick GaN:Mn layer grown on a 280-μm-thick n-GaN layer to a 3-mm-thick BK7 optical window. A twisted nematic E7 liquid crystal was introduced to the 5 μm gap between the two components. Transmission levels of >90% were achieved for the fabricated OALVs for a peak voltage of 40 V, constrained by transmission “bleed-through”.

36 MATERIALS SCIENCE↗