Predicting Strain in Cure Shrinkage Induced Epoxy/Metal Bilayer Beam Bending.
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We propose a method to produce valley-polarized electron beams using a bilayer graphene npn junction. By analyzing the transmission properties of electrons through the junction with zigzag interface in the presence of trigonal warping, we observe that there exist a range of incident energies and barrier heights in which transmitted electrons are well polarized and collimated. From this observation and by performing numerical simulations, it is demonstrated that valley-dependent electronic currents with nearly perfect polarization can be generated. We also show that the peak-to-peak separation angle between the polarized currents is tunable either by incident energy or by barrier height each of which is controlled by using top and back gate voltages. The results can be used for constructing an electron beam splitter to produce valley-polarized currents.
Solar sailing enables efficient propellant-free attitude adjustment and orbital maneuvers of solar sail spacecraft with high area-to-mass ratios. However, the heavy supporting mass for large solar sails inevitably leads to low area-to-mass ratios. Inspired by chip-scale satellites, a chip-scale solar sail system named ChipSail, consisting of microrobotic solar sails and a chip-scale satellite, was proposed in this work. The structural design and reconfigurable mechanisms of an electrothermally driven microrobotic solar sail made of Al\Ni 50 Ti 50 bilayer beams were introduced, and the theoretical model of its electro-thermo-mechanical behaviors was established. The analytical solutions to the out-of-plane deformation of the solar sail structure appeared to be in good agreement with the finite element analysis (FEA) results. A representative prototype of such solar sail structures was fabricated on silicon wafers using surface and bulk microfabrication, followed by an in-situ experiment of its reconfigurable property under controlled electrothermal actuation. The experimental results demonstrated significant electro-thermo-mechanical deformation of such microrobotic bilayer solar sails, showing great potential in the development of the ChipSail system. Analytical solutions to the electro-thermo-mechanical model, as well as the fabrication process and characterization techniques, provided a rapid performance evaluation and optimization of such microrobotic bilayer solar sails for the ChipSail.
In this paper, a new approach for a multilayer elastic beam to provide a driving force and driving distance for a MEMS safe and arming system is presented. In particular this is applied where a monolayer elastic beam cannot provide adequate driving force and driving distance at the same time in limited space. Compared with thicker elastic beams, the bilayer elastic beam can provide twice the driving force of a monolayer beam to guarantee the MEMS safe and arming systems work reliably without decreasing the driving distance. In this paper, the theoretical analysis, numerical simulation and experimental verification of the multilayer elastic beam is presented. The numerical simulation and experimental results show that the bilayer elastic provides 1.8–2 times the driving force of a monolayer, and a method that improves driving force without reducing the driving distance.
Reactive multilayers consisting of alternating layers of Al and Pt were irradiated by single laser pulses ranging from 100 μs to 100 ms in duration, resulting in the initiation of rapid, self-propagating reactions. The threshold intensities for ignition vary with the focused laser beam diameter, bilayer thickness, and pulse length and are affected by solid state reactions and conduction of heat away from the irradiated regions. High-speed photography was used to observe ignition dynamics during irradiation and elucidate the effects of heat transfer into a multilayer foil. For an increasing laser pulse length, the ignition process transitioned from a more uniform to a less uniform temperature profile within the laser-heated zone. A more uniform temperature profile is attributed to rapid heating rates and heat localization for shorter laser pulses, and a less uniform temperature profile is due to slower heating of reactants and conduction during irradiation by longer laser pulses. Finite element simulations of laser heating using measured threshold intensities indicate that micron-scale ignition of Al/Pt occurs at low temperatures, below the melting point of both reactants.
Controlling the crystal structure is a powerful approach for manipulating the fundamental properties of solids. In van der Waals materials, this control can be achieved by modifying the stacking order through rotation and translation between the layers. Here, we observed stacking-dependent interlayer magnetism in the two-dimensional (2D) magnetic semiconductor chromium tribromide (CrBr 3 ), which was enabled by the successful growth of its monolayer and bilayer through molecular beam epitaxy. Using in situ spin-polarized scanning tunneling microscopy and spectroscopy, we directly correlate the atomic lattice structure with the observed magnetic order. Although the individual monolayer CrBr 3 is ferromagnetic, the interlayer coupling in bilayer depends on the stacking order and can be either ferromagnetic or antiferromagnetic. Our observations pave the way for manipulating 2D magnetism with layer twist angle control.
We report selective area growth of large area homogeneous Bernal stacked bilayer epitaxial graphene (BLEG) on 4H-SiC (0001) substrate by electron-beam irradiation. Sublimation of Si occurs by energetic electron irradiations on SiC surface via breaking of Si–C bonds in the localized region, which allows the selective growth of graphene. Raman measurements ensure the formation of homogeneous BLEG with weak compressive strain of −0.08%. The carrier mobility of large area BLEG is ∼5100 cm{sup 2} V{sup −1} s{sup −1} with a sheet carrier density of 2.2 × 10{sup 13} cm{sup −2}. Current-voltage measurements reveal that BLEG on 4H-SiC forms a Schottky junction with an operation at mA level. Our study reveals that the barrier height at the Schottky junction is low (∼0.58 eV) due to the Fermi-level pinning above the Dirac point.
A bilayer of iron on chromium nitride (Fe/CrN) is an interesting system for exchange biasing and sensing applications as the Néel temperature of CrN is 280 K and the Curie temperature of Fe is 1043 K. In this paper, we study the crystal and magnetic structures of the Fe/CrN interface at the atomic level. High quality epitaxial Fe/CrN bilayers prepared by molecular beam epitaxy grow in 001 orientation on MgO(001) substrates with uniform layer thicknesses and sharp interfaces. Our data reveal the epitaxial correlation between Fe and CrN crystals and their magnetic structures at the interface. The magnetic anisotropy directions of Fe and CrN are found parallel to [110] MgO . We studied the electronic and magnetic properties of the interface by performing the first-principles total-energy calculations. Here, we present a model that combines the crystal and magnetic structures of the Fe/CrN bilayer and fully explains all results.
Understanding domain wall pinning and propagation in nanowires are important for future spintronics and nanoparticle manipulation technologies. Here, the effects of microscopic local modification of the magnetic properties, induced by focused-ion-beam intermixing, in NiFe/Au bilayer nanowires on the pinning behavior of domain walls was investigated. The effects of irradiation dose and the length of the irradiated features were investigated experimentally. The results are considered in the context of detailed quasi-static micromagnetic simulations, where the ion-induced modification was represented as a local reduction of the saturation magnetization. Simulations show that domain wall pinning behavior depends on the magnitude of the magnetization change, the length of the modified region, and the domain wall structure. Comparative analysis indicates that reduced saturation magnetisation is not solely responsible for the experimentally observed pinning behavior.
Superconductivity in monolayer niobium diselenide (NbSe 2 ) on bilayer graphene is studied by electrical transport. Monolayer NbSe 2 is grown on bilayer graphene by molecular beam epitaxy and capped with a selenium film to avoid degradation in air. The selenium capped samples have T C = 1.9 K. In situ measurements down to 4 K in ultrahigh vacuum show that the effect of the selenium layer on the transport is negligible. Lastly, the superconducting transition and upper critical fields in air exposed and selenium capped samples are compared. Schematic of monolayer NbSe 2 /bilayer graphene with selenium capping layer and electrical contacts.
While the discovery of two-dimensional (2D) magnets opens the door for fundamental physics and next-generation spintronics, it is technically challenging to achieve the room-temperature ferromagnetic (FM) order in a way compatible with potential device applications. Here in this paper, we report the growth and properties of single- and few-layer CrTe 2 , a van der Waals (vdW) material, on bilayer graphene by molecular beam epitaxy (MBE). Intrinsic ferromagnetism with a Curie temperature (TC) up to 300 K, an atomic magnetic moment of ~0.21 μ B /Cr and perpendicular magnetic anisotropy (PMA) constant (K u ) of 4.89 × 10 5 erg/cm 3 at room temperature in these few-monolayer films have been unambiguously evidenced by superconducting quantum interference device and X-ray magnetic circular dichroism. This intrinsic ferromagnetism has also been identified by the splitting of majority and minority band dispersions with ~0.2 eV at Г point using angle-resolved photoemission spectroscopy. The FM order is preserved with the film thickness down to a monolayer (T C ~ 200 K), benefiting from the strong PMA and weak interlayer coupling. The successful MBE growth of 2D FM CrTe 2 films with room-temperature ferromagnetism opens a new avenue for developing large-scale 2D magnet-based spintronics devices.
We used atomic-layer molecular beam epitaxy to synthesize bilayers of a cuprate metal (La 1.55 Sr 0.45 CuO 4 ) and a cuprate insulator (La 2 CuO 4 ), in which each layer is just one unit cells thick. We have studied the magnetic field and temperature dependence of the complex sheet conductance, σ(ω), of these films. Experiments have been carried out at frequencies between 2 and 50 MHz using the single-spiral coil technique. We found that: (i) the inductive response starts at ΔT = 3 K lower temperatures than Re σ(T), which in turn is characterized by a peak close to the transition, (ii) this shift is almost constant with magnetic field up to 14 mT; (iii) ΔT increases sharply up to 4 K at larger fields and becomes constant up to 8 T; (iv) the vortexdiffusion constant D(T) is not linear with T at low temperatures as in the case of free vortices, but is rather exponential due to pinning of vortex cores, and (v) the dynamic Berezinski–Kosterlitz–Thouless (BKT) transition temperature occurs at the point where Y=(l ω /ξ+) 2 = 1. As a result, our experimental results can be described well by the extended dynamic theory of the BKT transition and dynamics of bound vortex–antivortex pairs with short separation lengths.
Abstract Dimensional modifications play a crucial role in various applications, especially in the context of device miniaturization, giving rise to novel quantum phenomena. The many-body dynamics induced by dimensional modifications, including electron-electron, electron-phonon, electron-magnon and electron-plasmon coupling, are known to significantly affect the atomic and electronic properties of the materials. By reducing the dimensionality of orthorhombic CoSe 2 and forming heterostructure with bilayer graphene using molecular beam epitaxy, we unveil the emergence of two types of phase transitions through angle-resolved photoemission spectroscopy and scanning tunneling microscopy measurements. We disclose that the 2 × 1 superstructure is associated with charge density wave induced by Fermi surface nesting, characterized by a transition temperature of 340 K. Additionally, another phase transition at temperature of 160 K based on temperature dependent gap evolution are observed with renormalized electronic structure induced by electron-boson coupling. These discoveries of the electronic and atomic modifications, influenced by electron-electron and electron-boson interactions, underscore that many-body physics play significant roles in understanding low-dimensional properties of non-van der Waals Co-chalcogenides and related heterostructures. Graphical Abstract
Atomic-scale engineering typically involves bottom-up approaches, leveraging parameters such as temperature, partial pressures, and chemical affinity to promote spontaneous arrangement of atoms. These parameters are applied globally, resulting in atomic-scale features scattered probabilistically throughout the material. In a top-down approach, different regions of the material are exposed to different parameters, resulting in structural changes varying on the scale of the resolution. In this work, the application of global and local parameters is combined in an aberration-corrected scanning transmission electron microscope (STEM) to demonstrate atomic-scale precision patterning of atoms in twisted bilayer graphene. The focused electron beam is used to define attachment points for foreign atoms through the controlled ejection of carbon atoms from the graphene lattice. The sample environment is staged with nearby source materials such that the sample temperature can induce migration of the source atoms across the sample surface. Under these conditions, the electron-beam (top-down) enables carbon atoms in the graphene to be replaced spontaneously by diffusing adatoms (bottom-up). Using image-based feedback control, arbitrary patterns of atoms and atom clusters are attached to the twisted bilayer graphene with limited human interaction. Finally, the role of substrate temperature on adatom and vacancy diffusion is explored by first-principles simulations.
Monolayer transition metal dichalcogenides (TMDCs) in the 1T' structural phase have drawn a great deal of attention due to the prediction of quantum spin Hall insulator states. The band inversion and the concomitant changes in the band topology induced by the structural distortion from 1T to 1T' phases are well established. However, the bandgap opening due to the strong spin-orbit coupling (SOC) is only verified for 1T'-WTe 2 recently and still debated for other TMDCs. Here we report a successful growth of high-quality monolayer 1T'-MoTe 2 on a bilayer graphene substrate through molecular beam epitaxy. Using in situ angle-resolved photoemission spectroscopy (ARPES), we have investigated the low-energy electronic structure and Fermi surface topology. The SOC-induced breaking of the band degeneracy points between the valence and conduction bands is clearly observed by ARPES. However, the strength of SOC is found to be insufficient to open a bandgap, which makes monolayer 1T'-MoTe 2 on bilayer graphene a semimetal.
In state-of-the art polycrystalline CdTe photovoltaics, group-V dopant activation is about 2%. Low activation can create electronic defects and lead to recombination and band tail losses. To develop methods to overcome this limitation, dopant activation was systematically investigated using molecular beam epitaxy (MBE) grown single crystal bilayers of As-doped CdTe on undoped CdTe. Results suggest multiple paths for improved As-activation in polycrystalline CdTe-based devices. It was found that the carrier concentration in this MBE material saturated at ∼3 × 1016 cm−3, with high levels (>50%) of As-activation possible. High activation could be achieved with a post-growth activation temperature of ∼450 °C, when the initial doping level was below the saturation level. However, at typical polycrystalline As incorporation levels (>5 × 1016 cm−3), the excess As is inactive or compensating, requiring elevated temperatures (500–600 °C) to achieve high activation. Oxygen in the annealing ambient was detrimental, while the effect of CdCl2 in the ambient is more case-dependent. A 575 °C activation anneal was combined with a 450 °C CdCl2 treatment to better understand the implications for polycrystalline CdTe. Interestingly, on highly doped samples, processes ending with a high temperature step displayed high activation, while those ending at 450 °C significantly reduced the carrier concentration (with or without CdCl2 in the ambient). Low activation can be restored with another high temperature anneal, allowing reproducible toggling between high and low activation based on the final temperature. Photoluminescence revealed the presence of donor–acceptor pairs in the low activation state that appear to be associated with a compensating defect.
We used atomic-layer molecular beam epitaxy (ALL-MBE) to synthesize bilayer films of a cuprate metal (La1.65Sr0.45CuO4La1.65Sr0.45CuO4, LSCO) and a cuprate insulator (La2CuO4La2CuO4, LCO), in which interface superconductivity occurs in a layer that is just one-half unit cell thick. We have studied the magnetic field and temperature dependence of the complex sheet conductance, σ(ω)σ(ω), of these films, and compared them to κκ-(BEDT-TTF)2Cu[N(CN)2]Br2Cu[N(CN)2]Br single crystals. The magnetic field HH was applied both parallel and perpendicular to the 2D conducting layers. Experiments have been carried out at frequencies between 23 kHz and 50 MHz using either two-coil mutual inductance technique, or the LC resonators with spiral or rectangular coils. The real and the imaginary parts of the mutual-inductance M(T,ω)M(T,ω) between the coil and the sample were measured and converted to complex conductivity. For HH perpendicular to the conducting layers, we observed almost identical behavior in both films and κκ-Br single crystals: (i) the transition onset in the inductive response, L-1kLk-1(T) occurs at a temperature lower by 2 K than in Reσ(T)Reσ(T), (ii) this shift is almost constant with magnetic field up to 8 T; (iii) the vortex diffusion constant D(T)D(T) is exponential due to pinning of vortex cores. These results can be described by the extended dynamic theory of the Berezinski–Kosterlitz–Thouless (BKT) transition and dynamics of bound vortex–antivortex pairs with short separation lengths.
2D van der Waals ferromagnets hold immense promise for spintronic applications due to their controllability and versatility. Despite their significance, the realization and in-depth characterization of ferromagnetic materials in atomically thin single layers, close to the true 2D limit, has been scarce. Here, a successful synthesis of monolayer (ML) 1T-CrTe2 is reported on a bilayer graphene (BLG) substrate via molecular beam epitaxy. Using angle-resolved photoemission spectroscopy and magneto-optical Kerr effect measurements, that the ferromagnetic transition is observed at the Curie temperature (TC) of 150 K in ML 1T-CrTe2 on BLG, accompanied by unconventional temperature-dependent band evolutions. The spectroscopic analysis and first-principle calculations reveal that the ferromagnetism may arise from Goodenough-Kanamori super-exchange and double-exchange interactions, enhanced by the lattice distortion and the electron doping from the BLG substrate. These findings provide pivotal insight into the fundamental understanding of mechanisms governing 2D ferromagnetism and offer a pathway for engineering higher TC in 2D materials for future spintronic devices.