Search NASA⌕ Search

SEARCH · Search NASA

Results for “boron carbide”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records

Experimental observations of amorphization in multiple generations of boron carbide

Boron carbide is an excellent armor material due to its light weight and ultrahigh hardness. However, high-rate mechanical behavior can be degraded by stress-induced amorphization. In this paper, we review the progressive advances in the understanding of amorphization in three successive generations of boron carbide: stoichiometric (undoped), B-rich, and B/Si codoped boron carbides. For each generation of boron carbide, the crystal structure and microstructure are first discussed. Then, we outline the experimental observations of amorphization made by Raman spectroscopy and transmission electron microscopy. The susceptibility of amorphization in each generation of boron carbide will be compared and the fundamental mechanisms that explain the reduction in amorphization for B-rich and B/Si codoped boron carbides elucidated. Furthermore, comments on future research directions to further broaden and deepen the understanding of stress-induced amorphization of boron carbide are also provided.

36 MATERIALS SCIENCE↗

Applications of analytical electron microscopy to guide the design of boron carbide

Compositional analysis of boron carbide on nanometer length scales to examine or interpret atomic mechanisms, for example, solid-state amorphization or grain-boundary segregation, is challenging. This work reviews advancements in high-resolution microanalysis to characterize multiple generations of boron carbide. First, ζ-factor microanalysis will be introduced as a powerful (scanning) transmission electron microscopy ((S)TEM) analytical framework to accurately characterize boron carbide. Three case studies involving the application of ζ-factor microanalysis will then be presented: (1) accurate stoichiometry determination of B-doped boron carbide using ζ-factor microanalysis and electron energy loss spectroscopy, (2) normalized quantification of silicon grain-boundary segregation in Si-doped boron carbide, and (3) calibration of a scanning electron microscope X-ray energy-dispersive spectroscopy (XEDS) system to measure compositional homogeneity differences of B/Si-doped arc-melted boron carbides in the as-melted and annealed conditions. Overall, the improvement and application of advanced analytical tools have helped better understand processing–microstructure–property relationships and successfully manufacture high-performance ceramics.

36 MATERIALS SCIENCE↗

The effects of carbonaceous inclusions and their distributions on dynamic failure processes in boron carbide ceramics

Commercially available boron carbide ceramics typically have heterogeneous microstructures that contain distributions of processing-induced inclusions. The inclusions that are rich in carbon (i.e., carbonaceous) govern the underlying mechanisms of brittle fracture through wing crack formation, and thus dictate the mechanical response of the ceramic. In this study, we investigate the dynamic failure of five boron carbide ceramic materials with different inclusion populations. All of the materials were prepared by hot-pressing; four of these boron carbides contained different sizes and concentrations of carbonaceous inclusions, while one contained no carbonaceous inclusions. The heterogeneity distributions were characterized in some detail for statistical analysis using scanning electron microscopy and quantitative image analysis. A modified compression Kolsky bar setup with in situ ultra-high-speed microscopic imaging (10 million frames per second) was then used to study the influence of the inclusion distributions on the dynamic failure processes in these materials, at nominal high strain rates of 10 2 -10 3 s -1 . The in situ ultra-high-speed microscopy highlighted the link between micro and macroscale failure processes and demonstrated that the carbonaceous inclusions are indeed the preferential sites for nucleation of wing cracks, as previously hypothesized based on post-mortem observations. The relative orientation of an inclusion with respect to the compression axis was shown to affect the likelihood that it would participate in crack nucleation. In conclusion, all of the ceramics were also found to have orientation-dependent peak compressive stress, regardless of the presence of carbonaceous inclusions, suggesting that grain orientation distributions are also important.

36 MATERIALS SCIENCE↗

Synthesis and Thermal Oxidation Resistance of Boron-Rich Boron–Carbide Material

A boron-rich boron–carbide material (B4+δC) was synthesized by spark plasma sintering of a ball-milled mixture of high-purity boron powder and graphitic carbon at a pressure of 7 MPa and a temperature of 1930 °C. This high-pressure, high-temperature synthesized material was recovered and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, Vickers hardness measurements, and thermal oxidation studies. The X-ray diffraction studies revealed a single-phase rhombohedral structure (space group R-3m) with lattice parameters in hexagonal representation as a = 5.609 ± 0.007 Å and c = 12.082 ± 0.02 Å. The experimental lattice parameters result in a value of δ = 0.55, or the composition of the synthesized compound as B4.55C. The high-resolution scans of boron binding energy reveal the existence of a B-C bond at 188.5 eV. Raman spectroscopy reveals the existence of a 386 cm−1 vibrational mode representative of C-B-B linear chain formation due to excess boron in the lattice. The measured Vickers microhardness at a load of 200 gf shows a high hardness value of 33.8 ± 2.3 GPa. Thermal gravimetric studies on B4.55C were conducted at a temperature of 1300 °C in a compressed dry air environment, and its behavior is compared to other high-temperature ceramic materials such as high-entropy transition metal boride. The high neutron absorption cross section, high melting point, high mechanical strength, and thermal oxidation resistance make this material ideal for applications in extreme environments.

36 MATERIALS SCIENCE↗

Synthesis of boron-carbide aerogels

We present the synthesis of boron carbide aerogels utilizing nano-boron powder and resorcinol–formaldehyde (RF) organic aerogels as precursors. Monolithic aerogels were fabricated from suspensions of boron nanoparticles and RF via an organic sol-gel process, enabling effective distribution of boron in the gel network. The resulting gels underwent supercritical drying, thermal reduction, and subsequent heat treatment to yield boron carbide aerogels with densities ranging from 37 to 55 mg/cm³. By tuning the boron-to-carbon ratio, heat treatment temperature, and dwell time, surface areas up to 53 m²/g were obtained. X-ray diffraction analysis confirmed the formation of the boron carbide phase and detected the presence of residual carbon within the structure.

Materials science↗

Additive manufacturing process for producing aluminum-boron carbide metal matrix composites

A method for additive manufacturing of a composite object containing a bonded network of boron carbide particles and aluminum occupying spaces between boron carbide particles, the method comprising: (i) producing a porous preform constructed of boron carbide by an additive manufacturing process in which particles of boron carbide are bonded together; and (ii) infiltrating molten aluminum, at a temperature of 1000-1400° C., into pores of said porous preform to produce said composite object constructed of boron carbide particles within an aluminum matrix, wherein the boron carbide is present in the composite object in an amount of 30-70 wt. %. The resulting composite material is also herein described.

Cramer, Corson L.↗

Thermostructural evolution of boron carbide characterized using in-situ x-ray diffraction

Boron carbide, with a nominal stoichiometry of B 4 C, is a highly desired ceramic candidate for armor applications due to its high hardness derived from the complex crystal structure. However, stress-induced local amorphization can lead to failure and is a known challenge for this material which must be addressed for applications in ballistic environments. Understanding boron carbide's atomic structural behavior and bonding environment is critical in determining effective strategies to mitigate these issues. Here, in this work, the thermo-structural behavior of B 4 C has been studied in detail using a conical nozzle levitator system coupled with in-situ synchrotron X-ray diffraction. Lattice expansion and the resulting thermal expansion coefficients (CTEs) were determined from 25-2100 °C. Rietveld refinements showed anisotropic atomic displacement for each of the 4 unique sites as a function of temperature. An exceptionally large z-axis displacement for the boron chain center is linked to bond weakness and may be linked to faster expansion of the α 33 relative to α 11 CTEs. Thermally induced lattice changes can inform the use of boron carbide at elevated temperatures as well as help develop strategies for mitigating structural failure for armor applications.

36 MATERIALS SCIENCE↗

Ultrathick Boron Carbide Coatings for Nuclear Fusion Targets

Boron carbide is an attractive ablator for next-generation inertial confinement fusion (ICF) targets. Here we describe several aspects of our ongoing systematic studies of the deposition and processing of B 4 C coatings for ICF targets. We show that residual compressive stress in films can be reduced and the deposition rate increased by N-doping. Further, we also demonstrate successful Si substrate etching and surface polishing and discuss remaining challenges and offer potential solutions to the buildup of particulates in the deposition chamber during prolonged coating runs, control of nodular growth defects, and lateral nonuniformity of film properties for deposition conditions with relatively low target-to-substrate distances.

36 MATERIALS SCIENCE↗

High-rate magnetron sputter deposition of low-stress boron carbide films on tilted substrates

Boron carbide is attractive for several applications, including nuclear fuel capsules for inertial confinement fusion (ICF). The fabrication of ICF capsules involves the deposition of ultrathick coatings with density and thickness uniformity on submicron length scales on non-planar (spherical) substrates. Such a deposition requires control of the deposition rate, residual stress, and film microstructure. Here, we systematically study the direct-current magnetron sputter deposition of B 4 C coatings with a full-face-erosion magnetron source as a function of substrate tilt and Ar working gas pressure. Film properties are correlated with results of plasma diagnostics and predictions of Monte Carlo simulations of ballistic sputtering and gas-phase transport. The fabrication of low-stress amorphous B 4 C films with deposition rates of 7μm/h is demonstrated.

Kawasaki, K. [Lawrence Livermore National Laborato↗

Thermal stability of dopants in boron carbide

Undoped (B 4 C), B rich (B 5.5 C), and B/Si co-doped (Si-B 6.5 C) boron carbides were annealed at 500 °C for up to 21 days to investigate the thermal stability of primary dopants, B and Si. Structural changes associated with dedoping were investigated by X-ray diffraction (XRD) and Raman spectroscopy. The stable phase B 4 C showed no microstructural or lattice parameter changes. Similarly, lattice parameters of B 5.5 C remained constant, suggesting that B dopant is stable at the given conditions. However, the shortened lattice parameters and reduced Si content of Si-B 6.5 C over the annealing time indicated that Si dopant was in a metastable state at the annealing temperature. Consequently, Si dedoping led to an increase in amorphization (a loss of local crystalline order) which degrades the ballistic performance of boron carbide. The insight highlights the importance of Si dopant in boron carbide and suggests that rapid processing may be necessary to retain more silicon for better performance.

36 MATERIALS SCIENCE↗

Effect of electronic transitions on near edge optical properties of off-stoichiometric boron carbide thin films

In the present study, soft x-ray optical properties of off-stoichiometric boron carbide thin films are investigated, and the structure and chemical composition of the film is analyzed using angle dependent x-ray reflectivity and x-ray photoelectron spectroscopy techniques. Energy dependent soft x-ray reflectivity measured at a fixed grazing angle of 1.5° is used to determine the optical constants in the boron K edge region by applying the Kramers–Kronig technique. The measured optical constants show near edge fine features corresponding to σ* and π* resonances. Furthermore, the electronic transitions corresponding to σ* resonance cause a 40%–75% increase in the delta value in the above boron K edge region. The π* transitions corresponding to off-stoichiometric nature of the boron carbide are observed in the absorption spectra near ~ 192.7 eV. Details of the measured soft x-ray optical properties of the off-stoichiometric boron carbide thin film are discussed.

36 MATERIALS SCIENCE↗

Optimized Microwave Digestion and Quantification Procedure for Boron Carbide samples

A microwave-assisted HNO3-H2SO4-HF digestion system was explored/optimized for the total dissolution of Boron Carbide samples followed by multi-elemental determination using ICP-MS and ICP OES, in order to improve the methods used in a previous try using a microwave-assisted H2O2-HNO3-HF digestion system. The samples were microwave digested to accomplish complete dissolution needed to perform quantitative analysis of their metal content. Two Boron Carbide samples were provided to us: JM10 and JM11. The Boron Carbide samples were completely dissolved at the end of the optimized microwave digestion procedure that was developed. The digested samples were analyzed for metals mostly by ICP MS; few elements were analyzed by ICP-OES. Microwave digestion reactions were performed in a Titan MPS instrument (Perkin Elmer, USA). Titan MPS instrument is equipped with Temperature and Pressure regulations and controlled by software. Each microwave digestion batch contained the samples of interest along with a reagent blank and one certified standard (1632e) in order to (i) compensate for the contaminations present in the reagents, (ii) ensure that the digestion was complete and (iii) that there was a good recovery of all the constituents. The certified standard used (1632e) was provided with USGS certificates of analysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High-Rate Sputter Deposition of Ultrathick Boron Carbide Coatings on Rolling Spherical Substrates

Amorphous boron carbide (B 4 C) is a promising next-generation ablator material for inertial confinement fusion. However, the deposition of ultrathick B4C coatings with submicron-scale density uniformity on spherical substrates, as required for ablator shell fabrication, remains challenging. Here, in this study, we use direct current magnetron sputtering to deposit B 4 C onto 2-mm-diameter Si spheres rolling in a dish-shaped substrate holder. High deposition rates of ∼3 μm/h are achieved. Ultrathick films have a columnar microstructure, with the column width determined by the density of nodular defects. Nodular defect nucleation is dominated by the pickup of particulates from the holder during substrate rolling. We demonstrate the fabrication of a hollow B 4 C spherical shell with a wall thickness of 80 μm. Also demonstrated is the laser machining of holes in the B 4 C coating, which is necessary for both the chemical removal of the Si template and the attachment of a fusion fuel fill tube.

Inertial confinement fusion targets↗

Activating dislocation mediated plasticity in boron carbide through Al-doping

Dislocation slip, deformation twinning, phase transformations, and fast fracture are energy dissipation mechanisms that accommodate mechanical loading in materials. The energetically unfavorable formation of dislocation attributes to the ease of cracking and the low damage tolerance observed in superhard ceramics, notably boron carbide. Here, this work demonstrates that room temperature dislocation slip can be enabled in boron carbide by altering its chemistry through Al doping. The activation of dislocation slip is mechanistically explained by quantum mechanics simulations and electron microscopy, which indicate that strain energy is released through basal icosahedral slip facilitated by icosahedral rotation and chain bond breaking and reconfiguring. The new insight gained through this work suggests that atomic doping could be an effective strategy to tune deformation mechanisms in boron carbide, which provides a significant potential for limiting amorphization and catastrophic failure, and opens a new strategy to enhance damage tolerance in brittle ceramics.

36 MATERIALS SCIENCE↗

Direct ink writing of boron carbide monoliths

Direct ink writing – an extrusion-based additive manufacturing process – followed by pressureless sintering was investigated to produce boron carbide monoliths. The effects of ceramic powder loading and Pluronic binder concentration on the rheology of boron carbide pastes were studied and linked to both processing behaviour and final outcome in terms of sintered density and hardness. The effects of printing parameters, in particular orifice diameter and printing speed, were also investigated. Reducing the size of the extrusion nozzle from 584 μm to 406 μm led to significantly better shape retention, lower surface roughness, as well as higher density and hardness. A 203 μm printing orifice was also trialled but was unsuccessful due to faster drying kinetics that occurred with smaller ceramic struts resulting in rapid warping and nozzle clogging. Carbon-black – 8 wt% relative to B 4 C – acted as an effective sintering aid to increase both density and hardness. After optimisation of feedstock and printing parameters, few-layer samples (3–5 layers) had a density as high as ~ 97 % TD and a hardness of ~ 30 GPa. On the other hand, 18-layer specimens had a sintered density of ~ 87 % TD, despite a fully dense microstructure, due to the formation of a 3D array of inter-strut pores. Nevertheless, several issues that arose during manufacturing and post-processing were detrimental to the density and structural integrity of printed specimens; these issues were identified, discussed, and suggestions for future work are provided in this report.

36 MATERIALS SCIENCE↗

Effects of substrate bias and tilt on magnetron sputtered boron carbide films

Maintaining high density and good mechanical properties at oblique angles for magnetron sputtered amorphous boron carbide films remains a challenge. In this study, we investigate the effect of the substrate bias on density, residual stress, mechanical properties, and morphology of boron carbide films deposited via direct current magnetron sputtering with a full-face erosion magnetron source in a mixed Ar-Ne plasma. Results show that films deposited at oblique substrate tilt angles on substrates biased at -50 V possess significantly lower oxygen content, superior mechanical properties, and higher density compared to their electrically grounded counterparts. In conclusion, these enhancements observed at oblique angles, while promising, come at the cost of larger residual compressive stress and higher Ne incorporation in films.

Materials science↗

Boron carbide amorphous solid with tunable band gap

Boron carbide B x C (x = 1/6 – 10) powders were synthesized through a microwave-assisted carbothermic reduction reaction as a potential clean energy material. Their crystallographic structures and optical properties were characterized. X-ray diffraction and electron diffraction indicated that the synthesized B x C powders were amorphous. Electron energy-loss spectroscopy demonstrated that the composition of boron and carbon was in amorphous materials, and their chemical bonding were disclosed from Raman scattering spectroscopy. Here, UV-vis absorption spectroscopy indicated that the bandgap of the bulks varied from 2.30 eV to 3.90 eV, tuned by the boron/carbon element ratio.

36 MATERIALS SCIENCE↗