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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

High-frequency direct current bulk capacitors with interleaved busbar packages

Presented are electrical capacitors with interleaved busbar architectures, methods for making/operating such capacitors, and electric-drive vehicles equipped with such capacitors. A bulk capacitor includes multiple capacitor devices disposed within an outer housing and operable to modify electric current transmitted between a power source and an electrical load. An interleaved busbar package is interposed between the capacitor devices and outer housing. The interleaved busbar package includes a first busbar plate that electrically connects to first terminals of the capacitor devices and defines a busbar pocket. A second busbar plate is seated within the busbar pocket and electrically connects to second terminals of the capacitor devices. The second busbar plate includes a capacitor basin that seats therein the capacitor devices. An isolator sheet is interleaved between and electrically insulates the first and second busbar plates. The capacitor devices and interleaved busbar package may be partially submerged in an epoxy endfill composition.

42 ENGINEERING↗
DOE OSTI2020

Busbar Design and Optimization for Voltage Overshoot Mitigation of a Silicon Carbide High-Power Three-Phase T-Type Inverter

The silicon carbide (SiC) devices have faster switching speed than that of the conventional silicon (Si) devices, which however may cause excessive device voltage overshoot. Larger gate resistance can help to restrain the overshoot, it however slows down the switching speed and increases switching losses. There are other methods that can mitigate the voltage overshoot, e.g., using low-inductance busbars, adding snubber circuits, etc. In this article, the busbar design for a 250-kW SiC three-level T-type inverter is investigated. The current commutation loops (CCLs) are first analyzed using a single-phase equivalent circuit. Then the detailed busbar design methods, especially a 3-D busbar design concept, are proposed to select the optimal stacking order for the multilayer laminated busbar and to address constraints posed by the physical terminal arrangements of SiC modules and dc-link capacitors. The stray inductance in each CCL is extracted via a finite element analysis and validated on the actual inverter busbar prototypes using an impedance analyzer. To further minimize the busbar stray inductance, a hybrid busbar structure with printed circuit board based buffer circuit using high-frequency decoupling capacitors is designed and evaluated in this article. Lastly, the effectiveness of the designed busbars as well as the buffer circuit are validated using experimental studies.

42 ENGINEERING↗
DOE OSTI2020

Methodology of Low Inductance Busbar Design for Three-Level Converters

Three-level (3L) converters are more susceptible to parasitics compared with two-level converters because of their complicated structure with multiple switching loops. In this article, the methodology of busbar layout design for 3L converters based on the magnetic cancellation effect is presented. The methodology can fit for 3L converters with symmetric and asymmetric configurations. A detailed design example is provided for a high-power 3L-active neutral point clamped (ANPC) converter, which includes the module selection, busbar layout, and dc-link capacitor placement. The loop inductance of the busbar is verified with simulation, impedance measurements, and converter experiments. Furthermore, the results match with each other, and the inductances of short and long loops are 6.5 and 17.5 nH, respectively, which are significantly lower than the busbars of NPC-type converters in other references.

42 ENGINEERING↗
NASA NTRS2019

Design of Low Inductance Busbar for 500 kVA Three-Level ANPC Converter

The adoption of SiC devices in high power applications enables higher switching speed, which requires lower circuit parasitic inductance to reduce the voltage overshoot. This paper presents the design of a busbar for a 500 kVA three-level active natural clamped converter. The layout of the busbar is discussed in detail based on the analysis of the multiple commutation loops, magnetic cancelling effect, and DC-link capacitor placement. The loop inductance of the designed busbar is verified with simulation, impedance measurements and converter experiment. The results can match with each other and the inductances of small and large loop are 6.5 nH and 17.5 nH respectively, which is significantly lower than the busbars of NPC type converters in other references.

SiC MOSFET↗
DOE OSTI2019

Design of Low Inductance Busbar for 500 kVA Three-Level ANPC Converter

The adoption of SiC devices in high power applications enables higher switching speed, which requires lower circuit parasitic inductance to reduce the voltage overshoot. This paper presents the design of a busbar for a 500 kVA three-level active neutral point clamped (ANPC) converter. The layout of the busbar is discussed in detail based on the analysis of the multiple commutation loops, magnetic canceling effect, and DC-link capacitor placement. The loop inductance of the busbar is verified with simulation, impedance measurements, and converter experiments. The results match with each other, and the inductances of small and large loop are 6.5 nH and 17.5 nH respectively, which is significantly lower than the busbars of NPC type converters in other references.

Gui, Handong↗
DOE OSTI2024

Aluminum Ultra-conductors for Energy-Efficient Aerospace Busbar Applications (Abstract)

In this project, we will develop aluminum ultra-conductors with graphene additives demonstrating enhanced electrical conductivity at 90 °C compared to electric grade aluminum alloy AA1100 (43% IACS at 90 °C). While ultra-conductivity has been developed in copper and copper alloys, it is yet to be reported extensively in aluminum-based materials. This project will scale initial work done at PNNL on aluminum ultra-conductors using shear-assisted processing and extrusion (ShAPETM), a novel solid phase processing technique. Ultra-conductors are an emerging class of composites, comprised of a metal substrate with small quantities of nanocrystalline additives such as graphene or carbon nanotubes that demonstrate enhanced conductivity at relevant operating temperatures. Aluminum ultra-conductors can improve efficiency and power density while reducing the demand for copper in a wide range of applications, such as power transmission cables and electric motors. Busbars are an important component in aerospace systems that require lightweight and high-current power distribution including both future electric vertical take-off and landing (eVTOL) aircrafts and current aircraft electrical systems. We will accelerate aluminum ultra-conductor composite formulation development using combinatorial synthesis and testing methods aided by process/microstructure modeling, developed previously at PNNL. Eaton will test the properties of the ShAPE aluminum ultra-conductor feedstock (used to make the busbars) in relevant operating conditions (20 – 90 °C), predict the improvement in busbar performance when manufactured with ultra-conductors over commercial conductors (such as AA1100), and perform technoeconomic analysis to evaluate the potential for commercialization of ShAPE aluminum ultra-conductors. The project is expected to have a budget of $\$375$K, with $\$300$K in federal funding and $\$75$K in-kind cost-share contribution from Eaton over a period of performance of 24 months. Of the $\$300$K of federal funds, $\$140$K is allocated for CRADA activities that generate intellectual property (IP), and the remaining $\$160$K is reserved for modeling, material testing, characterization, travel, and reporting-related activities.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules

We study photovoltaic (PV) module degradation after extended accelerated stress testing including 2000 hours of damp heat followed by a current-injection procedure meant to stabilize defects linked to light-induced degradation. In addition to de-stabilization/recovery of light-induced defects, we observe severe series resistance due to loss of contact between the Si cell and near-busbar screen-printed metallization (i.e. grid finger delamination). Using scanning electron microscopy and energy dispersive x-ray spectroscopy on cell fragments cored from the module, we show poor contact is caused by a gap between the screen-printed Ag metallization and Si due to missing glass frit.

degradation↗
DOE OSTI2020

Characterization of NbTi busbar for HL LHC Interaction Region Quadrupoles

The US Accelerator Upgrade for the HiLumi-LHC (US-HL-LHC AUP) project and CERN are designing and fabricating superconducting quadrupole magnets for the interaction regions of the High Luminosity Large Hadron Collider (HLLHC). The triplet is made of three optical elements: Q1, Q2, and Q3. The Nb3Sn quadrupole magnets operate in superfluid He at 1.9 K with a nominal field gradient of 132.6 T/m. The three inner triplet elements are connected together with superconducting buses. The design and fabrication of the through and local buses is carried out at Applied Physics and Superconducting Technology Division (APS-TD) at Fermilab (FNAL). This paper reports the characterization of the bus-bar thermoelectric properties. The bus was tested with a short Nb3Sn magnet (MQXFS1e) in the vertical test facility of the APS-TD at FNAL. The test demonstrated that the bus design is adequate since no spontaneous quench took place up to 17.87 kA current value. Quench propagation velocities were investigated over a range of currents that is typical for accelerator superconducting magnets. Temperature margins were found above that required for the Hi- Lumi triplet bus. The design guarantees the protection of the bus at operational current value according to the quench detection voltage threshold (100 mV) established for the Hi-Lumi LHC interaction region.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Double-sided cooling cold plates with overhanging heat sinks and through body busbar for high-power density power electronics

A double-sided cold plate includes a manifold comprising openings extending from a first surface of the manifold through the manifold to a second surface of the manifold forming recesses within the manifold and an inlet channel and an outlet channel fluidly coupled to the recesses within the manifold, a plurality of first heat sinks coupled to the first surface of the manifold enclosing the openings on the first surface, and a plurality of second heat sinks positioned adjacent each other along a length of the manifold and coupled to the second surface of the manifold, enclosing the openings on the second surface, a width of the plurality of second heat sinks is greater than a width of the manifold thereby forming an overhanging portion on each lengthwise side of the manifold, the overhanging portion configured to mechanically support a plurality of electrical components positioned around a perimeter of the manifold.

Zhou, Feng↗
DOE OSTI2020

Estimation, Minimization, and Validation of Commutation Loop Inductance for a 135-kW SiC EV Traction Inverter

With growing interests in low inductance SiC based power module packaging, it is vital to focus on system level design aspects to facilitate easy integration of the modules and reap system level benefits. To effectively utilize the low inductance modules, busbar and interconnects should also be designed with low stray inductances. A wholistic investigation of the flux path and flux cancellations in the module-busbar assembly which as differentially coupled series inductors is thus mandatory for a system level design. This work presents a busbar design which can be adopted to effectively integrate the CREE’s low inductance 1.2 kV/1.7 kV SiC power modules. The paper also proposes a novel measurement technique to measure the inductance of the modulebusbar assembly as a whole rather than deducing it from individual components. The inductance of the overall commutation loop of the inverter which encompasses the SiC power module, interconnects and PCB busbar have been estimated using finite element analysis (FEA). Furthermore, insights gained from FEA provided the guidelines to decide on the placement of the decoupling capacitors in the busbar to minimize the overall commutation loop inductance from 12.8 nH to 7.4 nH which resulted in significant reduction in the device voltage overshoot. The simulation results have been validated through measurements using an impedance analyzer with less than 5% difference between extracted loop inductance from FEA and measurements. The bus bar design study and the measurement technique discussed in this paper, can be easily extended to other power module packages. Finally, the 135 kW inverter has been compared to a similar highpower inverter utilizing a laminated busbar to highlight the performance of the former.

42 ENGINEERING↗
NASA NTRS1985

An optimized top contact design for solar cell concentrators

A new grid optimization scheme is developed for point focus solar cell concentrators which employs a separated grid and busbar concept. Ideally, grid lines act as the primary current collectors and receive all of the current from the semiconductor region. Busbars are the secondary collectors which pick up current from the grids and carry it out of the active region of the solar cell. This separation of functions leads to a multithickness metallization design, where the busbars are made larger in cross section than the grids. This enables the busbars to carry more current per unit area of shading, which is advantageous under high solar concentration where large current densities are generated. Optimized grid patterns using this multilayer concept can provide a 1.6 to 20 percent increase in output power efficiency over optimized single thickness grids.

Desalvo, Gregory C.↗
DOE OSTI2020

Generalized and Mechanistic PV Module Performance Prediction From Computer Vision and Machine Learning on Electroluminescence Images

Electroluminescence (EL) imaging of photovoltiac (PV) modules offers high-speed, high-resolution information about device performance, affording opportunities for greater insight and efficiency in module characterization across manufacturing, research and development, and power plant operations and management. Predicting module electrical properties from EL image features is a critical step toward these applications. In this article, we demonstrate quantification of both generalized and performance mechanism-specific EL image features, using pixel intensity-based and machine learning classification algorithms. From EL image features, we build predictive models for PV module power and series resistance, using time-series current-voltage (I-V) and EL data obtained stepwise on five brands of modules spanning three Si cell types through two accelerated exposures: damp heat (DH) (85°C/85% RH) and thermal cycling (TC) (IEC 61215). Overall, 195 pairs of EL images and I-V characteristics were analyzed, yielding 11700 individual PV cell images. A convolutional neural network was built to classify cells by the severity of busbar corrosion with high accuracy (95%). Generalized power predictive models estimated the maximum power of PV modules from EL images with high confidence and an adjusted-R 2 of 0.88, across all module brands and cell types in extended DH and TC exposures. Mechanistic degradation prediction was demonstrated by quantification of busbar corrosion in EL images of three module brands in DH, and subsequent modeling of series resistance using these mechanism-specific EL image features. For modules exhibiting busbar corrosion, we demonstrated series resistance predictive models with adjusted-R 2 of up to 0.73.

14 SOLAR ENERGY↗
DOE OSTI2020

Detection and Localization of Damaged Photovoltaic Cells and Modules Using Spread Spectrum Time Domain Reflectometry

The operating efficiency of photovoltaic (PV) plants can be improved if damaged or degraded modules can be detected and identified. Currently, string-level power electronics can detect problems with modules or cabling but not locate them, which would facilitate addressing these issues. Here, we investigate the ability of spread spectrum time domain reflectometry (SSTDR) to both detect and locate/identify damaged cells and modules within a series-connected PV string. We tested the ability of SSTDR to detect and locate single-cell mini-modules and full-sized PV modules, which were intentionally damaged by impacts with a hammer (breaking the glass and damaging the silicon below) or by cutting through some or all busbars. Damage to the glass and silicon of cells was detected and located within a small string of minimodules. Busbar damage was detectable only if an open was created by cutting through all intercell busbars. Furthermore, physical impact damage to the glass and silicon of a full-sized PV module could be detected, but further development of signal processing is needed to achieve localization of such damaged modules within a string.

14 SOLAR ENERGY↗
DOE OSTI2024

Analyzing the impact of design factors on solar module thermomechanical durability using interpretable machine learning techniques

Solar modules in utility-scale systems are expected to maintain decades of lifetime to rival conventional energy sources. However, cyclic thermomechanical loading often degrades their long-term performance, highlighting the importance of effective design to mitigate thermal expansion mismatches between module materials. Given the complex composition of solar modules, isolating the impact of individual components on overall durability remains a challenging task. In this work, we analyze a comprehensive data set that comprises bill-of-materials (BOM) and thermal cycling power loss from 251 distinct module designs to identify the predominant design factors and their impacts on the thermomechanical durability of modules. The methodology of our analysis combines machine learning modeling (random forest) and Shapley additive explanation (SHAP) to correlate design factors with power loss and interpret the model’s decision-making. The interpretation reveals that silicon type (monocrystalline or polycrystalline), encapsulant thickness, busbar numbers, and wafer thickness predominantly influence the degradation. With lower power loss of around 0.6% on average in the SHAP analysis, monocrystalline cells present better durability than polycrystalline cells. This finding is further substantiated by statistical testing on our raw data set. The SHAP analysis also demonstrates that while thicker encapsulants lead to reduced power loss, further increasing their thickness over around 0.6 to 0.7 mm does not yield additional benefits, particularly for the front side one. In addition, other important BOM features such as the number of busbars are analyzed. This study provides a blueprint for utilizing explainable machine learning techniques in a complex material system and can potentially guide future research on optimizing the design of solar modules.

14 SOLAR ENERGY↗
DOE OSTI2022

Analysis of electrically conductive adhesives in shingled solar modules by X-ray imaging techniques

The failure mechanisms of electrically conductive adhesives (ECAs) in solar modules are difficult to study since the ECA layer is not easily accessible within the module package. In this work, we present two complementary imaging modalities—X-ray radiography and X-ray microcomputed tomography (XCT)—that reveal important morphological features of the ECA within a shingled module. X-ray radiography uses single X-ray projections to provide fast and non-destructive imaging of the shingled interconnection, illuminating the alignment of the ECA relative to the busbars, the size and shape of the ECA, and the presence of voids within it. Through X-ray radiography, we observed, for example, that the average void coverage area of ECA segments reduced from 36.7% to 4.4% when an ECA was cured for 60 s prior to module lamination. XCT is a three-dimensional imaging technique that can identify regions in which the ECA makes electrical contact to busbars on cells and regions in which the ECA has cracked, among other features. XCT can also be used to image the individual metal particles within ECA, from which the metal volume fraction of an ECA was found here to be 70.4%. This is a quantity that is not often reported by ECA manufacturers but is important to ensure isotropic conduction. As X-ray projections can be performed non-destructively on full modules, the technique may be used to pinpoint ECA failures in accelerated degradation testing. XCT is complementary and is suited to forensic analysis of failing modules.

14 SOLAR ENERGY↗
DOE OSTI2020

Hardware Design and Demonstration of a 100kW, 99% Efficiency Dual Active Half Bridge Converter Based on 1700V SiC Power MOSFET

High efficiency, high density and galvanically isolated power converters are attractive for numerous medium voltage high power applications. This paper presents a 1.5kVdc, 100kW bidirectional Dual Active Half Bridge (DAHB) using newly developed 1.7kV SiC MOSFET modules. The DAHB achieved an efficiency of 98.6% at full load of 100kW and a maximum of 99% at 45kW, operating as an isolated DC/DC converter. The converter also achieved an efficiency of 97.8% operating as an isolated DC/AC inverter. An optimized PCB-based busbar design has significantly reduced the voltage overshoot across the device, making the design suitable for 1500Vdc input application such as 1500V PV inverters. Typical partial discharge inception voltage (PDIV) of the optimized PCB busbar is 1.7kVpeak with total charge <10pC. The power density of the DAHB converter is 1.8MVA/m 3 which is much higher than traditional two-stage industry products. The DAHB converter can be used as a building block for a 4.16kV/1MVA utility scale PV systems with input parallel and output series configuration.

Xu, Wei↗
DOE OSTI2020

Design of 1500V/200kW 99.6% Efficiency Dual Active Bridge Converters Based on 1700V SiC Power MOSFET Module

High efficiency, high density and galvanically isolated power converters are attractive for medium voltage high power applications. This paper presents a 1.5kV/200kW bidirectional Dual Active Bridge (DAB) converter using a newly developed 1.7kV SiC MOSFET module. The intended application is megawatt scale solid state transformer (SST) and 1500V PV inverter application using modular architecture. One novel model to estimate the turn-off loss using snubber capacitors is proposed and experimentally verified. An optimized PCB-based busbar design is introduced to reduce the voltage overshoot across the SiC device, making the design suitable for 1.5kVdc applications. The mechanism of how the optimized PCB-based busbar can reduce the voltage overshoot is quantitatively interpreted and experimentally verified. The DAB converter achieved an efficiency of 98.85% at 200kW and a maximum of 99.53% at 60kW. The maximum efficiency for series-resonant mode is 99.6% at 85kW and 99.3% at 200kW. The power density is 26W/inch3 (1.6MW/m3) which is much higher than traditional industry products.

Xu, Wei↗