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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Failure analysis of field-failed bypass diodes

Defective bypass diodes are often found as the largest factor leading to power loss in solar modules. Here, we report on failure mechanisms by investigating shunted bypass diodes from a rooftop installation, using a combination of multiple characterizations including current–voltage analysis, thermal-runaway testing, X-ray computed tomography, lock-in thermography, focused ion-beam cross-section imaging, chemical decapsulation, optical microscopy, and scanning electron microscopy with energy-dispersive X-ray spectroscopy. Differing from static discharge typically associated with lightning strikes on modules, we found diode failure by the mechanism of thermal damage under continuous, long-term overstress in forward bias. Our conclusion is based on evidence of energy dissipated—the small to medium extent of melt-through on the Schottky diode face. The diode failure shows distortions or roughening of the Schottky diode metal-semiconductor interface with the die attach, and some failures are accompanied by die-attach solder melting. We propose that nonuniform irradiance on the modules caused diode shunting due to extended periods of heat dissipation in the modules, because modules in this string were placed in two different orientations. In contrast, a second parallel module string of the same module type on the same rooftop with a unique plane of array did not show any diode failures. The thermal damage failure of melt-through was caused by the long-term current generated by overstressing of diodes that may have had crystalline and impurity defects.

14 SOLAR ENERGY↗
NASA NTRS1981

Bypass diode integration

Protective bypass diodes and mounting configurations which are applicable for use with photovoltaic modules having power dissipation requirements in the 5 to 50 watt range were investigated. Using PN silicon and Schottky diode characterization data on packaged diodes and diode chips, typical diodes were selected as representative for each range of current carrying capacity, an appropriate heat dissipating mounting concept along with its environmental enclosure was defined, and a thermal analysis relating junction temperature as a function of power dissipation was performed. In addition, the heat dissipating mounting device dimensions were varied to determine the effect on junction temperature. The results of the analysis are presented as a set of curves indicating junction temperature as a function of power dissipation for each diode package.

Shepard, N. F., Jr.↗
NASA NTRS1984

The integration of bypass diodes with terrestrial photovoltaic modules and arrays

Bypass diodes are often required to limit the potential for reverse voltage 'hot-spot' heating in high voltage arrays or in arrays that undergo periodic operation near the short-circuit point. In addition, when properly applied, bypass diodes can minimize the effect of shadowing and various internal module failures on the array energy output. This paper discusses the mechanical and electrical integration of bypass diodes beginning with the array-level considerations which influence the selection of an implementation approach. Concepts for the mounting of these diodes, both internally within the module encapsulant and externally to the exposed rear surface of the module, are described. Factors affecting the reliability of bypass diodes, including the control of junction temperature through adequate heat sinking and the derating of reverse voltage, are discussed.

Shepard, N. F., Jr.↗
NASA NTRS1983

Photovoltaic module bypass diode encapsulation

The design and processing techniques necessary to incorporate bypass diodes within the module encapsulant are presented. The Semicon PN junction diode cells were selected. Diode junction to heat spreader thermal resistance measurements, performed on a variety of mounted diode chip types and sizes, have yielded values which are consistently below 1 deg C per watt, but show some instability when thermally cycled over the temperature range from -40 to 150 deg C. Three representative experimental modules, each incorporating integral bypass diode/heat spreader assemblies of various sizes, were designed. Thermal testing of these modules enabled the formulation of a recommended heat spreader plate sizing relationship. The production cost of three encapsulated bypass diode/heat spreader assemblies were compared with similarly rated externally mounted packaged diodes. It is concluded that, when proper designed and installed, these bypass diode devices will improve the overall reliability of a terrestrial array over a 20 year design lifetime.

Shepard, N. J., Jr.↗
NASA NTRS1983

Design and selection of bypass diodes

Topics concerning the design and use of bypass diodes are investigated. Energy output, service life, safety, cell mounting approach, thermal capability, and cost analysis are also considered.

Shepard, N. F., Jr.↗
NASA NTRS2016

Bypass Diode Temperature Tests of a Solar Array Coupon Under Space Thermal Environment Conditions

Tests were performed on a 56-cell Advanced Triple Junction solar array coupon whose purpose was to determine margin available for bypass diodes integrated with new, large multi-junction solar cells that are manufactured from a 4-inch wafer. The tests were performed under high vacuum with coupon back side thermal conditions of both cold and ambient. The bypass diodes were subjected to a sequence of increasing discrete current steps from 0 Amp to 2.0 Amp in steps of 0.25 Amp. At each current step, a temperature measurement was obtained via remote viewing by an infrared camera. This paper discusses the experimental methodology, experiment results, and the thermal model.

Wright, Kenneth H., Jr.↗
NASA NTRS1985

Development of design criteria and qualification tests for bypass diodes in photovoltaic applications

Design criteria have been developed for bypass diodes in p-n and Schottky barrier in photovoltaic applications. A test method for assessing conformity to the design criteria is described. Junction temperatures are defined in terms of expected worst-case field conditions, including ambient temperature and solar irradiance on the photovoltaic module. The rating criteria address the maximum allowable current and heat-sink characteristics of diodes mounted inside or outside the photovoltaic module. The method establishes worst-case module-to-diode thermal interfaces and may be adapted for laboratory or field-site experiments. A list of the design criteria is given.

Otth, D. H.↗
NASA NTRS1991

Integral bypass diodes in an amorphous silicon alloy photovoltaic module

Thin-film, tandem-junction, amorphous silicon (a-Si) photovoltaic modules were constructed in which a part of the a-Si alloy cell material is used to form bypass protection diodes. This integral design circumvents the need for incorporating external, conventional diodes, thus simplifying the manufacturing process and reducing module weight.

Hanak, J. J.↗
DOE OSTI2021

Designing Modules to Prevent Reverse Bias Degradation in Perovskite Solar Cells when Partial Shading Occurs

When a solar cell in a panel is shaded, the illuminated cells can place a large reverse bias on the shaded cell to attempt to force current through it. Although the panel can continue to produce power, the reverse bias can cause significant problems for the shaded cell. In the case of perovskite solar modules, Joule heating and irreversible electrochemical reactions will degrade the cell. Some photovoltaic technologies use bypass diodes to solve this problem. To prevent both a perovskite cell and an all-perovskite tandem cell from falling into reverse bias breakdown while shaded, no more than two cells per bypass diode are allowed, which is likely to be prohibitively expensive for many applications. Herein, how many solar cells can be protected by one bypass diode in single-junction and multijunction perovskite modules is explored. It is easier to incorporate bypass diodes into modules with singulated cells than with monolithic panels. It is shown that perovskite–silicon tandems can be protected with fewer bypass diodes than with single-junction perovskite modules. Furthermore, it is suggested that if bypass diodes cannot be feasibly incorporated, then the panels should be deployed in utility-scale power plants.

14 SOLAR ENERGY↗
DOE OSTI2021

Influence of the Bulk Resistivity on Silicon Heterojunction Solar Cells and Module Reliability

Recent developments in industry on surface passivation open the possibility of using less doped substrates in silicon solar cells. In this report we investigate how the bulk resistivity affects the performance of silicon cells and the reliability of modules. Herein, n- and p-type silicon heterojunction cells with bulk resistivities between 3 and 15 000 Ωcm are studied. We measure the current–voltage characteristics of n-type cells across the resistivity range, and we find comparable responses to illumination intensities between 0.1 and 1 suns. The cells with bulk resistivities over 1000 Ωcm show breakdown voltages larger than -1000 V, almost two orders of magnitude higher than in typical commercial cells. Although modules have bypass-diodes to prevent cells from going into breakdown, higher breakdown voltages can improve the reliability of modules in case of bypass-diode failure and reduce the module cost by easing the number of bypass-diodes required. Finally, the cells have been submitted to light soaking. The float-zone p-type cells with bulk resistivities over 10 000 Ωcm are less sensitive to light-induced degradation than cells with bulk resistivities below 10 Ωcm. The former show to recover few hours after light soaking, while the latter recover only after dark annealing.

14 SOLAR ENERGY↗
NASA NTRS2016

By-Pass Diode Temperature Tests of a Solar Array Coupon Under Space Thermal Environment Conditions

Tests were performed on a 56-cell Advanced Triple Junction solar array coupon whose purpose was to determine margin available for bypass diodes integrated with new, large multi-junction solar cells that are manufactured from a 4-inch wafer. The tests were performed under high vacuum with cold and ambient coupon back-side. The bypass diodes were subjected to a sequence of increasing discrete current steps from 0 Amp to 2.0 Amp in steps of 0.25 Amp. At each current step, a temperature measurement was obtained via remote viewing by an infrared camera. This paper discusses the experimental methodology, including the calibration of the thermal imaging system, and the results.

Wright, Kenneth H., Jr.↗
NASA NTRS2018

Insights into Space Solar Cell Durability Using SPICE Simulation Seeded by Current-Voltage Characteristics Parametrized Using the Lambert W Special Function

We developed and validated an automated routine for the fitting of I-V curve data to the single diode model according to an exact analytical solution. Our fitting routine was validated to show good noise immunity and high accuracy usingsimulated values from LTSPICE. We are thus able to automate parameter extraction from a dataset or arbitrary size. This parameterization allows for better simulation of performance of real cells and arrays and provides utility for a host of applications relevant to space arrays. We will use this methodology to determine the array performance of radiated cells over time, and simulate the performance of the arrays with bypass diodes and power electronics.

Solar Cell↗
DOE OSTI2021

Standards development for modules in high temperature micro-environments

Photovoltaic (PV) module qualification standards, IEC 61215 and IEC 61730, were designed to apply to “general open-air climates” and IEC 61730 specifically indicated applicability of ambient air temperature of 40°C. Additionally, these standards provided allowances for so-called “open rack mounted PV modules” without a clear definition of “open-rack.” These implied restrictions and allowances meant that hotter climates or thermally restrictive installation methods may not be covered by these often customer-mandated certification standards. This is particularly salient for the significant growth regions of the Middle East and India that would be expected to operate at significantly higher temperatures. The applicability of these documents raised issues over the definition of “open rack” and the fact that the geographic location is just as important as the mounting configuration in assessing the impact of the micro-environment of a PV module. This work summarizes the scientific background for IEC Technical Specification 63126:2020 ED1, titled “Guidelines for qualifying PV modules components and materials for operation at high temperatures.” This standard was recently published by the IEC and is the first step in a systematic effort to rework these standards to address the question of temperature more directly. Instead of specifying a mounting condition, we specify different suites of tests suitable for a system (PV module, mounting style, and location) defined by the 98th percentile cell temperature. With a defined temperature regime to work from, this allowed us to use existing literature research combined with additional modeling work to determine, which tests would need to be modified. This resulted in suggested changes to material thermal indices, thermal cycling temperatures, hot spot testing, ultraviolet testing, and bypass diode testing among other tests and characteristics described in this study.

14 SOLAR ENERGY↗
DOE OSTI2022

Optimal interconnection of three-terminal tandem solar cells

Three-terminal (3T) tandem solar cells require an adapted module integration scheme in order to explore their full efficiency potential. The three terminals allow to extract the power of the top and bottom cell separately. In a cell string, the wide bandgap top cells are interconnected in parallel to multiple bottom cells resulting in a parallel/series interconnection. This interconnection scheme affects the operation of the subcells, the resulting current path between the subcells, the layout of the cell interconnects, and the system level. Here, we analyze by simulations and experiments the aspects of the module integration of series- and reverse-connected 3T cells with their practical impact on module processes and performance as well as the effect of varying voltage ratios on the string-end losses. If the subcells are connected in series, the module integration requires insulation layers and significantly longer interconnects compared to devices with reverse-connected subcells. Tandem devices with a reverse connection and a voltage ratio between top and bottom cell of 2:1 allow a lean interconnection design and low integration losses. Here, we present an approach for the integration of bypass diodes for the protection against shading effects that allow to minimize string-end and shading losses for a system of modules featuring 3T cells.

14 SOLAR ENERGY↗
DOE OSTI2024

A thermotropic liquid crystal enables efficient and stable perovskite solar modules

Perovskite solar cells have seen impressive progress in performance and stability, yet maintaining efficiency while scaling area remains a challenge. Here we find that additives commonly used to passivate large-area perovskite films often co-precipitate during perovskite crystallization and aggregate at interfaces, contributing to defects and to spatial inhomogeneity. Here we develop design criteria for additives to prevent their evaporative precipitation and enable uniform passivation of defects. We explored liquid crystals with melting point below the perovskite processing temperature, functionalization for defect passivation and hydrophobicity to improve device stability. We find that thermotropic liquid crystals such as 3,4,5-trifluoro-4'-(trans-4-propylcyclohexyl)biphenyl enable large-area perovskite films that are uniform, low in defects and stable against environmental stress factors. We demonstrate modules with a certified stabilized efficiency of 21.1% at an aperture area of 31 cm 2 and enhanced stability under damp-heat conditions (ISOS-D-3, 85% relative humidity, 85 °C) with T 86 (the duration for the efficiency to decay to 86% of the initial value) of 1,200 h, and reverse bias with (ISOS-V-1, negative maximum-power-point voltage) and without bypass diodes.

14 SOLAR ENERGY↗
DOE OSTI2020

Destructive reverse bias pinning in perovskite/silicon tandem solar modules caused by perovskite hysteresis under dynamic shading

In this work, we demonstrate how perovskite hysteresis can result in permanent reductions in power output in perovskite/silicon tandem modules—including irreversible hotspot-induced damage—from only brief periods of shading. We show that reverse bias events in which a perovskite cell is biased above a threshold voltage—which in this work we find to be as low as –1.1 V—produces a temporary reduction in power output that is of sufficient magnitude to keep the cell pinned in reverse bias after the shading event ends. As a hysteretic phenomena, this crucial failure mode may be overlooked by static models of perovskite-based solar cells. Higher reverse bias voltages exacerbate the temporary reduction in short-circuit photocurrent, which is also sensitive to the level of illumination under reverse bias. Numerical device modelling demonstrates that this effect is consistent with our understanding of perovskite hysteresis as a consequence of mobile ion-electron coupling controlling rates of non-radiative recombination over time. Measurements of the dynamic response of single-junction perovskite cells are extrapolated to two-terminal and four-terminal perovskite/silicon tandem module modelling. We validate these models with measurements from an equivalent electronic circuit that represents a two-terminal perovskite–silicon tandem mini module. Two module-level solutions are discussed that address this issue, which includes increasing the number of bypass diodes and choosing better suited silicon bottom cells with higher shunter resistance in two-terminal tandem modules.

14 SOLAR ENERGY↗
DOE OSTI2020

An Overview of Spread Spectrum Time Domain Reflectometry Responses to Photovoltaic Faults

Spread spectrum time domain reflectometry (SSTDR) is a broadband electrical reflectometry technique that has been used to detect and locate faults on live electrical systems, including photovoltaic systems. In this article, we evaluate the detectability and localizability from both existing literature and our own measurements using SSTDR of open-circuit faults, connection faults, short-circuit faults, ground faults, arc faults, shading faults, bypass diode faults, and accelerated degradation faults in PV cells and mini-modules. Additionally, reflection magnitudes for these faults are compared. Herein, preliminary data on buried and grounded PV cable along with arc fault detection are presented.

14 SOLAR ENERGY↗