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Results for “cavity magnetrons”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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5 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Vibration Method for Tracking the Resonant Mode and Impedance of a Microwave Cavity

A vibration technique his been developed to continuously maintain mode resonance and impedance much between a constant frequency magnetron source and resonant cavity. This method uses a vibrating metal rod to modulate the volume of the cavity in a manner equivalent to modulating an adjustable plunger. A similar vibrating metal rod attached to a stub tuner modulates the waveguide volume between the source and cavity. A phase sensitive detection scheme determines the optimum position of the adjustable plunger and stub turner during processing. The improved power transfer during the heating of a 99.8% pure alumina rod was demonstrated using this new technique. Temperature-time and reflected power-time heating curves are presented for the cases of no tracking, impedance tracker only, mode tracker only and simultaneous impedance and mode tracking. Controlled internal melting of an alumina rod near 2000 C using both tracking units was also demonstrated.

Barmatz, M.↗
NASA NTRS1994

(abstract) Vibration Method for Tracking the Resonant Mode and Impedance of a Microwave Cavity

We have developed a vibration technique to continuously maintain mode resonance and impedance match between a constant frequency magnetron source and resonant cavity. This method uses a vibrating metal rod to modulate the volume of the cavity that is equivalent to modulating an adjustable plunger. A similar vibrating metal rod attached to a stub tuner modulates the waveguide volume between the source and cavity. A phase sensitive detection scheme determines the optimum position of the adjustable plunger and stub tuner. The improved power transfer during the heating of a 99.8% pure alumina rod was demonstrated using this new technique. Temperature-time and reflected power-time plotswill be presented for the cases of no tracking, impedance tracker only, mode tracker only, and simultaneous impedance and mode tracking. Internal melting of the alumina rod near 2000°C with both trackers on will also be discussed.

microwave↗
NASA NTRS1995

Vibration Method for Tracking the Resonant Mode and Impedance of a Microwave Cavity

There has been a concerted effort to improve the microwave heating technique for processing materials at high temperature. Improved optimization of the energy transfer from a microwave source to the material being processed is required. A vibration technique is pre- sented to continuously maintain a mode resonance and impedance match between a constant frequency magnetron source and a resonant cavity.

microwave↗
NASA NTRS1969

Magnetron tuner has locking feature

Magnetron tuning arrangement features a means of moving a tuning ring axially within an anode cavity by a system of reduction gears engaging a threaded tuning shaft of lead screw. The shaft positions the tuning ring for the desired magnetron output frequency, and a washer prevents backlash.

Martucci, V. J.↗
NASA NTRS2019

Molten Target Sputtering: Non-Conventional Method for High Mobility Si0.15Ge0.85 Growth at 500°C

Since electrons travel over 100 times faster in Silicon-Germanium (SiGe) than in pure Si due to the low effective masses associated with Ge and SiGe-based devices continue to replace Si-based solid-state electronic devices. SiGe thin film on sapphire was successfully grown at 890°C, using a magnetron sputtering system within heteroepitaxial framework. However, SiGe growth at 890oC is a costly and difficult process to produce as a uniform wafer for semiconductor device manufacturing due to thermal soak times, and geometric thermal shadowing from the wafer holder. To leverage the semiconducting capabilities of SiGe, novel processing techniques for SiGe film growth with decreased thermal loading are required. This paper introduces the Molten Target Sputtering (MTS) method that produces high mobility SiGe on sapphire below 500°C. This non-conventional method has the advantage of high kinetic energy, high-energy latency, and high flux density of sputtered atoms by combining benefits of both magnetron sputtering and thermal evaporation. For the MTS method, a 1~2 mm (depth and width) ring-shaped groove was cut between the center magnet and surrounded by electromagnets creating a circular cavity between the copper plate and source target materials that melt the target material. The SiGe grown from the MTS shows continuous morphology and 99.7% single crystal Si0.15Ge0.85 films. The Hall electron mobilities of the Si0.15Ge0.85 are 456 sq. cmV(exp -1)s(exp -1) and 123.9 sq. cmV(exp -1)s(exp -1) at 5.59 x 10(exp 18) cubic cm and 3.5 x 10(exp 20) cubic cm carrier concentration at 22.38°C, respectively. This is approximately 5.5 times higher than that of Si and similar to the Ge value at equivalent carrier concentrations and temperatures.

High mobility SiGe↗