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NASA NTRS2006

Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same

A single source precursor for depositing ternary I-III-VI.sub.2 chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI.sub.2 stoichiometry built into a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VI.sub.2 ternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500.degree. C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.

Banger, Kulbinder K.↗

NASA NTRS2003

Nanocrystalline Chalcopyrite Materials (CuInS2 and CuInSe2) via Low-Temperature Pyrolysis of Molecular Single-Source Precursors

Nanometer sized particles of the chalcopyrite compounds CuInS2 and CuInSe2 were synthesized by thermal decomposition of molecular single-source precursors (PPh3)2CuIn(SEt)4 and (PPh3)2CuIn(SePh)4, respectively, in the non-coordinating solvent dioctyl phthalate at temperatures between 200 and 300 C. The nanoparticles range in size from 3 - 30 nm and are aggregated to form roughly spherical clusters of about 500 nm in diameter. X-ray diffraction of the nanoparticle powders shows greatly broadened lines indicative of very small particle sizes, which is confirmed by TEM. Peaks present in the XRD can be indexed to reference patterns for the respective chalcopyrite compounds. Optical spectroscopy and elemental analysis by energy dispersive spectroscopy support the identification of the nanoparticles as chalcopyrites.

Castro, Stephanie L.↗

NASA NTRS1975

Morphology and composition of chalcopyrite, chromite, Cu, Ni-Fe, pentlandite, and troilite in vugs of 76015 and 76215

Vugs from 76015 and 76215 are lined with euhedral crystals of plagioclase, pyroxene, ilmenite, Ni-Fe, and troilite. Smaller crystals of chromite, pentlandite, and chalcopyrite occur on the surface of the troilite in 76015. Wire Cu and dendritic-metallic Cu occurs with metallic Ni-Fe and troilite in some vugs of 76215. Troilite in both samples may have crystallized from an immiscible sulfide liquid. With falling temperature, chalcopyrite, and pentlandite may have exsolved from the troilite in 76015. By contrast, metallic Cu may have formed in 76215 by thermal breakdown of a bornite, troilite, and Ni-Fe assemblage which originally crystallized from a low-Ni immiscible sulfide liquid.

Carter, J. L.↗

NASA NTRS1993

Synthesis of polycrystalline chalcopyrite semiconductors by microwave irradiation

Polycrystalline samples of the chalcopyrites CuInS2, CuInSe2, and CuInSSe were prepared from stoichiometric mixtures of the pure elements by microwave irradiation. The reactions were performed in sealed quartz tubes in as few as 3 minutes. The products were analyzed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, and X-ray photoelectron spectroscopy. The surface morphology and shape of the particles produced by this method suggest that the products are formed from liquid melts. This method could be applied to the production of bulk chalcopyrite as sources for thin film growth.

Landry, Christopher C.↗

NASA NTRS2008

Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

Hepp, Aloysius F.↗

NASA NTRS2002

Synthesis and Characterization of the First Liquid Single Source Precursors for the Deposition of Ternary Chalcopyrite (CuInS2) Thin Film Materials

Molecular engineering of ternary single source precursors based on the [{PBu3}2Cu(SR')2In(SR')2] architecture have afforded the first liquid CIS ternary single source precursors (when R = Et, n-Pr), which are suitable for low temperature deposition (< 350 C). Thermogravimetric analyses (TGA) and modulated-differential scanning calorimetry (DSC) confirm their liquid phase and reduced stability. X-ray diffraction studies, energy dispersive analyzer (EDS), and scanning electron microscopy (SEM) support the formation of the single-phase chalcopyrite CuInS2 at low temperatures.

Banger, Kulbinder K.↗

NASA NTRS2002

A Review of Single Source Precursors for the Deposition of Ternary Chalcopyrite Materials

The development of thin-film solar cells on flexible, lightweight, space-qualified durable substrates (i.e. Kapton) provides an attractive solution to fabricating solar arrays with high specific power, (W/kg). The syntheses and thermal modulation of ternary single source precursors, based on the [{LR}2Cu(SR')2In(SR')2] architecture in good yields are described. Thermogravimetric analyses (TGA) and Low temperature Differential Scanning Caloriometry, (DSC) demonstrate that controlled manipulation of the steric and electronic properties of either the group five-donor and/or chalcogenide moiety permits directed adjustment of the thermal stability and physical properties of the precursors. TGA-Evolved Gas Analysis, confirms that single precursors decompose by the initial extrusion of the sulphide moiety, followed by the loss of the neutral donor group, (L) to release the ternary chalcopyrite matrix. X-ray diffraction studies, EDS and SEM on the non-volatile pyrolized material demonstrate that these derivatives afford single-phase CuInS2/CuInSe2 materials at low temperature. Thin-film fabrication studies demonstrate that these single source precursors can be used in a spray chemical vapor deposition process, for depositing CuInS2 onto flexible polymer substrates at temperatures less than 400 C.

Banger, K. K.↗

NASA NTRS2003

Synthesis and Characterization of Chalcopyrite (CuInS2 and CuhInSe2) Colloidal Nanoparticles for Optoelectronic Applications via Low-Temperature Pyrolysis of Single-Source Precursors

Nanocrystalline (or quantum dot) materials hold potential as components of next-generation photovoltaic (PV) devices. The inclusion of quantum dots in PV devices has been proposed as a means to improve the efficiency of photon conversion (quantum dot solar cell), enable low-cost deposition of thin-films, provide sites for exciton dissociation, and pathways for electron transport. Quantum dots are also expected to be more resistant to degradation from electron, proton, and alpha particle radiation than the corresponding bulk material, a requirement for use in space solar ~sells. Chalcopyrite nanocrystals can be produced by low-temperature thermal decomposition of single-source precursors such as (PR3)2CuIn(ER')4 (R = Ph, R' = Et, E = S; R = R' = Ph, E = Se). Single-source precursors are molecules which contain all the necessary elements for synthesis of a desired material. Thermal decomposition of the precursor results in the formation of material with the correct stoichiometry as a nanocrystalline powder or a thin film, often at significantly lower temperatures than those typically employed for thin-film deposition by multi-source evaporation techniques, typically less than 500 C. We show that CuInSz and CuInSe2 nanocrystals can be synthesized from the precursors at temperatures as low as 250 C. The nanocrystals are characterized by optical spectroscopy, X-ray diffraction, and electron microscopy.

Castro, S. L.↗

NASA NTRS2017

Design of Multifunctional Materials: Chalcogenides and Chalcopyrites

There is a strong need for developing multifunctional materials to reduce the cost of applied material without compromising the performance of the detectors, devices and sensors. The materials design, processing, growth and fabrication of bulk and nanocrystals and fabrication into devices and sensors involve huge cost and resources including a multidisciplinary team of experts. Because of this reason, prediction of multifunctionality of materials before design and development should be evaluated. Chalcogenides and chalcopyrites are a very exciting class of materials for developing multifunctionality. Materials such as Gallium selenide GaSe and zinc selenide ZnSe have been proven to be excellent examples. GaSe is a layered material and very difficult to grow in large crystal. However, it's ternary and quaternary analogs such as thallium gallium selenide TlGaSe2, thallium gallium selenide sulfide TlGaSe2-xSs, thallium arsenic selenide Tl3AsSe3, silver gallium selenide AgGaGe3Se8, AgGaGe5Se12 and several others have shown great promise for multifunctionality. Several of these materials have shown good efficiency for frequency conversion (nonlinear optical NLO), electro-optic modulation, and acousto-optic tunable filters and imagers suitable for the visible, near-infrared wavelength, mid wave infrared (MWIR), long wave infrared (LWIR) and even up to Tera hertz wavelength (THW) regions. In addition, this class of materials have demonstrated low absorption coefficients and power handling capability in the systems. Also, these crystals do not require post growth annealing, show very large transparency range and fabricability.

Singh, N. B.↗

NASA NTRS1990

Synthesis and structures of metal chalcogenide precursors

The reactivity of early transition metal sandwich complexes with sulfur-rich molecules such as dithiocarboxylic acids was studied. Researchers recently initiated work on precursors to CuInSe2 and related chalcopyrite semiconductors. Th every high radiation tolerance and the high absorption coefficient of CuInSe2 makes this material extremely attractive for lightweight space solar cells. Their general approach in early transition metal chemistry, the reaction of low-valent metal complexes or metal powders with sulfur and selenium rich compounds, was extended to the synthesis of chalcopyrite precursors. Here, the researchers describe synthesis, structures, and and routes to single molecule precursors to metal chalcogenides.

Hepp, Aloysius F.↗

NASA NTRS2002

Single Source Precursors for Thin Film Solar Cells

The development of thin film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. At NASA GRC we have focused on the development of new single source precursors (SSP) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD (chemical vapor deposition) process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV (photovoltaic) devices.

Banger, Kulbinder K.↗

NASA NTRS2002

Chemical Vapor Deposition for Ultra-lightweight Thin-film Solar Arrays for Space

The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. A key technical issues outlined in the 2001 U.S. Photovoltaic Roadmap, is the need to develop low cost, high throughput manufacturing for high-efficiency thin film solar cells. At NASA GRC we have focused on the development of new single-source-precursors (SSPs) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV devices.

Hepp, Aloysius F.↗

NASA NTRS2003

CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) which were prepared in-house. Films with either (112) or (204/220) preferred orientation, had a chalcopyrite structure, and (112)-oriented films contained more copper than (204/220)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always In-rich and were accompanied by a secondary phase. From the results of post-growth annealing, etching experiments, and Raman spectroscopic data, the secondary phase was identified as an In-rich compound. On the contrary, (112)-oriented films were always obtained with a minimal amount of the secondary phase, and had a maximum grain size of about 0.5 micron. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 and 30 Omega-cm, and an optical band gap of approximately 1.46 eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

Jin, Michael↗

NASA NTRS2004

CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) prepared in-house. Films with either (112) or (204/220) preferred orientation were obtained, and compositional analysis showed that (112)-oriented films contained more copper than (204/220)-oriented films. Using X-ray diffraction, the signature of chalcopyrite structure was often confirmed for (112)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always accompanied by a secondary phase, which was identified as an unknown In-rich compound from the results of post-growth annealing, etching experiments, and Raman spectroscopic data. By increasing Cu to In ratio in the film, (112)-oriented films were obtained with a maximum grain size of about 0.5 micrometers, and their X-ray diffractions did not show any observable signature of the In secondary phase. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 omega cm and 30 omega cm, and an optical band gap of 1.46eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

Jin, Michael H.-C.↗

NASA NTRS1975

The Nakhlites. I - Petrography and mineral chemistry. II - Where, when, and how

The two Nakhlite meteorites (Nakhla and Lafayette) are described, and their possible origin is discussed. It is shown that both objects are cumulates of clinopyroxene with augite as the major mineral and with lesser abundances of olivine, plagioclase, K-feldspar, Fe-Ti oxides, FeS, pyrite, chalcopyrite, and possibly iddingsite. Also, both meteorites are unbrecciated, and their texture is dominated by elongate subhedral to euhedral prisms of clinopyroxene. The data are shown to be compatible with the Nakhlites' being cumulative rocks from a common basaltic parent liquid. It is established that these objects are not of lunar origin, and it is concluded that the position of the parent body relative to other planetary bodies remains to be determined.

Bunch, T. E.↗

NASA NTRS1981

The mineralogy and the isotopic composition of sulfur in hydrothermal sulfide/sulfate deposits on the East Pacific Rise, 21 deg N latitude

The mineralogy and isotopic composition of sulfur found in hydrothermal deposits associated with five groups of vents along the ridge axis of the East Pacific Rise near 21 deg N latitude are investigated. Solid samples of mixed sulfides and sulfates from mounds, chimneys and the surrounding sediment as well as fresh basaltic glass were examined with a portable X-ray fluorescence spectrometer and by scanning electron microscopy, X-ray diffractometry, and electron microprobe analysis. For the three vents of exit temperature close to 350 C, the chimneys are found to be rich in copper sulfides, while for those of temperatures around 300 C, zinc sulfide is found to predominate. The major sulfides found in the chimneys include wurtzite, chalcopyrite, pyrite and cubanite, with anhydrite the dominant sulfate. Significant mineralogical differences are found between active and inactive vents. The isotopic composition of sulfur in anhydrites from active vents is observed to be close to that of sea water and consistent with a derivation from sea water sulfate. The isotopic composition of sulfur in the sulfide minerals is explained in terms of precipitation from solutions with reduced sulfur derived from basalts or basaltic magmas, and sea water sulfate. Finally, the deposits are interpreted as the results of the mixing of H2S-dominated hydrothermal fluids with cold sea water near the sea floor.

Styrt, M. M.↗

NASA NTRS1983

Growth and evaluation of AgGaS2 and AgGaSe2 for infrared nonlinear applications

The crystal growth technology for the two chalcopyrite compounds AgGaS2 and AgGaSe2 was studied. These two materials demonstrated their promise as important nonlinear crystals for infrared applications ten years ago. However, at the time, a number of various growth related problems such as cracking, twinning and the occurrence of optical scattering centers made it difficult to obtain high quality specimens in sizes exceeding 1 cm. Using seeding and precision-tapered fused quartz growth ampoules, a Bridgman/Stockbarger growth technology was developed to grow crack and twin-free boules in increasingly larger dimensions with an ultimate goal of 4 cm crystals harvested obliquely from c-axis boules. The post-growth heat treatment procedures were studied to understand the solid state chemical reactions and to avoid crystal damage which frequently occurs during these annealing procedures.

Byer, R. L.↗

NASA NTRS1984

Progress in optical parametric oscillators

It is pointed out that tunable coherent sources are very useful for many applications, including spectroscopy, chemistry, combustion diagnostics, and remote sensing. Compared with other tunable sources, optical parametric oscillators (OPO) offer the potential advantage of a wide wavelength operating range, which extends from 0.2 micron to 25 microns. The current status of OPO is examined, taking into account mainly advances made during the last decade. Attention is given to early LiNbO3 parametric oscillators, problems which have prevented wide use of parametric oscillators, the demonstration of OPO's using urea and AgGaS2, progress related to picosecond OPO's, a breakthrough in nanosecond parametric oscillators, the first demonstration of a waveguide and fiber parametric amplification and generation, the importance of chalcopyrite crystals, and theoretical work performed with the aim to understand the factors affecting the parametric oscillator performance.

Fan, Y. X.↗