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Novel Chalcopyrites for Advanced Photoelectrochemical Water Splitting
With the support of DoE’s EERE office, our team has established a unique tool-chest of capabilities, including theoretical modeling (Lawrence Livermore National Laboratory: LLNL), state-of-the-art synthesis (Hawaii Natural Energy Institute: HNEI, Stanford, and the National Renewable Energy Laboratory: NREL) and advanced materials and interfaces characterization (University of Nevada, Las Vegas: UNLV, and Lawrence Berkeley National Laboratory: LBNL), to accelerate the development of high efficiency and durable chalcopyrite materials for advanced photoelectrochemical (PEC) water splitting. Using this synergistic approach, we have successfully created new wide bandgap chalcopyrite photocathodes generating over 10 mA/cm 2 , developed innovative strategies to protect them from corrosion, and engineered novel integration methods to circumvent thin film materials mechanical, chemical and thermal incompatibility. In Task 1 “Modeling and synthesis of chalcopyrite photocathodes”, we expanded our library of wide bandgap chalcopyrites for PEC water splitting. With support from LLNL’s “Computational Materials Diagnostics and Optimization of PEC Devices”, LBNL’s “photophysical” and NREL’s “I-III-VI Compound Semiconductors for Water-Splitting” nodes, we investigated two new chalcopyrite candidates for PEC water splitting: Cu(In,Al)Se 2 and Cu(In,B)Se 2 . We also further developed ordered vacancy compounds, such as CuGa 3 Se 5 , with unprecedented durability during PEC waters splitting in acidic solutions. In Task 2 “Interfaces engineering for enhanced efficiency and durability”, we addressed both the non-ideal band-edge positions of chalcopyrites with respect to water redox potentials, as well as their chemical instability under PEC water splitting, with a buried-junctions approach. With help from NREL’s “High-Throughput Experimental Thin Film Combinatorial Capabilities” and “Corrosion Analysis of Materials” nodes, we engineered environmentally friendly n-type buffers, including Mn x Zn 1-x O, to adjust the chalcopyrite band-edge positions and achieved photovoltages as high as 925 mV. Also, we integrated non-precious catalytic-protecting layers, such as WO 3 , to enhance the water splitting long-term stability of chalcopyrite absorbers. Finally, in Task 3 “Hybrid photoelectrode device integration”, we proposed an innovative method to bond wide bandgap photocathodes onto narrow bandgap PV drivers at room temperature using conductive polymers. Our semi-monolithic approach addressed fundamental processing incompatibility issues, as both the photocathode and the PV driver are processed separately. Proof-of-concept whole-chalcopyrite tandems were obtained by consecutive exfoliation and transfer of fully integrated 1.85 eV CuGa 3 Se 5 and 1.13 eV CuInGaSe 2 stacks from their Mo/SLG substrates onto a new single FTO host substrate.
Assessing the roles of Cu- and Ag-deficient layers in chalcopyrite-based solar cells through first principles calculations
Chalcopyrites are a demonstrated material platform for realizing efficient thin-film photovoltaics, with the most well known Cu(In,Ga)Se 2 (CIGS)-based solar cells exceeding 23%. Several factors, including flexibility in tuning the absorber bandgap, enhanced surface treatments, and the electrically benign nature of common defects are responsible for the existing high performance and future promise in chalcopyrite-based photovoltaic devices. The introduction of Cu-poor phases (also known as ordered-vacancy compounds or OVCs) between the absorber and buffer layers in CIGS solar cells is known to enhance device performance; however, the overall properties and role of OVCs remain poorly understood. Using first principles calculations based on the density functional theory with screened hybrid functionals, here we explore the electronic structure and stability of OVCs and their band offsets with defect-free chalcopyrite layers in Cu- and Ag-based compounds (ABX 2 where A=Cu, Ag; B=In, Ga, Al; and X=S, Se). Using AB 3 X 5 and AB 5 X 8 stoichiometries as model OVC systems, we report on the variation of the bandgap with the A/B ratio and discuss the trends in other Cu- and Ag-based chalcopyrites beyond CuInSe 2 . We find that the valence and conduction bands are lower in energy in OVCs with respect to the parent ABX 2 chalcopyrite owing to a reduced p–d interaction between X and A atoms. We additionally perform device-level simulations to assess the implications of the results, finding that the valence band offsets of OVCs are favorable, while the conduction band offsets of chalcopyrites beyond CuInSe 2 -based absorbers may be detrimental in conventional solar cell device designs.
The Reductive Leaching of Chalcopyrite by Chromium(II) Chloride for the Rapid and Complete Extraction of Copper
A hydrometallurgical process is developed to lower the costs of copper production and thereby sustain the use of copper throughout the global transition to renewable energy technologies. The unique feature of the hydrometallurgical process is the reductive treatment of chalcopyrite, which is in contrast to the oxidative treatment more commonly pursued in the literature. Chalcopyrite reduction by chromium(II) ion is described for the first time and superior kinetics are shown. At high concentrate loadings of 39, 78, and 117 gL –1 , chalcopyrite reacted completely within minutes at room temperature and pressure. The XRD, SEM-EDS, and XPS measurements indicate that chalcopyrite reacts to form copper(I) chloride (CuCl). After the reductive treatment, the mineral products are leached by iron(III) sulfate to demonstrate the complete extraction of copper. The chromium(II) ion may be regenerated by an electrolysis unit inspired by an iron chromium flow battery in a practical industrial process.
Liquid Copper and Iron Production from Chalcopyrite, in the Absence of Oxygen
Clean energy infrastructure depends on chalcopyrite: the mineral that contains 70% of the world’s copper reserves, as well as a range of precious and critical metals. Smelting is the only commercially viable route to process chalcopyrite, where the oxygen-rich environment dictates the distribution of impurities and numerous upstream and downstream unit operations to manage noxious gases and by-products. However, unique opportunities to address urgent challenges faced by the copper industry arise by excluding oxygen and processing chalcopyrite in the native sulfide regime. Through electrochemical experiments and thermodynamic analysis, gaseous sulfur and electrochemical reduction in a molten sulfide electrolyte are shown to be effective levers to selectively extract the elements in chalcopyrite for the first time. We present a new process flow to supply the increasing demand for copper and byproduct metals using electricity and an inert anode, while decoupling metal production from fugitive gas emissions and oxidized by-products.
A perspective on ordered vacancy compound and parent chalcopyrite thin film absorbers for photoelectrochemical water splitting
Chalcopyrites could fill the gap between the low-cost, poor-efficiency single junction metal oxide photoelectrochemical (PEC) water splitting cells and the high efficiency, yet costly III–V tandems. In this Perspective, we first review the key barriers that must be addressed by the community to enable economical chalcopyrite-based PEC water splitting. Then, we highlight how theoretical modeling can be used to identify promising ordered vacancy compound absorbers with improved energetics compared to their chalcopyrite parents. Finally, we describe how advanced spectroscopic analysis performed on chalcopyrite photocathodes after PEC testing uncovered a new passivation layer candidate for prolonged durability.
Vanadium (II) Sulfate for the Reductive Leaching of Chalcopyrite: Replacing Smelting with Electrolysis for Copper Production
The demand for copper is expected to outpace supply in the coming decades due in part to the emergence of wind and solar technologies, which require about five times as much copper as traditional energy sources. This work introduces a potentially transformative hydrometallurgical process to extract copper from chalcopyrite, and thereby sustain a high rate of copper production throughout the 21 st century. Chalcopyrite is reacted with vanadium (II) sulfate for the first time to enable the rapid, clean, and complete recovery of copper. Reactions between 39 g/L copper concentrate, 1 M vanadium (II) sulfate, and various concentrations of sulfuric acid yielded a final product of solid copper sulfate, which was characterized by X-ray diffraction (XRD) and scanning electron microscopy-energy dispersive X-ray spectroscopy (SEM-EDS) analysis. The solid products were leached in a subsequent step to demonstrate copper yields ranging from 95–99%. The vanadium (II) ion may be regenerated by an electrolysis unit that leverages advances in vanadium flow battery technologies.
High Thermoelectric Performance in Chalcopyrite Cu 1-x Ag x GaTe 2 –ZnTe: Nontrivial Band Structure and Dynamic Doping Effect
The understanding of thermoelectric properties of ternary I–III–VI 2 type (I = Cu, Ag; III = Ga, In; and VI = Te) chalcopyrites is less well developed. Although their thermal transport properties are relatively well studied, the relationship between the electronic band structure and charge transport properties of chalcopyrites has been rarely discussed. In this study, we reveal the unusual electronic band structure and the dynamic doping effect that could underpin the promising thermoelectric properties of Cu 1–x Ag x GaTe 2 compounds. Density functional theory (DFT) calculations and electronic transport measurements suggest that the Cu 1–x Ag x GaTe 2 compounds possess an unusual non-parabolic band structure, which is important for obtaining a high Seebeck coefficient. Moreover, a mid-gap impurity level was also observed in Cu 1–x Ag x GaTe 2 , which leads to a strong temperature-dependent carrier concentration and is able to regulate the carrier density at the optimized value for a wide temperature region and thus is beneficial to obtaining the high power factor and high average ZT of Cu 1–x Ag x GaTe 2 compounds. We also demonstrate a great improvement in the thermoelectric performance of Cu 1–x Ag x GaTe 2 by introducing Cu vacancies and ZnTe alloying. The Cu vacancies are effective in increasing the hole density and the electrical conductivity, while ZnTe alloying reduces the thermal conductivity. As a result, a maximum ZT of 1.43 at 850 K and a record-high average ZT of 0.81 for the Cu 0.68 Ag 0.3 GaTe 2 –0.5%ZnTe compound are achieved.
Semi-monolithic Integration of All-Chalcopyrite Multijunction Solar Conversion Devices via Thin-Film Bonding and Exfoliation
Here we report on a semi-monolithic integration method to circumvent processing incompatibility between materials of dissimilar classes and combine them into multijunction devices for photovoltaic and photoelectrochemical applications. Proof-of-concept all-chalcopyrite tandems were obtained by consecutive transfer of fully integrated unpatterned 1.85 eV CuGa 3 Se 5 and 1.13 eV CuInGaSe 2 PV stacks from their Mo/soda lime glass substrates onto a new single host substrate. This transfer approach consists of two key steps: (1) bonding of the solar stack (face down) onto a handle (e.g., SnO 2 :F, FTO) using a transparent conductive composite and (2) delamination of the solar stack at the chalcopyrite/Mo interface by employing a wedge-based exfoliation technique. Upon transfer onto FTO, a CuGa 3 Se 5 champion device demonstrated near-coincident photocurrent density-voltage characteristic with a baseline measurement. Then, the exfoliated CuGa 3 Se 5 single-junction stack transferred onto FTO served as the new host onto which a second fully processed CuInGaSe 2 stack was bonded (face down) onto and liberated from its Mo/SLG substrate, leading to a complete transfer of both sub-cells onto one FTO substrate. A champion semi-monolithic tandem device exhibited a power conversion efficiency of 5.04% with an open-circuit voltage, a short-circuit current density, and a fill factor of 1.24 V, 7.19 mA/cm 2 , and 56.7%, respectively. This first-time demonstration of a fully operational semi-monolithic device provides a new avenue to combine thermally, mechanically, and/or chemically incompatible thin-film material classes into tandem photovoltaic and photoelectrochemical devices while maintaining state-of-the-art sub-cell processing.
Structure and disorder resulting in ultralow thermal conductivity in the defect chalcopyrite AgInSnSe 4
Quaternary chalcogenides are attractive for a variety of technological fields of interest due to the diverse physical properties these materials possess. Herein, the structural and thermal properties of the disordered chalcopyrite AgInSnSe 4 are reported revealing a distinct relation between its structure and physical properties. Modeling of the experimental temperature-dependent thermal properties revealed an ultralow thermal conductivity (0.47 Wm -1 K -1 at room temperature) due to lattice anharmonicity, a low speed of sound and a low Debye temperature. Moreover, first principles electronic structure calculations revealed that the Ag-Se tetrahedra within the crystal structure possess relatively weak bonds due to occupied antibonding states from p-d orbital hybridization, which suppress the thermal conductivity. Here, in order to further quantify our findings, we extended our analyses to include comparisons with other ternary and quaternary adamantine materials, all of which possess a fourfold tetrahedral coordination of atoms, in revealing the origin of the thermal properties in AgInSnSe 4 .
Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface
The electrical and optoelectronic properties of materials are determined by the chemical potentials of their constituents. The relative density of point defects is thus controlled, allowing to craft microstructure, trap densities and doping levels. Here, we show that the chemical potentials of chalcogenide materials near the edge of their existence region are not only determined during growth but also at room temperature by post-processing. In particular, we study the generation of anion vacancies, which are critical defects in chalcogenide semiconductors and topological insulators. The example of CuInSe 2 photovoltaic semiconductor reveals that single phase material crosses the phase boundary and forms surface secondary phases upon oxidation, thereby creating anion vacancies. The arising metastable point defect population explains a common root cause of performance losses. This study shows how selective defect annihilation is attained with tailored chemical treatments that mitigate anion vacancy formation and improve the performance of CuInSe 2 solar cells.
Ultralow thermal conductivity in diamondoid lattices: high thermoelectric performance in chalcopyrite Cu 0.8+y Ag 0.2 In 1–y Te 2
Because of its unique transport properties, CuInTe 2 has been considered as a promising p-type material for thermoelectric applications. However, its diamondoid structure gives it a high intrinsic lattice thermal conductivity that greatly limits its thermoelectric performance. In this study, we demonstrate that Ag alloying gives rise to an extremely low lattice thermal conductivity of 0.47 W m –1 K –1 for Cu 0.8 Ag 0.2 InTe 2 at 850 K. Moreover, we found Cu doping significantly improves the carrier mobility while simultaneously increasing the carrier concentraton. As a result, the power factor of Cu 0.8 Ag 0.2 InTe 2 increases and a maximum ZT of ~1.6 is achieved at 850 K. Both DFT calculations and low temperature heat capacity measurements suggest a strong interaction between low frequency optical phonons and heat carrying acoustic phonons, which is derived from the weak Ag–Te bonding. Here, this strong phonon coupling decreases the Debye temperature and induces a low sound velocity.
Polytypic Zn–(In,Ga)–Se Nanocrystals with Tunable Emission
While the polymorphism of chalcopyrite semiconductors has been widely studied, the wurtzite analogues of defect-chalcopyrite II–III 2 –VI 4 compositions, such as Zn(In,Ga) 2 (S,Se) 4 , remain underexplored. Here, we report the synthesis of polytypic Zn–(In,Ga)–Se multipods via cation exchange using ZnSe as a template. With cubic cores and wurtzite arms elongated along the hexagonal c-axis, the multipods retain the structure and morphology of the ZnSe template. Optical characterization reveals composition-dependent absorption and photoluminescence, tunable from the visible to the near-infrared region, with spectral features distinct from those of previously reported defect-chalcopyrite structures. Temperature-dependent measurements demonstrate strong emission at cryogenic temperatures, which is quenched near room temperature due to thermally activated nonradiative processes. Here, we illustrate the use of ZnSe as a platform for cation exchange toward wurtzite multinary chalcogenides, unlocking access to novel structures with colorful optical properties.