Population inversion in charge exchange collisions
A theoretical model of charge exchange utilizing reasonable potential energy curves and coupling matrix elements in a two state impact parameter calculation is presented.
Matese, J. J.↗
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Frequency response of charge transfer in MOS inversion layers
The dynamics of charge transfer from a reservoir into an MOS inversion layer, which limits the frequency response of an MOS transistor or a charge-coupled device, is investigated. Using Berman and Kerr's model of space-charge capacitance in the semiconductor, a small-signal distributed model is developed for an MOS structure which transfers charge in an inversion channel due to a variation in the gate voltage. The dynamics of the charge transfer is characterized by a time constant which is determined by the length of the inversion channel and its mobility. Experimental data of gate capacitance vs frequency, taken from a test structure with a diffused source/drain well, are satisfactorily fitted by theoretical curves derived from the model. The channel mobility is precisely determined from the adjusted time constant. The influence of interface states on the capacitance-frequency relationship is also briefly discussed.
Lieneweg, U.↗
Negative ions in the ionospheres of planetary bodies without atmospheres
It is noted that negative ions may be formed in the ionospheres of Mercury, the moon, and Jupiter's satellites with densities of a few percent of the ionospheric electron density. Negative ions result from three mechanisms at the planetary surface: charge inversion during energetic proton scattering, with simultaneous secondary negative ion emission, and micrometeorite impacts. The density and distribution of negative ions around planetary bodies depends primarily on the negative ion lifetimes determined through photodetachment by solar radiation.
Wekhof, A.↗
Negative ions in comets
Negative ion sources in comets are identified and cometary plasma effects caused by negative ions are examined. The primary negative ion sources are shown to be: (1) for the inner coma - photodissociation of HCN, electron attachment of OH, and collision with alkalis; (2) in the vicinity of the nucleus - interplanetary dust collisions with the nucleus; and (3) for both the contaminated solar wind region and sporadic discharges in the nonhomogeneous inner coma plasma - dissociative electron attachment and charge inversion during keV positive ion scattering by cometary dust. Negative ion abundance for Halley's Comet has been estimated to be 10 to the -6th - 10 to the -10th of electron densities.
Wekhof, A.↗
Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices
We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.
Biegel, Bryan A.↗
Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices
We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.
Biegel, Bryan A.↗
Population inversion calculations using near resonant charge exchange as a pumping mechanism
Near resonance charge exchange between ions of a large ionization potential gas such as helium or neon and vapors of metals such as zinc, cadmium, selenium, or tellurium has produced laser action in the metal ion gas. The possibility of obtaining population inversions in near resonant charge exchange systems (Xe-Ca, Xe-Mg, Xe-Sr, Xe-Ba, Ar-Mg, N-Ca) was investigated. The analysis is an initial value problem that utilizes rate equations for the densities of relevant levels of the laser gas (Ca, Ba, Mg, or Sr) and an electron energy equation. Electron excitation rates are calculated using the Bohr-Thomson approximation for the cross section. Approximations to experimental values of the electron ionization cross section and the ion-atom charge exchange cross section are used. Preliminary results have been obtained for the Ca-Xe system and show that it is possible to obtain gains greater than 10 to the 14th power/m with inversion times up to 8x10 to the minus 7th power second. A possible charge exchange laser system using a MPD arc plasma accelerator is also described.
Chubb, D. L.↗
Population inversion calculations using near resonant charge exchange as a pumping mechanism.
A theoretical study is conducted to investigate the possibility of obtaining inversions in a plasma of metals such as Mg, Ca, Sr, or Ba by charge exchange with inert gas ions. The gases considered include He, Ne, Xe, Ar, or N. The analysis uses rate equations to calculate the density of the various ion levels and an energy equation to calculate the electron temperature. Both charge exchange and electron collisional excitation of the various ion levels are considered.
Chubb, D. L.↗
Population inversion calculations using near-resonant charge exchange as a pumping mechanism.
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Chubb, D. L.↗
Laboratory simulation of space aerodynamic phenomena - Satellite wake studies
The reasons for and the results of laboratory simulation studies of space plasma flow over obstacles are discussed in the context of satellite-ionosphere interactions and of forthcoming Skylab experiments. So far, it appears that ions passing through the plasma sheath are focused onto the wake axis, thereby creating an enhanced ion current which peaks at approximately a 'Mach' number of radii downstream from floating spherical bodies. The location of the peak enhancement shows a hyperbolic dependence on body potential, while its structure depends on the body cross-sectional geometry rather than on the axial dimension. There is a corresponding enhancement of the electron current coexistent with the ion-current enhancement. An electron temperature enhancement can sometimes occur in the near-wake 'ion void' region with a magnitude inversely proportional to charged particle density. Some supplementary experiments are suggested to support the planned Skylab experiments.
Samir, U.↗
Monte Carlo simulation of collisionless shocks showing preferential acceleration of high A/Z particles
A collisionless quasi-parallel shock is simulated by Monte Carlo techniques. The scattering of all velocity particles from thermal to high energy is assumed to occur so that the mean free path is directly proportional to velocity times the mass-to-charge-ratio, and inversely proporational to the plasma density. The shock profile and velocity spectra are obtained, showing preferential acceleration of high A/Z particles relative to protons. The inclusion of the back pressure of the scattering particles on the inflowing plasma produces a smoothing of the shock profile, which implies that the spectra are steeper than for a discontinuous shock.
Ellison, D. C.↗
Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model
The continued down-scaling of electronic devices, in particular the commercially dominant MOSFET, will force a fundamental change in the process of new electronics technology development in the next five to ten years. The cost of developing new technology generations is soaring along with the price of new fabrication facilities, even as competitive pressure intensifies to bring this new technology to market faster than ever before. To reduce cost and time to market, device simulation must become a more fundamental, indeed dominant, part of the technology development cycle. In order to produce these benefits, simulation accuracy must improve markedly. At the same time, device physics will become more complex, with the rapid increase in various small-geometry and quantum effects. This work describes both an approach to device simulator development and a physical model which advance the effort to meet the tremendous electronic device simulation challenge described above. The device simulation approach is to specify the physical model at a high level to a general-purpose (but highly efficient) partial differential equation solver (in this case PROPHET, developed by Lucent Technologies), which then simulates the model in 1-D, 2-D, or 3-D for a specified device and test regime. This approach allows for the rapid investigation of a wide range of device models and effects, which is certainly essential for device simulation to catch up with, and then stay ahead of, electronic device technology of the present and future. The physical device model used in this work is the density-gradient (DG) quantum correction to the drift-diffusion model [Ancona, Phys. Rev. B 35(5), 7959 (1987)]. This model adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We used the DG model in 1-D and 2-D (for the first time) to simulate both bipolar and unipolar devices. Simulations of heavily-doped, short-base diodes indicated that the DG quantum corrections do not have a large effect on the IN characteristics of electronic devices without heteroj unction s. On the other hand, ultra-small MOSFETs certainly exhibit important quantum effects that the DG model will include: quantum repulsion of the inversion and gate charges from the oxide interfaces, and quantum tunneling through thin gate oxides. We present initial results of 2-D DG simulations of ultra-small MOSFETs. Subtle but important issues involving the specification of the model, boundary conditions, and interface constraints for DG simulation of MOSFETs will also be illuminated.
Biegal, Bryan A.↗
Safety hazards associated with the charging of lithium/sulfur dioxide cells
A continuing research program to assess the responses of spirally wound, lithium/sulfur dioxide cells to charging as functions of charging current, temperature, and cell condition prior to charging is described. Partially discharged cells that are charged at currents greater than one ampere explode with the time to explosion inversely proportional to the charging current. Cells charged at currents of less than one ampere may fail in one of several modes. The data allows an empirical prediction of when certain cells will fail given a constant charging current.
Frank, H.↗
Inverse third power law for the shielding of test particles.
Far field effective potential of charged particle in Vlasov plasma, discussing inverse third power law for shielding test particles
Joyce, G.↗
Induced junction solar cell and method of fabrication
An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n+ stripes and thermally growing a thin SiO2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized.
Maserjian, J.↗
Studies in electron phenomena in MOS structures: The pulsed C-V method
The pulse hysteresis capacitance voltage (C-V) provides a straight forward technique for measuring the change of various charges in MOS structures and a tool for investigating the kinetics of various electron phenomena is developed and described. The method can be used for measuring the energy distribution and kinetics of surface states with the resolution of about 1/5 x 10 to the -9 power cm eV. Some transients in an MOS structure, particularly, the thermal generation of minority charge carriers via surface states and the relaxation of minority charge carriers supplied from the inversion layer outside the MOS structure are theoretically investigated. Analytical expressions which clearly present the physics of those electron phenomena are derived.
Kaplan, G.↗
An induced junction photovoltaic cell
Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.
Call, R. L.↗
Multifrequency emission from hot ion disks
The discovery of a large number of gamma-emitting active galactic nuclei (AGNs) by the EGRET instrument on the Compton Gamma Ray Observatory (CGRO) has spawned a lot of theoretical interest in the high-energy and multifrequency emission from these objects. Since most of them show evidence for relativistic outflow, jet models have received most of the attention so far. However, the presence of soft photons at the center of the active nucleus and the resulting Compton drag make it difficult to produce the observed amount of MeV/GeV emission. We explore hot, two-temperature accretion disks around Kerr black holes as an alternative to relativistic beam models for the production of the high-enerty emission. The decay of neutral pions created in the hot region produces photons with energies up to several hundred MeV. Relativistic pairs created as a result of charged pion decays produce additional inverse-Compton radiation in the range of approx. 1 keV-4 MeV if the pairs are exposed to UV radiation, or in the range of approx. 40 keV-150 MeV if the pairs are exposed to soft X-rays. This suggests that high-energy flares in AGNs may be triggered by changes in the disk structure (such as phase transitions or the development of electron scattering coronae) that temporarily shield the hot inner region from UV photons emitted at larger radii, thereby reducing the optical depth for MeV/GeV gamma-rays. Stochastic processes may also play a role in accelerating the utrarelativistic electrons responsible for producing the highest energy (GeV) emission.
Maisack, Michael↗