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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Charge Storage, Conductivity and Charge Profiles of Insulators as Related to Spacecraft Charging

Dissipation of charges built up near the surface of insulators due to space environment interaction is central to understanding spacecraft charging. Conductivity of insulating materials is key to determine how accumulated charge will distribute across the spacecraft and how rapidly charge imbalance will dissipate. To understand these processes requires knowledge of how charge is deposited within the insulator, the mechanisms for charge trapping and charge transport within the insulator, and how the profile of trapped charge affects the transport and emission of charges from insulators. One must consider generation of mobile electrons and holes, their trapping, thermal de-trapping, mobility and recombination. Conductivity is more appropriately measured for spacecraft charging applications as the "decay" of charge deposited on the surface of an insulator, rather than by flow of current across two electrodes around the sample. We have found that conductivity determined from charge storage decay methods is 102 to 104 smaller than values obtained from classical ASTM and IEC methods for a variety of thin film insulating samples. For typical spacecraft charging conditions, classical conductivity predicts decay times on the order of minutes to hours (less than typical orbit periods); however, the higher charge storage conductivities predict decay times on the order of weeks to months leading to accumulation of charge with subsequent orbits. We found experimental evidence that penetration profiles of radiation and light are exceedingly important, and that internal electric fields due to charge profiles and high-field conduction by trapped electrons must be considered for space applications. We have also studied whether the decay constants depend on incident voltage and flux or on internal charge distributions and electric fields; light-activated discharge of surface charge to distinguish among differing charge trapping centers; and radiation-induced conductivity. Our experiments also show that "Malter" electron emission occurs for hours after turning off the electron beam. This Malter emission similar to emission due to negative electron affinity in semiconductors is a result of the prior radiation or optical excitations of valence electrons and their slow drift among traps towards the surface where they are subsequently emitted. This work is supported through funding from the NASA Space Environments and Effects Program.

Dennison, J. R.↗
NASA NTRS2004

Comparison of Classical and Charge Storage Methods for Determining Conductivity of Thin Film Insulators

Conductivity of insulating materials is a key parameter to determine how accumulated charge will distribute across the spacecraft and how rapidly charge imbalance will dissipate. Classical ASTM and IEC methods to measure thin film insulator conductivity apply a constant voltage to two electrodes around the sample and measure the resulting current for tens of minutes. However, conductivity is more appropriately measured for spacecraft charging applications as the "decay" of charge deposited on the surface of an insulator. Charge decay methods expose one side of the insulator in vacuum to sequences of charged particles, light, and plasma, with a metal electrode attached to the other side of the insulator. Data are obtained by capacitive coupling to measure both the resulting voltage on the open surface and emission of electrons from the exposed surface, as well monitoring currents to the electrode. Instrumentation for both classical and charge storage decay methods has been developed and tested at Jet Propulsion Laboratory (JPL) and at Utah State University (USU). Details of the apparatus, test methods and data analysis are given here. The JPL charge storage decay chamber is a first-generation instrument, designed to make detailed measurements on only three to five samples at a time. Because samples must typically be tested for over a month, a second-generation high sample throughput charge storage decay chamber was developed at USU with the capability of testing up to 32 samples simultaneously. Details are provided about the instrumentation to measure surface charge and current; for charge deposition apparatus and control; the sample holders to properly isolate the mounted samples; the sample carousel to rotate samples into place; the control of the sample environment including sample vacuum, ambient gas, and sample temperature; and the computer control and data acquisition systems. Measurements are compared here for a number of thin film insulators using both methods at both facilities. We have found that conductivity determined from charge storage decay methods is 102 to 104 larger than values obtained from classical methods. Another Spacecraft Charging Conference presentation describes more extensive measurements made with these apparatus. This work is supported through funding from the NASA Space Environments and Effects Program and the USU Space Dynamics Laboratory Enabling Technologies Program.

Swaminathan, Prasanna↗
NASA NTRS1998

Numerical Examination of Silicon Avalanche Photodiodes Operated in Charge Storage Mode

The behavior of silicon-based avalanche photodiodes (APD's) operated in the charge storage mode is examined. In the charge storage mode, the diodes are periodically biased to a sub-breakdown voltage and then open-circuited. During this integration period, photo-excited and thermally generated carriers are accumulated within the structure. The dynamics of this accumulation and its effects upon the avalanching of the diode warrants a detailed, fully numerical analysis. The salient features of this investigation include device sensitivity to the input photo-current including the self-quenching effect of the diode and its limitations in sensing low light levels, the dependence of the response on the bulk lifetime and hence on the generation current within the device, the initial gain, transient response, dependence of the device uniformity upon performance, and the quantity of storable charge within the device. To achieve these tasks our device simulator, STEBS-2D, was utilized. A modified current-controlled boundary condition is employed which allows for the simulation of the isolated diode after the initial reset bias has been applied. With this boundary condition, it is possible to establish a steady-state voltage on the ohmic contact and then effectively remove the device from the external circuit while still including effects from surface recombination, trapped surface charge, and leakage current from the read-out electronics.

Parks, Joseph W., Jr.↗
NASA NTRS2003

Evaluation of Charge Storage and Decay in Spacecraft Insulators

Two reports discuss methods for evaluating the magnitude of electrostatic charging that occurs in spacecraft dielectric materials (in particular, polyimides) during prolonged exposure to radiation in outer space. The reports describe experiments on the electrical resistivities and charge-storage properties of polyimide specimens in a dark, evacuated environment, both before and after 5-megarad exposures to rays from cobalt-60. The experiments were designed to measure these properties not under standard conditions prescribed for testing dielectrics in air but, rather, under conditions approximating those in the intended spacecraft applications. The results of the experiments showed that the electrical resistivities of the insulations as determined under these conditions are greater, by a factor of roughly a thousand, than those determined under the standard conditions and that the gamma irradiation reduced resistivities marginally.

Frederickson, Arthur↗
NASA NTRS1982

Differential imaging using charge-coupled device (CCD) imagers with on-chip charge storage

A CCD technique is described which allows long integration periods between readouts together with moderate chopping rates. During each phase of a differential chopping cycle, one set of charge images is shifted to the center of the chip, which is light sensitive. At the same time, the other set of charge images is shifted under one of two masked areas which serve as charge-storage sites. Since the vertical shifting between phases can be accomplished in much less time than the typical exposure per phase, there is negligible image smearing. For a given light level and chopping rate the performance of this technique is limited primarily by the readout noise and the vertical charge transfer inefficiency. If many transfer cycles are required between readouts, the charge transfer inefficiency will diffuse the accumulated charge images along the vertical columns. Laboratory and astronomical data obtained with this technique using a CCD camera and the 2.3 m telescope on Kitt Peak are presented.

Stockman, H. S.↗
NASA NTRS1970

Improved solid state electron-charge-storage device

Storage device is applicable in memory systems and in high-resolution arrays for light-responsive image sensing. The device offers high yield in multiple arrays and allows charge release with light striking only the edge of a metal electrode.

Kuper, A. B.↗
NASA NTRS1986

Transit time and charge storage measurements in heavily doped emitters

A first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer is reported. The value was obtained by a high-frequency conductance method recently developed and used for low-doped Si. The transit time coupled with the steady-state current enables the determination of the quasi-static charge stored in the emitter and the quasi-static emitter capacitance. Using a transport model, from the measured transit time, the value for the minority-carrier diffusion coefficient and mobility is estimated. The measurements were done using a heavily doped emitter of the Si p(+)-n-p bipolar transistor. The new result indicates that the position-averaged minority-carrier diffusion coefficients may be much smaller than the corresponding majority-carrier values for emitters having a concentration ranging from about 3 x 10 to the 19th per cu cm to 10 to the 20th per cu cm.

Neugroschel, A.↗
NASA NTRS2003

Artificial Neural Network with Hardware Training and Hardware Refresh

A neural network circuit is provided having a plurality of circuits capable of charge storage. Also provided is a plurality of circuits each coupled to at least one of the plurality of charge storage circuits and constructed to generate an output in accordance with a neuron transfer function. Each of a plurality of circuits is coupled to one of the plurality of neuron transfer function circuits and constructed to generate a derivative of the output. A weight update circuit updates the charge storage circuits based upon output from the plurality of transfer function circuits and output from the plurality of derivative circuits. In preferred embodiments, separate training and validation networks share the same set of charge storage circuits and may operate concurrently. The validation network has a separate transfer function circuits each being coupled to the charge storage circuits so as to replicate the training network s coupling of the plurality of charge storage to the plurality of transfer function circuits. The plurality of transfer function circuits may be constructed each having a transconductance amplifier providing differential currents combined to provide an output in accordance with a transfer function. The derivative circuits may have a circuit constructed to generate a biased differential currents combined so as to provide the derivative of the transfer function.

Tuan A Duong↗
NASA NTRS1977

Measurement of material parameters that limit the open-circuit voltage in P-N-junction silicon solar cells

The greatest gains in solar energy conversion efficiency of p-n-junction silicon solar cells come from increasing the open-circuit voltage V sub OC; it is important to understand and characterize the material parameters that limit the V sub OC. Strong experimental evidence exists to support the assertion that either an anomalously large minority carrier charge storage or an anomalously small minority carrier lifetime in the quasi-neutral emitter region limits the open circuit voltage. A method is presented for measuring charge storage and effective lifetime. Static and transient measurements are analyzed using physical models of the solar cell characteristics. This analysis yields the emitter charge storage and life-time, which then can be related to the various physical mechanisms, such as energy band gap shrinkage, that have been proposed earlier as responsible for limiting V sub OC.

Lindholm, F. A.↗
NASA NTRS2005

Proposed Modifications to Engineering Design Guidelines Related to Resistivity Measurements and Spacecraft Charging

A key parameter in modeling differential spacecraft charging is the resistivity of insulating materials. This determines how charge will accumulate and redistribute across the spacecraft, as well as the time scale for charge transport and dissipation. Existing spacecraft charging guidelines recommend use of tests and imported resistivity data from handbooks that are based principally upon ASTM methods that are more applicable to classical ground conditions and designed for problems associated with power loss through the dielectric, than for how long charge can be stored on an insulator. These data have been found to underestimate charging effects by one to four orders of magnitude for spacecraft charging applications. A review is presented of methods to measure the resistive of highly insulating materials, including the electrometer-resistance method, the electrometer-constant voltage method, the voltage rate-of-change method and the charge storage method. This is based on joint experimental studies conducted at NASA Jet Propulsion Laboratory and Utah State University to investigate the charge storage method and its relation to spacecraft charging. The different methods are found to be appropriate for different resistivity ranges and for different charging circumstances. A simple physics-based model of these methods allows separation of the polarization current and dark current components from long duration measurements of resistivity over day- to month-long time scales. Model parameters are directly related to the magnitude of charge transfer and storage and the rate of charge transport. The model largely explains the observed differences in resistivity found using the different methods and provides a framework for recommendations for the appropriate test method for spacecraft materials with different resistivities and applications. The proposed changes to the existing engineering guidelines are intended to provide design engineers more appropriate methods for consideration and measurements of resistivity for many typical spacecraft charging scenarios.

Dennison, J. R.↗
NASA NTRS2022

Design Optimization of Energized Composite Using Simulation and Experimental Methods

As electric vehicles (EVs) are evolving, innovative technologies like “energized composite” that can store energy in the car's body helps extend its range per charge. The composite's unique ability to function as both structural body panel and charge storage medium stems from its unique pattern design between “electrochemical areas (EcA)” and “epoxy area (EpA)”. Herein, a design optimization study is presented to obtain a balanced ratio between EcA versus EpA to maximize the charge storage ability of the composite while maintaining a decent tensile and bending strength. Simulations using ANSYS software and experimental confirmation using universal testing machines and electrochemical analyzers are used to derive optimum ratios between EcA and EpA. Uniaxial tension test and 3-point bend test have been performed to optimize the tensile and bend strengths, whereas cyclic voltammetry, galvanic charge–discharge, and electrochemical impedance spectroscopy are used to determine the electrochemical performance of various design configurations by modulating the ratios of EcA versus EpA. Overall, the highest achieved energy storage per lamina is 2531 mWh m−2 for a maximum of 81.6% EcA with a tensile strength of 417.73 MPa and bending strength of 263.13 MPa. This study is highly beneficial for EVs and aerospace applications.

energy storage↗