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Results for “charge stripes”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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7 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

High-resolution CCD imagers using area-array CCD's for sensing spectral components of an optical line image

CCD imagers with a novel replicated-line-imager architecture are abutted to form an extended line sensor. The sensor is preceded by optics having a slit aperture and having an optical beam splitter or astigmatic lens for projecting multiple line images through an optical color-discriminating stripe filter to the CCD imagers. A very high resolution camera suitable for use in a satellite, for example, is thus provided. The replicated-line architecture of the imager comprises an area-array CCD, successive rows of which are illuminated by replications of the same line segment, as transmitted by respective color filter stripes. The charge packets formed by accumulation of photoresponsive charge in the area-array CCD are read out row by row. Each successive row of charge packets is then converted from parallel to serial format in a CCD line register and its amplitude sensed to generate a line of output signal.

Elabd, Hammam↗
NASA NTRS1994

Mutagenic effects of heavy ion radiation in plants

Genetic and developmental effects of heavy ions in maize and rice were investigated. Heavy particles with various charges and energies were accelerated at the BEVALAC. The frequency of occurrence of white-yellow stripes on leaves of plants developed from irradiated maize seeds increased linearly with dose, and high Linear Energy Transfer (LET) heavy charged particles, e.g., neon, argon, and iron, were 2-12 times as effective as gamma rays in inducing this type of mutation. The effectiveness of high-LET heavy ion in (1) inhibiting rice seedling growth, (2) reducing plant fertility, (3) inducing chromosome aberration and micronuclei in root tip cells and pollen mother cells of the first generation plants developed from exposed seeds, and (4) inducing mutation in the second generation, were greater than that of low-LET gamma rays. All effects observed were dose-dependent; however, there appeared to be an optimal range of doses for inducing certain types of mutation, for example, for argon ions (400 MeV/u) at 90-100 Gy, several valuable mutant lines with favorable characters, such as semidwarf, early maturity and high yield ability, were obtained. Experimental results suggest that the potential application of heavy ions in crop improvement is promising. Restriction-fragment-length-polymorphism (RFLP) analysis of two semidwarf mutants induced by argon particles revealed that large DNA alterations might be involved in these mutants.

Mei, M.↗
NASA NTRS1982

Stripe filters on multispectral linear arrays

Dielectric interference filters deposited directly on top of existing 200 element charge coupled device linear imaging arrays were designed, fabricated and evaluated. The optical performance of the filters was verified with regard to crosstalk between adjacent detector elements. The filters showed an average in-band transmittance greater than 80% and a total out of band transmittance of less than 5%. Filter stability was adequate for operation in a space environment. The filter elements were definable in 12 to 25 micron element size compatible with existing silicon detectors. These type of measurement were made: (1) spectral transmission of the filter as deposited on witness plates; (2) spectral response of the silicon sensing device; (3) any optical interaction between filter and sensing device; (4) the response of the filter/sensor combination; and (5) repeatability and uniformity of filter characteristics. Detailed discussion of these evaluations are given.

Hall, J. H.↗
NASA NTRS1978

Induced junction solar cell and method of fabrication

An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n+ stripes and thermally growing a thin SiO2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized.

Maserjian, J.↗
NASA NTRS1995

Electron acceleration to high energies at quasi-parallel shock waves in the solar corona

In the solar corona shock waves are generated by flares and/or coronal mass ejections. They manifest themselves in solar type 2 radio bursts appearing as emission stripes with a slow drift from high to low frequencies in dynamic radio spectra. Their nonthermal radio emission indicates that electrons are accelerated to suprathermal and/or relativistic velocities at these shocks. As well known by extraterrestrial in-situ measurements supercritical, quasi-parallel, collisionless shocks are accompanied by so-called SLAMS (short large amplitude magnetic field structures). These SLAMS can act as strong magnetic mirrors, at which charged particles can be reflected and accelerated. Thus, thermal electrons gain energy due to multiple reflections between two SLAMS and reach suprathermal and relativistic velocities. This mechanism of accelerating electrons is discussed for circumstances in the solar corona and may be responsible for the so-called 'herringbones' observed in solar type 2 radio bursts.

Mann, G.↗
NASA NTRS1996

An Acoustic Charge Transport Imager for High Definition Television Applications: Low-Voltage SAW Amplifiers on Multilayer GaAs/ZnO Substrates

This thesis addresses the acoustoelectric issues concerning the amplification of surface acoustic waves (SAWs) and the reflection of SAWs from slanted reflector gratings on GaAs, with application to a novel acoustic charge transport (ACT) device architecture. First a simple model of the SAWAMP was developed, which was subsequently used to define the epitaxially grown material structure necessary to provide simultaneously high resistance and high electron mobility. In addition, a segmented SAWAMP structure was explored with line widths on the order of an acoustic wavelength. This resulted in the demonstration of SAWAMPS with an order of magnitude less voltage and power requirements than previously reported devices. A two-dimensional model was developed to explain the performance of devices with charge confinement layers less then 0.5 mm, which was experimentally verified. This model was extended to predict a greatly increased gain from the addition of a ZnO overlay. These overlays were experimentally attempted, but no working devices were reported due to process incompatibilities. In addition to the SAWAMP research, the reflection of SAWs from slanted gratings on GaAs was also studied and experimentally determined reflection coefficients for both 45 deg grooves and Al stripes on GaAs have been reported for the first time. The SAWAMp and reflector gratings were combined to investigate the integrated ring oscillator for application to the proposed ACT device and design parameters for this device have been provided.

Hunt, W. D.↗
NASA NTRS2006

FETs Based on Doped Polyaniline/Polyethylene Oxide Fibers

A family of experimental highly miniaturized field-effect transistors (FETs) is based on exploitation of the electrical properties of nanofibers of polyaniline/ polyethylene oxide (PANi/PEO) doped with camphorsulfonic acid. These polymer-based FETs have the potential for becoming building blocks of relatively inexpensive, low-voltage, highspeed logic circuits that could supplant complementary metal oxide/semiconductor (CMOS) logic circuits. The development of these polymerbased FETs offers advantages over the competing development of FETs based on carbon nanotubes. Whereas it is difficult to control the molecular structures and, hence, the electrical properties of carbon nanotubes, it is easy to tailor the electrical properties of these polymerbased FETs, throughout the range from insulating through semiconducting to metallic, through choices of doping levels and chemical manipulation of polymer side chains. A further advantage of doped PANi/PEO nanofibers is that they can be made to draw very small currents and operate at low voltage levels, and thus are promising for applications in which there are requirements to use many FETs to obtain large computational capabilities while minimizing power demands. Fabrication of an experimental FET in this family begins with the preparation of a substrate as follows: A layer of silicon dioxide between 50 and 200 nm thick is deposited on a highly doped (resistivity 0.01 W.cm) silicon substrate, then gold electrodes/contact stripes are deposited on the oxide. Next, one or more fibers of camphorsulphonic acid-doped PANi/PEO having diameters of the order of 100 nm are electrospun onto the substrate so as to span the gap between the gold electrodes (see Figure 1). Figure 2 depicts measured current-versus-voltage characteristics of the device of Figure 1, showing that saturation channel currents occur at source-todrain potentials that are surprisingly low, relative to those of CMOS FETs. The hole mobility in the depletion regime in this transistor was found to be 1.4 10(exp -4) sq cm/(V.s), while the one-dimensional charge density at zero gate bias was estimated to be approximately one hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx. 10(exp -3) S/cm). Reducing or eliminating the PEO content of the fibers is expected to enhance the properties of future versions of this transistor.

Theofylaktos, Noulie↗